lm294oct
Abstract: d71054c D71055C lm294oct-12 74c928 7486 XOR GATE interfacing ADC 0808 with 8086 microprocessor 555 7490 7447 7 segment LED display Motorola 74LS76 NEC D71055C
Text: Integrated Circuits 74LS Series Featuring better performance than standard 7400 series devices, the 74LS series also uses about 1/5th the power. Part# Pins Description 74LS00 74LS01 74LS02 74LS03 74LS04 74LS05 74LS06 74LS07 74LS08 74LS09 74LS10 74LS11 74LS12
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74LS00
74LS01
74LS02
74LS03
74LS04
74LS05
74LS06
74LS07
74LS08
74LS09
lm294oct
d71054c
D71055C
lm294oct-12
74c928
7486 XOR GATE
interfacing ADC 0808 with 8086 microprocessor
555 7490 7447 7 segment LED display
Motorola 74LS76
NEC D71055C
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IC TTL 7400 diagram and truth table
Abstract: IC 7400 pin diagram data sheet IC 7400 IC TTL 7400 TTL 7400 IC 7400 truth table IC 7400 SERIES ALL DATA IC 7400 diagram and truth table data sheet 7400 IC IC 7400 datasheet
Text: CMOS PLD Using Programmable Logic Devices Introduction PLD Applications This application note covers three areas: • • Where and why do I use Programmable Logic Devices PLDs ? • How do I use PLDs? • Software and hardware support for Atmel PLDs. •
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IC TTL 7400 schematic
Abstract: TTL counters 7400 series IC TTL 7400 IC 7400 truth table cmos logic 7400 series AT22V10 P22V10 IC chip 7400 ttl databook
Text: CMOS PLD Using Programmable Logic Devices Introduction PLD Applications This application note covers three areas: • Where and why do I use Programmable Logic Devices PLDs ? • How do I use PLDs? • Software and hardware support for Atmel PLDs. • Where Do I Use PLDs?
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Using Programmable Logic Devices
Abstract: IC TTL 7400 diagram and truth table IC TTL 7400 CMOS PLD Programming manual TTL counters 7400 series IC 7400 SERIES ALL DATA IC chip 7400 datasheet ic 7400 ttl internal diagram of 7400 IC P22V10
Text: Using Programmable Logic Devices Introduction PLD Applications This application note covers three areas: • Where and why do I use Programmable Logic Devices PLDs ? • • • • • • • • • • • How do I use PLDs? • Software and hardware support for
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0485C
09/99/xM
Using Programmable Logic Devices
IC TTL 7400 diagram and truth table
IC TTL 7400
CMOS PLD Programming manual
TTL counters 7400 series
IC 7400 SERIES ALL DATA
IC chip 7400
datasheet ic 7400 ttl
internal diagram of 7400 IC
P22V10
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7400 databook
Abstract: 7400 TTL logitech TTL LS 7400
Text: TTL schematic designs processed and imple mented in EPLDs by Altera. Two programmed EPLDs returned to you. PLSTART coupon good for processing two designs. Runs on IBM XT, AT and compatible personal computers. Graphical entry of logic schematics: — Design schematics using TTL MacroFunctions
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Untitled
Abstract: No abstract text available
Text: FLM7177-4D lnteruallx Matched Power GaAs F E l s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage VGS -5 V 25 w °c °c Total Power Dissipation Pt Tc = 25°C Storage Temperature
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FLM7177-4D
1100mA
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7177-4C
Abstract: No abstract text available
Text: FLM7177-4C Internally M atch ed Power GaAs l ETs ABSOLUTE MAXIMUM RATING Am bient Tem perature Ta=25°C Item Symbol Condition Rating Unit Draln-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 25 w Total Power Dissipation Pt Tc = 25°C Storage Temperature
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FLM7177-4C
30dBm
7177-4C
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Untitled
Abstract: No abstract text available
Text: FLM7J77-8C Internally Matched Power ¡aAs FETs ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C Symbol Item Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage vgs -5 V 42.8 w Total Power Dissipation Pt Tc = 25°C Storage Temperature
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FLM7J77-8C
2200mA
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Untitled
Abstract: No abstract text available
Text: FLM6472-8C Internally Matched Power GaAs F El's ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Symbol Item Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 42.8 w -65 t o +175 °c °c Total Power Dissipation Channel Temperature
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FLM6472-8C
33dBm
31dBm
29dBm
27dBm
25dBm
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Untitled
Abstract: No abstract text available
Text: FLM6472-4C Internally Ma tch ed Power G a As FETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Symbol Item Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 25 w Total Power Dissipation Pt Tc = 25°C Storage Temperature
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FLM6472-4C
Sou52
-30dBm
26dBm
24dBm
22dBm
20dBm
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Untitled
Abstract: No abstract text available
Text: FLM6472-35DA Internally Matched Power GaAs l ETs ABSOLUTE MAXIMUM RATING Am bient Tem perature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 115.4 w Total Power Dissipation pt Tc = 25°C Storage Temperature
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FLM6472-35DA
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OZ532
Abstract: No abstract text available
Text: FLM6472-6I Internally Matched Power ¡aAs FETs ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Condition Symbol Kem Rating Unit Drain-Source Voltage vds 15 V Gate-Source Voltage vgs -5 V 31.2 w Total Power Dissipation Tc = 25°C pt Storage Temperature
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FLM6472-6I)
Volt21
31dBm
29dBm
27dBm
25dBm
23dBm
OZ532
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6472-4D
Abstract: No abstract text available
Text: FLM6472-4D Internally Matched Power GaAs FETs ABSOLUTE MAXIMUM RATING Am bient Tem perature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 25 w Total Power Dissipation Tc = 25°C Pt Storage Temperature
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FLM6472-4D
6472-4D
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Untitled
Abstract: No abstract text available
Text: FLM6472-18DA Internally Matched Power GaAs b'ETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage VGS -5 V 83.3 w °c °c Total Power Dissipation Pt Tc = 25°C Storage Temperature
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FLM6472-18DA
Sou12
37dBm
35dBm
33dBm
31dBm
29dBm
27dBm
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FLM7177-8C
Abstract: No abstract text available
Text: FLM7177-8C FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39dBm Typ. High Gain: G ^ b = 7.0dB (Typ.) High PAE: riadd = 29% (Typ.) Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package
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FLM7177-8C
39dBm
7177-8C
FLM7177-8C
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Untitled
Abstract: No abstract text available
Text: F L M 6472-HD Internally Matched Power GaAs ¡ E l s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 42.8 w °c °c Total Power Dissipation Pt Tc = 25°C Storage Temperature
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6472-HD
2200mA
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Untitled
Abstract: No abstract text available
Text: F, , FLM6472-4C J Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 36dBm Typ. High Gain: G ^ b = 8.0dB (Typ.) High PAE: riadd = 30% (Typ.) Broad Band: 6.4 ~7.2GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package
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FLM6472-4C
36dBm
FLM6472-4C
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Untitled
Abstract: No abstract text available
Text: FLM7177-IHDA Internally Matched Power G a As FETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Symbol Item Condition Rating Unit Draln-Souree Voltage VDS 15 V Gate-Source Voltage VGS -5 V 83.3 w Total Power Dissipation Tc = 25°C pt Storage Temperature
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FLM7177-IHDA
37dBm
------34dBm
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SCL 1058
Abstract: 6472-12DA
Text: F L M 6 4 72 -I 2DA Internally Matched Power GaAs l-'ETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Condition Symbol Rating Unit Drain-Source Voltage vds 15 V Gate-Source Voltage vgs -5 V 57.6 w °c °c Total Power Dissipation Tc = 25°C pt
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35dBm
33dBm
31dBm
29dBm
27dBm
25dBm
SCL 1058
6472-12DA
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Untitled
Abstract: No abstract text available
Text: Rr IUJlîrT Q i 11jU FLM6472-8C Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39dBm (Typ. High Gain: = 7.0dB (Typ.) High PAE: riadd = 29% (Typ.) Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package
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IUJ11Q
FLM6472-8C
39dBm
FLM6472-8C
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GaAs FETs
Abstract: No abstract text available
Text: FLM7177-12DA Internally Matched Power iaAs F E l s ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage vgs -5 V 57.6 w Total Power Dissipation Tc = 25°C pt Storage Temperature
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FLM7177-12DA
3100mA
GaAs FETs
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Untitled
Abstract: No abstract text available
Text: FLM6472-8D Internally Matched Power GaAs FETs RI lîrrQi r UJ11jU FEATURES • • • • • • • High Output Power: P ^ b = 39dBm (Typ. High Gain: = 7.0dB (Typ.) High PAE: riadd = 29% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q
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FLM6472-8D
UJ11jU
39dBm
-45dBc
28dBm
FLM6472-8D
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FLM7177-18DA
Abstract: U/25/20/TN26/15/850/FLM6472-18DA
Text: FLM7177-18DA Internally Matched Power GaAs FETs r UJ11j U FEATURES • • • • • • • High Output Power: P-idB = 42.5dBm Typ. High Gain: G ^ b = 7.5dB (Typ.) High PAE: riadd = 30% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q
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FLM7177-18DA
UJ111
-45dBc
FLM7177-18DA
U/25/20/TN26/15/850/FLM6472-18DA
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FLM6472-12d
Abstract: FLM6472-12DA
Text: F| FLM6472-12DA . r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 41 dBm Typ. High Gain: G ^ b = 7.5dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q
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FLM6472-12DA
41dBm
-45dBc
30dBm
FLM6472-12DA
FLM6472-12d
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