C1847
Abstract: No abstract text available
Text: I HIGH-PERFORMANCE AIGaAs PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 1 I I MCT5210 MCT5211 PACKAGE DIMENSIONS DESCRIPTION The MCT-521X are high performance CMOS/LSTTL logic compatible phototransistor type optically coupled isolator products. They are constructed using a very low
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MCT5210
MCT5211
MCT-521X
MCT-5211
C1850
C1852
74LiLifl51
C1847
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Untitled
Abstract: No abstract text available
Text: TAPERED PACKAGE T-13/. SOLID STATE LAMPS OPTOELECTRONICS STANDARD RED MV502XA PACKAGE DIMENSIONS DESCRIPTION The MV502X Series of solid state indicators is made with gallium arsenide phosphide light emitting diodes. Encapsulation and lens is epoxy. Various lens effects are
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MV502XA
MV502X
MV5021A
MV5022A
MV5023A
MV5024A
MV5025A
MV5026A
C654A
10QuS
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CNY17G-3
Abstract: CNY17G3
Text: Philips Semiconductors Product specification High-voltage optocouplers CNY17G/CNY17GF QUALITY TECHNOLOGIES CORP TMbböSl OOOMbEE M m S7E D IflTY FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with
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CNY17G/CNY17GF
E90700
BS415
BS7002
OT212.
74bbflSl
0DD4fl03
MSA048-2
CNY17G-3
CNY17G3
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Untitled
Abstract: No abstract text available
Text: 4N29 4N30 4N31 ÛUALITY TECHNOLOGIES CORP S7E ]> 4N32 4N33 T m4 • Ö TY s a OPTOCOUPLER Opto-isolator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in-line DIL envelope.
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E90700
0110B
AC/450
57804/VDE
86/HD
195S4
74bbfl51
OT212.
74bbflSl
0DD4fl03
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Untitled
Abstract: No abstract text available
Text: Philips Sem iconductors Product specification High voltage optocouplers flUALITY T E C H N O L O G I E S CORP SL5582W/SL5583W S7E D • 7 4 b b A5 1 0 D O 4 74 1 EflH ■ f l T Y FEATURES • A wide body encapsulation with a pin distance of 10.16 mm • An external clearance of 9.6 mm
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SL5582W/SL5583W
SL5582W
SL5583W
OT212.
74bbflSl
0DD4fl03
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Transistor 3TY
Abstract: No abstract text available
Text: I I ÛU AL ITY T E C H N O L O G I E S CORP S7E D • 7 4 b b ô 5 1 0 G G4 41 7 212 « f l T Y U N u a t» CNG36 GaAIAs OPTOCOUPLERS O ptically coupled isolators consisting o f an infrared emitting GaAIAs diode and a silicon npn phototransistor w ith accessible base in a SOT90B envelope, designed fo r low input current and long life
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CNG36
OT90B
OT212.
74bbflSl
0DD4fl03
MSA048-2
Transistor 3TY
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors _Product specification T -*i I — Wide body, high isolation, high-speed optocouplers CNW135/CNW136/CNW4502 ÛU ALI TY T E C H N O L O G I E S CORP FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm
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CNW135/CNW136/CNW4502
7Hbbfl51
CNW4502
CNW136,
E90700
OT212.
74bbflSl
0DD4fl03
MSA048-2
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Transistor 2TY
Abstract: .2ty transistor npn
Text: CNX48U Û U A L IT Y T E C H N O L O G I E S CORP 7Mhbfi51 OQO M Sb ? 72T • Û T Y S7E D OPTOCOUPLER % Opto-isolator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in line DIL envelope.
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CNX48U
7Mhbfi51
E90700
0110b
804/VDE
86/HD
74bbfl51
OT212.
74bbflSl
0DD4fl03
Transistor 2TY
.2ty transistor npn
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