sn74ls86 function
Abstract: SN74LS14N sn74ls74an SN74LS47N Datasheet SN74LS47N SN74LS90N datasheet SN74LS244N SN74LS123N sn74ls86n sn74ls00n
Text: Texas Instruments - ON Semiconductor LS Products Cross-Reference ON Semi Function Generic Part Number 0 SN74LS00 0 SN74LS00 0 SN74LS00 0 SN74LS00 0 SN74LS00 2 SN74LS02 2 SN74LS02 2 SN74LS02 4 SN74LS04 4 SN74LS04 4 SN74LS04 5 SN74LS05 5 SN74LS05 5 SN74LS05
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SN74LS00
SN74LS02
SN74LS04
sn74ls86 function
SN74LS14N
sn74ls74an
SN74LS47N Datasheet
SN74LS47N
SN74LS90N datasheet
SN74LS244N
SN74LS123N
sn74ls86n
sn74ls00n
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74AS871
Abstract: No abstract text available
Text: TEXAS INSTR LOGIC NOTICE SEE ORDER OF DATA FOR ERRATA ESE D • fiU17S3 QOflBTEE 1 ■ T-Vg-0?-0? S N 5 4 A LS 8 70 , SN 5 4AS 8 70 , S N 5 4 A LS 8 71, SN 5 4 A S 8 71 S N 74 A LS 8 70 , S N 74 A S 8 70 , S N 7 4 A L S 8 7 1 , S N 74 A S 8 71 INFORMATION
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fiU17S3
16-BY-4
1982-R
ALS870
AS870
24-Pin
300-mil
28-Pin
SN54ALS870,
SN54AS870
74AS871
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ic 74192 pin diagram
Abstract: LA 4289 74192 ic 74192 counter ic 74192 74ls192 74192PC
Text: 192 C O N N E C T IO N DIAGRAM PINOUT A 54/74192 6 / * ° ^ 54LS/74LS192 O l o ü U ^ UP/DOWN DECADE COUNTER With Separate Up/Down Clocks P i[ T Tèi vcc o ,H H J po Qod 33 MR [7 T5] t c d CPd CPuU D ESCRIPTIO N — T h e ’ 192 is an u p /d o w n B C D d e c a d e (8421) co u n ter. S e p a
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54LS/74LS192
54/74LS
ic 74192 pin diagram
LA 4289
74192 ic
74192 counter
ic 74192
74ls192
74192PC
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Untitled
Abstract: No abstract text available
Text: DIXYS Advanced Technical Information HiPerFET Power MOSFETs V DSS IXFH/IXFT68N20 IXFH/IXFT74N20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Maximum Ratings TO-247 AD IXFH V DSS Td = 25°C to 150°C 200 V vDGR Td = 25°C to 150°C; RGS = 1 M£i
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IXFH/IXFT68N20
IXFH/IXFT74N20
O-247
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Lambda lss
Abstract: LSS-37-12 LST-39-144 Lambda lss-36-5 LSS-39-28 lss-38-24 LSS-34-15 ISS362 LSS-37-24 LSS-35-24
Text: Part I - AC-to-DC Power Supplies LAM BDA'S LS SERIES High Density, Low Cost Power Supplies Space is always at a premium in electronic applications, and form factor plays an important role in utilization of that space. Lambda's LS Series provides single and
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2000VAC
132VAC.
LST-39
LST-40
LST-40
1-800-LAMBDA-4
Lambda lss
LSS-37-12
LST-39-144
Lambda lss-36-5
LSS-39-28
lss-38-24
LSS-34-15
ISS362
LSS-37-24
LSS-35-24
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E355D
Abstract: mikroelektronik RFT A283D B3370 D100D information applikation B083D SN28654N SN28654 A277D
Text: ïTTfe Information Applikation Ü b e rsic h t VEB HALBLEITERWERK FRANKFURT ODER âl-< I n r D D G ^ Ö E i s W s n o r i i H IN F O R M A T IO N - A P P L IK A T IO N Bipolare integrierte Schaltkreise des VEB Halbleiterwerk Frankfurt /O d e r H e ft 20
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LS192
Abstract: master slave jk flip flop LS193
Text: T54tSt&2/193 T74ütt92/193 LS192 - PRESETTABLE BCD/DECADE UP/DOWN COUNTER LS193 - PRESETTABLE 4-BIT BINARY UP/DOWN COUNTER DESCRIPTION The T54LS192/T74LS192 is a UP/DOWN BCD De cade 8421 Counter and the T54LS193/T74LS193 is an UP/DOWN Modulo-16 Binary Counter. Sepa
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T54IS1
LS192
LS193
T54LS192/T74LS192
T54LS193/T74LS193
Modulo-16
master slave jk flip flop
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D1710
Abstract: GEC20F 3002SM
Text: DRAWING NO. 1. UNLESS OTHERWISE SPECIFIED TOLERANCES ARE ± .0 1 0 ” .2 5 4 m m REV. D 1 2 — 3002SM .997 MAX (25.32mm) MATERIALS: BASE HOUSING: ALUMINUM SUBSTRATE: BERYLLIUM OXIDE RESISTIVE FILM: NICHROME SCREWS: STAINLESS STEEL CONNECTOR: BODY k C. NUT: STAINLESS STEEL PER ASTM A582
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3002SM
D1710
STD-202
12-3002SM
GEC20F
3002SM
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HBF4727A
Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product
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k3882
Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
Text: [ n r D D lk D ^ i^ B lB k f a n a n ilK Halbleiter-Bauelemente Kurzinformation D ie M ik ro e le k tro n ik e rw e is t sich in te rn a tio n a l m e h r u n d m eh r a ls e in e n ts c h e id e n d e r F a k to r be i d e r D u rc h s e tz u n g d e s w isse n s c h a ftlic h -te c h n is c h e n F o rts c h ritte s a lle r B ere ich e d e r W irts c h a ft un d
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DN74LS157
Abstract: No abstract text available
Text: LS TTL DN74LS Series DN74LS157 M 74 lS 15 7 DN74LS157 Quad 2 -lin e to 1 -lin e Data S e le c to r s/ Multiplexers • Description P-2 D N 7 4 L S 1 5 7 contain s four 2-line to m u ltiplexer circuits. ■ • • • • 1-line data selector/ Features C om m on enable inp ut for all fou r circuits
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DN74LS
DN74LS157
DN74LS157
16-pin
SO-16D)
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information applikation
Abstract: "Mikroelektronik" Heft mikroelektronik Heft CDB4151 mikroelektronik Heft 12 MH8475 MH7442 Mikroelektronik Information Applikation information applikation mikroelektronik CDB4153
Text: ' 1 o lE h f c p o n ih Information Applikation s o c h a lH ü n o n il- c Information Applikation HEFT 25 I M P O R T - I S T E IL 1 Ivob Halbleiterwerk frankfurt/ader | b e trie b im m b kom binat m ikroelektronik ] KAMMER DER TECH N IK I Bezirksvorstand Frankfurt/O.
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72N2
Abstract: diode 253 SMD-264 TO-264-aa 80N20
Text: OIXYS Preliminary data vDSS HiPerFET Power MOSFETs ^D25 RDS on 200 V 72 A 35 mQ 200 V 80 A 30 mQ t < 200 ns IXFK72N20 IXFK80N20 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t„ Symbol Test Conditions Maximum Ratings VDSS VDGR Tj = 25°C to 150°C
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IXFK72N20
IXFK80N20
72N20
80N20
80N20
O-264
UL94V-0
IXFK72N2Ô
72N2
diode 253
SMD-264
TO-264-aa
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h48 diode SPECIFICATIONS
Abstract: DIODE 248
Text: • R ADVANCED r M po w er Tec h n o lo g y APT60M75JVR 6oov 62a 0.075Q POWER MOS V P ow er M OS V is a new generation o f high voltage N -C hannel enhancem ent m ode pow er M O S FE Ts. This new technolo gy m inim izes the JF E T effect, increases packing d ensity and reduces the on-resistance. Power M OS V®
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APT60M75JVR
OT-227
APT60M75JVR
Con04)
E145592
h48 diode SPECIFICATIONS
DIODE 248
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36N50
Abstract: IXTN 36N50 C N36N50 ixys ixtn 36n50 IXTN36N50
Text: MegaMOS FRED IXTN36N50 V DSS = 500 V lD26 = 36 A ^ D S o n = 0 -1 2 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings v DSS Tj = 25°C to 150°C V Tj = 25°C to 150°C; RGS = 10 500 V 500 V Continuous +20 V T ransient ±30 V ^□25 Tc = 25°C
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IXTN36N50
OT-227
36N50
36N50
IXTN 36N50 C
N36N50
ixys ixtn 36n50
IXTN36N50
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Untitled
Abstract: No abstract text available
Text: • R ADVANCED r M po w er Tec h n o lo g y APT10025JVFR 1000v 34a 0.250Q POWER MOS V‘ FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10025JVFR
1000v
OT-227
APT10025JVFR
Con65)
E145592
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apt50m85jvr
Abstract: No abstract text available
Text: • R ADVANCED APT50M85JVR W /Æ P o w e r Techno lo g y soov soa o.ossq POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®
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APT50M85JVR
OT-227
APT50M85JVR
E145592
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ITT 7400
Abstract: EI 33 GVA-60 DSAGER00065 itt 129 i8428 ei 306 20 64
Text: ^ r a - •"i 1 1 t 1 1 1 i 1 1 1 1 1 <5 L- t» c a) B ild 5.4. K e rn e ; a - Schenkelkern, b - M antelkern Bild 5.5. V erschiedene gebräuchliche K em b lech sch n itte fü r Ü b e rtra g e r; a - M -S ch n itt, b - E i-S c h n itt, c - U l-S ch n itt
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HC192
Abstract: No abstract text available
Text: _ / S T A 7f SbE D • 7^2=1237 D D M O O l b S2? ■ S 6 T H _ S G S - T H O M S O N M 5 4 /7 4 H C 1 9 2 m m s m E g m » ! _ M 5 4 /7 4 H C 1 9 3 HC192 - SYNCHRONOUS UP/DOWN DECADE COUNTER HC193 - SYNCHRONOUS UP/DOWN BINARY COUNTER
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HC192
HC193
54/74LS192-193
M54/74HC192/193
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Untitled
Abstract: No abstract text available
Text: □ IXYS Advanced Technical Information HiPerFET Power MOSFETs Q-Class IXFH20N80Q IXFK20N80Q IXFT20N80Q V DSS = ^D25 ” RDS on 800 V 20 A — 0.42 n t < 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Q g, High dv/dt rr {&• V . os Maximum Ratings
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IXFH20N80Q
IXFK20N80Q
IXFT20N80Q
O-247
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APT40M70JVR
Abstract: EN805
Text: • R A dvan c ed W/Æ P ow er Techno lo g y APT40M70JVR 4oov 53a o.o7oq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT40M70JVR
OT-227
E145592
EN805
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Untitled
Abstract: No abstract text available
Text: • R W 'æ A A P T 10 0 5 0 J V R dvanced pow er Te c h n o l o g y ' 1000v i 9a o.sooq POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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1000v
OT-227
APT10050JVR
E145592
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Untitled
Abstract: No abstract text available
Text: APT50M50JVR • R A dvanced W 'æ p o w e r Te c h n o l o g y ' so o v 77 a o .o s o q POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT50M50JVR
OT-227
APT50M50JVR
E145592
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Untitled
Abstract: No abstract text available
Text: H B 5 A dvanced W 'æ po w er Tec h n o lo g y ' APT8030JVR soov 25a 0.300q POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT8030JVR
OT-227
APT8030JVR
E145592
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