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    702 Y TRANSISTOR Search Results

    702 Y TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    702 Y TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    702 y TRANSISTOR

    Abstract: 702 Z TRANSISTOR transistor marking 702 application marking 702 FAIRCHILD ic 701
    Text: KSE700/701/702/703 KSE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to KSE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor


    Original     		PDF KSE700/701/702/703 KSE800/801/802/803 O-126 KSE700/701 KSE702/703 KSE703 KSE703S 702 y TRANSISTOR 702 Z TRANSISTOR transistor marking 702 application marking 702 FAIRCHILD ic 701

    relay busbar

    Abstract: SB-S11-P1-01-1-1A 710 opto coupler Weidmuller plc terminal phoenix 17PLUS-Q02-00 50035-G32 DC24 relay coupler with 2 n o contacts E-1048-7
    Text: Solid State Remote Power Controller E-1048-7. Description The E-T-A Solid State Remote Power Controller E-1048-7. is a transistorised switching device providing both protection and signalisation. It is suitable for all applications where the capabilities


    Original     		PDF E-1048-7. 17plus spri61 46244-A6 23-P10-Si 63-P10-Si relay busbar SB-S11-P1-01-1-1A 710 opto coupler Weidmuller plc terminal phoenix 17PLUS-Q02-00 50035-G32 DC24 relay coupler with 2 n o contacts E-1048-7

    transistor k 702

    Abstract: TRANSISTOR S 802 kse800
    Text: KSE800/801/802/803 KSE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to KSE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor


    Original     		PDF KSE800/801/802/803 KSE700/701/702/703 O-126 KSE800/801 KSE802/803 KSE802/803 KSE800 KSE800S transistor k 702 TRANSISTOR S 802

    Untitled

    Abstract: No abstract text available
    Text: Solid State Remote Power Controller E-1048-7. Description The E-T-A Solid State Remote Power Controller E-1048-7. is a transistorised switching device providing both protection and signalisation. It is suitable for all applications where the capabilities


    Original     		PDF E-1048-7. 17plus 46244-A6 23-P10-Si 63-P10-Si

    702 y TRANSISTOR

    Abstract: JE701 JE700 702 P TRANSISTOR je 701
    Text: r n r e n i maiml MJE700/701 /702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 lc= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to M JE 800/801/802/803 ABSOLUTE MAXIMUM RATINGS C haracteristic


    OCR Scan     		PDF MJE700/701 MJE700/701 MJE702/703 702 y TRANSISTOR JE701 JE700 702 P TRANSISTOR je 701

    702 y TRANSISTOR

    Abstract: KSE800
    Text: PNP EPITAXIAL KSE700/701 /702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @lc= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BAS E-EMITTER RESISTORS * Complement to KSE800/801/802/803 ABSOLUTE MAXIMUM RATINGS C haracteristic


    OCR Scan     		PDF KSE700/701 KSE800/801/802/803 KSE700/701 KSE702/703 702 y TRANSISTOR KSE800

    bd437 siemens

    Abstract: transistor d437 D437 transistor bd 439
    Text: ESC D • ôSBSbOS QQQ43b3 4 M S I E 6 • -h ' z i -H NPN Silicon Epibase Transistors ' BD 433 BD 435 0 -BD 437 BD 439 BD 441 SIEMENS AKTIENGESELLSCHAF The transistors BD 4 3 3 , BO 4 3 5 , BD 4 3 7 , BD 4 3 9 , and BD 441 are NPN silicon epibase


    OCR Scan     		PDF QQQ43b3 fi235b05 BD433 BD439 BD441 BD437. BD433. BD433, BD435, bd437 siemens transistor d437 D437 transistor bd 439

    EL 14v 4c

    Abstract: z06m Q62702-D98 transistor 1B transistor 7g BDY39 Transistor bdy 11
    Text: N P N -T ran sisto r fü r leistungsstarke N F -E ndstufen BDY 39 BDY 39 ist ein einfachdiffundierter NPN -Silizium -Transistor im Gehäuse 3 A 2 DIN 41 872 ähnlich T O -3 . Der Kollektor ¡st m it dem Gehäuse elektrisch verbunden. Der Transistor ist besonders für den Einsatz in leistungsstarken NF-Endstufen und in stabilisierten Netzgeräten


    OCR Scan     		PDF Q62702-D98-V1 Q62702-D98-V2 Q62702-D98 Q62901-B11â Q62901-B EL 14v 4c z06m transistor 1B transistor 7g BDY39 Transistor bdy 11

    JE802

    Abstract: MJE802 transistor tic 701 MJE800 MJE101 transistor mje802 MJE801 MJE803 MJE702 MJE703
    Text: MJE700thru MJE703 PNP/MJE800 thru MJE803 NPN continued E L E C T R IC A L C H A R A C T E R IS T IC S (T q = 25°C unless otherwise noted) | Characteristic O F F C H A R A C T E R IS T IC S Collector-Emitter Breakdown VoltageM) (1C * 50 m Adc , \ q « 0)


    OCR Scan     		PDF MJE700thru MJE703 PNP/MJE800 MJE803 MJE700, MJE701, MJE800. MJE801 MJE702, MJE703, JE802 MJE802 transistor tic 701 MJE800 MJE101 transistor mje802 MJE702

    MJE801

    Abstract: MJE802 JE700 MJE703 je802 MJE800 MJE803 transistor mje802 TRANSISTOR JC 515 MJE701
    Text: MJE700 thru MJE703 PNP SILICON MJE800 th,uMJE803 NPN 4.0 AMPERE PLASTIC MEDIUM-POW ER C O M PLEM EN T A R Y SILIC O N T R A N SIST O R S . . . designed to replace discrete driver and o u tp u t stages in co m p le ­ m entary a u d io am plifier applications.


    OCR Scan     		PDF MJE700 MJE703 MJE800 MJE803 MJE701 MJE801 MJE702 MJE802 MJE803 ISeeAN-415) JE700 je802 transistor mje802 TRANSISTOR JC 515

    OPB814

    Abstract: OP8813 transistor k 425 OPB813S10 OPB817 C1969 MST6120 e/H21A1
    Text: ÖUALITY T E C H N O L O G I E S CORP QUALITY TECHNOLOGIES S7E D 7MbböSl QQQ3b53 1 SLOTTED TRANSISTOR OPTOSWITCHES MST6XXX MST8XXX MST7XXX MST9XXX PACKAGE TYPES liL E D TYPE 6 E DESCRIPTION E The MSTXXXX series of optoswitohes is designed to allow the user maximum flexibility in his application.


    OCR Scan     		PDF QQQ3b53 C1988 C1990 OPB814 OP8813 transistor k 425 OPB813S10 OPB817 C1969 MST6120 e/H21A1

    TRANSISTOR SMD MARKING CODE 702

    Abstract: 702 TRANSISTOR smd 702 TRANSISTOR smd SOT23 TRANSISTOR SMD 702 N 702 y smd TRANSISTOR 702 N smd transistor SMD transistor marking 702 702 transistor smd code 702 L TRANSISTOR smd 70.2 TRANSISTOR smd
    Text: Central S e m ic o n d u c to r C o rp . NEW PRODUCT ANNOUNCEMENT 2N7002 SMD Power MOSFET % SOT-23 Case DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process. This device can be utilized in the computer, telecommunications


    OCR Scan     		PDF 2N7002 OT-23 2N7002 CSEMS002 2N7002PA TRANSISTOR SMD MARKING CODE 702 702 TRANSISTOR smd 702 TRANSISTOR smd SOT23 TRANSISTOR SMD 702 N 702 y smd TRANSISTOR 702 N smd transistor SMD transistor marking 702 702 transistor smd code 702 L TRANSISTOR smd 70.2 TRANSISTOR smd

    DTC144WKA ROHM BY SMT

    Abstract: DTC144 DTC144WU dtC144 transistor
    Text: h 7 > V \X £ /'Transistors DTC144 WE/DTC144 WUA/DTC144 WKA DTC144WE/DTC144WU A/DTC144WKA Digital Transistors Includes Resistors h7>y Z ' f y ^-/Transistor Switch fl.Jg-^-;±EÜ]/Dimensions (Unit : mm) • w * 1) A 'i'77 :xffl<7)iêjjî;£p*3jK LT i'-S/c


    OCR Scan     		PDF DTC144 WE/DTC144 WUA/DTC144 DTC144WE/DTC144WU /DTC144WKA DTC144W DTC144WKA ROHM BY SMT DTC144WU dtC144 transistor

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET PHOTOCOUPLER PS2702-1 ,PS2702-2,PS2702-4 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR SOP MULTI PHOTOCOUPLER SERIES nepoc series DESCRIPTION T he P S 2 7 0 2 -1 , P S 2702-2, P S 2702-4, are o p tica lly co u p le d Isolators c o n ta in in g a G aA s light em ittin g d io d e and an


    OCR Scan     		PDF PS2702-1 PS2702-2 PS2702-4 P11307EJ6V0DS00 2702-1-E 2702-1-F

    ALD1702

    Abstract: No abstract text available
    Text: E A dvanced ALD1702A/ALD1702B ALD1702/ALD1703 L iN E A R D e vic es , In c . 5V RAIL TO RAIL PRECISION OPERATIONAL AMPLIFIER GENERAL DESCRIPTION FEATURES The ALD1702/ALD1703 is a mqnqlittiic operational amplifier intended primarily for a wide range of analog applications in +5V single power


    OCR Scan     		PDF ALD1702A/ALD1702B ALD1702/ALD1703 ALD1702/ALD1703 400QpF 02A/ALD1702B 702/ALD1703 ALD1702

    2SC4775

    Abstract: 701b7 702 P TRANSISTOR 702 y TRANSISTOR 2SC4776M
    Text: h ~7> V 7 2 /T ra n s is to rs 2S C 4775/2S C 4776M /2S C 4777/2S C 4778 2 S C 4 7 7 5 /2 S C 4 7 7 6 M x t: * * y 7 7“U•-*% NPN y 1J □ > h7 > y 7 £ 2 3 Q 4 7 7 7 /2 S C 4 7 7 8 Epitaxial Planar NPN Silicon Transistor - « 'J 'O T * M /G e n e r a l Small Signal Amp.


    OCR Scan     		PDF 4775/2S 4776M 4777/2S 2SC4775 701b7 702 P TRANSISTOR 702 y TRANSISTOR 2SC4776M

    blv 33 transistor

    Abstract: BLV25 rf 2222 vp1020 multilayer
    Text: N AMER PHILIPS/DISCRE TE bTE » • bbS3<i31 ÜÜEflc Mcl l'il BLV25 I V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily for use in v.h.f.-f.m . broadcast transmitters. Features: • internally matched input for wideband operation and high power gain;


    OCR Scan     		PDF BLV25 blv 33 transistor BLV25 rf 2222 vp1020 multilayer

    bd132

    Abstract: transistor ALG 20
    Text: BD132 _ J V _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131. QUICK REFERENCE DATA Collector-base voltage open emitter


    OCR Scan     		PDF BD132 OT-32 BD131. bbS3T31 0D34251 BD131 BD132 bb53T31 transistor ALG 20

    transistor h44

    Abstract: BD132 PNP POWER TRANSISTOR SOT-32 BD131 NPN POWER TRANSISTOR SOT-32
    Text: BD132 _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope fo r general purpose, medium power applications. N-P-N complement is BD131. QUICK REFERENCE D A T A Collector-base voltage open em itter Collector-em itter voltage (open base)


    OCR Scan     		PDF BD132 OT-32 BD131. O-126 OT-32) 00342SM transistor h44 BD132 PNP POWER TRANSISTOR SOT-32 BD131 NPN POWER TRANSISTOR SOT-32

    k72 transistor sot 23

    Abstract: transistor marking s72 k72 sot-23 transistor s72 k72 sot 23 k72 transistor S72 transistor S72 marking 702 TRANSISTOR sot-23 K72 SOT23
    Text: 2N7002-01 VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features Low On-Resistance: 2.5Q Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage SOT-23 ~ *\ : h - A TOP VIEW


    OCR Scan     		PDF 2N7002-01 OT-23, MIL-STD-202, OT-23 300ns, DS30026 2N7002-01 k72 transistor sot 23 transistor marking s72 k72 sot-23 transistor s72 k72 sot 23 k72 transistor S72 transistor S72 marking 702 TRANSISTOR sot-23 K72 SOT23

    2SB945

    Abstract: No abstract text available
    Text: Power Transistors 2SB945 2SB945 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD127Q . *-* U n it mm 4 .¿m ax. 10-2max. • Features 2.9 max. • L ow c o lle c to r -e m itte r s a tu ra tio n v o lta g e V ce <ssd


    OCR Scan     		PDF 2SB945 2SD127Q 2SB951/A) 132a52 2SB945

    BUW58

    Abstract: leistungstransistoren Q62702 Q62901-B11-A Q62901-B50 U110 BUW57 ES1010 KT 117
    Text: BUY 57 BUY 58 BUY 73 D re ifa c h d iffu n d ie rte N P N -S iliziu m Leistungstransistoren BUY 57, BUY 58 und BUY 73 sind dreifach-diffundierte NPN-Silizium-Leistungstransistoren im Gehäuse 3 A2 DIN 41 872 T O -3 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden.


    OCR Scan     		PDF Q62702-U109 Q62702â Q62702-U124 Q62901-B11-A Q62901-B50 BUW58 leistungstransistoren Q62702 Q62901-B11-A Q62901-B50 U110 BUW57 ES1010 KT 117

    Untitled

    Abstract: No abstract text available
    Text: _/V_ BDV92 BDV94 BDV96 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P epitaxial base power transistors in the plastic SOT-93 envelope. These transistors are intended for use in audio output stages and general amplifier and switching applications.


    OCR Scan     		PDF BDV92 BDV94 BDV96 OT-93 BDV91, BDV93 BDV95.

    Untitled

    Abstract: No abstract text available
    Text: NPN Silicon Switching Transistors • • • BSS 79 BSS 81 High DC current gain Low collector-emitter saturation voltage Complementary types: B S S 80, B S S 82 PNP Type BSS BSS BSS BSS 79 79 81 81 B C B C Marking Ordering code for versions in bulk Ordering code for


    OCR Scan     		PDF Q62702-S403 Q62702-S402 Q62702-S420 Q62702-S419 Q62702-S503 Q62702-S501 Q62702-S555 Q62702-S559 BSS79 BSS81