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    716 TRANSISTOR Search Results

    716 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    716 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    727 diode

    Abstract: 716 transistor diode 716 BFY 34 transistor
    Text: GaAs Components HiRel Discretes and Microwave Semiconductors 11 HiRel Discretes and Microwave Semiconductors Table of Contents Title Component Types Package Types Page 11.1 Preliminary Remarks 716 11.2 Introduction to HiRel and Space Qualified Devices 716


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    PDF HPAC140, MWP-25, MWP-35 727 diode 716 transistor diode 716 BFY 34 transistor

    Untitled

    Abstract: No abstract text available
    Text: ACPM-5017 LTE Band12/17 698-716 MHz 3 x 3 mm Power Amplifier Module Data Sheet Description Features The ACPM-5017 is a fully matched 10-pin surface mount module developed for LTE Band12 and Band 17. This power amplifier module operates in the 697-716 MHz


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    PDF ACPM-5017 Band12/17 ACPM-5017 10-pin Band12 AV02-3006EN

    Untitled

    Abstract: No abstract text available
    Text: BLF8G09LS-400PW; BLF8G09LS-400PGW Power LDMOS transistor Rev. 2 — 20 December 2013 Preliminary data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz. Table 1.


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    PDF BLF8G09LS-400PW; BLF8G09LS-400PGW BLF8G09LS-400PW 8G09LS-400PGW

    Untitled

    Abstract: No abstract text available
    Text: BLF8G09LS-400PW; BLF8G09LS-400PGW Power LDMOS transistor Rev. 1 — 27 September 2013 Objective data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz. Table 1.


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    PDF BLF8G09LS-400PW; BLF8G09LS-400PGW BLF8G09LS-400PW 8G09LS-400PGW

    Untitled

    Abstract: No abstract text available
    Text: BLF8G09LS-400PW; BLF8G09LS-400PGW Power LDMOS transistor Rev. 3 — 24 March 2014 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz. Table 1. Typical performance


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    PDF BLF8G09LS-400PW; BLF8G09LS-400PGW BLF8G09LS-400PW 8G09LS-400PGW

    Untitled

    Abstract: No abstract text available
    Text: BLF8G09LS-270W; BLF8G09LS-270GW Power LDMOS transistor Rev. 1 — 27 September 2013 Objective data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 716 MHz to 960 MHz.


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    PDF BLF8G09LS-270W; BLF8G09LS-270GW BLF8G09LS-270W 8G09LS-270GW

    Untitled

    Abstract: No abstract text available
    Text: BLF8G09LS-270W; BLF8G09LS-270GW Power LDMOS transistor Rev. 2 — 17 January 2014 Product data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 716 MHz to 960 MHz.


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    PDF BLF8G09LS-270W; BLF8G09LS-270GW BLF8G09LS-270W 8G09LS-270GW

    transistor j241

    Abstract: j241 J241 transistor
    Text: Document Number: A2T07H310-24S Rev. 0, 6/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 47 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to


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    PDF A2T07H310--24S A2T07H310-24SR6 transistor j241 j241 J241 transistor

    PT 4863

    Abstract: NICR-NI pt100 datasheet PT100 JUMO PT100 Kennlinie datasheet NICR-NI IP6502 thermoelement thermostat en 60730
    Text: JUMO GmbH & Co. KG Hausadresse: Lieferadresse: Postadresse: Moltkestraße 13 - 31, 36039 Fulda, Germany Mackenrodtstraße 14, 36039 Fulda, Germany 36035 Fulda, Germany Telefon: 0661 6003-716 Telefax: 0661 6003-504 E-Mail: mail@jumo.net Internet: www.jumo.net


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    PDF Pt100 Pt100 PT 4863 NICR-NI pt100 datasheet PT100 JUMO PT100 Kennlinie datasheet NICR-NI IP6502 thermoelement thermostat en 60730

    ds33023

    Abstract: 24cxx eeprom programmer circuits DS30277 PIC16C71 PIC16C710 PIC16C711 PIC16C712 PIC16C715 PIC16C716 PIC16C72A
    Text: PIC16C712/716 8-Bit CMOS Microcontrollers with A/D Converter and Capture/Compare/PWM Devices included in this Data Sheet: • PIC16C712 Pin Diagrams • PIC16C716 18-pin PDIP, SOIC, Windowed CERDIP Microcontroller Core Features: 1 18 2 17 3 16 4 5 6 7 8 15


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    PDF PIC16C712/716 PIC16C712 PIC16C716 18-pin 20-pin D-81739 ds33023 24cxx eeprom programmer circuits DS30277 PIC16C71 PIC16C710 PIC16C711 PIC16C712 PIC16C715 PIC16C716 PIC16C72A

    ds33023

    Abstract: DS30277 marking codes transistors soic-18 wide PIC16C71 PIC16C710 PIC16C711 PIC16C712 PIC16C716 PIC16C7XX ICSP DS30277
    Text: PIC16C712/716 Data Sheet 8-Bit CMOS Microcontrollers with A/D Converter and Capture/Compare/PWM 2005 Microchip Technology Inc. DS41106B Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.


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    PDF PIC16C712/716 DS41106B DS41106B-page ds33023 DS30277 marking codes transistors soic-18 wide PIC16C71 PIC16C710 PIC16C711 PIC16C712 PIC16C716 PIC16C7XX ICSP DS30277

    Untitled

    Abstract: No abstract text available
    Text: PIC16C712/716 8-Bit CMOS Microcontrollers with A/D Converter and Capture/Compare/PWM Devices included in this Data Sheet: • PIC16C712 Pin Diagrams • PIC16C716 18-pin PDIP, SOIC, Windowed CERDIP Microcontroller Core Features: 1 18 2 17 3 16 4 5 6 7 8 15


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    PDF PIC16C712/716 PIC16C712 PIC16C716 18-pin PIC16C712 PIC16C716 DS41106A-page

    Untitled

    Abstract: No abstract text available
    Text: PIC16C712/716 Data Sheet 8-Bit CMOS Microcontrollers with A/D Converter and Capture/Compare/PWM 2005 Microchip Technology Inc. DS41106B Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.


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    PDF PIC16C712/716 DS41106B DS41106B-page

    ds33023

    Abstract: 16C716 PIC16C71 PIC16C710 PIC16C711 PIC16C712 PIC16C715 PIC16C716 PIC16C72A PIC16C7XX
    Text: PIC16C712/716 8-Bit CMOS Microcontrollers with A/D Converter and Capture/Compare/PWM Devices included in this Data Sheet: • PIC16C712 Pin Diagrams • PIC16C716 18-pin PDIP, SOIC, Windowed CERDIP Microcontroller Core Features: 1 18 2 17 3 16 4 5 6 7 8 15


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    PDF PIC16C712/716 PIC16C712 PIC16C716 18-pin 20-pin ds33023 16C716 PIC16C71 PIC16C710 PIC16C711 PIC16C712 PIC16C715 PIC16C716 PIC16C72A PIC16C7XX

    the PIC Mid-Range Reference Manual DS33023

    Abstract: PIC Mid-Range Reference Manual DS33023 the PIC Mid-Range Reference Manual DS33023 16 PIC18 example usart PIC16C73B-20
    Text: PIC16C712/716 8-Bit CMOS Microcontrollers with A/D Converter and Capture/Compare/PWM Devices included in this Data Sheet: • PIC16C716 18-pin PDIP, SOIC, Windowed CERDIP • High-performance RISC CPU • Only 35 single-word instructions to learn • All single-cycle instructions except for program


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    PDF PIC16C712/716 PIC16C712 PIC16C716 18-pin PIC16C712 PIC16C716 DS41106C-page the PIC Mid-Range Reference Manual DS33023 PIC Mid-Range Reference Manual DS33023 the PIC Mid-Range Reference Manual DS33023 16 PIC18 example usart PIC16C73B-20

    AVAGO PA LTE

    Abstract: No abstract text available
    Text: ACPM-5017 LTE Band12/17 698-716 MHz 3 x 3 mm Power Amplifier Module Data Sheet Description Features The ACPM-5017 is a fully matched 10-pin surface mount module developed for LTE Band12 and Band 17. This power amplifier module operates in the 698-716MHz bandwidth.


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    PDF ACPM-5017 Band12/17 ACPM-5017 10-pin Band12 698-716MHz AV02-3006EN AVAGO PA LTE

    SIDAC 200-400V

    Abstract: gas ignition thyristor ignitors for HID lamp circuits
    Text: l Se ec ag * es ED Z NI E9 G 39 CO 716 E R #E te L. U. k ac d P le Fi DO-15X Axial Lead DO-214 Surface Mount TO-92 Type 70 TO-202 Sidac 79 V to 330 V E9 General Description The sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. Upon


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    PDF DO-15X DO-214 O-202 SIDAC 200-400V gas ignition thyristor ignitors for HID lamp circuits

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT09S200W02N Rev. 0, 4/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 56 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability


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    PDF AFT09S200W02N 716lidated AFT09S200W02NR3 AFT09S200W02GNR3

    Untitled

    Abstract: No abstract text available
    Text: CESIWID Cesiwid Inc. Globar Division P.O. Box 339 Niagara Falls, New York 14302 Telephone 716-278-2521 Fax 716-278-6270 Globar Bulk Ceramic Varistors Product Information Globar bulk ceramic varistors, also called VDR’s voltagedependent resistors , are non-linear resistors with large


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    PDF 463BNR 927BNR 233BNR 234BNR

    MRC252

    Abstract: depletion mode BSD254 BSD254A BSD254AR
    Text: Philips Semiconductors ^ 7 1 I 0 flgb 0 Db7 716 Ib b N-channel depletion mode vertical D-MOS transistors FEATURES • P H IN ^Productspecilication BSD254; BSD254A; BSD254AR ’ QUICK REFERENCE DATA • High-speed switching • No secondary breakdown. SYMBOL


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    PDF 71IDflgb DDb7716 BSD254; BSD254A; BSD254AR BSD254 BSD254A 711002b BSD25* MRC252 depletion mode BSD254 BSD254A BSD254AR

    727 diode

    Abstract: diode 716 transistor 717 TRANSISTOR 726 716 transistor cfy transistor 35 CFY
    Text: G aAs Components Infineon •»ihnciogift* HiRel Discretes and Microwave Semiconductors 11 HiRel Discretes and Microwave Semiconductors Table of Contents Component Types Package Types Title Page 11.1 Preliminary Remarks 716 11.2 Introduction to HiRel and Space Qualified Devices


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    PDF BFY180, HPAC140, MWP-25, MWP-35 CGY41 727 diode diode 716 transistor 717 TRANSISTOR 726 716 transistor cfy transistor 35 CFY

    Untitled

    Abstract: No abstract text available
    Text: PIC16C 712/716 M ic r o c h ip 8-Bit CMOS Microcontrollers with A/D Converter and Capture/Compare/PWM Devices included in this Data Sheet: • PIC16C712 Pin Diagrams • PIC16C716 18-pin PDIP, SOIC, Windowed CERDIP Microcontroller Core Features: • High-performance RISC CPU


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    PDF PIC16C PIC16C712 PIC16C716 18-pin DS41106A-page

    Carborundum

    Abstract: 233BNR-32 carborundum varistor "silicon carbide" varistor glyptal varistor VDR 150 328BNR-40 231BNR-19 551BNR-26 551BNR-27
    Text: CARBORUNDUM CO/ ELECTRIC 2bE D I n0fl.7h3 GD001I7 4 • CÀR8 T -//-2 5 o The Carborundum Company Electronic Ceramics Division RO. Box 664 Niagara Fails, NY 14302 Telephone: 716 278-2521 Carborundum Varistors Carborundum varistors, also called VDR’s voltagedependent resistors , are non-linear resistors with large


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    PDF GD001I7 379BNR 463BNR 927BNR 233BNR 231BNR 234BNR Carborundum 233BNR-32 carborundum varistor "silicon carbide" varistor glyptal varistor VDR 150 328BNR-40 231BNR-19 551BNR-26 551BNR-27

    horizontal deflction output

    Abstract: TDA8303A TDA8303 Video Sync Separator 1992
    Text: Philips Sem iconductors i D D T tib T T 716 Prelim inary specification Small signal combination 1C for black/white TV ' N A P C / P H I L I P S SEMICOND TDA8303 TDA8303A b3E D — — The IF amplifier is followed by a passive synchronous . demodulator providing a regenerated carrier signal. This


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    PDF TDA8303 TDA8303A MLA665 bb53cà TDA8303 horizontal deflction output TDA8303A Video Sync Separator 1992