Contextual Info: IDT72261 72271 CMOS SUPERSYNC FIFO 16,384x9, 32,768x9 FEATURES: DESCRIPTION: • • • • • • The IDT72261/72271 are monolithic, CMOS, high capac­ ity, high speed, low power first-in, first-out FIFO memories with clocked read and write controls. These FIFOs are

Contextual Info: 3.3 VOLT CMOS SUPERSYNC FIFO 16,384x9, 32,768x9 IDT72V261 IDT72V271 In teg ra ted D e v ic e T e c h n o lo g y , l i e . FEATURES: • 3.3 Volt operation saves 60 percent of power compared to the functionally compatible 5 Volt IDT72261/72271 family 16,384 x 9-bit storage capacity IDT72V261

IC LM 384 gn

Contextual Info: VARIABLE WIDTH SUPERSYNC FIFO 8,1 9 2 x18 or 16,384x9 16,384x18 or 32,768x9 IDT72264 72274 Integrateci Device Technology, Inc. DESCRIPTION: FEATURES: Select 8,192 x 18 or 16,384 x 9 organization IDT72264 The IDT72264/72274 are monolithic, CMOS, high capac­

2n2222 sot23

Abstract: Z117 Z123 Diode diode z104 a105 transistor Z16 SOT23 2n2222 sot-23 c60 equivalent transistor z5 b49 diode
Contextual Info: P3V VDD VIO VDD P2 P1 NDA # P3V A1 1 VIO VIO 1 B1 TRST# A2 2 TCK A3 3 A4 4 2 B2 TOOL1 3 B3 TMS TDO A5 5 C52 10 16V 2 7227 6 B6 INTA# A7 7 7 B7 X28 A8 8 A9 9 9 B9 10 B10 A11 11 11 B11 A12 12 12 B12 A13 13 13 B13 A14 14 14 B14 GNT# A19 19 19 B19 AD30 AD26 25 B25

Contextual Info: CMOS SUPERSYNC FIFO 65,536 x 9 131,072x9 FEATURES: • Choose among the following memory organizations: IDT72281 65,536 x 9 IDT72291 131,072 x 9 • Pin-compatible with the IDT72261 LA/72271 LA SuperSync FIFOs • 10ns read/write cycle time 6.5ns access time

bluetooth transceiver

Contextual Info: RF2968 Preliminary %/8 7227+70 75$16&(,9(5  7\SLFDO $SSOLFDWLRQV • Bluetooth GSM/GPRS/EDGE Cellular • Cordless Phones Phones • Battery-Powered Portable Devices • Bluetooth Wireless LAN 3URGXFW 'HVFULSWLRQ -A- 4.75 ± 0.10 -B- 4.75 ± 0.10 11° ± 1°

D400F

Abstract: D400FC photodiode ge FGA10 FGA03PT THORLABS FGA10 PDA255 PDA400 Ge detector Thorlabs
Contextual Info: 435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 Ph. 973-579-7227 FAX 973-300-3600 FDG05 Ge Photodiode -Large Active Area -Low Capacitance 0.010 Electrical Characteristics Spectral Response: Active Diameter: Rise/Fall Time RL=50Ω : Cut Off Frequency (50Ω, 3V):

Contextual Info: Ergebnisseite der Teileliste Partlist 09 64 222 7227 Filter D PCB connector < Number of contacts gender Board fixing flange Row pitch Performance level Material filter > Other applications 15 way male connector, straight with clinch nut UNC 4-40 Row separation 2.84 mm

Contextual Info: Ergebnisseite der Teileliste Partlist 09 64 112 7227 Filter D PCB connector < Number of contacts gender Board fixing flange Row pitch Performance level Material filter > Other applications 9 way female connector, straight with clinch nut UNC 4-40 Row separation 2.84 mm

Contextual Info: Ergebnisseite der Teileliste Partlist 09 64 321 7227 Filter D cable connector < Number of contacts gender Termination flange Performance level Material filter > Other applications 25 way male connector Turned solder buckets UNC 4-40 200 mating cycles PCT 470 pF per contact

Contextual Info: Ergebnisseite der Teileliste Partlist 09 64 121 7227 Filter D cable connector < Number of contacts gender Termination flange Performance level Material filter > Other applications 9 way male connector Turned solder buckets UNC 4-40 200 mating cycles PCT 470 pF per contact

Contextual Info: Data Sheet No. PD-9.491C INTERNATIONAL RECTIFIER I R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM350 2N 7227 7227 7227 N-CHANNEL REF: MIL-S-1SSOO/592] 400 Volt, 0.315 Ohm HEXFET Product Summary The HEXFET® technology is the key to International

photodiode

Abstract: 1310nm photodiode photodiode with voltage output 2 Wavelength Laser Diode mitsubishi thyristors diode 366 nm ML725B8F AlGaAs laser diode photodiode dark current THORLABS PHOTODIODE
Contextual Info: 435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 SALES 973-579-7227 FAX 973-300-3600 ML725B8F MITSUBISHI LASER DIODES DESCRIPTION ML725B8F is a AlGaAs laser diode which provides a stable, single transverse mode oscillation with emission wavelength of 1310nm and standard

Contextual Info: CMOS SUPERSYNC FIFO 16,384x9, 32,768x9 IDT72V261 IDT72V271 Integrated D ev ice TechnoJogy, S c . FEATURES: • 3.3 Volt operation saves 60 percent of power compared to the functionally compatible 5 Volt IDT72261/72271 family 16,384 x 9-bit storage capacity IDT72V261

IDT72281

Abstract: IDT72291
Contextual Info: CMOS SuperSync FIFO 65,536 x 9 131,072 x 9 FEATURES: • • • • • • • • • • • • • • • • Choose among the following memory organizations: IDT72281 65,536 x 9 IDT72291 131,072 x 9 Pin-compatible with the IDT72261LA/72271LA SuperSync FIFOs

IDT72281

Abstract: IDT72291
Contextual Info: CMOS SuperSync FIFO 65,536 x 9 131,072 x 9 FEATURES: • • • • • • • • • • • • • • • Choose among the following memory organizations: IDT72281 65,536 x 9 IDT72291 131,072 x 9 Pin-compatible with the IDT72261LA/72271LA SuperSync FIFOs

pj 87 diode

Abstract: diode pj 87 I334 diode I334 660 tg diode iball pj 1339 PJ 63 MM diode 1s500 IRFM350
Contextual Info: Data Sheet No. PD-9.491C INTERNATIONAL RECTIFIER > lIORl REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM350 2N 7227 7227 JANTXV2N7S27 N-CHANNEL REF: MIL-S-19500/59S] Product Summary 400 Volt, 0.315 Ohm HEXFET T h e HEXFE T® technology is the key to International

Contextual Info: CMOS SuperSync FIFO 65,536 x 9 131,072 x 9 • FEATURES: • • • • • • • • • • • • • • • Choose among the following memory organizations: IDT72281 65,536 x 9 IDT72291 131,072 x 9 Pin-compatible with the IDT72261LA/72271LA SuperSync FIFOs

1FW ST

Abstract: j3036
Contextual Info: IDT72261 72271 CMOS SUPERS YN C FIFO 16,384 x 9, 32,768 x 9 FEATURES: DESCRIPTION: • • • • • • The IDT72261/72271 are monolithic, CMOS, high capac­ ity, high speed, low power first-in, first-out FIFO memories with clocked read and write controls. These FIFOs are

ALL DATA SHEET

Abstract: 2003 Optronics JOSEPH LDX Optronics optron
Contextual Info: LDX Optronics Inc. HHL Package Fiber Coupled HHL Package Fiber Coupled 12/15/2003 For Additional Information Contact: 203 Joseph St. O’Fallon, Mo 63366 Phone: 636 272-7227; fax (636) 272-3909 diodes@rpmclasers.com rpmclasers.com 32 Copyright 2003. All rights reserved.

Contextual Info: 7227 S eries □upiin SCSI Straddle Type Material: H o u sing: 30% Gloss filled PBT UL94V-0. C ontacts: Phosphor Bronze. Plating:Gold plated. Electrical Characteristics: Current Rating: 1 AMP. In su la to r Resistance: lOOOMCimin. at DC 500V. C ontact R e sistance: 30mnmax. at DC 100mA.

Contextual Info: 3.3 VOLT CMOS SUPERSYNC FIFO 16,384x9, 32,768x9 IDT72V261 IDT72V271 Ivtegiated D evice Technology, l i e . FEATURES: • 3.3 Volt operation saves 60 percent of power compared to the functionally compatible 5 Volt IDT72261/72271 family 16,384 x 9-bit storage capacity IDT72V261

a5aa

Contextual Info: 3.3 VOLT CMOS SUPERSYNC FIFO 16,384x9, 32,768x9 FEATURES: • 3.3 Volt operation saves 60 percent of power compared to the functionally compatible 5 Volt IDT72261/72271 family IDT72V261 IDT72V271 for exceptionally low power consumption. These FIFOs are

15 GHz power amplifier

Abstract: variable gain amplifier GHz 1K resitor differential operational amplifier LM358 T124001 RF amplifier GHz modulator at 15GHz 15 GHz high power amplifier
Contextual Info: 435 Route 206 • P. O. Box 366 Newton, NJ 07860-0366 SALES 973 579-7227 FAX (973) 300-3600 www.thorlabs.com T124001 – Wideband OC-192 RF Amplifier The 10 Gb/s high-output driver is an ultra wideband RF amplifier designed specifically for driving Lithium-Niobate