Led driver 100W schematic
Abstract: KNB1560 cp5 94v-0 power supply driver led 100w schematic 100w amp schematic diagram schematic diagram 100w amp IRF22N60K CP5 94V0 TEA1507 ir1166
Text: User Guide 1.0 IRAC11662-100W +16V Low-side Smart Rectification 100W Flyback Demo Board User’s Guide by HELEN DING, ISRAEL SERRANO 19 April 2010 Rev.1A 19 April 2010 UG #1.0 Page 1 of 24 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: 310 252-7105
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IRAC11662-100W
M3X38;
SFH615A2
TEA1507
SFH615A-2
Led driver 100W schematic
KNB1560
cp5 94v-0
power supply driver led 100w schematic
100w amp schematic diagram
schematic diagram 100w amp
IRF22N60K
CP5 94V0
TEA1507
ir1166
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IRAC1166-100W
Abstract: KNB1560 cp5 94v-0 tdk ferrite PQ3535 CP5 94V0 hughes TERMINAL 200-203 PQ3535 PC44 smd diode f4 4d t3.15A/250V IRF22N60K
Text: 10 Ang Mo Kio Street 65, #03-18 TechPoint, Singapore 569059 Reference Design # 0618 IRAC1166-100W +16V Low-side Smart Rectification 100W Flyback Demo Board User’s Guide by ISRAEL SERRANO 18 August 2006 Rev.1A 18 August 2006 RD#0618 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: 310 252-7105
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IRAC1166-100W
531102B02500G
M3X38;
SEM02030006FA
IRAC1166-100W
KNB1560
cp5 94v-0
tdk ferrite PQ3535
CP5 94V0
hughes TERMINAL 200-203
PQ3535 PC44
smd diode f4 4d
t3.15A/250V
IRF22N60K
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KNB1560
Abstract: IRF22N60K cp5 94v-0 4N7 CAPACITOR 1000V CP5 94V0 IRF22N60 hughes 200-203
Text: User Guide 1.0 IRAC11662-100W 123456789ABCD5EF5DBBB75 525 5 DF75 7C55 AD!A5"#BCD5 by HELEN DING, ISRAEL SERRANO 19 April 2010 Rev.1A 19 April 2010 UG #1.0 Page 1 of 24 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: 310 252-7105
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IRAC11662-100W
123456789ABCD5EF
M3X38;
SFH615A2
TEA1507
SFH615A-2
KNB1560
IRF22N60K
cp5 94v-0
4N7 CAPACITOR 1000V
CP5 94V0
IRF22N60
hughes 200-203
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IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
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30am-5
44-0-1737-2com
DB8029C
IRF460
SMD TRANSISTOR MARKING k38
smd transistor k38
we 751002 s
SMD-6C
transistor smd k45
RAD-HARD igbt
IRF3504
afl2805s manufactured by international rectifier
550-065
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Untitled
Abstract: No abstract text available
Text: Application Note AN-1053 Power-up Sequencing Techniques Using iP1201 & iP1202 by David Jauregui, International Rectifier Table of Contents Power-up Sequencing Approaches Page Sequential
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AN-1053
iP1201
iP1202
iP1201/2
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power mosfet 100v 250w
Abstract: n-channel 250w power mosfet
Text: CONTROL IC THE POWER MANAGEMENT LEADER IR5001S Active ORing IC Makes Redundant Systems More Efficient IR ADVANTAGE • IC controller and driver in a single SO-8 package • Suitable for both input ORing and output ORing for redundant DC-DC and AC-DC power supplies
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IR5001S
130nS
IR5001S
10628FS
power mosfet 100v 250w
n-channel 250w power mosfet
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TP2504N8
Abstract: TO-243AA P024 TP2502 TP2502ND TP2504ND
Text: TP2502/TP2504 TP2502 TP2504 Low Threshold Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON VGS(th) ID(ON) BVDGS (max) (max) (min) TO-243AA* DICE† -20V 2.0Ω -2.4V -2.0A — TP2502ND -40V
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TP2502/TP2504
TP2502
TP2504
O-243AA*
TP2502ND
TP2504N8
TP2504ND
OT-89.
TP2504N8
TO-243AA
P024
TP2502
TP2502ND
TP2504ND
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TN2640
Abstract: TN2640LG TN2640N3 TN2640ND
Text: TN2640 Low Threshold Preliminary N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† 400V 5.0Ω 2.0V 2.0A TN2640LG TN2640N3 TN2640ND MIL visual screening available.
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TN2640
TN2640LG
TN2640N3
TN2640ND
653pF
253pF
TN2640
TN2640LG
TN2640N3
TN2640ND
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TN2640
Abstract: TN2640LG TN2640N3 TN2640ND
Text: TN2640 Low Threshold Preliminary N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† 400V 5.0Ω 2.0V 2.0A TN2640LG TN2640N3 TN2640ND MIL visual screening available.
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TN2640
TN2640LG
TN2640N3
TN2640ND
653pF
253pF
TN2640
TN2640LG
TN2640N3
TN2640ND
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Untitled
Abstract: No abstract text available
Text: TN2640 Low Threshold Preliminary N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† 400V 5.0Ω 2.0V 2.0A TN2640LG TN2640N3 TN2640ND MIL visual screening available.
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TN2640
TN2640LG
TN2640N3
TN2640ND
Guides/CH06A
Table/ch06a
CH06F
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10mhz mosfet
Abstract: IRF7534D1 3A 300V Schottky Diode
Text: PD -93864 IRF7534D1 FETKY MOSFET & Schottky Diode HEXFET Co-packaged power MOSFET and Schottky diode ● Ultra Low On-Resistance MOSFET ● Trench technology TM Footprint ● Micro8 ● Available in Tape & Reel Description ● 1 8 K A 2 7 K S 3 6 D G 4 5
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IRF7534D1
10mhz mosfet
IRF7534D1
3A 300V Schottky Diode
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SD08H0SK
Abstract: isotek 1812 Isotek SMT-R000 keystone 1028 10MQ040N 6TPB470M AN-1028 AN-1029 AN-1030 capacitor smt 10uf 25v
Text: REFERENCE DESIGN International Rectifier IRDCiP1001-B • 233 Kansas Street, El Segundo, CA 90245 USA IRDCiP1001-B, 200kHz to 300kHz, 20A, 5VIN to 12VIN Single Phase Synchronous Buck Converter using iP1001 Overview In this document, Table 1 and Figure 1 are provided to enable engineers to
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IRDCiP1001-B
IRDCiP1001-B,
200kHz
300kHz,
12VIN
iP1001
iP1001
SD08H0SK
isotek 1812
Isotek SMT-R000
keystone 1028
10MQ040N
6TPB470M
AN-1028
AN-1029
AN-1030
capacitor smt 10uf 25v
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C4532X5R0J107MT
Abstract: 100uf 16v murata tantalum resistor 91k 470uf 16V tantalum 50V 100uf isotek 1812 keystone 1028 10MQ040N CR43-220 AN-1028
Text: REFERENCE DESIGN International Rectifier IRDCiP1001-A • 233 Kansas Street, El Segundo, CA 90245 USA IRDCiP1001-A, 200kHz, 20A, 3.3VIN to 4.5VIN Single Phase Synchronous Buck Converter using iP1001 Overview In this document, Table 1 and Figure 1 are provided to enable engineers to
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IRDCiP1001-A
IRDCiP1001-A,
200kHz,
iP1001
iP1001
C4532X5R0J107MT
100uf 16v murata tantalum
resistor 91k
470uf 16V tantalum
50V 100uf
isotek 1812
keystone 1028
10MQ040N
CR43-220
AN-1028
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NT7506
Abstract: NT7506H-BDT 5mm rainbow led 128128 NT75 128128-a BTHQ 128
Text: Specification BTHQ 128128AJA-FETF-06-LEDWHITE-COG-TP_ NT Doc. No.: MSGF9622-07 Version June 2008 Data Modul AG - www.data-modul.com REVISION HISTORY: Revision 1.0 Date 14-Jun.-2008 Description Written By Approved By New Release (Modified from MSGF9622-06 by changing IC to
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128128AJA-FETF-06-LEDWHITE-COG-TP_
MSGF9622-07
14-Jun
MSGF9622-06
NT7506H-BDT)
D-70771
NT7506
NT7506H-BDT
5mm rainbow led
128128
NT75
128128-a
BTHQ 128
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ADC12B
Abstract: atmel 1224 AT91SAM3U4C AT91SAM3U4 SAM3u AT91SAM3U4E Atmel MARKING CODE AT91SAM3U1C ATMEL 1212 AT91SAM3U2E
Text: Errata on SAM3U Engineering Sample Devices 1. Scope This document describes the known errata found on the SAM3U series engineering samples. 1.1 Marking All devices are marked with the Atmel logo and the ordering code. Additional marking is as follows: YYWW
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6483C
09-Aug-10
AT91SAM3U4E
AT91SAM3U2E
AT91SAM3U1E
AT91SAM3U4C
AT91SAM3U2C
AT91SAM3U1C
ADC12B
atmel 1224
AT91SAM3U4C
AT91SAM3U4
SAM3u
AT91SAM3U4E
Atmel MARKING CODE
AT91SAM3U1C
ATMEL 1212
AT91SAM3U2E
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FDP039N08B
Abstract: fdp039 547 MOSFET
Text: FDP039N08B_F102 N-Channel PowerTrench MOSFET 80V, 171A, 3.9mW Features Description • RDS on = 3.16mW ( Typ.) @ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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547 MOSFET
Abstract: No abstract text available
Text: FDP039N08B_F102 N-Channel PowerTrench MOSFET 80 V, 171 A, 3.9 mΩ Features Description • RDS on = 3.16 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A • Low Reverse Recovery Charge, Qrr = 87.9 nC This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has
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SD214
Abstract: 2N7106 2N7104 2N7105 2N7107 2N7108 2N7109 SD210CHP SD211CHP 2M7105
Text: TOPAZ S E M I C O N D U C T O R DSE Wimmm D | ^OöSaEt, D D O G ^ Ô Ô _ T '- S | ir , ’ ' 2 ^ 2N7104, 2W7105, 2N7106 SEMICONDUCTOR ^ 7 1 0 7 ; 2 N7 1 0 8 , 2 N7 1 0 9 N-CHANNEl ENHANCEMENT-MODE D-M S FET SWITCHES ORDERING INFORMATION
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2N7104,
2N7106
2M7108
2N7109
2N71Q4
2N7105+
2N7106
2N7107+
2N7108
2N7109+
SD214
2N7104
2N7105
2N7107
2N7109
SD210CHP
SD211CHP
2M7105
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TP2504N8
Abstract: A773 A773* Transistor P024 TP2502 TP2502ND TP2504ND 43AA
Text: S u p e r te x in c TP2502 TP2504 . Low Threshold Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information B V oss/ R d S<ON ^ G S ith ) B V dgs max) (m ax) -20V 2.0Q -2.4V -40V 2.0CÌ -2.4V W n) (min) Order Num ber / Package TO-243AA*
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TP2502
TP2504
O-243AA*
TP2502ND
TP2504N8
TP2504ND
OT-89.
000451b
A773
A773* Transistor
P024
TP2502ND
TP2504ND
43AA
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Untitled
Abstract: No abstract text available
Text: TP2502 hm. tp 2504 I n w T h rftg h n lrB l Prelim inary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON ^GS(th) I d (ON) Order Number / Package BVdgs (max) (max) (min) TO-243AA* DICE+ -20V 2.0Q -2.4V -2.0A — TP2502ND
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TP2502
O-243AA*
TP2504N8
TP2502ND
TP2504ND
TP2502/TP2504
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Untitled
Abstract: No abstract text available
Text: TN2640 Supertex Inc. Low Threshold Preliminary N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package R d S ON V GS(th) '□(ON) «C s (max) (max) (min) SO-8 TO-92 Diet 400V 5.0fi 2.0V 2.0A TN2640LG TN2640N3 TN2640ND M IL visual screening available.
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TN2640
TN2640LG
TN2640N3
TN2640ND
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Untitled
Abstract: No abstract text available
Text: TN2640 Supertex inc. Low Threshold Preliminary N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON ^GS(th) I d (ON) b v dgs (max) (max) (min) SO-8 TO-92 Diet 400V 5.0Q. 2.0V 2.0A TN 2640LG T N 2640N 3
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TN2640
2640LG
2640N
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Diode SY 356
Abstract: SY 356 sy356 34992 diode sy 345 C6042 Lautsprecher LP SY360 sy 360 stassfurt
Text: SERVICE-M ITTEILUNGEN V E B IN O U S T R tE V E R T R IE B R U N D F U N K U N D F E R N S E H E N r a d i o -television AUSGABE: Seite 1986 1-4 Mitteilung aus den VEB Fernsehgerätewerk Staßfurt 1. Ablösung der sowjetischen Ge-Diode D 7 D in den Geräten
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2001/DBBtjT
Diode SY 356
SY 356
sy356
34992
diode sy 345
C6042
Lautsprecher LP
SY360
sy 360
stassfurt
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C G 774 6-1
Abstract: M68000 MC68020 MC68030 MC68851 MC68881 MC68882 pipeline synchronization 961963 MOTOROLA 934
Text: INDEX A Abort Task Routine 9-82 Absolute Long Address Mode 2-20 Absolute Short Address Mode 2-20 Access Time Calculations, Memory 12-14 Accesses, Read-Modify-Write 6-10 Acknowledge, Breakpoint 8-10 Activity Data Bus 12-11 Processor Even Alignment 11-9 Odd Alignment 11-10
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MC68020
32-Bit
MC68030
Index-15
Index-16
C G 774 6-1
M68000
MC68851
MC68881
MC68882
pipeline synchronization
961963
MOTOROLA 934
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