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    747 DIODE Search Results

    747 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    747 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EUPEC Thyristor

    Abstract: Eupec Power Semiconductors rectifire diode rectifire D2601N T4301N d911sh design sine wave power inverter T1601 D1481N
    Text: Application Note Date: 11.04.2005 AN-Number: AN2004-04 Page 1 Department:SM PHP Case non rupture current High power Semiconductors DIN IEC 60 747 – 2 Diodes and DIN IEC 747 – 6 (Thyristors) The case non rupture current is the current value by which the housing neither


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    PDF AN2004-04 D-59581 EUPEC Thyristor Eupec Power Semiconductors rectifire diode rectifire D2601N T4301N d911sh design sine wave power inverter T1601 D1481N

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SLVU550 – October 2011 TPS658640 System Evaluation Board This user’s guide describes the characteristics, operation, and use of the TPS658640EVM-747 evaluation module EVM . The TPS658640EVM-747 is a fully assembled and tested platform for evaluating the


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    PDF SLVU550 TPS658640 TPS658640EVM-747

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Letter Symbols - Diodes General LETTER SYMBOLS amb ambient The letter symbols for diodes detailed in this section are based on IEC publication number 747. AV , (av) average value (BR) breakdown (CL) clamping d diode diff differential


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    Abstract: No abstract text available
    Text: Philips Semiconductors Letter Symbols - Diodes General LETTER SYMBOLS amb ambient The letter symbols for diodes detailed in this section are based on IEC publication number 747. AV , (av) average value Basic letters (BR) breakdown (CL) clamping d diode diff


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    A1013 transistor

    Abstract: transistor A1013 A1013
    Text: 747 FIBER SENSORS Compact Size Digital Pressure Sensor DP4 SERIES Related Information •■General terms and conditions. F-17 ■■Glossary of terms. P.1373~ For Gas ■■Sensor selection guide. P.661~


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    PDF 61010C-1 S2-0200. CN-63 XAP-03V-1 A1013 transistor transistor A1013 A1013

    characteristics of zener diode in reverse bias

    Abstract: VRRM VRSM VBR pn junction full wave bridge rectifier
    Text: Symbols SYMBOLS According IEC 147 and IEC 747-2 Cd, Diode Capacitance Total capacitance between the diode terminals due to case, junction and parasitic capacitance. Cj, Junction Capacitance Capacitance due to a p-n junction of the diode. It decreases with increasing reverse voltage.


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    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD218513 SHD218513A SHD218513B TECHNICAL DATA DATA SHEET 747, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 0.60 Ohm, 11A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRFPC50


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    PDF SHD218513 SHD218513A SHD218513B IRFPC50 1/W54)

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD218513 SHD218513A SHD218513B TECHNICAL DATA DATA SHEET 747, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 600 Volt, 0.60 Ohm, 11A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRFPC50


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    PDF SHD218513 SHD218513A SHD218513B IRFPC50

    IRFPC50

    Abstract: SHD218513 SHD218513A SHD218513B
    Text: SHD218513 SHD218513A SHD218513B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 747, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 600 Volt, 0.60 Ohm, 11A MOSFET • Isolated Hermetic Metal Package • Fast Switching • Low RDS on • Electrically Equivalent to IRFPC50


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    PDF SHD218513 SHD218513A SHD218513B IRFPC50 IRFPC50 SHD218513 SHD218513A SHD218513B

    VORTEX86DX

    Abstract: vortex86 WD800BB
    Text: Reference Manual DOC. REV. 9/15/2011 Newt VL-EPIC-17 DMP Vortex-based SBC with Ethernet, USB, Serial, CompactFlash, eUSB, Analog + Digital I/O, and SPX WWW.VERSALOGIC.COM 12100 SW Tualatin Road Tualatin, OR 97062-7341 (503) 747-2261 Fax (971) 224-4708


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    PDF VL-EPIC-17) 16-bit VL-EPIC-17 VORTEX86DX vortex86 WD800BB

    new jn8

    Abstract: DDR3 soDIMM pinout 204 pins
    Text: Reference Manual DOC. REV. 10/17/2013 VL-EPM-35 Leopard Intel Dual Core Based Dual Board Computer with Dual Gigabit Ethernet, SATA, PC/104-Plus, Video, Audio, and SPX WWW.VERSALOGIC.COM 12100 SW Tualatin Road Tualatin, OR 97062-7341 (503) 747-2261 Fax (971) 224-4708


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    PDF VL-EPM-35 PC/104-Plus, 82574IT 82541ER LPC47N217 SCH3114 LPCC47N217 SCH3114 new jn8 DDR3 soDIMM pinout 204 pins

    Untitled

    Abstract: No abstract text available
    Text: Reference Manual DOC. REV. 4/3/2013 Ocelot VL-EPMs-21 Intel Atom-based SBC with Ethernet, Video, SUMIT, and PC/104 interface WWW.VERSALOGIC.COM 12100 SW Tualatin Road Tualatin, OR 97062-7341 (503) 747-2261 Fax (971) 224-4708 Copyright 2013 VersaLogic Corp. All rights reserved.


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    PDF VL-EPMs-21) PC/104 0x000D0000 0x000D3FFF 0xFFD00000 0xFFD03FFF.

    context plus fire alarm control panel

    Abstract: 82574IT
    Text: Reference Manual DOC. REV. 1/23/2014 Tiger VL-EPM-24 Intel Atom SBC with Ethernet, Video, USB, and PC/104-Plus interface WWW.VERSALOGIC.COM 12100 SW Tualatin Road Tualatin, OR 97062-7341 (503) 747-2261 Fax (971) 224-4708 Copyright 2014 VersaLogic Corp. All rights reserved.


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    PDF VL-EPM-24) PC/104-Plus PC/104 0x000D0000 0x000D3FFF 0xFFD00000 0xFFD03FFF. context plus fire alarm control panel 82574IT

    2n7504

    Abstract: 747A MOSFET cross-reference IRHF7110 mmc 4011 E
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 12 November 2010. MIL-PRF-19500/747A 12 August 2010 SUPERSEDING MIL-PRF-19500/747 12 August 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL,


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    PDF MIL-PRF-19500/747A MIL-PRF-19500/747 2N7504T2, MIL-PRF-19500. 2n7504 747A MOSFET cross-reference IRHF7110 mmc 4011 E

    semikron semiconductor fuse

    Abstract: semikron semiconductor fuse data sheet 3 phase rectifier thyristor bridge Emitter Turn-Off thyristor Thyr
    Text: Letter Symbols and Terms using IEC (60 747-1 . 9 and IEV 50) a Maximum acceleration under vibration ICETRIP Max. ICE to trip ERROR (SKiiP) b Width of the module base ICM Peak collector current B2 Two-pulse bridge connection ICp Non-repetitive peak collector current


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    Untitled

    Abstract: No abstract text available
    Text: Reference Manual DOC. REV. 10/17/2013 VL-EPICs-36 Komodo Intel Core 2 Duo Based SBC with Ethernet, Video, SUMIT and PC/104 interface WWW.VERSALOGIC.COM 12100 SW Tualatin Road Tualatin, OR 97062-7341 (503) 747-2261 Fax (971) 224-4708 Copyright 2013 VersaLogic Corp. All rights reserved.


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    PDF VL-EPICs-36 PC/104 82574IT 8257IT VL-EPICs-36

    td 32 n 1600 powerblock

    Abstract: powerblock TD 170 N dt61n dt250n
    Text: Click on outline no. Thyristor Diode Modules for Current Source Inverters ∫i2dt VRRM ITRMSM ITSM VDRM Type VRRM V V A A A²s Thyr. (Diode) 10 ms, 10 ms, Tvj max Tvj max ITAVM/Tc A/°C 180° el sin V(TO) rT (di/dt)cr mΩ V V/µs Tvj = Tvj = DIN Tvj max Tvj max IEC 747-6


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    PDF 215N22/30 215N30/22 td 32 n 1600 powerblock powerblock TD 170 N dt61n dt250n

    DG526CJ

    Abstract: DG527 equivalent DG526 DG526AK DG526BK DG526BY DG526CK DG527 DG528 DG529
    Text: Semiconductor April 1999 T UCT DUC ROD TE PRO 747 P E T 7 TITU OLE 442OBS LE SUBS s 1-800- m s.co SIB tion POS Applica p@harri A R FO Central centap call r email: o DG526, DG527, DG528, DG529 Analog CMOS Latchable Multiplexers Features Description • Direct RESET


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    PDF DG526, DG527, DG528, DG529 DG529 16-Channel/Dual DG526 DG526CJ DG527 equivalent DG526 DG526AK DG526BK DG526BY DG526CK DG527 DG528

    91740

    Abstract: MAMXES0039 9812-0 74700
    Text: MAMXES0039 E-Series Surface Mount Mixer 869 – 894 MHz 925 – 960 MHz 747 – 762 MHz SM-2 Package Features • • • LO Power +10 to +15 dBm Up to +7 dBm RF Surface Mount Description M/A-COM’s MAMXES0039 is a medium drive, Passive, Double Double Balanced Mixer constructed using Broadband


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    PDF MAMXES0039 MAMXES0039 15dBm Ran58 91740 9812-0 74700

    Untitled

    Abstract: No abstract text available
    Text: EUPEC m 4TE D 3 4 0 3 3 1}? DQ0Ü150 5TT • Thyristor-diode-modules for current source inverters V V A Itsm / i 2dt Itavm ^ c 10 ms, tvj max 10 ms, tvj max 180 °el sin. kA A2s A/°C It di/dt cr tq (dv/dt)cr Rthjc *vj = tvj max DIN typ. IEC 747-6 DIN IEC 747-6


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    EUPEC DIODE

    Abstract: A198S
    Text: EUPEC blE » • 3HD3ET7 □□□133D TT7 ■LIPEC dv/dt cr Vgt Igt RthJC DIN DIN tvj = tv) = 180 °el I EC 747-6 I EC 747-6 25 °C 25 “C sinus F a s t a s y m m e tr ic th y ris to rs Type A 198 S A 358 S "f-.'j max 10 ms, t j| max sin. ‘vi = tvi =


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    74ABT543A

    Abstract: 74ABT245 74ABT373 74ABT543AD 74ABT543ADB 74ABT543AN
    Text: INTEGRATED CIRCUITS n M I 74ABT543A Octal latched transceiver with dual enable 3-State Product specification 1995 Apr 19 IC 23 Data Handbook Philips Semiconductors PHILIPS PHILIPS 7110ÔSb D0flT15D 747 This Material Copyrighted By Its Respective Manufacturer


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    PDF 74ABT543A D0fiT150 74ABT245 74ABT373 64mA/-32mA OT355-1 MO-153AD 7110fl2b 74ABT543A 74ABT543AD 74ABT543ADB 74ABT543AN

    dt61n

    Abstract: dt250n DT18N td18n
    Text: EUPEC MIE D • 3MD35T7 DOGDiaD STI ■ Thyristor-diode-modules for current source inverters Type Vdrm Vrrm TRM SM dv/dt cr ^ th J C yp- DIN EC 747-6 180 °el sin. ns V/flS 50 100 di/dt)cr /'i2dt tavm/Ic 10 ms, 10 ms, VJ V] max 180 °el sin. VJ = v] max vj max


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    PDF 3MD35T7 dt61n dt250n DT18N td18n

    zener diodes 1N serie

    Abstract: 957b IN981B bzx96 IN4370 1N4371 bzx 96 ZENER bzx 46 c 20 969B ZENER bzx 46 c
    Text: zener diodes diodes zener Types v z t / iz t * nom V THOMSON-CSF 'ZT/IZT* >ZT max Ci) Im AI rZK / IZK max (0) (mA) 400 m W / Tam b = 50°C Tj m ax = 175°C 1N 4370 1N4371 1N 4372 1N 746 1N 747 1N 748 1N 749 1N 750 1N 751 1N 752 1N 753 1N 754 1N 755 1N 756


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    PDF 1N4371 zener diodes 1N serie 957b IN981B bzx96 IN4370 bzx 96 ZENER bzx 46 c 20 969B ZENER bzx 46 c