Untitled
Abstract: No abstract text available
Text: • 3 3 -1 3 RZ2731B60W IX PH IL IP S INTERNATIONAL SbE D ■ 711GflSb OD4tiS7ö GAS H P H I N PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power am plifier w ith a frequency range o f 2.7 to 3.1 GHz.
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RZ2731B60W
711GflSb
004b5flB
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MPA92
Abstract: 68W* transistor 68w transistor SOT123 Package BLF245 BH RV transistor International Power Sources P101 sot123 GZ22
Text: Product specification Philips Semiconductora VHF power MOS transistor PHILIPS INTERNATIONAL T 5bE D • - 3 1-11 * BLF245 711GflSb 0043301 3flfl BIPHIN PIN CONFIGURATION FEATURES • High power gain • Low noise figure • Easy power control • Good thermal stability
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TBLF245
OT123
-SOT123
711002b
BLF245
T-39-11
7110fl2b
MPA92
68W* transistor
68w transistor
SOT123 Package
BH RV transistor
International Power Sources
P101
sot123
GZ22
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by713
Abstract: Cathode indicated by blue band diode Cathode indicated by blue band BY712 BY714
Text: SbE 3> BY712 BY713 BY714 711GflSb 0040517 220 • PHIN PHILIPS i n t e r n a t i o n a l I M M I N SbE D T -o z -t* ’ SILICON E.H.T. SOFT-RECOVERY RECTIFIER DIODES* E.H .T. rectifier diodes in glass envelopes intended fo r use in high-voltage applications such as the highvoltage supply of television receivers and monitors. The devices feature non-snap-off characteristics.
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711GflSb
BY712
BY713
BY714
T-03-ls;
711Qfl2b
Cathode indicated by blue band
diode Cathode indicated by blue band
BY714
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BF965
Abstract: B753
Text: 711GflSb □□b753tì OST IPHIN BF965 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in plastic X-package w ith source and substrate interconnected, intended fo r VHF applications, such as VHF television tuners and professional com m unication
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711GflSb
b753tÃ
BF965
BF965
B753
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philips TIP142
Abstract: darlington TIP142 power amplifier philips TIP147
Text: TIP140 TIP141 TIP142 PHILIPS INTERNATIONAL SbE P B 711GflSb GD435flb 4ÖT H I P H I N T-33-z *T SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in monolithic Darlington circuit fo r audio output stages and general amplifier and switching applications. SOT-93 plastic envelope. P-N-P complements are TIP145, TIP146
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TIP140
TIP141
TIP142
711GflSb
GD435flb
T-33-z
OT-93
TIP145,
TIP146
TIP147.
philips TIP142
darlington TIP142 power amplifier
philips TIP147
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SFE10.52MJA10
Abstract: 8745H
Text: Philips Semiconductors Preliminary specification Satellite sound receiver with l2C-bus control TDA8745 FEATURES • On-chip frequency synthesizer and mixer: - tuning range 4 to 9.77 M Hz - reference oscillator 4 M H z using a crystal or 4 MHz frequency source
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TDA8745
711Dfl2ti
0101E00
SFE10.52MJA10
8745H
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thy 266
Abstract: m1435 M1443 M2803 BTR59-800R lg philips inverter M3226 IEC134 BTR59 Gate Turn-Off Thyristors
Text: PHILIPS INTERNATIONAL SflE D m 7110ÔHb 0D5305Ô TOT H P H I N B T R 5 9 S E R IE S FAST GATE TURN-OFF THYRISTORS Thyristors in SOT-93 envelopes which are capable o f being turned both on and o ff via the gate and may be used w ith gate-assisted tu rn -o ff in anode-commutated circuits. They are suitable fo r use in
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BTR59
OT-93
thy 266
m1435
M1443
M2803
BTR59-800R
lg philips inverter
M3226
IEC134
Gate Turn-Off Thyristors
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B303D
Abstract: TT 2222 npn transistor tt 2222 transistor npn 2xi transistor sot t06 FTC 960 trimmer PT 10 TT 2222 ka band transistor
Text: b5E » H 71106Eb D0b3DEÛ 07T « P H I N BLV91/SL PHILIPS INTERNATIONAL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor designed fo r use in mobile radio transm itters in the 900 MHz band. Features: • diffused emitter-ballasting resistors fo r an optim um temperature profile.
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BLV91/SL
OT-172D)
711005b
DGb3034
BLV91/SL
B303D
TT 2222 npn
transistor tt 2222
transistor npn 2xi
transistor sot t06
FTC 960
trimmer PT 10
TT 2222
ka band transistor
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SILICON DIFFUSED POWER TRANSISTOR
Abstract: T200I specification of curve tracer bu705 philips semiconductor BU705 700 v power transistor
Text: Philips Semiconductors Product specification Silicon diffused power transistor BU705 High-voltage, high-speed switching, glass passivated npn power transistor in a SO T93A envelope, intended fo r use in horizontal deflection circuits o f television receivers.
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BU705
OT93A
OT93A.
BU705
7Z810Ã
711GflEfa
77Mfib
SILICON DIFFUSED POWER TRANSISTOR
T200I
specification of curve tracer
bu705 philips semiconductor
700 v power transistor
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P83C524
Abstract: 80C51 P83C524FBA P83C524FBP P83C524FFA P83C524FFP P83C524FHP
Text: P H IL IP S I N T E R N A T I O N A L bSE J> □ 7 1 1 D Ö 2 b D D b l 3 4 3 544 H P H I N Philips Preliminary specification 8-bit microcontroller P83C524 CONTENTS 15 INSTRUCTION SET 1 FEATURES
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L1343
P83C524
P83C524
80C51
P83C524FBA
P83C524FBP
P83C524FFA
P83C524FFP
P83C524FHP
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Untitled
Abstract: No abstract text available
Text: TIP110 TIP111 TIP112 PHILIPS INTERNATIONAL SbE D • 711002b 0043550 224 H P H I N T -3 3 -Z SILICON DARLINGTON POWER TRANSISTORS N -P -N epitaxial-base transistors in m o n o lith ic D arlin g to n c irc u it fo r au dio o u tp u t stages and general purpose a m p lifie r and sw itching applications. T 0 -2 2 0 A B plastic envelope. P-N-P co m p lem ents are
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TIP110
TIP111
TIP112
711002b
TIP112_
0D43S54
TIP111
TIP112
711005b
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Untitled
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL SflE D • 7110fl2b GGS30Sfl TOT « P H I N _ BTR59 S E R IE S FAST GATE TURN-OFF THYRISTORS T h y risto rs in S O T -9 3 envelopes w hich are capable of being turned both on and o ff via the gate, and
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7110fl2b
GGS30Sfl
BTR59
--800R
711002b
M3226
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8A79
Abstract: SMD transistors 33T cable tv amplifier SSOP28 TDA5732 TDA6402 TDA6402M TDA6403 TDA6403M TSA5526
Text: Philips Semiconductors Preliminary specification 5 V mixer/oscillator and synthesizer for cable TV and VCR 2-band tuners TDA6402; TDA6403 FEATURES • Single-chip 5 V mixer/oscillator and synthesizer for cable TV and VCR tuners • Synthesizer function compatible with existing TSA5526
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TDA6402;
TDA6403
TSA5526
19-bit
27-bit
711DAEb
8A79
SMD transistors 33T
cable tv amplifier
SSOP28
TDA5732
TDA6402
TDA6402M
TDA6403
TDA6403M
TSA5526
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Diode SV-02
Abstract: 424 8P 850 nm LED for fiber-optic sensor 850 nm photodiode for fiber-optic sensor 850nm photodiode Fiber-optic fiber-optic photodiode for 850nm photodiode for fiber-optic sensor 850 nm TRANSIMpedance Amplifier NE5211D SA5211
Text: INTEGRATED CIRCUITS NE/SA5211 Transimpedance amplifier 180MHz Product specification 1995 Apr 26 IC19 Philips Semiconductors PHILIPS 7110fl2tj ODfl^T^a DDT • ! Philips Semiconductors Product specification Transimpedance amplifier (180MHz) NE/SA5211 DESCRIPTION
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NE/SA5211
180MHz)
7110fl2tj
NE/SA5211
28ki2
180MHz
sot108-1
076e06s
Diode SV-02
424 8P
850 nm LED for fiber-optic sensor
850 nm photodiode for fiber-optic sensor
850nm photodiode Fiber-optic
fiber-optic photodiode for 850nm
photodiode for fiber-optic sensor 850 nm
TRANSIMpedance Amplifier
NE5211D
SA5211
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al 60 dv 2425
Abstract: No abstract text available
Text: hSE B PHILIPS INTERNATIONAL • 711GÖSb DGbSSMT 7 7 CJ H P H I N BT136F SERIES FULL-PACK TRIACS Glass-passivated 4 ampere triacs in SOT-186 envelopes, which feature an electrically isolated m ounting base. They are intended fo r use in applications requiring high bidirectional transient and blocking
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BT136F
OT-186
BT136F--500
D8573
al 60 dv 2425
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TOKO RMC 2A6597H
Abstract: 2A6597H ICM4712701 RMC-2A6597H TOKO 455KHz ceramic filter SFG455 SFG455A3 TOKO 455KHz filter signetics rf Receiver Circuits signetics PLL
Text: SÖE D PH ILI PS INTERNATIONAL 711QflHb QQSQQbl 7H1 « P H I N Slgnetics RF Communications Preliminary specification Low-voltage high performance mixer FM IF system DESCRIPTION The NE/SA617 is a low voltage high performance monolithic FM IF system incorporating a mixer/oscillator, two limiting
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NE/SA617
NE/SA617
20-lead
NE617was
NE605.
711QflSb
TOKO RMC 2A6597H
2A6597H
ICM4712701
RMC-2A6597H
TOKO 455KHz ceramic filter
SFG455
SFG455A3
TOKO 455KHz filter
signetics rf Receiver Circuits
signetics PLL
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exo 35j
Abstract: 80C51 80C550 83C550 87C550 eprom 2532 1031H lme3
Text: • 711Gfi2b DGbbMl? bTT ■ PHIN Philips Semiconductors Microcontroller Products Product specification CMOS single-chip 8-bit microcontroller with A/D and watchdog timer DESCRIPTION FEATURES The Philips 8XC550 is a high-performance microcontroller fabricated with Philips
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711Gfi2b
80C550/83C550/87C550
8XC550
80C51.
87C550
83C550
80C550
48tcLCL
exo 35j
80C51
eprom 2532
1031H
lme3
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extra bass circuit diagram
Abstract: TEA6310T TEA6310 extra bass circuit ELFI capacitor S028 bass mid treble control circuit BASS mid TREBLE CIRCUIT 7Z23 4682
Text: TEA6310T SOUND FADER CONTROL CIRCUIT GENERAL DESCRIPTION The Sound Fader C o n tro l c irc u it SOFAC is an l 2C-bus co n tro lle d tone and volum e co n tro l c irc u it fo r car radios. Features • V olum e and balance c o n tro l; co n tro l range o f 86 dB in steps o f 2 dB
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TEA6310T
711D02t
711005b
711002b
extra bass circuit diagram
TEA6310T
TEA6310
extra bass circuit
ELFI capacitor
S028
bass mid treble control circuit
BASS mid TREBLE CIRCUIT
7Z23
4682
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SMD MARKING CODE s4
Abstract: BBY62 sot143 TOP marking 16 "MARKING CODE S4" device marking code S4 S4 SMD Marking Code smd diode code S4 SOT143 package
Text: Philips Semiconductors Product specification UHF variable capacitance double diode BBY62 FEATURES • Excellent linearity • Small plastic SMD package • C28:1.9 pF; ratio: 8.3. 4 3 4 3 ÆD APPLICATIONS • Electronic tuning in UHF television tuners • vco.
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BBY62
BBY62
OT143
125ections
SMD MARKING CODE s4
sot143 TOP marking 16
"MARKING CODE S4"
device marking code S4
S4 SMD Marking Code
smd diode code S4
SOT143 package
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4BB7
Abstract: a699 3843 application note RBL 43 P TRANSISTOR MAB8048 MAB8400 PC10 PC11 PCD33XXA
Text: Product specification Philips Semiconductors 8-bit telecom microcontrollers PCD33XXA Family 1 INTRO D UCTIO N 3 G ENERAL DESCRIPTION This data sheet describes the shared properties of the PCD 33XXA fam ily of m icrocontrollers and its quickly growing num ber of derivative m icrocontrollers. For a
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PCD33XXA
MAB8048)
MBA281
4BB7
a699
3843 application note
RBL 43 P TRANSISTOR
MAB8048
MAB8400
PC10
PC11
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691H
Abstract: PLCC68 SAA7111 SAA7151B SAA7184 SAA7185B 117h
Text: Philips Semiconductors Preliminary specification Digital Video Encoders DENC2-M6 SAA7184; SAA7185B FEATURES • CMOS 5 V device • Digital PAL/NTSC encoder • System pixel frequency 13.5 MHz • Accepts MPEG decoded data • 8-bit wide MPEG port GENERAL DESCRIPTION
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SAA7184;
SAA7185B
16-bit
711002b
691H
PLCC68
SAA7111
SAA7151B
SAA7184
SAA7185B
117h
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74ABT373
Abstract: 74ABT573A 74ABT573AD 74ABT573AN 7ABT573APW GCHG420
Text: INTEGRATED CIRCUITS 74ABT573A Octal D-type transparent latch 3-State Product specification 1995 May 22 IC23 Data Handbook Philips Semiconductors PHILIPS PH ILIPS 711002b 0CH0417 =140 This Material Copyrighted By Its Respective Manufacturer Philips Semiconductors
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74ABT573A
711002b
0CH0417
74ABT573A
74ABT373
500mA
OT36Q-1
OT360-1
MO-153AC
74ABT373
74ABT573AD
74ABT573AN
7ABT573APW
GCHG420
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tda8367
Abstract: TDA9162 DBS13P TDA8351A TDA8366 TDA9150 TDA9151B TDA9160A
Text: IN TEG R A TED C IR C U ITS TDA8351A DC-coupled vertical deflection output circuit O bjective specification File under Integrated Circuits, IC02 January 1995 Philips Semiconductors PHILIPS P H IL IP S 7 11 DA 2L , □Dflb4El T17 This Material Copyrighted By Its Respective Manufacturer
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TDA8351A
711DA2L,
533061/1500/01/pp16
tda8367
TDA9162
DBS13P
TDA8351A
TDA8366
TDA9150
TDA9151B
TDA9160A
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POCSAG
Abstract: icl 7103 173 MHz RF receiver LQFP32 PCD5003 PCF5001 S028 UAA2080 UAA2080H UAA2080T
Text: Philips Semiconductors Product specification Advanced pager receiver UAA2080 FEATU RES G EN ER A L DESCRIPTION • Wide frequency range: VHF, UHF and 900 MHz bands The UAA2080 is a high-performance low-power radio receiver circuit primarily intended for VHF, UHF and
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UAA2080
PCA5000A,
PCF5001
PCD5003
GENE60
711002b
POCSAG
icl 7103
173 MHz RF receiver
LQFP32
S028
UAA2080
UAA2080H
UAA2080T
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