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    7212 TRANSISTOR Search Results

    7212 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    7212 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VN3012L

    Abstract: No abstract text available
    Text: VN3012L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) Order No./Package 300V 12Ω 1.8V 0.2A VN3012L TO-92 Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a


    Original     		PDF VN3012L 100mA 160mA TN06D VN3012L

    RA18H1213G

    Abstract: 3218 RF MOSFET MODULE TRANSISTOR 30GHZ RA18H1213G-01 RA18H1213G-E01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA18H1213G 1.24-1.30GHz 18W 12.5V MOBILE RADIO DESCRIPTION The RA18H1213G is a 18-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 1.24- to


    Original     		PDF RA18H1213G 30GHz RA18H1213G 18-watt 30-GHz 3218 RF MOSFET MODULE TRANSISTOR 30GHZ RA18H1213G-01 RA18H1213G-E01

    hatfield attenuator

    Abstract: RA60H1317M RA60H1317M-01 RA60H1317M-E01 RF MOSFET MODULE low voltage power transistor RF MODULE CIRCUIT DIAGRAM
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M 135-175MHz 60W 12.5V MOBILE RADIO DESCRIPTION The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to


    Original     		PDF RA60H1317M 135-175MHz RA60H1317M 60-watt 175-MHz hatfield attenuator RA60H1317M-01 RA60H1317M-E01 RF MOSFET MODULE low voltage power transistor RF MODULE CIRCUIT DIAGRAM

    hatfield attenuator

    Abstract: RA30H4045MR-01 RA30H4045MR RF MOSFET MODULE RA30H4045MR-E01 50 watt transistor amplifier 6.1 circuit diagram RF MODULE CIRCUIT DIAGRAM
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4045MR 400-450MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H4045MR is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original     		PDF RA30H4045MR 400-450MHz RA30H4045MR 30-watt 450-MHz hatfield attenuator RA30H4045MR-01 RF MOSFET MODULE RA30H4045MR-E01 50 watt transistor amplifier 6.1 circuit diagram RF MODULE CIRCUIT DIAGRAM

    RA30H0608M-01

    Abstract: RA30H0608M-E01 hatfield attenuator RA30H0608M 7212 transistor RF MOSFET MODULE 50 watt transistor amplifier 6.1 circuit diagram
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H0608M 68-88MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H0608M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 68- to 88-MHz range.


    Original     		PDF RA30H0608M 68-88MHz RA30H0608M 30-watt 88-MHz RA30H0608M-01 RA30H0608M-E01 hatfield attenuator 7212 transistor RF MOSFET MODULE 50 watt transistor amplifier 6.1 circuit diagram

    mosfet amplifier

    Abstract: RA08H1317M RA08H1317M-01 RA08H1317M-E01
    Text: MITSUBISHI RF MOSFET MODULE RA08H1317M ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 135-175MHz 8W 12.5V PORTABLE/MOBILE RADIO DESCRIPTION The RA08H1317M is a 8-watt RF MOSFET Amplifier Module for 12.5-volt portable/ mobile radios that operate in the 135- to


    Original     		PDF RA08H1317M 135-175MHz RA08H1317M 175-MHz mosfet amplifier RA08H1317M-01 RA08H1317M-E01

    hatfield attenuator

    Abstract: RF MOSFET MODULE RA60H1317M RA60H1317M-01 RA60H1317M-E01 600 Watt Mosfet Power Amplifier
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M 135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to


    Original     		PDF RA60H1317M 135-175MHz RA60H1317M 60-watt 175-MHz hatfield attenuator RF MOSFET MODULE RA60H1317M-01 RA60H1317M-E01 600 Watt Mosfet Power Amplifier

    RA07N4452M

    Abstract: RA07N4452M-01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N4452M 440-520MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N4452M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 440- to


    Original     		PDF RA07N4452M 440-520MHz RA07N4452M 520-MHz RA07N4452M-01

    RA03M8087M

    Abstract: RA03M8087M-01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8087M 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 806- to


    Original     		PDF RA03M8087M 806-870MHz RA03M8087M 870-MHz RA03M8087M-01

    RA30H1317M

    Abstract: No abstract text available
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H1317M 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to


    Original     		PDF RA30H1317M 135-175MHz RA30H1317M 30-watt 175-MHz beco1-55685-739 I-20041

    H11S

    Abstract: RA06H8285M RA06H8285M-01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA06H8285M 820-851MHz 6W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA06H8285MB is a 6-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 820- to


    Original     		PDF RA06H8285M 820-851MHz RA06H8285MB 851-MHz H11S RA06H8285M RA06H8285M-01

    RA07N3340M

    Abstract: RA07N3340M-01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N3340M 330-400MHz 7.5W 9.6V 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N3340M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 330- to


    Original     		PDF RA07N3340M 330-400MHz RA07N3340M 400-MHz RA07N3340M-01

    RA35H1516M

    Abstract: RA35H1516M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA35H1516M RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to


    Original     		PDF RA35H1516M 154-162MHz RA35H1516M 40-watt 162-MHz RA35H1516M-101

    RA30H4047M

    Abstract: RA30H4047M-E01 RA30H4047M-01 30H4047M
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M 400-470MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original     		PDF RA30H4047M 400-470MHz RA30H4047M 30-watt 470-MHz RA30H4047M-E01 RA30H4047M-01 30H4047M

    DF412

    Abstract: 7211IPL L39C 9424a
    Text: ICM 7211/12 ICM 7211/12 HARRIS S E M I C O N D U C T O R 4-D igit LCD /LED Display Driver GEN ERAL DESCRIPTION ICM7211 LCD FEATURES T h e ICM7211 (LCD) and ICM 7212 (LED ) d e v ice s co n s ti­ tute a fam ily of non-m ultiplexed four-digit seve n-segm ent


    OCR Scan     		PDF ICM7211 ICM7211 ICM7211M ICM7211A DF412 7211IPL L39C 9424a

    icm7219

    Abstract: ICL7103 8755 interfacing chip ICM7211 ICM7212 8755 microprocessor circuit diagram bcd to seven segment circuit diagram 7212AM DF411 ICM7226
    Text: O m ^ O IL IC M 7 2 1 1 LCD IC M 7 2 1 2 (LED ) Four Digit CMOS Display Decoder/Drivers ICM7211 (LC D ) FEATURES DESCRIPTIO N • Four digit non-multlplexed 7 segment LCD display oututs with backplane driver • Complete onboard RC oscillator to generate back­


    OCR Scan     		PDF ICM7211 ICM7212 ICM7211 DF411) ICM7211M ICM7211A 13AD1 16AD4 icm7219 ICL7103 8755 interfacing chip ICM7212 8755 microprocessor circuit diagram bcd to seven segment circuit diagram 7212AM DF411 ICM7226

    pm7102

    Abstract: PM7202 PM7222 valor pm7102 PM7203 valor pm
    Text: Ethernet Ethernet DC/DC Converters S c h e m a tic D ra w in g s 9V out P in 2 2 -P M 7 2 2 X A c tiv e H I E n a b le P in 3 -P M 7 2 1 X A c tiv e L O E n a b le Electrical S p e c ific a tio n s Input Specifications Parameter Input Voltage-Range


    OCR Scan     		PDF PM7212/14 PM7222/24 PM7203/05 PM7213/1S PM7223/2S 9213M642 E/DC101-00/111095 pm7102 PM7202 PM7222 valor pm7102 PM7203 valor pm

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. vn3012l N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVD$s/ BVdgS R dS ON (max) VgS(Bi) (max) ' d(ON) (min) Order NoJPackage 300V 12Q 1.8V 0.2A VN3012L TO-92 Features Advanced DMOS Technology □ Free from secondary breakdown


    OCR Scan     		PDF VN3012L 100mA 160mA 300ns TN06D

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. VN3012L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON ^G S (th ) I d (ON) Order No./Package b v dgs (max) (max) (min) TO-92 300V 12£2 1.8V 0.2A VN3012L Features Advanced DMOS Technology □ Free from secondary breakdown


    OCR Scan     		PDF VN3012L 100mA 160rnA

    DF411

    Abstract: ICM7212 ICM7211 DB012 ICM7211AMIPL ICM7211-ICM7212 4 digit MULTIPLEXED 7 segment display
    Text: fflîS S H B IC M 7 2 1 1, IC M 7 2 1 2 4-Digit ICM7211 LCD and ICM7212 (LED) Display Drive December 1993 Features ICM7211 (LCD) Description • Four Digit Non-Mult!ptexed 7 Sagmerit LCD Display Outputs With Backplane Driver The ICM7211 (LCD) and ICM7212 (LED) devices constitute


    OCR Scan     		PDF ICM7211 ICM7212 ICM7211 ICM7212 ICM7211, ICM7211M P1027 DF411 DB012 ICM7211AMIPL ICM7211-ICM7212 4 digit MULTIPLEXED 7 segment display

    ICM7211AIM44

    Abstract: ICM7211 ICM7211-ICM7212 DF411 ICM7212AMIPL ICM7226 pinout 3 digit 7 segment LCD ICM7211AMIPL p1027 ICM7211AIM
    Text: S e m iconductor IC M 7 2 1 1 , IC M 7 2 1 2 4-Digit, ICM7211 LCD and ICM7212 (LED) Display Drivers August 1997 Features ICM7211 (LCD) Description • Four Digit Non-Multiplexed 7 Segment LCD Display Outputs with Backplane Driver The ICM7211 (LCD) and ICM7212 (LED) devices constitute


    OCR Scan     		PDF ICM7211, ICM7212 ICM7211 ICM7211 DF411) ICM7211M ICM7211A ICM7211AIM44 ICM7211-ICM7212 DF411 ICM7212AMIPL ICM7226 pinout 3 digit 7 segment LCD ICM7211AMIPL p1027 ICM7211AIM

    d lt 7210

    Abstract: IC ULN2803 lt 7210 LT 7210 transistor uln2803 driver ULN2803 application ULN2803 ULN2802 ULN2801 OF ULN2803
    Text: MOTOROLA SC {TELECOM} 01 5367253 MOTOROLA SC D | t,3b?5S3 0 07 ^77 5 1 'J~ 01E 79772 CTELECOM ' D 7 ^ ^ 3 '2 r ULN2801 ULN2802 ULN2803 ULN2804 M O T O R O L A OCTAL HIGH VOLTAGE, HIGH CURRENT DARLINGTON TRANSISTOR ARRAYS OCTAL PERIPHERAL D R IVER A R R A YS


    OCR Scan     		PDF ULN2801 ULN2802 ULN2803 ULN2804 ULN2801, ULN2802, ULN2803, d lt 7210 IC ULN2803 lt 7210 LT 7210 transistor uln2803 driver ULN2803 application OF ULN2803

    TRANSISTOR C 3205

    Abstract: LAS5205 LT 5212 LAS 5215 Data LAS2212 voltage regulator 120 volt input 24 volt output 3205 transistor LAS 2112 LAS 5205 LT 7224
    Text: POWER HYBRID VOLTAGE REGULATOR-LAS 2100-7000 SERIES MAXIMUM RATINGS input Voltage Max i:i LAS 2200 Series 47 w atts at 100°C(;ASE LAS 3000 Series VlN Power Dissipation LAS 7000 LAS 5000 LAS 3000 LAS 2100 (4 pin) Fixed output LAS 2200 (14 pin) Adjustable output


    OCR Scan     		PDF 102mm TRANSISTOR C 3205 LAS5205 LT 5212 LAS 5215 Data LAS2212 voltage regulator 120 volt input 24 volt output 3205 transistor LAS 2112 LAS 5205 LT 7224

    74LS186

    Abstract: SN74LS165 54ls166 IC 74165 transistor c 9012 74165 block diagram Transistor 9012 ax
    Text: TTL MSI TYPES SN5416S, SN54LS165, SN74165, SN74LS165 PARALLEL-LOAD 8-BIT SHIFT RE6ISTERS B U L L E T I N N O . D L-S 761 13 76 , O C T O B E R 1976 SN 5 4 1 6 6 , S N 5 4 L S 1 6 6 . . . J O R W P A C K A G E SN 7 41 65 , S N 7 4 L S 1 6 5 . . . J O R N P A C K A G E


    OCR Scan     		PDF SN5416S, SN54LS165, SN74165, SN74LS165 LS165 SN54165, SNS4LSI85, SN74165 74LS186 54ls166 IC 74165 transistor c 9012 74165 block diagram Transistor 9012 ax