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    70NC Search Results

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    F2970NCGK Renesas Electronics Corporation 75 ohm SP2T RF Switch 5 MHz to 3000 MHz Visit Renesas Electronics Corporation
    F2970NCGK8 Renesas Electronics Corporation 75 ohm SP2T RF Switch 5 MHz to 3000 MHz Visit Renesas Electronics Corporation
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    70NC Price and Stock

    Sumida Corporation CDR6D28MNNP-470NC

    FIXED IND 47UH 720MA 458.8 MOHM
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    DigiKey CDR6D28MNNP-470NC Reel 57,000 1,500
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    CDR6D28MNNP-470NC Cut Tape 4,265 1
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    Avnet Americas CDR6D28MNNP-470NC Reel 34 Weeks, 2 Days 1,500
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    Sumida Corporation CDRH104RNP-470NC

    FIXED IND 47UH 1.9A 128 MOHM SMD
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    DigiKey CDRH104RNP-470NC Reel 34,000 1,000
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    CDRH104RNP-470NC Cut Tape 5,509 1
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    Avnet Americas CDRH104RNP-470NC Reel 34 Weeks, 2 Days 1,000
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    Mouser Electronics CDRH104RNP-470NC 2,997
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    Bristol Electronics CDRH104RNP-470NC 750
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    Avnet Asia CDRH104RNP-470NC 16 Weeks 1,000
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    New Advantage Corporation CDRH104RNP-470NC 4,000 1
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    Sumida Corporation CDRH105RNP-470NC

    FIXED IND 47UH 2A 130 MOHM SMD
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    DigiKey CDRH105RNP-470NC Reel 6,500 500
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    CDRH105RNP-470NC Cut Tape 253 1
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    Avnet Americas CDRH105RNP-470NC Reel 42 Weeks, 6 Days 500
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    Mouser Electronics CDRH105RNP-470NC 7,583
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    Sumida Corporation CDRH5D28NP-470NC

    FIXED IND 47UH 620MA 250MOHM SMD
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    DigiKey CDRH5D28NP-470NC Reel 4,000 2,000
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    CDRH5D28NP-470NC Cut Tape 294 1
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    Avnet Americas CDRH5D28NP-470NC Reel 42 Weeks, 6 Days 2,000
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    Bristol Electronics CDRH5D28NP-470NC 3,275 4
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    Rutronik CDRH5D28NP-470NC Reel 2,000 2,000
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    New Advantage Corporation CDRH5D28NP-470NC 4,000 1
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    Sumida Corporation CDRH8D38NP-470NC

    FIXED IND 47UH 1.42A 189MOHM SMD
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    DigiKey CDRH8D38NP-470NC Reel 4,000 1,000
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    CDRH8D38NP-470NC Cut Tape 1,753 1
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    70NC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FDMS36101L_F085 N-Channel Power Trench MOSFET 100V, 38A, 26mΩ Features „ Typ rDS on = 18mΩ at VGS = 10V, ID = 20A „ Typ Qg(tot) = 70nC at VGS = 10V, ID = 20A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control


    Original     		PDF FDMS36101L

    SFH054

    Abstract: 10VGS TL 0621 P
    Text: PRELIMINARY SFH054 SemiWell Semiconductor N-Channel MOSFET Features Symbol • Low RDS on (0.014Ω )@VGS=10V ■ Low Gate Charge (Typical 70nC) Low Crss (Typical 160pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (175°C)


    Original     		PDF SFH054 160pF) battH054 O-247 SFH054 10VGS TL 0621 P

    SFP70N06

    Abstract: No abstract text available
    Text: SFP70N06 SemiWell Semiconductor N-Channel MOSFET Features Symbol • Low RDS on (0.014Ω )@VGS=10V ■ Low Gate Charge (Typical 70nC) Low Crss (Typical 160pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (175°C) ■


    Original     		PDF SFP70N06 160pF) O-220 SFP70N06

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQAF15N70 FEATURES BVDSS = 700V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 70nC Typ. •


    Original     		PDF FQAF15N70

    Untitled

    Abstract: No abstract text available
    Text: SCS120KG Datasheet SiC Schottky Barrier Diode Outline VR 1200V IF 20A QC 70nC 1 TO-220AC (2) (3) Inner circuit Features (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible


    Original     		PDF SCS120KG O-220AC R1102S

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQA15N70 FEATURES BVDSS = 700V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 70nC Typ. • Extended Safe Operating Area


    Original     		PDF FQA15N70

    2 input and gate 24v

    Abstract: gate drive protection smd transistor 26 2SK3575 2SK35
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3575 TO-263 Unit: mm +0.1 1.27-0.1 Features 4.5V drive available. +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 70nC TYP. VDD = 24 V, VGS = 10 V, ID = 83 A Built-in gate protection diode


    Original     		PDF 2SK3575 O-263 2 input and gate 24v gate drive protection smd transistor 26 2SK3575 2SK35

    Untitled

    Abstract: No abstract text available
    Text: SCS120KG SiC Schottky Barrier Diode Datasheet lOutline VR 1200V IF 20A QC 70nC 1 TO-220AC (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)


    Original     		PDF SCS120KG O-220AC R1102B

    SFP70N06

    Abstract: No abstract text available
    Text: PRELIMINARY SFP70N06 SemiWell Semiconductor N-Channel MOSFET Features Symbol • Low RDS on (0.014Ω )@VGS=10V ■ Low Gate Charge (Typical 70nC) Low Crss (Typical 160pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (175°C)


    Original     		PDF SFP70N06 160pF) O-220 SFP70N06

    smart charge alternator

    Abstract: No abstract text available
    Text: FDBL86210_F085 N-Channel Power Trench MOSFET 150V, 169A, 6.3mΩ Features „ Typ rDS on = 5mΩ at VGS = 10V, ID = 80A „ Typ Qg(tot) = 70nC at VGS = 10V, ID = 80A D „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications G „ Automotive Engine Control


    Original     		PDF FDBL86210 smart charge alternator

    MARKING 30 ROHM

    Abstract: SCS120KG
    Text: SCS120KG Datasheet SiC Schottky Barrier Diode lOutline VR 1200V IF 20A QC 70nC 1 TO-220AC (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)


    Original     		PDF SCS120KG O-220AC R1102B MARKING 30 ROHM SCS120KG

    max31826

    Abstract: MAX31826MUA Microcontroller Cross-Reference Q05n 260NC
    Text: 19-6264; Rev 0; 3/12 MAX31826 1-Wire Digital Temperature Sensor with 1Kb Lockable EEPROM General Description The MAX31826 digital thermometer provides 12-bit temperature measurements and communicates over a 1-WireM bus that by definition requires only one data line


    Original     		PDF MAX31826 12-bit -55NC 125NC -10NC 64-bit MAX31826MUA Microcontroller Cross-Reference Q05n 260NC

    max5986

    Abstract: vwad MAX5987AETE T1655
    Text: 19-6261; Rev 0; 4/12 EVALUATION KIT AVAILABLE MAX5986A/MAX5987A IEEE 802.3af-Compliant, High-Efficiency, Class 1, Powered Devices with Integrated DC-DC Converter General Description The MAX5986A/MAX5987A provide a complete powersupply solution as IEEE 802.3af-compliant Class 1


    Original     		PDF MAX5986A/MAX5987A MAX5987A MAX5986A max5986 vwad MAX5987AETE T1655

    AIN97

    Abstract: MAX11329
    Text: EVALUATION KIT AVAILABLE MAX11329–MAX11332 3Msps, 12-/10-Bit, 8-/16-Channel ADCs with Post-Mux External Signal Conditioning Access General Description Benefits and Features The MAX11329–MAX11332 are 12-/10-bit with external reference and 500kHz, full-linear-bandwidth, high-speed,


    Original     		PDF MAX11329 MAX11332 12-/10-Bit, 8-/16-Channel 12-/10-bit 500kHz, AIN97

    light sensitive triggers

    Abstract: MAX44004 lux meter calibration D622N photodiode CIE eye response photodiode application lux meter human eye
    Text: 19-5997; Rev 0; 5/12 EVALUATION KIT AVAILABLE MAX44004 Digital Ambient Light Sensor General Description The MAX44004 is a wide dynamic range, lowpower ambient light sensor ALS ideal for many light sensing applications: tablets, displays, accessories, medical devices, and light management systems.


    Original     		PDF MAX44004 D622N light sensitive triggers lux meter calibration photodiode CIE eye response photodiode application lux meter human eye

    92FA

    Abstract: 15FV
    Text: 19-6266; Rev 0; 4/12 EVALUATION KIT AVAILABLE MAX15104 Small 2A, Low-Dropout Linear Regulator in a 2.7mm x 1.6mm Package General Description Features The MAX15104 is a small, low-dropout linear regulator optimized for networking, datacom, and server applications. The regulator delivers up to 2A from a 1.7V to 5.5V


    Original     		PDF MAX15104 150mV 92FA 15FV

    MAX97220

    Abstract: MAX97220AETE T MAX97220A MAX97220BETE MAX97220BETE T
    Text: 19-5611; Rev 2; 7/12 TION KIT EVALUA BLE IL AVA A Differential Input DirectDrive Line Drivers/Headphone Amplifiers DirectDrive Features The MAX97220_ is a differential input line driver/headphone amplifier. This device is capable of driving line level loads with 3VRMS into 1kI with a 5V


    Original     		PDF 125mW 18-Bit 112dB MAX9722 MAX97220_ MAX97220E MAX97220A MAX97220E MAX97220 MAX97220AETE T MAX97220BETE MAX97220BETE T

    Untitled

    Abstract: No abstract text available
    Text: DRAW ING MADE IN A M E R I C A N * PROJECTION 1ST I BY AMP INCORPORATED . ALL RIGHTS RESERVED. AMP PRODUCTS COVERED BY PATENTjS-AND 'OR PATENTS PENDING. 70NC CTR /Tn, A P P R O P R v A T E M I I . \ S S T A \ K P E D ONi i.n a A P / K i J O T / ? \ St/PSD 8 Y 2 C 5 4 S Î - Z % 9/.-’fc'-2.


    OCR Scan     		PDF

    FQA15N70

    Abstract: 700v 5A mosfet
    Text: QFET N-CHANNEL FQA15N70 FEATURES BV qss = 700V Advanced New Design R DS ON Avalanche Rugged Technology = 0.56Î2 lD = 15A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 70nC (Typ.)


    OCR Scan     		PDF FQA15N70 FQA15N70 700v 5A mosfet

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQAF15N70 FEATURES BV dss = 700V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 70nC Typ. •


    OCR Scan     		PDF FQAF15N70

    700v 5A mosfet

    Abstract: 700v 7.5A mosfet FQAF15N70 95A TO
    Text: QFET N-CHANNEL FQAF15N70 FEATURES BV dss = 700V Advanced New Design R ds ON = 0.56Î2 Avalanche Rugged Technology lD = 9.5A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 70nC (Typ.)


    OCR Scan     		PDF FQAF15N70 700v 5A mosfet 700v 7.5A mosfet FQAF15N70 95A TO

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQA15N70 FEATURES BV dss = 700V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 70nC Typ. •


    OCR Scan     		PDF FQA15N70

    Applications Note U-137

    Abstract: No abstract text available
    Text: y UNITRODE UCC1776 UCC2776 UCC3776 PRELIMINARY Quad FET Driver FEATURES DESCRIPTION • High Peak Output Current Each Output - 1.5A Source, 2.0A Sink • W ide Operating Voltage Range 4.5V to 18V • Thermal Shutdown • CMOS Compatible Inputs • Outputs Are Active Low


    OCR Scan     		PDF UCC1776 UCC2776 UCC3776 UCC3776 C3776 UC3879 Applications Note U-137

    Untitled

    Abstract: No abstract text available
    Text: UCC1776 UCC2776 UCC3776 UNITRODE Quad FET Driver PRELIMINARY FEATURES DESCRIPTION • High Peak Output Current Each Output - 1 .5A Source, 2.0A Sink The UCC3776 is a four output BCDMOS buffer/driver designed to drive highly capacitive loads such as power MOSFET gates at high speeds. The


    OCR Scan     		PDF UCC1776 UCC2776 UCC3776 UCC3776 UC3879