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Abstract: No abstract text available
Text: KM4 I C I 6000B S CMOS DRAM ELECTRONICS 16M x 1 Bit CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
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6000B
16Mx1
KM41C16000BS
0G34Q05
71b4142
0034QGfc>
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ic KA7812
Abstract: sheet ka7812 DD35AL KA7810 ka7805 samsung KA7824 SAMSUNG IC. KA7812 Ka7805 diagram KA7810A WV KA7815
Text: KA78XX ELECTRONICS Industria] 3-TERM INAL 1A POSITIVE VOLTAGE REGULATORS The KA78XX series of three-terminal positive regulators are available in the T 0-220 package and with several fixed output voltages, making them useful in a wide range of applications. Each type employs internal current
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KA78XX
KA78XX
7Tb414a
0032flfl4
ic KA7812
sheet ka7812
DD35AL
KA7810
ka7805 samsung
KA7824 SAMSUNG
IC. KA7812
Ka7805 diagram
KA7810A WV
KA7815
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C254D
Abstract: cmos dram NCC KMQ
Text: KM416V254DJ ELECTRONICS CMOS D R A M 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,
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V254DJ
256Kx16
OT7T2733T
KM416V254DJ
003242b
C254D
cmos dram
NCC KMQ
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SAMSUNG osd application note
Abstract: Hsync Vsync convert pwm circuits ks88 c 3116 KS88C3216 KS88C3208 KS88C321
Text: KS88C3208 Microcontroller DESCRIPTION The K S 88C 3208 and K S 88C 3216 single-chip C M O S microcontrollers are designed for C T V and related screen display applications. The main peripherals include digital I/O modules, O SD , P W M with data capture, an l2C-bus
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KS88C3208
KS88C3208
KS88C3216
KS88C3208)
16-Kbyte
KS88C3216)
272-byte
71ti4mE
0Q32534
SAMSUNG osd application note
Hsync Vsync convert
pwm circuits
ks88 c 3116
KS88C321
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IRFP350
Abstract: diode sv 03 ADE 352 TI414 diode sv 03 56 IRFP250 IRFP251 IRFP252 IRFP253 IRFP351
Text: 7964142 SAMSUNG SEMICONDUCTOR 98D 0 5 2 0 4 INC N-CHANNEL T POWER MOSFETS IRFP350/351/352/353 Tfl Im F % 41 4 E □ 0□ S E □ 4 fi f FEATURES Low Ros<on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low input capacitance
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IRFP350/351/352/353
IRFP250
IRFP251
IRFP252
IRFP253
IRFP350
IRFP351
IRFP353
ds-80
/bs-20
diode sv 03
ADE 352
TI414
diode sv 03 56
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