Untitled
Abstract: No abstract text available
Text: CMOS Pin Electronics Product Listing January 1999 Part Number Technology Configuration Drivers 211 646 647 649 749 818 846 3µ CMOS 3µ CMOS 3µ CMOS 3µ CMOS 4µ CMOS 4µ CMOS 4µ CMOS D/D D/C/L D/C/L D/C D/C D/C D/D/C/L 2 1 1 8 8 8 1 16 2 – 1 Comparators
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XCF02S
Abstract: XCF04S XAPP544 XCV50E microblaze
Text: Application Note: XCF02S and XCF04S PROMs Using Xilinx XCF02S/XCF04S JTAG PROMs for Data Storage Applications R XAPP544 v1.1 January 11, 2008 Author: Arthur Khu, Farshid Shokouhi, Jameel Hussein, Amrish Patel Summary This application note describes a method for combining FPGA configuration data and generalpurpose user data into a Xilinx XCF02S (2 Mbit) or XCF04S (4 Mbit) configuration PROM.
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XCF02S
XCF04S
XCF02S/XCF04S
XAPP544
XCF02S
XCF04S
XAPP544
XCV50E
microblaze
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arinc 818
Abstract: parylene conformal coating arinc-818 rj2g
Text: RJ-2G-SX-DPLX-LC-R-A-x Rugged RJ Size 100Mb/s to 2.5Gb/s Fiber Optic Transceiver 749 Miner Road, Highland Heights, OH 44143 440 446-8800, sales@cotsworks.com Features RJ-2G-SX-DPLX-LC-R-A is ideal for harsh environment connectivity Absolute Maximum Ratings
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100Mb/s
IEC-825
850nm
545d25
arinc 818
parylene conformal coating
arinc-818
rj2g
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embedded system mini projects using 8051 free
Abstract: agriculture based electronics projects DB25 LPT 8086 microprocessor mini project circuit ic 8051 MEMORY CARD 128 KB BROSE mini projects using bread board and integrated MCU 80C535 BOSCH 7.4.9 MM486
Text: C o v e r i n g t h e E n t i r e S p e c t r u m o f E m b e d d e d C o n t r o l Trusted C167/ST10 Embedded Architecture now in phyCORE SBC ® design C o v e r i n g t h e E n t i r e S p e c t r u m phyCORE®-167CR/CS E m b e d d e d C o n t r o l Product Catalogue 2001
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C167/ST10
-167CR/CS
C167CR/CS
ST10F168
16-bit,
D-07973
D-55129
16-bit
32-bit
embedded system mini projects using 8051 free
agriculture based electronics projects
DB25 LPT
8086 microprocessor mini project circuit
ic 8051
MEMORY CARD 128 KB BROSE
mini projects using bread board and integrated
MCU 80C535
BOSCH 7.4.9
MM486
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Untitled
Abstract: No abstract text available
Text: Intel SM35 Express Chipset Datasheet January 2012 Revision 002 Document Number: 325308-002 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS
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CS03
Abstract: CS032
Text: SAW Bandpass Filter 202155B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2512 Pin Configuration
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202155B
D2512
04A001
NI1013-
CS03
CS032
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D2012
Abstract: No abstract text available
Text: SAW Bandpass Filter 201518B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration
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201518B
D2012
04A001
NW3019-CS02
D2012
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7473 pin diagram
Abstract: pin diagram of 7473 RF Prime X band attenuator cpi twt india cpi CPI VZU 6900K6 6900K4 VZU-6991K4
Text: 6900K4 Series 20 Watt Power Amplifier Features Description • • • • 4.0 TO 18 GHz Octave Bandwidths or Greater Optional GPIB Control One Year Warranty Unlimited Hours • Worldwide Support Centers • 24 Hour Hotline for customer support (800) 231-4818 or 1-650-846-3700
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6900K4
89/336/EEC
7473 pin diagram
pin diagram of 7473
RF Prime
X band attenuator
cpi twt
india cpi
CPI VZU
6900K6
VZU-6991K4
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FLL1500IU-2C
Abstract: imt 901 L-band 500 watt amplifier FLL1500
Text: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that
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FLL1500IU-2C
FLL1500IU-2C
12-R0
imt 901
L-band 500 watt amplifier
FLL1500
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S1365
Abstract: No abstract text available
Text: Bandpass Filter 222053B 1. Features IF bandpass filter Low-Loss Filter Single-ended operation Ceramic Surface Mount Device SMD Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device (ESD) 2. Package Dimension 13.30±0.2
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222053B
08A001
S1365
NJ8012-CS01
S1365
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FLL1500IU-2C
Abstract: eudyna GaAs FET Amplifier
Text: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that
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FLL1500IU-2C
FLL1500IU-2C
eudyna GaAs FET Amplifier
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FLL1500IU-2C
Abstract: No abstract text available
Text: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that
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FLL1500IU-2C
FLL1500IU-2C
FCSI1199M200
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Untitled
Abstract: No abstract text available
Text: I N T E G R A T E D C IR C U IT S S^EET 83C749/87C749 80C51 8-bit microcontroller family 2K/64 OTP/ROM, 5 channel 8-bit A/D, PWM, low pin count Prelim inary specification Supersedes data of 1998 Jan 06 IC20 Data Handbook Philips Semiconductors 1998 Apr 23
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83C749/87C749
80C51
2K/64
83C749/87C749
749/87C749
8XC749
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Signal Path Designer
Abstract: altera ep910i
Text: Classic EPLD Family M ay 1999 ver. ;> Features D ata S h e e t • ■ ■ ■ ■ ■ ■ ■ ■ ■ Complete device family with logic densities of 300 to 900 usable gates see Table 1 Device erasure and reprogramming with non-volatile EPROM configuration elements
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749 MOSFET TRANSISTOR motorola
Abstract: MAX749CPA
Text: 19-0143; Rev 0; 5/93 V M ^ X I V M D igitally A djustable LCD Bias Supply _ G eneral Description The MAX749 generates negative LCD-bias contrast voltages from 2V to 6V inputs. Full-scale output voltage can be scaled to -100V or greater, and is d ig ita lly
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MAX749
-100V
500kHz)
1178m
2032m
749 MOSFET TRANSISTOR motorola
MAX749CPA
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MARKING CODE Zi sot363
Abstract: WRS SOT363 Marking Code ZI ZI Marking Code transistor sot-363 marking ZI 198S Transistor WRS
Text: SIEMENS BCR 198S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit •Two galvanic internal isolated Transistors in one package ■Built in bias resistor (R1=47k£i, R2=47kQ) Type Marking Ordering Code Pin Configuration
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Q62702-C2419
OT-363
27llector-base
MARKING CODE Zi sot363
WRS SOT363
Marking Code ZI
ZI Marking Code transistor
sot-363 marking ZI
198S
Transistor WRS
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749 MOSFET TRANSISTOR motorola
Abstract: 749PC GE DC 300 ADJUSTABLE SPEED DRIVE 4151d MAX749CA MAX749EA zetex 749 MAX749CPA
Text: 19-0143; Rev 0; 5/93 V M y JX IV M D igitally A djustable LCD Bias Supply _ G eneral D escription .F eatures The MAX749 generates negative LCD-bias contrast voltages from 2V to 6V inputs. Full-scale output voltage can be scaled to -100V or greater, and is d ig ita lly
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MAX749
-100V
500kHz)
1178mm)
749 MOSFET TRANSISTOR motorola
749PC
GE DC 300 ADJUSTABLE SPEED DRIVE
4151d
MAX749CA
MAX749EA
zetex 749
MAX749CPA
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749 MOSFET TRANSISTOR motorola
Abstract: MAX749CPA
Text: 19-0143; Rev 1; 2/95 D igitally Adjustable LCD Bias Supply A unique current-limited control scheme reduces supply current and maximizes efficiency, while a high switching frequency up to 500kHz minimizes the size of external components. Quiescent current is only 60|jA max and is
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500kHz)
MAX749
DD1S347
749 MOSFET TRANSISTOR motorola
MAX749CPA
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E2E1
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification 80C51 8-bit microcontroller family 83C749/87C749 2K/64 OTP/ROM, 5 channel 8-bit A/D, PWM, low pin count DESCRIPTION FEATURES The Philips 83C749/87C749 offers many of the advantages of the 80C51 architecture in a sm all package and at low cost.
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80C51
2K/64
83C749/87C749
83C749/87C749
8XC749
83C749)
87C749)
16-bit
E2E1
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Untitled
Abstract: No abstract text available
Text: SIEMENS PROFET BTS707 Smart Two Channel Highside Power Switch Features • • • • • • • Overload protection Current limitation Short-circuit protection Thermal shutdown Overvoltage protection Fast demagnetization of inductive loads Reverse battery protection1
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BTS707
P-DSO-20-9
Q67060-S7010-A2
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Signal Path Designer
Abstract: No abstract text available
Text: Classic EPLD Family M ay 1999, ver. 5 Features Data Sheet • ■ ■ ■ ■ ■ ■ ■ ■ ■ Complete device family w ith logic densities of 300 to 900 usable gates see Table 1 Device erasure and reprogram m ing w ith non-volatile EPROM configuration elements
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC D5 . : - 7964142 D E § T'Jtm M a DOObbll b ' SAMSUNG SEMICONDUCTOR INC 02E 06691 D = CMOS Programmable Logic Array With Output Macrocells 24-Pin CPL22V10 ADVANCE INFORMATION FEATURES/BENEFITS DESCRIPTION • High speed CMOS programmable alternative to
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CPL22V10
24-Pin)
22V10
D00t71ñ
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Untitled
Abstract: No abstract text available
Text: FLL1200IU-2A L-Band Medium & High Power GaAs FETs f u j Ît s u FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2000 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-2A is a 120 Watt GaAs FET that employs a push-pull design that
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FLL1200IU-2A
FLL1200IU-2A
IMT-2000
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FLL1200IU2A
Abstract: IMT-2000 LDS288 FLL120 Fujitsu GaAs FET Amplifier design Fujitsu GaAs FET Amplifier
Text: FLL1200IU-2A - L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2000 to 2200 MHz. Suitable for class AB operation.
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FLL1200IU-2A
FLL1200IU-2A
IMT-2000
FCSI0598M200
FLL1200IU2A
LDS288
FLL120
Fujitsu GaAs FET Amplifier design
Fujitsu GaAs FET Amplifier
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