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    750N10ND

    Abstract: JESD22 BSC750N10ND
    Text: 750N10ND G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V R DS on ,max 75 mΩ ID 13 A • Ideal for high-frequency switching and synchronous rectification PG-TDSON-8 • Dual N-channel, normal level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF BSC750N10ND 750N10ND 750N10ND JESD22

    750N10ND

    Abstract: BSC750N10ND
    Text: 750N10ND G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V R DS on ,max 75 mΩ ID 13 A • Ideal for high-frequency switching and synchronous rectification PG-TDSON-8 • Dual N-channel, normal level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF BSC750N10ND 750N10ND 750N10ND

    750N10ND

    Abstract: JESD22 IE61249-2-21
    Text: 750N10ND G OptiMOS 2 Power-Transistor Product Summary Features • Dual N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 75 mΩ ID 13 A • Low on-resistance R DS(on) • Pb-free lead plating; RoHS compliant


    Original     		PDF BSC750N10ND IE61249-2-21 750N10ND 750N10ND JESD22 IE61249-2-21