sigmaquad-II
Abstract: SC10 Computing 72MBIT
Text: GSI TECHNOLOGY ANNOUNCES SAMPLING OF 72MBIT SIGMAQUAD-II /SIGMADDR-II™ FAMILY — Partners with Pico Computing — Sunnyvale, Calif. & Seattle, Wash. — November 16, 2010 — GSI Technology, Inc. Nasdaq: GSIT today announced that the 72Mbit SigmaQuad-II+™/SigmaDDR-II+™
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72MBIT
72Mbit
GS8662
165-bump,
sigmaquad-II
SC10
Computing
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siemens power transistor
Abstract: No abstract text available
Text: Industry’s smallest 72Mbit Direct Rambus For the trade and technical press Munich, November 1998 electronica ’98 Industry’s smallest 72Mbit Direct RambusTM DRAMs available Siemens Semiconductors announced the first functional silicon of 72Mbit Direct Rambus DRAMs
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72Mbit
/Silvio/Projekte/Aktuell/temp/htm/9811007e
58mm2
20micron
D-80312
siemens power transistor
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renesas tcam
Abstract: tcam renesas FBGA Shipping Trays 10GHz counters DDR PHY ASIC TCAM
Text: High-speed 72Mbit QDR II+ & DDR™II+ SRAMs Standards-compliant 533MHz memory designed for faster network switches and routers Key Features Power Supply • 1.8V ± 0.1V for core VDD , 1.4V to VDD for I/O (VDDQ) The new 72Mbit fast SRAMs built using 45nm process technology enable advanced
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72Mbit
533MHz
0410/in-house/PF/SP
R10PF0002EU0100
renesas tcam
tcam renesas
FBGA Shipping Trays
10GHz counters
DDR PHY ASIC
TCAM
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cq 545
Abstract: No abstract text available
Text: 72Mbit DDR ESRAM 2Mx36 Preliminary Data Sheet Overview Features Description • • • • • • • • • • • The Enhanced Memory Systems SS2615 DDR ESRAM is a 72Mbit double data rate I/O memory device that combines a high speed signalling interface with an
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72Mbit
2Mx36
SS2615
209-ball
SS2615
209-ball
cq 545
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04nS
Abstract: cq 545 72MBIT
Text: 72Mbit DDR ESRAM 2Mx36 Preliminary Data Sheet Overview Features Description • • • • • • • • • • • The Enhanced Memory Systems SS2615 DDR ESRAM is a 72Mbit double data rate I/O memory device that combines a high speed signalling interface with an
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72Mbit
2Mx36
SS2615
209-ball
SS2615
209-ball
04nS
cq 545
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concurrent rdram
Abstract: RDRAM CONCURRENT es a 00112 concurrent rdram 72 mbit concurrent RDRAM 72 9 rambus concurrent rdram R64MC-50-600 SVP-32 rdram clock generator concurrent RDRAM 72
Text: Preliminary Information Concurrent RDRAM ® 16/18Mbit 2Mx8/9 & 64/72Mbit (8Mx8/9) RAMBUS Overview The 16/18/64/72-Mbit Concurrent Rambus DRAMs (RDRAM) are extremely high-speed CMOS DRAMs organized as 2M or 8M words by 8 or 9 bits. They are capable of bursting unlimited lengths of data at 1.67 ns
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16/18Mbit
64/72Mbit
16/18/64/72-Mbit
600MHz
DL0029-07
concurrent rdram
RDRAM CONCURRENT
es a 00112
concurrent rdram 72 mbit
concurrent RDRAM 72 9
rambus concurrent rdram
R64MC-50-600
SVP-32
rdram clock generator
concurrent RDRAM 72
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Untitled
Abstract: No abstract text available
Text: 72Mbit DDR ESRAM 2Mx36 Preliminary Datasheet Features • • • • • • • • • • • Description 72Mbit Density 300 MHz Clock Rate, 600Mbps Data Rate Low Latency Cached DRAM Architecture Pin Selectable Read/Write Latency Burst Length of Eight
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72Mbit
2Mx36
600Mbps
209-ball
144Mb
SS2615
545-DRAM;
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SS2625Q-6
Abstract: 6T36A
Text: 72Mbit Pipelined BSRAM w/ NoBL Architecture 2Mx36 Preliminary Data Sheet Features Description • • The Enhanced Memory Systems SS2625 is a 72-Mbit synchronous pipelined burst SRAM designed specifically to support back-to-back read/write operations without the
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72Mbit
2Mx36
SS2625
72-Mbit
119-ball
SS2625B-10
SS2625Q1-6
SS2625Q-6
6T36A
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da53
Abstract: KM418RD4C D-B54
Text: Preliminary Direct RDRAM KM418RD4C 72Mbit RDRAM 256K x 18 bit x 16 Dependent Banks Direct RDRAMTM Revision 0.9 April 1999 Rev. 0.9 Apr. 1999 KM418RD4C Preliminary Direct RDRAM™ Revision History Version 0.7 September. 1998 - Target - First copy. - Based on the Rambus Datasheet ver. 0.7.
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KM418RD4C
72Mbit
da53
KM418RD4C
D-B54
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Untitled
Abstract: No abstract text available
Text: 72Mbit Pipelined BSRAM w/ NoBL Architecture 2Mx36 Preliminary Datasheet Features Description • • The Enhanced Memory Systems SS2625 is a 72-Mbit synchronous pipelined burst SRAM designed specifically to support back-to-back read/write operations without the
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72Mbit
2Mx36
SS2625
72-Mbit
119-ball
SS2625B-10
SS2625Q1-6
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Untitled
Abstract: No abstract text available
Text: 72Mbit Pipelined BSRAM w/ NoBL Architecture 2Mx36 Preliminary Datasheet Features Description • • The Enhanced Memory Systems SS2625 is a 72-Mbit synchronous pipelined burst SRAM designed specifically to support back-to-back read/write operations without the
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72Mbit
2Mx36
SS2625
72-Mbit
119-ball
SS2625B-10
SS2625Q1-6
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K8D3216UBC-pi07
Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM
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BR-05-ALL-002
K8D3216UBC-pi07
K5E5658HCM
KAD070J00M
KBH10PD00M
K5D1257ACM-D090000
samsung ddr2 ram MTBF
KBB05A500A
K801716UBC
k5d1g13acm
k5a3281ctm
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CY7C1355C
Abstract: No abstract text available
Text: CY7C1355C, CY7C1357C 9-Mbit 256 K x 36 / 512 K × 18 Flow-Through SRAM with NoBL Architecture 9-Mbit (256 K × 36 / 512 K × 18) Flow-through SRAM with NoBL™ Architecture Features Functional Description • No Bus Latency™ (NoBL™) architecture eliminates dead
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CY7C1355C,
CY7C1357C
CY7C1355C/CY7C1357C
CY7C1355C
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CY7C25442KV18
Abstract: CY7C25442KV18-300BZI 78 ball fbga thermal resistance 3M Touch Systems
Text: CY7C25442KV18 72-Mbit QDR II+ SRAM 2-Word Burst Architecture 2.0 Cycle Read Latency with ODT Features • Separate independent read and write data ports ❐ Supports concurrent transactions ■ 333 MHz clock for high bandwidth ■ 2-word burst for reducing address bus frequency
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CY7C25442KV18
72-Mbit
CY7C25442KV18
CY7C25442KV18-300BZI
78 ball fbga thermal resistance
3M Touch Systems
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Untitled
Abstract: No abstract text available
Text: CY7C1548KV18/CY7C1550KV18 72-Mbit DDR II+ SRAM Two-Word Burst Architecture 2.0 Cycle Read Latency 72-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) Features Configurations • 72-Mbit density (4 M x 18, 2 M × 36) With Read Cycle Latency of 2.0 cycles:
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CY7C1548KV18/CY7C1550KV18
72-Mbit
450-MHz
CY7C1548KV18
CY7C1550KV18
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CY7C1570KV18
Abstract: No abstract text available
Text: CY7C1568KV18/CY7C1570KV18 72-Mbit DDR II+ SRAM Two-Word Burst Architecture 2.5 Cycle Read Latency 72-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) Features Configurations • 72-Mbit density (4 M x 18, 2 M × 36) With Read Cycle Latency of 2.5 cycles:
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CY7C1568KV18/CY7C1570KV18
72-Mbit
CY7C1568KV18
CY7C1570KV18
CY7C1570KV18
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Untitled
Abstract: No abstract text available
Text: CY7C1521KV18 72-Mbit DDR II SRAM Four-Word Burst Architecture 72-Mbit DDR II SRAM Four-Word Burst Architecture Features Configurations • 72-Mbit Density 2 M x 36 CY7C1521KV18 – 2 M × 36 ■ 250 MHz Clock for High Bandwidth Functional Description ■
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CY7C1521KV18
72-Mbit
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da53
Abstract: HY5R128HC745 HY5R128HC840 HY5R128HC845 HY5R144HC653 HY5R144HC745 HY5R144HC840 HY5R144HC845 HY5R144HM745 HY5R144HM845
Text: Direct RDRAM 128/144Mbit 256Kx16/18x32s Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and
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128/144Mbit
256Kx16/18x32s)
128/144-Mbit
600MHz
800MHz
DL0059-00
da53
HY5R128HC745
HY5R128HC840
HY5R128HC845
HY5R144HC653
HY5R144HC745
HY5R144HC840
HY5R144HC845
HY5R144HM745
HY5R144HM845
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direct rdram rambus 1200
Abstract: No abstract text available
Text: 800/1066/1200 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high
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600MHz
DL-0118-07
direct rdram rambus 1200
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hyundai rdram
Abstract: REF05
Text: HYRDU64164 / HYRDU72184 Series 64/72Mbit Direct RDRAM • HYUNDAI Advanced Information O verview The Direct Rambus™ DRAM Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and
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HYRDU64164
HYRDU72184
64/72Mbit
600MHz
800MHz
Mar98
hyundai rdram
REF05
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Untitled
Abstract: No abstract text available
Text: vivremo VM75720 Y a lE O!££'%• SINGLE CHIP DATA RECOVERY CHANNEL ADVANCE INFORMATION DESCRIPTION FEATURES • • • • • • • • • • • • • Operation Up to 72Mbit/s NRZ Supports 1,7 Code Supports Zoned-Density Recording Operation From a Single 5V Supply
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VM75720
72Mbit/s
100-Lead
VM75720
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hfdw
Abstract: No abstract text available
Text: _ ü 16/18Mbit 2Mx8/9 & 64/72Mbit (8Mx8/9) ConcurrentRDRAM Overview VDD GND BUSDATA[8] GND BUSDATA[7] (NC) BUSENABLE VDD BUSDATA[6] GND BUSDATA[5] VDDA RXCLK GNDA TXCLK VDD BUSDATA[4] GND BUSCTRL SIN VREF SOUT BUSDATA[3] GND BUSDATA[2] (NC)
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16/18Mbit
64/72Mbit
16/18/64/72-M
600MHz
hfdw
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RJH 30 E3
Abstract: RDRAM Clock S5550 HYRDU64164 HYRDU72184 REF05
Text: » « r u H P f t i • HYRDU64164 / HYRDU72184 SERIES 64/72MBIT DIRECT RDRAMTM > Advanced Information Overview The Direct Rambus DRAM (Direct RDRAM™ is a general purpose high-perform ance m em ory device suitable fo r use in a broad range o f applications
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HYRDU64164
HYRDU72184
64/72MBIT
RJH 30 E3
RDRAM Clock
S5550
REF05
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intel 80196 microcontroller pin diagram
Abstract: baw 92 FIFO buffer "variable threshold" 256Kbyte-SRAM intel 80196 microcontroller SCSI16 68HC11 BA10 BA11 BA12
Text: 2 1 3 ^ 3 ^ 0004503 205 S C I R CL-SH5500 'iCIRRUS LOGIC R> P roduct Bulletin FEATURES SCSI Interface • Supports 8- or 16-bit Fast/Wide data bus ■ Fast/Wide DMA/PIO transfers up to 20 Mbytes/ second ■ Supports SCSI-2 Initiator and Target Modes ■ Data Streaming Mode with automatic disconnect
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CL-SH5500
16-bit
48-mA
intel 80196 microcontroller pin diagram
baw 92
FIFO buffer "variable threshold"
256Kbyte-SRAM
intel 80196 microcontroller
SCSI16
68HC11
BA10
BA11
BA12
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