2SK2786
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <FIELD-EFFECT TRANSISTOR 2SK2786 ^ FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE DESCRIPTION Mitsubishi 2SK2786 is a silicon N channel ¡unction type FET. It is especially OUTLINE DRAWING 4 .3 M A X designed for low frequency low noise amplify application.
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2SK2786
2SK2786
100Hz)
70Qtyp
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2SK108
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR FIELD-EFFECT TRANSISTOR 2SK108 FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE DESCRIPTION Unfcmm OUTLINE DRAWING Mitsubishi 2SK108 is a silicon N channnel junction type FET. It is especially ¿5.6M AX designed for low frequency low noise amplify application.
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2SK108
2SK108
100Hz)
70Qtyp
SC-43
10Vrms
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2SB1621
Abstract: 10J1 MT200
Text: • W t'M i/m y W M $ T z « $ 3:S A M E N UVKKSKAS I! nn tt i R:72b I &ÉP *0*5 s&g 1 . * 2 0 0 W jSIHlîlihS! *> J 3 y ^ 7 - h ? / v ' x í ' 2 S B 1 621 P. 02/04 a w iS ¿a 1994 8 ® - 11 - 14 liVfflífÍlif “ iSiSTRft{IÍír ^ — 7" 1. iS/BKBfl c o s.» « .
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2SB1621
SSE-19841
hSBl62l
hFE85
70QTyp.
MT200
LF200
4B-E01143
10J1
MT200
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