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    MSM5116180-70

    Abstract: MSM5116180-80
    Text: O K I Semiconductor MSM5116180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.


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    PDF MSM5116180_ 576-Word 18-Bit MSM5116180 cycles/64ms MSM5116180-70 MSM5116180-80

    a11u

    Abstract: taser circuit 42-PIN DD1752
    Text: O K I Semiconductor MSM51V16160_ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16160 is a new generation Dynamic RAM organized as 1,048,576-word x 16-bit configuration. The technology used to fabricate the MSM51V16160 is OKI's CMOS silicon gate process technology.


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    PDF MSM51V16160_ 576-Word 16-Bit MSM51V16160 cycles/64ms a11u taser circuit 42-PIN DD1752

    M50 .0022

    Abstract: MSM5116400
    Text: O K I Semiconductor MSC23841-XXBS20/DS20 8,388,608-Word by 40-Bit DRAM Module: Fast Page Mode D ESC R IP TIO N The OKI M SC 23841-xxBS20/D S20 is a fully decoded 8,388,608-word x 40-bit CM OS Dynamic Random Access Memory Module composed of twenty 16-Mb DRAMs in SOJ M SM5116400 packages mounted


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    PDF MSC23841-XXBS20/DS20 608-Word 40-Bit MSC23841-xxBS20 /DS20 16-Mb MSM5116400) 72-pin M50 .0022 MSM5116400

    b72L

    Abstract: IFM D100 M2116 OCM206 OCM216 OCM217 OCM226 OCM227 OCM246 OCM247
    Text: O K I electronic com ponents OCM 2X 6, 2X 7 SER IES Bidirectional Optical MOS Relay GENERAL DESCRIPTION The OCM2X6 and OCM2X7 Series are bidirectionsl AC optical MOS relays that are low er in cost than the OCM2XO/2X1 Series. The input portion is a GaAs infrared light emitting diode. The output


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    PDF 10-mA 0CM246/247 b724240 L724240 b72L IFM D100 M2116 OCM206 OCM216 OCM217 OCM226 OCM227 OCM246 OCM247

    m51171

    Abstract: m32AG M5116
    Text: OKI Semiconductor MSM5116180_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.


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    PDF MSM5116180 576-Word 18-Bit MSM5116180 cycles/64ms m51171 m32AG M5116