VN3012L
Abstract: No abstract text available
Text: VN3012L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) Order No./Package 300V 12Ω 1.8V 0.2A VN3012L TO-92 Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a
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VN3012L
100mA
160mA
TN06D
VN3012L
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RA18H1213G
Abstract: 3218 RF MOSFET MODULE TRANSISTOR 30GHZ RA18H1213G-01 RA18H1213G-E01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA18H1213G 1.24-1.30GHz 18W 12.5V MOBILE RADIO DESCRIPTION The RA18H1213G is a 18-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 1.24- to
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RA18H1213G
30GHz
RA18H1213G
18-watt
30-GHz
3218
RF MOSFET MODULE
TRANSISTOR 30GHZ
RA18H1213G-01
RA18H1213G-E01
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hatfield attenuator
Abstract: RA60H1317M RA60H1317M-01 RA60H1317M-E01 RF MOSFET MODULE low voltage power transistor RF MODULE CIRCUIT DIAGRAM
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M 135-175MHz 60W 12.5V MOBILE RADIO DESCRIPTION The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to
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RA60H1317M
135-175MHz
RA60H1317M
60-watt
175-MHz
hatfield attenuator
RA60H1317M-01
RA60H1317M-E01
RF MOSFET MODULE
low voltage power transistor
RF MODULE CIRCUIT DIAGRAM
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hatfield attenuator
Abstract: RA30H4045MR-01 RA30H4045MR RF MOSFET MODULE RA30H4045MR-E01 50 watt transistor amplifier 6.1 circuit diagram RF MODULE CIRCUIT DIAGRAM
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4045MR 400-450MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H4045MR is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
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RA30H4045MR
400-450MHz
RA30H4045MR
30-watt
450-MHz
hatfield attenuator
RA30H4045MR-01
RF MOSFET MODULE
RA30H4045MR-E01
50 watt transistor amplifier 6.1 circuit diagram
RF MODULE CIRCUIT DIAGRAM
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RA30H0608M-01
Abstract: RA30H0608M-E01 hatfield attenuator RA30H0608M 7212 transistor RF MOSFET MODULE 50 watt transistor amplifier 6.1 circuit diagram
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H0608M 68-88MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H0608M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 68- to 88-MHz range.
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RA30H0608M
68-88MHz
RA30H0608M
30-watt
88-MHz
RA30H0608M-01
RA30H0608M-E01
hatfield attenuator
7212 transistor
RF MOSFET MODULE
50 watt transistor amplifier 6.1 circuit diagram
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mosfet amplifier
Abstract: RA08H1317M RA08H1317M-01 RA08H1317M-E01
Text: MITSUBISHI RF MOSFET MODULE RA08H1317M ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 135-175MHz 8W 12.5V PORTABLE/MOBILE RADIO DESCRIPTION The RA08H1317M is a 8-watt RF MOSFET Amplifier Module for 12.5-volt portable/ mobile radios that operate in the 135- to
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RA08H1317M
135-175MHz
RA08H1317M
175-MHz
mosfet amplifier
RA08H1317M-01
RA08H1317M-E01
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hatfield attenuator
Abstract: RF MOSFET MODULE RA60H1317M RA60H1317M-01 RA60H1317M-E01 600 Watt Mosfet Power Amplifier
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M 135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to
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RA60H1317M
135-175MHz
RA60H1317M
60-watt
175-MHz
hatfield attenuator
RF MOSFET MODULE
RA60H1317M-01
RA60H1317M-E01
600 Watt Mosfet Power Amplifier
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RA07N4452M
Abstract: RA07N4452M-01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N4452M 440-520MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N4452M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 440- to
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RA07N4452M
440-520MHz
RA07N4452M
520-MHz
RA07N4452M-01
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RA03M8087M
Abstract: RA03M8087M-01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8087M 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 806- to
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RA03M8087M
806-870MHz
RA03M8087M
870-MHz
RA03M8087M-01
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RA30H1317M
Abstract: No abstract text available
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H1317M 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to
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RA30H1317M
135-175MHz
RA30H1317M
30-watt
175-MHz
beco1-55685-739
I-20041
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H11S
Abstract: RA06H8285M RA06H8285M-01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA06H8285M 820-851MHz 6W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA06H8285MB is a 6-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 820- to
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RA06H8285M
820-851MHz
RA06H8285MB
851-MHz
H11S
RA06H8285M
RA06H8285M-01
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RA07N3340M
Abstract: RA07N3340M-01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N3340M 330-400MHz 7.5W 9.6V 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N3340M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 330- to
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RA07N3340M
330-400MHz
RA07N3340M
400-MHz
RA07N3340M-01
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RA35H1516M
Abstract: RA35H1516M-101
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to
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RA35H1516M
154-162MHz
RA35H1516M
40-watt
162-MHz
RA35H1516M-101
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RA30H4047M
Abstract: RA30H4047M-E01 RA30H4047M-01 30H4047M
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M 400-470MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
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RA30H4047M
400-470MHz
RA30H4047M
30-watt
470-MHz
RA30H4047M-E01
RA30H4047M-01
30H4047M
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DF412
Abstract: 7211IPL L39C 9424a
Text: ICM 7211/12 ICM 7211/12 HARRIS S E M I C O N D U C T O R 4-D igit LCD /LED Display Driver GEN ERAL DESCRIPTION ICM7211 LCD FEATURES T h e ICM7211 (LCD) and ICM 7212 (LED ) d e v ice s co n s ti tute a fam ily of non-m ultiplexed four-digit seve n-segm ent
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ICM7211
ICM7211
ICM7211M
ICM7211A
DF412
7211IPL
L39C
9424a
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icm7219
Abstract: ICL7103 8755 interfacing chip ICM7211 ICM7212 8755 microprocessor circuit diagram bcd to seven segment circuit diagram 7212AM DF411 ICM7226
Text: O m ^ O IL IC M 7 2 1 1 LCD IC M 7 2 1 2 (LED ) Four Digit CMOS Display Decoder/Drivers ICM7211 (LC D ) FEATURES DESCRIPTIO N • Four digit non-multlplexed 7 segment LCD display oututs with backplane driver • Complete onboard RC oscillator to generate back
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ICM7211
ICM7212
ICM7211
DF411)
ICM7211M
ICM7211A
13AD1
16AD4
icm7219
ICL7103
8755 interfacing chip
ICM7212
8755 microprocessor circuit diagram
bcd to seven segment circuit diagram
7212AM
DF411
ICM7226
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pm7102
Abstract: PM7202 PM7222 valor pm7102 PM7203 valor pm
Text: Ethernet Ethernet DC/DC Converters S c h e m a tic D ra w in g s 9V out P in 2 2 -P M 7 2 2 X A c tiv e H I E n a b le P in 3 -P M 7 2 1 X A c tiv e L O E n a b le Electrical S p e c ific a tio n s Input Specifications Parameter Input Voltage-Range
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PM7212/14
PM7222/24
PM7203/05
PM7213/1S
PM7223/2S
9213M642
E/DC101-00/111095
pm7102
PM7202
PM7222
valor pm7102
PM7203
valor pm
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Untitled
Abstract: No abstract text available
Text: Supertex inc. vn3012l N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVD$s/ BVdgS R dS ON (max) VgS(Bi) (max) ' d(ON) (min) Order NoJPackage 300V 12Q 1.8V 0.2A VN3012L TO-92 Features Advanced DMOS Technology □ Free from secondary breakdown
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VN3012L
100mA
160mA
300ns
TN06D
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VN3012L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON ^G S (th ) I d (ON) Order No./Package b v dgs (max) (max) (min) TO-92 300V 12£2 1.8V 0.2A VN3012L Features Advanced DMOS Technology □ Free from secondary breakdown
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VN3012L
100mA
160rnA
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DF411
Abstract: ICM7212 ICM7211 DB012 ICM7211AMIPL ICM7211-ICM7212 4 digit MULTIPLEXED 7 segment display
Text: fflîS S H B IC M 7 2 1 1, IC M 7 2 1 2 4-Digit ICM7211 LCD and ICM7212 (LED) Display Drive December 1993 Features ICM7211 (LCD) Description • Four Digit Non-Mult!ptexed 7 Sagmerit LCD Display Outputs With Backplane Driver The ICM7211 (LCD) and ICM7212 (LED) devices constitute
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ICM7211
ICM7212
ICM7211
ICM7212
ICM7211,
ICM7211M
P1027
DF411
DB012
ICM7211AMIPL
ICM7211-ICM7212
4 digit MULTIPLEXED 7 segment display
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ICM7211AIM44
Abstract: ICM7211 ICM7211-ICM7212 DF411 ICM7212AMIPL ICM7226 pinout 3 digit 7 segment LCD ICM7211AMIPL p1027 ICM7211AIM
Text: S e m iconductor IC M 7 2 1 1 , IC M 7 2 1 2 4-Digit, ICM7211 LCD and ICM7212 (LED) Display Drivers August 1997 Features ICM7211 (LCD) Description • Four Digit Non-Multiplexed 7 Segment LCD Display Outputs with Backplane Driver The ICM7211 (LCD) and ICM7212 (LED) devices constitute
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ICM7211,
ICM7212
ICM7211
ICM7211
DF411)
ICM7211M
ICM7211A
ICM7211AIM44
ICM7211-ICM7212
DF411
ICM7212AMIPL
ICM7226
pinout 3 digit 7 segment LCD
ICM7211AMIPL
p1027
ICM7211AIM
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d lt 7210
Abstract: IC ULN2803 lt 7210 LT 7210 transistor uln2803 driver ULN2803 application ULN2803 ULN2802 ULN2801 OF ULN2803
Text: MOTOROLA SC {TELECOM} 01 5367253 MOTOROLA SC D | t,3b?5S3 0 07 ^77 5 1 'J~ 01E 79772 CTELECOM ' D 7 ^ ^ 3 '2 r ULN2801 ULN2802 ULN2803 ULN2804 M O T O R O L A OCTAL HIGH VOLTAGE, HIGH CURRENT DARLINGTON TRANSISTOR ARRAYS OCTAL PERIPHERAL D R IVER A R R A YS
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ULN2801
ULN2802
ULN2803
ULN2804
ULN2801,
ULN2802,
ULN2803,
d lt 7210
IC ULN2803
lt 7210
LT 7210 transistor
uln2803 driver
ULN2803 application
OF ULN2803
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TRANSISTOR C 3205
Abstract: LAS5205 LT 5212 LAS 5215 Data LAS2212 voltage regulator 120 volt input 24 volt output 3205 transistor LAS 2112 LAS 5205 LT 7224
Text: POWER HYBRID VOLTAGE REGULATOR-LAS 2100-7000 SERIES MAXIMUM RATINGS input Voltage Max i:i LAS 2200 Series 47 w atts at 100°C(;ASE LAS 3000 Series VlN Power Dissipation LAS 7000 LAS 5000 LAS 3000 LAS 2100 (4 pin) Fixed output LAS 2200 (14 pin) Adjustable output
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102mm
TRANSISTOR C 3205
LAS5205
LT 5212
LAS 5215 Data
LAS2212
voltage regulator 120 volt input 24 volt output
3205 transistor
LAS 2112
LAS 5205
LT 7224
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74LS186
Abstract: SN74LS165 54ls166 IC 74165 transistor c 9012 74165 block diagram Transistor 9012 ax
Text: TTL MSI TYPES SN5416S, SN54LS165, SN74165, SN74LS165 PARALLEL-LOAD 8-BIT SHIFT RE6ISTERS B U L L E T I N N O . D L-S 761 13 76 , O C T O B E R 1976 SN 5 4 1 6 6 , S N 5 4 L S 1 6 6 . . . J O R W P A C K A G E SN 7 41 65 , S N 7 4 L S 1 6 5 . . . J O R N P A C K A G E
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SN5416S,
SN54LS165,
SN74165,
SN74LS165
LS165
SN54165,
SNS4LSI85,
SN74165
74LS186
54ls166
IC 74165
transistor c 9012
74165 block diagram
Transistor 9012 ax
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