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    801R2AN

    Abstract: SML801R2AN SML751R2AN NC160 22G diode SML751R4AN SML801R4AN 801R4AN
    Text: SEMELÂB PLC bOE D fll331û? OGOG77fl 22G ISMLB MOS POWER à IN I SML801R2AN 751R2AN SML801R4AN SML751R4AN SEME LAB 800V 750V 800V 750V 8.0A 8.0A 7.5A 7.5A 1.20Q 1.2011 1.40Q 1.40Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS


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    PDF OGOG77fl SML801R2AN SML751R2AN SML801R4AN SML751R4AN 751R2 801R2AN 751R4AN 801R4AN TQ-204AA) NC160 22G diode 801R4AN

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    Abstract: No abstract text available
    Text: ADVANCED P OWE R TECHNOLOGY 41E D • 0 5 5 7 1 0 1 OOOQMflfi 35fl « A V P ■ R A d va n ced r J PO W ER T JviS Te c h n o lo g y APT801R2AN 751R2AN APT801R4AN APT751R4AN POWER MOS IV 800V 750V 800V 750V 8.0A 8.0A 7.5A 7.5A 1.20 a 1.20 i2 1.40 ß 1.40 £2


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    PDF APT801R2AN APT751R2AN APT801R4AN APT751R4AN 751R2AN 801R2AN 751R4AN 801R4AN APT801R2/751R2/801R4/751R4AN 100mS

    APT801R2AN

    Abstract: 801R4AN 801R2AN APT751R2AN APT751R4AN APT801R4AN 801r2
    Text: ADVANCED POWER TECHNOLOGY M ^E DESTEDT D OOOOMfl fl 35Ô • AVP A d va n c e d P o w er t j i - i s Te c h n o lo g y POWER MOS IV APT801R2AN 751R2AN APT801R4AN APT751R4AN 800V 750V 800V 750V 8.0A 8.0A 7.5A 7.5A 1.20 1.20 1.40 1.40 £2 Í2 £2 Í2 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


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    PDF APT801R2AN APT751R2AN APT801R4AN APT751R4AN 751R2AN 801R2AN 751R4AN 801R4AN T0-204AA) 801R4AN 801r2