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    sigmaquad-II

    Abstract: SC10 Computing 72MBIT
    Text: GSI TECHNOLOGY ANNOUNCES SAMPLING OF 72MBIT SIGMAQUAD-II /SIGMADDR-II™ FAMILY — Partners with Pico Computing — Sunnyvale, Calif. & Seattle, Wash. — November 16, 2010 — GSI Technology, Inc. Nasdaq: GSIT today announced that the 72Mbit SigmaQuad-II+™/SigmaDDR-II+™


    Original     		PDF 72MBIT 72Mbit GS8662 165-bump, sigmaquad-II SC10 Computing

    siemens power transistor

    Abstract: No abstract text available
    Text: Industry’s smallest 72Mbit Direct Rambus For the trade and technical press Munich, November 1998 electronica ’98 Industry’s smallest 72Mbit Direct RambusTM DRAMs available Siemens Semiconductors announced the first functional silicon of 72Mbit Direct Rambus DRAMs


    Original     		PDF 72Mbit /Silvio/Projekte/Aktuell/temp/htm/9811007e 58mm2 20micron D-80312 siemens power transistor

    renesas tcam

    Abstract: tcam renesas FBGA Shipping Trays 10GHz counters DDR PHY ASIC TCAM
    Text: High-speed 72Mbit QDR II+ & DDR™II+ SRAMs Standards-compliant 533MHz memory designed for faster network switches and routers Key Features  Power Supply • 1.8V ± 0.1V for core VDD , 1.4V to VDD for I/O (VDDQ) The new 72Mbit fast SRAMs built using 45nm process technology enable advanced


    Original     		PDF 72Mbit 533MHz 0410/in-house/PF/SP R10PF0002EU0100 renesas tcam tcam renesas FBGA Shipping Trays 10GHz counters DDR PHY ASIC TCAM

    cq 545

    Abstract: No abstract text available
    Text: 72Mbit DDR ESRAM 2Mx36 Preliminary Data Sheet Overview Features Description • • • • • • • • • • • The Enhanced Memory Systems SS2615 DDR ESRAM is a 72Mbit double data rate I/O memory device that combines a high speed signalling interface with an


    Original     		PDF 72Mbit 2Mx36 SS2615 209-ball SS2615 209-ball cq 545

    04nS

    Abstract: cq 545 72MBIT
    Text: 72Mbit DDR ESRAM 2Mx36 Preliminary Data Sheet Overview Features Description • • • • • • • • • • • The Enhanced Memory Systems SS2615 DDR ESRAM is a 72Mbit double data rate I/O memory device that combines a high speed signalling interface with an


    Original     		PDF 72Mbit 2Mx36 SS2615 209-ball SS2615 209-ball 04nS cq 545

    concurrent rdram

    Abstract: RDRAM CONCURRENT es a 00112 concurrent rdram 72 mbit concurrent RDRAM 72 9 rambus concurrent rdram R64MC-50-600 SVP-32 rdram clock generator concurrent RDRAM 72
    Text: Preliminary Information Concurrent RDRAM ® 16/18Mbit 2Mx8/9 & 64/72Mbit (8Mx8/9) RAMBUS Overview The 16/18/64/72-Mbit Concurrent Rambus DRAMs (RDRAM) are extremely high-speed CMOS DRAMs organized as 2M or 8M words by 8 or 9 bits. They are capable of bursting unlimited lengths of data at 1.67 ns


    Original     		PDF 16/18Mbit 64/72Mbit 16/18/64/72-Mbit 600MHz DL0029-07 concurrent rdram RDRAM CONCURRENT es a 00112 concurrent rdram 72 mbit concurrent RDRAM 72 9 rambus concurrent rdram R64MC-50-600 SVP-32 rdram clock generator concurrent RDRAM 72

    Untitled

    Abstract: No abstract text available
    Text: 72Mbit DDR ESRAM 2Mx36 Preliminary Datasheet Features • • • • • • • • • • • Description 72Mbit Density 300 MHz Clock Rate, 600Mbps Data Rate Low Latency Cached DRAM Architecture Pin Selectable Read/Write Latency Burst Length of Eight


    Original     		PDF 72Mbit 2Mx36 600Mbps 209-ball 144Mb SS2615 545-DRAM;

    SS2625Q-6

    Abstract: 6T36A
    Text: 72Mbit Pipelined BSRAM w/ NoBL Architecture 2Mx36 Preliminary Data Sheet Features Description • • The Enhanced Memory Systems SS2625 is a 72-Mbit synchronous pipelined burst SRAM designed specifically to support back-to-back read/write operations without the


    Original     		PDF 72Mbit 2Mx36 SS2625 72-Mbit 119-ball SS2625B-10 SS2625Q1-6 SS2625Q-6 6T36A

    da53

    Abstract: KM418RD4C D-B54
    Text: Preliminary Direct RDRAM KM418RD4C 72Mbit RDRAM 256K x 18 bit x 16 Dependent Banks Direct RDRAMTM Revision 0.9 April 1999 Rev. 0.9 Apr. 1999 KM418RD4C Preliminary Direct RDRAM™ Revision History Version 0.7 September. 1998 - Target - First copy. - Based on the Rambus Datasheet ver. 0.7.


    Original     		PDF KM418RD4C 72Mbit da53 KM418RD4C D-B54

    Untitled

    Abstract: No abstract text available
    Text: 72Mbit Pipelined BSRAM w/ NoBL Architecture 2Mx36 Preliminary Datasheet Features Description • • The Enhanced Memory Systems SS2625 is a 72-Mbit synchronous pipelined burst SRAM designed specifically to support back-to-back read/write operations without the


    Original     		PDF 72Mbit 2Mx36 SS2625 72-Mbit 119-ball SS2625B-10 SS2625Q1-6

    Untitled

    Abstract: No abstract text available
    Text: 72Mbit Pipelined BSRAM w/ NoBL Architecture 2Mx36 Preliminary Datasheet Features Description • • The Enhanced Memory Systems SS2625 is a 72-Mbit synchronous pipelined burst SRAM designed specifically to support back-to-back read/write operations without the


    Original     		PDF 72Mbit 2Mx36 SS2625 72-Mbit 119-ball SS2625B-10 SS2625Q1-6

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    CY7C1355C

    Abstract: No abstract text available
    Text: CY7C1355C, CY7C1357C 9-Mbit 256 K x 36 / 512 K × 18 Flow-Through SRAM with NoBL Architecture 9-Mbit (256 K × 36 / 512 K × 18) Flow-through SRAM with NoBL™ Architecture Features Functional Description • No Bus Latency™ (NoBL™) architecture eliminates dead


    Original     		PDF CY7C1355C, CY7C1357C CY7C1355C/CY7C1357C CY7C1355C

    CY7C25442KV18

    Abstract: CY7C25442KV18-300BZI 78 ball fbga thermal resistance 3M Touch Systems
    Text: CY7C25442KV18 72-Mbit QDR II+ SRAM 2-Word Burst Architecture 2.0 Cycle Read Latency with ODT Features • Separate independent read and write data ports ❐ Supports concurrent transactions ■ 333 MHz clock for high bandwidth ■ 2-word burst for reducing address bus frequency


    Original     		PDF CY7C25442KV18 72-Mbit CY7C25442KV18 CY7C25442KV18-300BZI 78 ball fbga thermal resistance 3M Touch Systems

    Untitled

    Abstract: No abstract text available
    Text: CY7C1548KV18/CY7C1550KV18 72-Mbit DDR II+ SRAM Two-Word Burst Architecture 2.0 Cycle Read Latency 72-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) Features Configurations • 72-Mbit density (4 M x 18, 2 M × 36) With Read Cycle Latency of 2.0 cycles:


    Original     		PDF CY7C1548KV18/CY7C1550KV18 72-Mbit 450-MHz CY7C1548KV18 CY7C1550KV18

    CY7C1570KV18

    Abstract: No abstract text available
    Text: CY7C1568KV18/CY7C1570KV18 72-Mbit DDR II+ SRAM Two-Word Burst Architecture 2.5 Cycle Read Latency 72-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) Features Configurations • 72-Mbit density (4 M x 18, 2 M × 36) With Read Cycle Latency of 2.5 cycles:


    Original     		PDF CY7C1568KV18/CY7C1570KV18 72-Mbit CY7C1568KV18 CY7C1570KV18 CY7C1570KV18

    Untitled

    Abstract: No abstract text available
    Text: CY7C1521KV18 72-Mbit DDR II SRAM Four-Word Burst Architecture 72-Mbit DDR II SRAM Four-Word Burst Architecture Features Configurations • 72-Mbit Density 2 M x 36 CY7C1521KV18 – 2 M × 36 ■ 250 MHz Clock for High Bandwidth Functional Description ■


    Original     		PDF CY7C1521KV18 72-Mbit

    da53

    Abstract: HY5R128HC745 HY5R128HC840 HY5R128HC845 HY5R144HC653 HY5R144HC745 HY5R144HC840 HY5R144HC845 HY5R144HM745 HY5R144HM845
    Text: Direct RDRAM 128/144Mbit 256Kx16/18x32s Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and


    Original     		PDF 128/144Mbit 256Kx16/18x32s) 128/144-Mbit 600MHz 800MHz DL0059-00 da53 HY5R128HC745 HY5R128HC840 HY5R128HC845 HY5R144HC653 HY5R144HC745 HY5R144HC840 HY5R144HC845 HY5R144HM745 HY5R144HM845

    direct rdram rambus 1200

    Abstract: No abstract text available
    Text: 800/1066/1200 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high


    Original     		PDF 600MHz DL-0118-07 direct rdram rambus 1200

    hyundai rdram

    Abstract: REF05
    Text: HYRDU64164 / HYRDU72184 Series 64/72Mbit Direct RDRAM • HYUNDAI Advanced Information O verview The Direct Rambus™ DRAM Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and


    OCR Scan     		PDF HYRDU64164 HYRDU72184 64/72Mbit 600MHz 800MHz Mar98 hyundai rdram REF05

    Untitled

    Abstract: No abstract text available
    Text: vivremo VM75720 Y a lE O!££'%• SINGLE CHIP DATA RECOVERY CHANNEL ADVANCE INFORMATION DESCRIPTION FEATURES • • • • • • • • • • • • • Operation Up to 72Mbit/s NRZ Supports 1,7 Code Supports Zoned-Density Recording Operation From a Single 5V Supply


    OCR Scan     		PDF VM75720 72Mbit/s 100-Lead VM75720

    hfdw

    Abstract: No abstract text available
    Text: _ ü 16/18Mbit 2Mx8/9 & 64/72Mbit (8Mx8/9) ConcurrentRDRAM Overview VDD GND BUSDATA[8] GND BUSDATA[7] (NC) BUSENABLE VDD BUSDATA[6] GND BUSDATA[5] VDDA RXCLK GNDA TXCLK VDD BUSDATA[4] GND BUSCTRL SIN VREF SOUT BUSDATA[3] GND BUSDATA[2] (NC)


    OCR Scan     		PDF 16/18Mbit 64/72Mbit 16/18/64/72-M 600MHz hfdw

    RJH 30 E3

    Abstract: RDRAM Clock S5550 HYRDU64164 HYRDU72184 REF05
    Text: » « r u H P f t i • HYRDU64164 / HYRDU72184 SERIES 64/72MBIT DIRECT RDRAMTM > Advanced Information Overview The Direct Rambus DRAM (Direct RDRAM™ is a general purpose high-perform ance m em ory device suitable fo r use in a broad range o f applications


    OCR Scan     		PDF HYRDU64164 HYRDU72184 64/72MBIT RJH 30 E3 RDRAM Clock S5550 REF05

    intel 80196 microcontroller pin diagram

    Abstract: baw 92 FIFO buffer "variable threshold" 256Kbyte-SRAM intel 80196 microcontroller SCSI16 68HC11 BA10 BA11 BA12
    Text: 2 1 3 ^ 3 ^ 0004503 205 S C I R CL-SH5500 'iCIRRUS LOGIC R> P roduct Bulletin FEATURES SCSI Interface • Supports 8- or 16-bit Fast/Wide data bus ■ Fast/Wide DMA/PIO transfers up to 20 Mbytes/ second ■ Supports SCSI-2 Initiator and Target Modes ■ Data Streaming Mode with automatic disconnect


    OCR Scan     		PDF CL-SH5500 16-bit 48-mA intel 80196 microcontroller pin diagram baw 92 FIFO buffer "variable threshold" 256Kbyte-SRAM intel 80196 microcontroller SCSI16 68HC11 BA10 BA11 BA12