RPR1900-800
Abstract: Electro Technik
Text: POWER FLANGE RESISTORS ELECTRO TECHNIK PERFORMANCE SPECIFICATIONS: 1.100 27.94 .250 (6.35) max. .800 (20.32) .125 (3.18) Part Number: RPR1100-400 Frequency: DC-.75GHz .500 (12.70) .125 (3.18) min. .003 (.076) .250 (6.35) .170 dia. (4.31) .170 (4.31) 400 Watts (5KW Peak)
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RPR1100-400
75GHz
RPR1900-800
50GHz
Electro Technik
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Turn-Key
Abstract: Adapters Sockets Product Presentations Giga-snaP™ BGA SMT Adapters Receptacles Prototyping Adapters Surface Mount Package Emulation Probing and Analysis Adapters BGA Sockets
Text: RoHS ISO w i t h 900 d 08 20 i g n : 1 es Certified Table of Contents Introduction . . . . . . . . . . . . . . . . . . . . . . . 2 Catalog 26 Receptacles . . . . . . . . . . . . . . . . . . . . . 22 Package Conversion For Production Applications . . . . 24-25
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75GHz
50-80grams
Turn-Key
Adapters
Sockets
Product Presentations
Giga-snaP™ BGA SMT Adapters
Receptacles
Prototyping Adapters
Surface Mount Package Emulation
Probing and Analysis Adapters
BGA Sockets
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TSEV83102G0GL
Abstract: 10 GSPS ADC JTS83102G0 TS81102G0 TS83102G0 TS83102G0CGL
Text: Released under NDA TS83102G0 MAIN FEATURES ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! 10-bit resolution. 2 GSPS sampling rate. 3 GHz full power input bandwidth. Band flatness: ± 0.2 dB from DC up to 1.5 GHz . Very low input VSWR : 1.15 max from DC to 2GHz (packaged device).
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TS83102G0
10-bit
750MHz
52dBc
TS81102G0
TS83102G0
TSEV83102G0GL
75GHz
TSEV83102G0GL
10 GSPS ADC
JTS83102G0
TS81102G0
TS83102G0CGL
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Untitled
Abstract: No abstract text available
Text: GaAs & GaN Build your own solution with UMS FOUNDRY SERVICES UMS has developed a proven family of III-V based processes for high performance low noise and high power MMICs. These processes are extensively used by foundry customers and by UMS to offer MMIC solutions for the Defence,
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TS16949.
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TB-186
Abstract: Mini-Circuits tb-186
Text: AMPLIFIERS Designer's Kit K2-MNA MINI-CIRCUITS DESIGNER'S KITS THE SOLUTION ! ENLARGED VIEW TOP VIEW EXPOSED METAL BOTTOM 0.5 to 5.9 GHz MNA Features Wideband, 50Ω • 3V & 5V operation • High directivity • Low noise figure • Output power up to +19 dBm typ.
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TB-186
75GHz,
M109660
TB-186
Mini-Circuits tb-186
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max7660
Abstract: TB-186
Text: AMPLIFIERS Designer's Kit K1-MNA MINI-CIRCUITS DESIGNER'S KITS THE SOLUTION ! ENLARGED VIEW TOP VIEW EXPOSED METAL BOTTOM 0.5 to 2.5 GHz MNA Features MCLP TM Mini-Circuits Leadless Package • Miniature plastic case Wideband, 50Ω • 3V & 5V operation
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TB-186
75GHz.
M109660
max7660
TB-186
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M106001
Abstract: MNA-6
Text: AMPLIFIERS Designer's Kit K2-MNA MINI-CIRCUITS DESIGNER'S KITS THE SOLUTION ! ENLARGED VIEW TOP VIEW EXPOSED METAL BOTTOM 0.5 to 5.9GHz MNA Features Wideband, 50Ω • 3V & 5V operation • High directivity • Low noise figure • Output power up to +19dBm typ.
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19dBm
75GHz,
M106001
M106001
MNA-6
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Nonlinear Effects In Oscillators and Synthesizers
Abstract: 50MHz Colpitts FUJITSU MICROWAVE TRANSISTOR 2058d yig tuned oscillator digital phase shift DC 6GHz fujitsu X-band amplifier rohde MARCONI abstract of Colpitts oscillator
Text: Nonlinear Effects In Oscillators and Synthesizers Invited Ulrich L. Rohde Chairman, Synergy Microwave Corporation, Paterson, New Jersey ulr@synergymwave.com Abstract - The proposed paper shows existing problems in VCO’s and synthesizers due to the nonlinearities in the active devices and external integrated circuits. This paper proposes a design
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Untitled
Abstract: No abstract text available
Text: AMPLIFIERS Designer's Kit K1-MNA MINI-CIRCUITS DESIGNER'S KITS THE SOLUTION ! ENLARGED VIEW EXPOSED METAL BOTTOM TOP VIEW 0.5 to 2.5GHz MNA Features MCLP TM Mini-Circuits Leadless Package • Miniature plastic case Wideband, 50Ω • 3V & 5V operation
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18dBm
75GHz.
M106000
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N1999A
Abstract: No abstract text available
Text: Measurement Considerations for Generating and Analyzing MillimeterWave Signals Application Note In applications that require high-speed, short-range connections, interest is growing in the use of signals that operate at millimeter-wave frequencies. Examples include satellite-to-satellite
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si800
BP-01-15-14)
5991-3968EN
N1999A
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Untitled
Abstract: No abstract text available
Text: POWER FLANGE RESISTORS ALUMINUM NITRIDE PERFORMANCE SPECIFICATIONS .220 [5.59]— MAX .110 t2.79] [.076] KilL .171 [4.34] .125 DIA. [3.17] Part Number: RPR975N250A Frequency: DC 1.0 GHz Capacitance: 2.2 pF - 250 WATTS 4KW PEAK PERFORMANCE SPECIFICATIONS
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RPR975N250A
100N400
75GHz
RPR1900N800
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sharp LNB ku band
Abstract: BSCS87M20 LNB ku band
Text: PREPARED BY DATE SHARP t tizy ““ v CHECKED BY: DATE 08 MAY 1996 ELECTRONIC COMPONENTS GROUP SHARP CORPORATION u, L-5, APPROVED BY: DATE 08 MAY 1996 SPECIFICATION fl, dw SPEC NO. EC-96501 FILE NO. ISSUE 08 MAY 1996 PAGE 7 REPRESENTATIVE DIVISION ❑ ELECTRONIC COMPONENTS DIV.
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EC-96501
BSCS87N120
BSCS87M20
I-N13-CCS-12
75GHz
630X460X220
40PCS.
sharp LNB ku band
BSCS87M20
LNB ku band
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VPP24K1HD
Abstract: VPP24K1SD VPP24K3HD
Text: JACK PANELS VPP VIDEO PATCHBAV SERIES ÜiSIÜ FAX: 773 792-2129 -, J . ä 193 VPP VIDEO PATCHBAY SERIES VPP24K3HD75T VJHD*75TX 0 M Ém m The VPP Series video patchbays offer a wide variety of options for video patching. The HD Series meets SMPTE 292M specifications for high definition video signaling,
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VPP24K3HD75T
75GHZ.
75GHz
VPP24K1HD
VPP24K1SD
VPP24K3HD
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Untitled
Abstract: No abstract text available
Text: • fl235b05 Q O T O b i 4 213 ■ SIEMENS CGY181 GaAsMMIC Preliminary Datasheet * Power amplifier for PCN/PCS applications * Fully integrated 2 stage amplifier •Operating voltage range: 2.7 to 6 V •Overall power added efficiency 35 % * Input matched to 50 i2, simple output match
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fl235b05
CGY181
Q68000-A8883
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FET low noise
Abstract: DC bias of gaas FET FA12202
Text: ~T1 MITSUBISHI -[DISCRETE SC3- DE Jt.SMTñE'i D O l D l b ñ M IT S U B IS H I SE M IC O N D U C T O R <GaAs FET> FA12202 6249829 MITSUBISHI D I S C R E T E SC> 910 10168 D T -3 l~ 3 5 ' GaAs FET LOW NOISE AMPLIFIER MODULE D E S C R IP T IO N O U T L IN E D R A W IN G
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FA12202
FET low noise
DC bias of gaas FET
FA12202
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Untitled
Abstract: No abstract text available
Text: SIEMENS CG Y 184 GaAs MMIC Preliminary Data • • • • • • Power amplifier for PCN applications 2.5 W 34dBm output power at 3.5 V Overall power added efficiency 43 % Fully integrated 4 stage amplifier Power ramp control Input matched to 50 ohms, simple output match
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34dBm)
Q62702G62
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