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    74S289 RAM Search Results

    74S289 RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    6167LA100DB Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation
    6167LA70DB Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation
    6167SA55DB Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation
    8413204YA Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation
    8413205YA Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation

    74S289 RAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MB7052

    Abstract: MB7051 MB7122 27s49 MB7057 27S19 27s13 PROM intel 3601 MB7058 MB7053
    Text: TTL/Bipolar PROM / RAM Reference Guide V2.f3 TS = Tri-State output OC = Open Collector output Hacked, copied, edited and extended by W.G. to give it a decent shape and handy booklet form The main part is extracted from


    Original     		PDF --uPB410 ------MB7051 uPB400 MB7056 ----P3106 27S01 P3107 82S16 82S116 82S06 MB7052 MB7051 MB7122 27s49 MB7057 27S19 27s13 PROM intel 3601 MB7058 MB7053

    Untitled

    Abstract: No abstract text available
    Text: 289 CONNECTION DIAGRAM PINOUT A 54S/74S289 b i 1 5 4 L S /7 4 L S 2 8 9 C u <7 ao[T T i l vcc 64-BIT RANDOM ACCESS MEMORY «D E Tsl Ai With O pen-Collector Outputs WE [ T 14] A 2 Di [7 13] A 3 0 ,[T T2ID 4 D2 [ ? T T lo a Ö2 U Tö] D 3 D ESC R IPTIO N — The '289 is a high speed 64-bit RAM organized as a 16word by 4-b it array. Address inputs are buffered to minim ize loading, and


    OCR Scan     		PDF 54S/74S289 64-BIT 16word 54/74S 54/74LS

    74LS289

    Abstract: 74S289PC 54LS289DM 54S289DM 74LS289DC 74LS289FC 74LS289PC 74S289DC 74S289FC S289T
    Text: 289 b 11 54S/74S289 54LS /74LS 289 <T' C O N N E C T IO N D IA G R A M P IN O U T A U <7 ao[T 64-BIT RANDOM ACCESS MEMORY Til vcc Tsl Ai csGE 771 A2 771 a 3 T2ID4 [7 [7 5, [I 02 [][ 52|T W ith O p e n -C o lle c to r O utputs we Oi D E S C R IP T IO N — T he ’289 is a h igh speed 6 4 -b it RAM o rg a n ize d as a 16w o rd by 4 -b it array. A d d re ss in p u ts are b u ffe re d to m in im ize lo a d in g , and


    OCR Scan     		PDF 54S/74S289 54LS/74LS289 64-BIT 16-word 54/74S 54/74LS 74LS289 74S289PC 54LS289DM 54S289DM 74LS289DC 74LS289FC 74LS289PC 74S289DC 74S289FC S289T

    N82S131

    Abstract: N82S141 n82s123 MCM10149 MCM7620 MCM7621 MCM7641C MCM7643C MCM7681C N82HS137
    Text: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR MEMORY CROSS REFERENCE BIPOLAR M EM O RY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIG NETICS T.l. SIG NETICS *10149 N82S130 N82S131


    OCR Scan     		PDF MCM10149 MCM7620 N82S130 MCM7621 N82S131 MCM7643C N82S137 N82HS137 MCM7641C N82S141 N82S131 N82S141 n82s123 MCM10149 MCM7681C N82HS137

    74s* programming

    Abstract: N82S16 prom 256x4 bit MCM10149 MCM7620 MCM7621 MCM7641C MCM7643C MCM7681C N82HS137
    Text: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR M EM ORY CROSS REFERENCE BIPOLAR M EM O RY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIGNETICS T.l. SIGNETICS *10149 N82S130 N82S131


    OCR Scan     		PDF MCM10149 MCM7620 N82S130 MCM7621 N82S131 MCM7643C N82S137 N82HS137 MCM7641C N82S141 74s* programming N82S16 prom 256x4 bit MCM10149 MCM7681C N82HS137

    74s289 ram

    Abstract: No abstract text available
    Text: Am27S02/27S03 64-Bit Inverting-Output Bipolar RAM DISTINCTIVE CHARACTERISTICS Fully decoded 16 word x 4-bit low-power Schottky RAMS Ultra-Fast "A " Version: Address access time 25ns Internal ECL circuitry for optimum speed/power perfor­ mance over voltage and temperature


    OCR Scan     		PDF Am27S02/27S03 64-Bit Am27S02/02A Am27S03/03A 74S289, Am27S02A/02 74S189, Am27S03A/03 74s289 ram

    2AM27

    Abstract: 27S02 amd am2 pin diagram am2 power CIRCUIT diagram
    Text: Page 0001 11/23/88 15:06:24 Tx: AM27S02 TED • Ft: AMD FMT twforiwtfcm S < r v ie> fc Inc. Am27S02/Am27S03 64-Sit Inverting-Output Bipolar RAM > a DISTINCTIVE CHARACTERISTICS Fully 16 w ord x 4-b it low -pow er S chottky RAMS Ultra-Fast Version; Address access time 25 ns


    OCR Scan     		PDF AM27S02 Am27S02/Am27S03 64-Sit Am27S03 74S289, 74S189, 2AM27 27S02 amd am2 pin diagram am2 power CIRCUIT diagram

    27S03

    Abstract: No abstract text available
    Text: Am27S02/27S03 64-Bit Inverting-Output Bipolar RAM • • • Fully decoded 16 word x 4-bit low-power Schottky RAMS Ultra-Fast " A " Version: Address access time 25ns Internal E C l circuitry for optimum speed/power perfor­ mance over voltage and temperature


    OCR Scan     		PDF Am27S02/27S03 64-Bit Am27S02/02A Am27S03/03A 74S289, Am27S02A/02 74S189, Am27S03A/03 27S03

    AM27S03

    Abstract: A35CS AM27S02 20D3 74S189 74S289 fmuml
    Text: Page 0001 11/23/88 15:06:24 Tx: AM27S02 TED • Ft: AMD FMT twforiwtfcm S< rv ie> fc Inc. Am 27S02/Am 27S03 64-Sit Inverting-Output Bipolar RAM > a DISTINCTIVE CH A R A C T E R IST IC S Fully 16 word x 4-bit low-power Schottky RAM S Ultra-Fast Version; Address access time 25 ns


    OCR Scan     		PDF AM27S02 Am27S02/Am27S03 64-Bit Am27S03 74S289, 74S189, A35CS 20D3 74S189 74S289 fmuml

    74S189

    Abstract: 74S289 AM27S02 AM27S02PC CD000831 27S03
    Text: A m 2 7 S 0 2 /2 7 S 0 3 64-Bit Inverting-Output Bipolar RAM • • Fully decoded 16 word x 4-bit low-power Schottky RAMS Ultra-Fast "A " Version: Address access time 25ns Internal ECL circuitry for optimum speed/power perfor­ mance over voltage and temperature


    OCR Scan     		PDF Am27S02/27S03 64-Bit Am27S02/02A Am27S03/03A 74S289, Am27S02A/02 74S189, Am27S03A/03 74S189 74S289 AM27S02 AM27S02PC CD000831 27S03

    74s288

    Abstract: SIGNETICS 74S188 74S188 74S287 74S474 mmi 6331 74S387 signetics 82s23 H6555 MMI 6349
    Text: S ig n e tic s Memories BIPOLAR M EMORY CROSS R E F E R E N C E AMD' 2700/27 LSOO 2701/27LSÛ 1 27S08/27LS08 27S09/27LS09 27S10 27S11 3101 310 1 A/27S02 93415 93415A 93425 93425A F A IR C H IL D 10149 10144 1 0410 10415 93403 93406 93411 93411A 93415 93415A


    OCR Scan     		PDF 82S16 2701/27LS01 82S17 27S08/27LS0Ã 82S23 27S09/27LS09 82S123 27S10 82S126 27S11 74s288 SIGNETICS 74S188 74S188 74S287 74S474 mmi 6331 74S387 signetics 82s23 H6555 MMI 6349

    74S189

    Abstract: 74S289 AM27S02
    Text: Page 0001 11/23/88 15:06:24 Tx: AM27S02 TED • Ft: AMD FMT twforiwtfcm S< rv ie> fc Inc. Am 27S02/Am 27S03 64-Sit Inverting-Output Bipolar RAM > a DISTINCTIVE CHARACTERISTICS Fully 16 w ord x 4-b it low -pow er S chottky RAMS Ultra-Fast Version; Address access time 25 ns


    OCR Scan     		PDF AM27S02 Am27S02/Am27S03 64-Bit Am27S03 74S289, 74S189, 74S189 74S289

    AM27S03

    Abstract: No abstract text available
    Text: ADV MICRO {MEMORY} 0257528 0ES7S5ä D05SSti3 Q T|~ ADV M ICRO MEMORY 89D 25563 D ^ T -4 6 -2 3 -0 8 Am27S02/Am27S03 P 64-Bit Inverting-Output Bipolar RAM DISTINCTIVE CHARACTERISTICS • • • Fully decoded 16 word x 4-bit low-power Schottky RAMS Ultra-Fast Version: Address access time 15 ns


    OCR Scan     		PDF D05SSti3 Am27S02/Am27S03 64-Bit Am27S02 Am27S03 74S289, 74S189,

    IC 74187

    Abstract: lt 6246 MMI 6330 74s188 ic 74s201 6301-1 prom HARRIS 8249 mmi 6331 82S2708 74S288
    Text: Siginetics Integrated Circuits Schottky T T L Schottky T T L 74S Series Cont. TYPE NO. N74S260N N74S280AN N74S287N N74S288N N74S289N DE SC R IPTIO N Dual 5 -ln p u t N O R Gate 9 -B it O dd/E ven P arity G enerator/Checker . 102 4-B it Prom -3 State? o /p


    OCR Scan     		PDF N74S260N 55616D N74S280AN S5617B N74S287N 1024-Bit 55618X N74S288N 256-Bit 55619R IC 74187 lt 6246 MMI 6330 74s188 ic 74s201 6301-1 prom HARRIS 8249 mmi 6331 82S2708 74S288

    MH 74141

    Abstract: Tesla katalog MH74S04 MH74188 information applikation MH74S287 mikroelektronik RFT CDB404E ucy 74132 MZH 115
    Text: m o N r ^ e le l- c fe n a n il- c Information Applikation ._ B|B Information Applikation Heft 26: IMPORT-IS Teil 2 i ' . • fbkj veb Halbleiterwerk frankfurt/oder Ü B d batriab im vab ko m binat mfcr m M ftrnnllt DER TECHNIK I Bezirksvorstand Frankfurt/O.


    OCR Scan     		PDF

    MH1SS1

    Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
    Text: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik


    OCR Scan     		PDF

    MSD 7818

    Abstract: MN9106 information applikation 7490 N TDA 5700 information applikation mikroelektronik udssr hefte 143KT1 Mikroelektronik Information Applikation K 176 LE, K 561 LN
    Text: In n in ik ü r Q fâ lI Information Applikation RGW Typen­ übersicht + Vergleich TeiM UdSSR JitfÆÊL JUUUUUUL&JJJUL i m i n i ^ r ^ c z l c i c b p o n Information Applikation , 9 H E F T 4 9 * R G W T y p e n ü b e r s i c h t + V e r g l e i c h Teil 1


    OCR Scan     		PDF 6250b MSD 7818 MN9106 information applikation 7490 N TDA 5700 information applikation mikroelektronik udssr hefte 143KT1 Mikroelektronik Information Applikation K 176 LE, K 561 LN

    MM4220DF/MM5220DF

    Abstract: mm5221 MM4240 DS8807 MM5017 54S287 MM1402a equivalent transistor bf 175 MM74C920 MM5061
    Text: Edge Index by Product Family NATIONAL This is National's first Memory handbook containing information on MOS and Bipolar Memory Components, Systems, Application Notes and Support Circuits. For detailed information on Interface Circuits and other major product lines, contact a National sales office, representative, or distributor.


    OCR Scan     		PDF 360746lat MM4220DF/MM5220DF mm5221 MM4240 DS8807 MM5017 54S287 MM1402a equivalent transistor bf 175 MM74C920 MM5061

    74LS189 equivalent

    Abstract: 74LS200 AmZ8036 Z8104 74LS300 AM9511 Am2505 27s13 54S244 27LS00
    Text: Advanced Micro Devices Condensed Catalog 1981 Advanced Micro Devices, Inc. Advanced Micro Devices reserves the right to make changes in its products without notice in order to improve design or performance characteristics. The company assumes no responsibility for the use of any circuits described herein.


    OCR Scan     		PDF AMD-599 LM101 SN54LS01 132nd 74LS189 equivalent 74LS200 AmZ8036 Z8104 74LS300 AM9511 Am2505 27s13 54S244 27LS00

    54S38

    Abstract: SN74298 SN74265 54175 NES 1004 naval specification 74L95 Transistor AF 138 07802-1 SN7437 SN54LS195A
    Text: m - G EN ER A L IN F O R M A TIO N INDEXES Numerical • Functional/Selection Guide O R D E R IN G INSTRUCTIO NS A N D M E C H A N IC A L D ATA 1 1 5 4/74 F A M IL Y SSI C IR CU ITS 2 I 54/74 F A M IL Y M S I/LSI C IR C U ITS 3 S E R IE S 29000 S S I C IR C U IT S


    OCR Scan     		PDF 38510/M D012510 D011520 D011510 54S38 SN74298 SN74265 54175 NES 1004 naval specification 74L95 Transistor AF 138 07802-1 SN7437 SN54LS195A

    74ls314

    Abstract: SN75450BN RM741DC 74LS208 MC1711G 74s214 SN75361AP 74LS207 RS 75491 MC1741L
    Text: PRODUCT RANGE PAGE M IC R O P R O C E S S O R S 2-21 M E M O R IE S MOS M IC R O P R O C E S S O R S & S U P P O R T C IR C U IT S 2 2 -2 7 28 2 9 -3 0 DTL TTL L IN E A R IN T E R F A C E C IR C U IT S 5 5 / 7 5 S e rie s C o n tr o l C ir c u its C ro s s -R e fe re n c e G u id e


    OCR Scan     		PDF

    dm8130

    Abstract: 54175 DM74367 KS 2102 7486 ic truth table signetics 2502 ci 8602 gn block diagram ci 8602 gn 74s281 DM74LS76
    Text: 19 7 6 N atio n al S e m ico n d u cto r C o rp . p 1 ? I m • ' % TTL Data Book D EV IC E MIL i 2502 2503 2504 5400 54H00 54L00 54LS00 5401 54H01 54L01 54LS01 5402 54L02 54LS02 5403 54L03 54LS03 5404 54H04 54L04 54LS04 5405 54H05 54L05 54LS05 5406 5407 5408


    OCR Scan     		PDF 54H00 54L00 54LS00 54H01 54L01 54LS01 54L02 54LS02 54L03 54LS03 dm8130 54175 DM74367 KS 2102 7486 ic truth table signetics 2502 ci 8602 gn block diagram ci 8602 gn 74s281 DM74LS76

    WIMA TFM

    Abstract: Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A
    Text: TENTH EDITION ELECTRONIC COMPONENTS CATALOGUE FAIRCHILD FERRANTI WAYCOM comway BECKMAN SPRAGUE ASTRALUX REDPOINT GREENPAR electronics limited MOLEX MARKET STREET BRACKNELL BERKS RG121JU RADIATRON TEL: SALES, BRACKNELL 0344 24765 TELEX:847201 ERG HELLERMANN


    OCR Scan     		PDF RG121JU WIMA TFM Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A

    DM74367

    Abstract: 54175 71ls97 DM74109 DM8160 om541 ci 8602 gn block diagram 5401 DM transistor 74L10 74S136
    Text: N ational Semiconductor Section 1 - 54/74 SSI DEVICES Connection Diagram s • Electrical Tables Section 2 - 54/74 M SI DEVICES Section 3 - National Semiconductor PROPRIETARY DEVICES Section 4 - National Semiconductor ADDITIONAL D EV KES t o NATIONAL Manufactured under one or more of the fo llowing U.S. patents: 3083262, 3189758, 3231797 , 3303356, 3317671, 3323071, 3381071, 3408542, 3421025, 3426423, 3440498, 3518750, 3519897, 3557431, 3560765,


    OCR Scan     		PDF