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    Untitled

    Abstract: No abstract text available
    Text: Advanced Power MOSFET S F W /I9 6 3 0 FEATURES B V dss = -2 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology RüS on = 0 -8 ß ■ Lower Input Capacitance lD = -6 .5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |iA (Max.) @ VOS-2 0 0 V


    OCR Scan     		PDF SFW/I9630 0D4Q11Q ib4142

    KM4216C258

    Abstract: No abstract text available
    Text: KM4216C/V258 CMOS VIDEO RAM 256K X 16 Bit CMOS Video RAM FEATURES The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port


    OCR Scan     		PDF KM4216C 512x16 110ns 130ns 150ns KM4216C258 120mA 110mA 100mA KM4216V258