SA70
Abstract: 2SA31
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50212-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 • FEATURES
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DS05-50212-3E
MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90
MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90
71-ball
F0111
SA70
2SA31
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SN4 357
Abstract: sn7 357
Text: Aug. 2006 Cover Page HYS72T512422HFN–[3S/3.7]–A Internet Data Sheet Rev. 1.10 Internet Data Sheet HYS72T512422HFN–[3S/3.7]–A Revision History Revision History: Rev. 1.10, 2006-08-16 All Adapted internet edition All Converted Data Sheet with new template.
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HYS72T512422HFN
SN4 357
sn7 357
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SA70
Abstract: 22a17
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50207-4E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 8M (× 8/×16) STATIC RAM MB84VD2228XEA/EE-85 MB84VD2229XEA/EE-85 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V
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DS05-50207-4E
MB84VD2228XEA/EE-85
MB84VD2229XEA/EE-85
71-ball
SA70
22a17
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SA70
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE2E_W Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84LD22382EF/LD22383EF/LD22384EF-12 MB84LD22392EF/LD22393EF/LD22394EF-12 • FEATURES • Power supply voltage of 2.3 to 2.7 V for FCRAM
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MB84LD22382EF/LD22383EF/LD22384EF-12
MB84LD22392EF/LD22393EF/LD22394EF-12
71-ball
F0006
SA70
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SA70
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.1E_w Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EF/VD22387EF/VD22388EF-90 MB84VD22396EF/VD22397EF/VD22398EF-90 • FEATURES • Power supply voltage of 2.7 to 3.0V for FCRAM
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MB84VD22386EF/VD22387EF/VD22388EF-90
MB84VD22396EF/VD22397EF/VD22398EF-90
71-ball
F0006
SA70
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11431-2E MEMORY Mobile FCRAMTM CMOS 64M Bit 4 M word x 16 bit Mobile Phone Application Specific Memory MB82DP04183C-65L • DESCRIPTION The FUJITSU MB82DP04183C is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous
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DS05-11431-2E
MB82DP04183C-65L
MB82DP04183C
16-bit
F0603
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50212-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 • FEATURES
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DS05-50212-3E
MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90
MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90
71-ball
F0111
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Untitled
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-11460-1E MEMORY Mobile FCRAMTM CMOS 32 M Bit 2 M word x 16 bit Mobile Phone Application Specific Memory MB82DP02183F-65L • DESCRIPTION The MB82DP02183F is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous Static
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DS05-11460-1E
MB82DP02183F-65L
MB82DP02183F
16-bit
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Untitled
Abstract: No abstract text available
Text: Internet Data Sheet, Rev. 1.00, Apr. 2006 Cover Page HYS72T512422HFN–3.7–A 240-Pin F ully-Buffered DDR2 SDRAM Modules DDR2 SDRAM FB-DIMM SDRAM RoHS Compliant Products Green Product High-Speed Differential Point-to-Point Link Interface at 1.5 V Memory Products
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HYS72T512422HFNâ
240-Pin
DDR2-800
DDR2-667
DDR2-533
DDR2-400
03292006-QQ89-IKE4
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nanya 8gb DDR3
Abstract: nanya 4gb DDR3 SODIMM DDR3 DIMM 16H16 DDR3 rDIMM SODIMM ddr2 8gb TSOPII inphi PC3-12800 SSTL-15
Text: NANYA Module Part Numbering Guide NT 4GT T 64 U 8 H NANYA Technology Module Density Product Family T=DDR2 SDRAM Data Width 64=x64 U N AC Speed 256=256MB 512=512MB 1G=1GB 2G=2GB 4G=4GB 8G=8GB 16T=16GB Stacking 32T=32GB (Stacking) D=DDR SDRAM C=DDR3 SDRAM
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256MB
512MB
SSTL-18
SSTL-15
SSTL-13
PC2-3200-3-3-3
PC2-4200-4-4-4
PC2-5300-5-5-5
PC2-6400-5-5-5
PC2-6400-6-6-6
nanya 8gb DDR3
nanya 4gb DDR3 SODIMM
DDR3 DIMM
16H16
DDR3 rDIMM
SODIMM ddr2 8gb
TSOPII
inphi
PC3-12800
SSTL-15
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SA70
Abstract: SA4664
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50303-1E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32 M (x ×16) FLASH MEMORY & 16 M (× ×16) Mobile FCRAMTM MB84VD22386EF/VD22387EF/VD22388EF-85 MB84VD22396EF/VD22397EF/VD22398EF-85 • FEATURES • Power Supply Voltage of 2.7 to 3.0 V for FCRAM
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DS05-50303-1E
MB84VD22386EF/VD22387EF/VD22388EF-85
MB84VD22396EF/VD22397EF/VD22398EF-85
SA70
SA4664
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Untitled
Abstract: No abstract text available
Text: HY5PS2G431M[P] HY5PS2G831M[P] 2Gb DDR2 SDRAM DDP HY5PS2G431M[P] HY5PS2G831M[P] This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5PS2G431M
HY5PS2G831M
1HY5PS2G431M
1HY5PS2G831M
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PC2-6400
Abstract: No abstract text available
Text: NT2GTT64U88B0UN / NT2GTT64U88B0RN 2GB : 256M x 64 PC2-4200/PC2-5300/PC26400 Unbuffered DDR2 SO-DIMM 200 pin Unbuffered DDR2 SO-DIMM Based on 2x128Mx8 Stacking DDR2 SDRAM Features • 200-Pin Small Outline Dual In-Line Memory Module (SO-DIMM) • 256Mx64 Unbuffered DDR2 SO-DIMM based on 2 ranks of
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NT2GTT64U88B0UN
NT2GTT64U88B0RN
PC2-4200/PC2-5300/PC26400
2x128Mx8
200-Pin
256Mx64
128Mx8
PC2-4200
PC2-5300
PC2-6400
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MB82DP04184E-65L
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11447-1E MEMORY Mobile FCRAMTM CMOS 64M Bit 4 M word x 16 bit Mobile Phone Application Specific Memory MB82DP04184E-65L • DESCRIPTION The Fujitsu MB82DP04184E is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous
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DS05-11447-1E
MB82DP04184E-65L
MB82DP04184E
16-bit
F0709
MB82DP04184E-65L
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JESD51-2
Abstract: DDR2-533 DDR2-667 AL-200
Text: HY5PS2G431M[P] HY5PS2G431M[P] 2Gb DDR2 SDRAM DDP HY5PS2G431M[P] HY5PS2G831M[P] This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5PS2G431M
HY5PS2G831M
1HY5PS2G431M
JESD51-2
DDR2-533
DDR2-667
AL-200
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JESD51-2
Abstract: No abstract text available
Text: HY5PS2G431AMP HY5PS2G831AMP 2Gb DDR2 SDRAM DDP HY5PS2G431AMP HY5PS2G831AMP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5PS2G431AMP
HY5PS2G831AMP
1HY5PS2G431AMP
1HY5PS2G831AMP
JESD51-2
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HY5PS2g
Abstract: JESD51-2
Text: HY5PS2G431AMP HY5PS2G831AMP 2Gb DDR2 SDRAM DDP HY5PS2G431AMP HY5PS2G831AMP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5PS2G431AMP
HY5PS2G831AMP
1HY5PS2G431AMP
1HY5PS2G831AMP
HY5PS2g
JESD51-2
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Untitled
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-11449-2E MEMORY Mobile FCRAMTM CMOS 32 M Bit 2 M word x 16 bit Mobile Phone Application Specific Memory MB82DP02183E-65L • DESCRIPTION The MB82DP02183E is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous Static
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DS05-11449-2E
MB82DP02183E-65L
MB82DP02183E
16-bit
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Untitled
Abstract: No abstract text available
Text: Aug. 2006 Cover Page HYS72T 512022 H FD– 3 . 7 – A Internet Data Sheet Rev. 1.10 Internet Data Sheet HYS72T512022HFD–3.7–A Revision History Revision History: Rev. 1.10, 2006-08-17 All Adapted internet edition All Converted Data Sheet with new template.
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HYS72T
HYS72T512022HFDâ
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11437-1E MEMORY Mobile FCRAMTM CMOS 32 M Bit 2 M wordx16 bit Mobile Phone Application Specific Memory MB82DBS02163D-70L • DESCRIPTION The FUJITSU MB82DBS02163D is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous
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DS05-11437-1E
MB82DBS02163D-70L
MB82DBS02163D
16-bit
F0604
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Untitled
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-11447-2Ea MEMORY Mobile FCRAMTM CMOS 64M Bit 4 M word x 16 bit Mobile Phone Application Specific Memory MB82DP04184E-65L • DESCRIPTION The Fujitsu Microelectronics MB82DP04184E is a CMOS Fast Cycle Random Access Memory (FCRAM*) with
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DS05-11447-2Ea
MB82DP04184E-65L
MB82DP04184E
16-bit
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amb qimonda
Abstract: DDR2 2gbit hyb18t2g402af DDR2-533 qimonda ddr2 5121G
Text: November 2006 Cover Page HYS72T512[0/1]22HFN–3.7–A 240-Pin Fully-Buffered DDR2 SDRAM Modules DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.1 Internet Data Sheet HYS72T512[0/1]22HFN–3.7–A Revision History Revision History: 2006-11-13, Rev. 1.1
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HYS72T512
22HFN
240-Pin
amb qimonda
DDR2 2gbit
hyb18t2g402af
DDR2-533
qimonda ddr2
5121G
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Untitled
Abstract: No abstract text available
Text: December 2006 Cover Page HYS72T 512022 H FD– 3 . 7 – A 240-Pin Fully-Buffered DDR2 SDRAM Modules DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.2 Internet Data Sheet HYS72T512022HFD–3.7–A 240-Pin Fully-Buffered DDR2 SDRAM Modules Revision History
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HYS72T
240-Pin
HYS72T512022HFD
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SA70
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50207-3E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 8M (× 8/×16) STATIC RAM MB84VD2228XEA-85/90/MB84VD2229XEA-85/90 MB84VD2228XEE-85/90/MB84VD2229XEE-85/90 • FEATURES • Power supply voltage of 2.7 V to 3.3 V
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DS05-50207-3E
MB84VD2228XEA-85/90/MB84VD2229XEA-85/90
MB84VD2228XEE-85/90/MB84VD2229XEE-85/90
ns/90
71-ball
SA70
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