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Abstract: No abstract text available
Text: PLESSEY SEMICOND/DISCRETE □3 7 N-channel enhancement mode vertical DMOS FET dF | 722G533 □00b73fl 3 • ?- a s - ZVN3310F A B SO LU T E M AXIM UM R ATIN G S Parameter SO T-23 Symbol Unit V DS 100 V 'd 0.1 A 2 A ±20 V Drain-source voltage Continuous drain current at T A = 2 5 °C
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722G533
00b73fl
ZVN3310F
7520S33
DDb74a
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zvn2110
Abstract: G156 ZVN2110L G158
Text: PLESSEY SEMCOND/MSCRETE 7220533 PLESSEY ìT^ C ON D / DI S C R E T E S E M I C eI 7250533 0DQSt,S3 1 F 9 5D 05653 -o7 N-channel enhancement mode vertical DMOS FET ZVN2110 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown •
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ZVN2110
ZVN2110A*
ZVN2110B*
ZVN2110
G-158
725GS33
G-159
722Q533
G156
ZVN2110L
G158
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g191
Abstract: No abstract text available
Text: PLESSEY SEflICOND/DISCRETE 7220533 PLESSEY SEM ICO ND/DI SCRETE M T | ? 2 a D 5 3 3 DQGSbflS 3 T " 95D 05 6 8 5 D T N-channel enhancement mode vertical DMOS FET - 3 ° l'O J ZVN2220 FEATU RES • Com pact geometry • Fast sw itching speeds • No secondary breakdown
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ZVN2220
ZVN2220B
ZVN2220L
G-190
G-191
722G533
G-192
g191
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