702 P TRANSISTOR Search Results

702 P TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

702 P TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
702 y TRANSISTOR Abstract: 702 Z TRANSISTOR transistor marking 702 application marking 702 FAIRCHILD ic 701 Text: KSE700/701/702/703 KSE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to KSE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor	Original	KSE700/701/702/703 KSE800/801/802/803 O-126 KSE700/701 KSE702/703 KSE703 KSE703S 702 y TRANSISTOR 702 Z TRANSISTOR transistor marking 702 application marking 702 FAIRCHILD ic 701	PDF
702 A TRANSISTOR Abstract: TRansistor 701 702 P TRANSISTOR Text: MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor	Original	MJE700/701/702/703 MJE800/801/802/803 O-126 MJE700/701 MJE702/703 MJE703STU 702 A TRANSISTOR TRansistor 701 702 P TRANSISTOR	PDF
Untitled Abstract: No abstract text available Text: KSE700/701/702/703 KSE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to KSE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor	Original	KSE700/701/702/703 KSE800/801/802/803 O-126 KSE700/701 KSE702/703	PDF
transistor H 802 Abstract: No abstract text available Text: KSE800/801/802/803 KSE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to KSE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor	Original	KSE800/801/802/803 KSE700/701/702/703 O-126 KSE800/801 KSE802/803 KSE802/803 transistor H 802	PDF
transistor H 802 Abstract: 702 TRANSISTOR npn 702 P TRANSISTOR obsolete ic cross reference 702 Fairchild Text: MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to MJE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor	Original	MJE800/801/802/803 MJE700/701/702/703 O-126 MJE800/801 MJE802/803 MJE802/803 E800STU transistor H 802 702 TRANSISTOR npn 702 P TRANSISTOR obsolete ic cross reference 702 Fairchild	PDF
MJE800 Abstract: TRANSISTOR S 802 MJE800/801/803 equivalent Text: MJE800/801/802/803 MJE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to MJE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor	Original	MJE800/801/802/803 MJE700/701/702/703 O-126 MJE800/801 MJE802/803 MJE802/803 O-126 MJE802STU MJE800 TRANSISTOR S 802 MJE800/801/803 equivalent	PDF
transistor k 702 Abstract: TRANSISTOR S 802 kse800 Text: KSE800/801/802/803 KSE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to KSE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor	Original	KSE800/801/802/803 KSE700/701/702/703 O-126 KSE800/801 KSE802/803 KSE802/803 KSE800 KSE800S transistor k 702 TRANSISTOR S 802	PDF
2N5927 JAN Abstract: No abstract text available Text: BIG IDEAS IN PowerTech big po w er ” • 120 AMPERES JAN T X 2 N 5 9 2 7 P T - 700 P T - "702 SILICON NPN TRANSISTOR FEATURES: V c E s a t . V BE 0.75 V @ 70 A h p ^ . 5 min @ 120 A 1.5 V @ 70 A t j .	OCR Scan	O-114 100KHz 2N5927 JAN	PDF
702 TRANSISTOR Abstract: 702 P TRANSISTOR MJE700 702 Z TRANSISTOR transistor 702 transistor k 702 BVCEO 2000 TRansistor 701 Text: mr c r i i h a im l MJE700/701 /702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 lc= -1.5 and -2.0A DC MO NO LITHIC CONSTRUCTION W ITH BUILT-IN BASE-EMITTER RESISTORS • C o m p le m e n t to M J E 8 0 0 /8 0 1 /8 0 2 /8 0 3 ABSOLUTE M AXIMUM RATINGS	OCR Scan	MJE700/701 MJE800/801/802/803 MJE702/703 702 TRANSISTOR 702 P TRANSISTOR MJE700 702 Z TRANSISTOR transistor 702 transistor k 702 BVCEO 2000 TRansistor 701	PDF
702 P TRANSISTOR Abstract: LTA 702 TRansistor L 701 LTA 703 S 701 transistor 702 transistor k/702 P transistor Text: KSE700/701/702/703 PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MINhFE=750 @ lc= -1.5 and -2 .0 A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • Complement to KSE800/801/802/803 ABSOLUTE MAXIMUM RATINGS -	OCR Scan	KSE700/701/702/703 KSE800/801/802/803 KSE700/701 702 P TRANSISTOR LTA 702 TRansistor L 701 LTA 703 S 701 transistor 702 transistor k/702 P transistor	PDF
sot 23 transistor 70.2 Abstract: LTA 702 N k/702 P transistor Text: S A MS U N G SEMICONDUCTOR INC 14ÉD 1 7 ei b 4 : m 2 0007704 S NpN EPITAXIAL M JE700/701/702/703 SILICON DARLINGTON TRANSISTOR T ~ ? :r - 3 HIGH DC CURRENT GAIN MIN hFE—750 @ lc s - 1 .5 and -2 .0 A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS	OCR Scan	JE700/701/702/703 MJE800/801/802/803 MJE700/701 MJE702/703 GQG77fe sot 23 transistor 70.2 LTA 702 N k/702 P transistor	PDF
702 y TRANSISTOR Abstract: JE701 JE700 702 P TRANSISTOR je 701 Text: r n r e n i maiml MJE700/701 /702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 lc= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to M JE 800/801/802/803 ABSOLUTE MAXIMUM RATINGS C haracteristic	OCR Scan	MJE700/701 MJE700/701 MJE702/703 702 y TRANSISTOR JE701 JE700 702 P TRANSISTOR je 701	PDF
bd437 siemens Abstract: transistor d437 D437 transistor bd 439 Text: ESC D • ôSBSbOS QQQ43b3 4 M S I E 6 • -h ' z i -H NPN Silicon Epibase Transistors ' BD 433 BD 435 0 -BD 437 BD 439 BD 441 SIEMENS AKTIENGESELLSCHAF The transistors BD 4 3 3 , BO 4 3 5 , BD 4 3 7 , BD 4 3 9 , and BD 441 are NPN silicon epibase	OCR Scan	QQQ43b3 fi235b05 BD433 BD439 BD441 BD437. BD433. BD433, BD435, bd437 siemens transistor d437 D437 transistor bd 439	PDF
702 Z TRANSISTOR Abstract: 702 TRANSISTOR npn 702 TRANSISTOR S6020 TL MJE2955T 702 pnp TRANSISTOR S 802 4A complementary transistor TRansistor 701 Text: SAMSUNG S E M I C ON D U CT OR INC i 4É D ¡ 7*11,4142 0 0 0 7 7 0 4 5 NpN EPITAXIAL MJE700/701/702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE—750 @ IC -1 .5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS	OCR Scan	MJE700/701/702/703 MJE800/801/802/803 MJE700/701 MJE702/703 O-126 702 Z TRANSISTOR 702 TRANSISTOR npn 702 TRANSISTOR S6020 TL MJE2955T 702 pnp TRANSISTOR S 802 4A complementary transistor TRansistor 701	PDF

EL 14v 4c Abstract: z06m Q62702-D98 transistor 1B transistor 7g BDY39 Transistor bdy 11 Text: N P N -T ran sisto r fü r leistungsstarke N F -E ndstufen BDY 39 BDY 39 ist ein einfachdiffundierter NPN -Silizium -Transistor im Gehäuse 3 A 2 DIN 41 872 ähnlich T O -3 . Der Kollektor ¡st m it dem Gehäuse elektrisch verbunden. Der Transistor ist besonders für den Einsatz in leistungsstarken NF-Endstufen und in stabilisierten Netzgeräten	OCR Scan	Q62702-D98-V1 Q62702-D98-V2 Q62702-D98 Q62901-B11â Q62901-B EL 14v 4c z06m transistor 1B transistor 7g BDY39 Transistor bdy 11	PDF
SAS SOT23 Abstract: SAs SOT-23 marking BSS100 BSS123 marking BSs sot23 SOT-23 marking AFE MARKING code VG Text: BSS 100 BSS 123 SIPMOS Small-Signal Transistors lD - 100 V = 0 .2 2 /0 .1 7 A ^ D S o n = »os 6 -0 TO -92 (BSS 100) SOT-23 (BSS 123) £3 • N channel • Enhancem ent mode • Packages: TO-92, D SOT-23 ’ ) Type Marking Ordering code for version on	OCR Scan	OT-23 SAS SOT23 SAs SOT-23 marking BSS100 BSS123 marking BSs sot23 SOT-23 marking AFE MARKING code VG	PDF
ic bsp 350 Abstract: A 89 E bss89 sot-223 KA marking code sot 89 marking code s0 BSS87 bsp 87 Text: SIEMENS SIPMOS Small-Signal Transistors VDS /q ^ D S o n BSP 89 BSS 87 BSS 89 = 240 V = 0.29 . . . 0.34 A = 6 -0 Q • N channel • E nhancem ent mode • Packages: SOT-223, SOT-89, TO-92 ') Type Marking Ordering code for version in for version on for version on for version in	OCR Scan	OT-223, OT-89, 702-S 62702-S E6288: E6325: ic bsp 350 A 89 E bss89 sot-223 KA marking code sot 89 marking code s0 BSS87 bsp 87	PDF
JE802 Abstract: MJE802 transistor tic 701 MJE800 MJE101 transistor mje802 MJE801 MJE803 MJE702 MJE703 Text: MJE700thru MJE703 PNP/MJE800 thru MJE803 NPN continued E L E C T R IC A L C H A R A C T E R IS T IC S (T q = 25°C unless otherwise noted) \| Characteristic O F F C H A R A C T E R IS T IC S Collector-Emitter Breakdown VoltageM) (1C * 50 m Adc , \ q « 0)	OCR Scan	MJE700thru MJE703 PNP/MJE800 MJE803 MJE700, MJE701, MJE800. MJE801 MJE702, MJE703, JE802 MJE802 transistor tic 701 MJE800 MJE101 transistor mje802 MJE702	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE bTE bbS3^31 D0Efle 4cJ m BLV25 D IAPX V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily for use in v.h.f.-f.m. broadcast transmitters. Features: • internally matched input fo r wideband operation and high power gain;	OCR Scan	BLV25	PDF
OPB814 Abstract: OP8813 transistor k 425 OPB813S10 OPB817 C1969 MST6120 e/H21A1 Text: ÖUALITY T E C H N O L O G I E S CORP QUALITY TECHNOLOGIES S7E D 7MbböSl QQQ3b53 1 SLOTTED TRANSISTOR OPTOSWITCHES MST6XXX MST8XXX MST7XXX MST9XXX PACKAGE TYPES liL E D TYPE 6 E DESCRIPTION E The MSTXXXX series of optoswitohes is designed to allow the user maximum flexibility in his application.	OCR Scan	QQQ3b53 C1988 C1990 OPB814 OP8813 transistor k 425 OPB813S10 OPB817 C1969 MST6120 e/H21A1	PDF
power invertor Abstract: RQMB040 RQ 4 ABB V-250 dc to ac invertor rk 12 e RK732 RQ04 12 vdc to 220 ac invertor abb combiflex Text: All» Catalogue RK 73-11 E AÇEABROWN6ÜVER1 Edition 1 June 1975 File R, Part 1 ABB Relays Direct voltage convertor Type RQMA 100 • utilised fo r a highly efficient trans form ation o f a higher d.c, voltage to a lower d,c. voltage suitable for supply	OCR Scan	26-AC 22B-AD S-721 power invertor RQMB040 RQ 4 ABB V-250 dc to ac invertor rk 12 e RK732 RQ04 12 vdc to 220 ac invertor abb combiflex	PDF
BR101 Abstract: bry39 philips bry39 PH 40 E 702 sot23 2N4870 BRY62 Type Transistors 702 Text: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal transistors PNPN DEVICES OVERVIEW leaded surface-m ount TO -72 TO-92 SOT23 SOT143 BR101 BRY39 BRY56 2N4870/PH 2N6027/PH 2N6028/PH BRY61 BRY62	OCR Scan	BR101 BRY39 BRY56 2N4870/PH 2N6027/PH 2N6028/PH BRY61 OT143 BRY62 philips bry39 PH 40 E 702 sot23 2N4870 BRY62 Type Transistors 702	PDF
MJE801 Abstract: MJE802 JE700 MJE703 je802 MJE800 MJE803 transistor mje802 TRANSISTOR JC 515 MJE701 Text: MJE700 thru MJE703 PNP SILICON MJE800 th,uMJE803 NPN 4.0 AMPERE PLASTIC MEDIUM-POW ER C O M PLEM EN T A R Y SILIC O N T R A N SIST O R S . . . designed to replace discrete driver and o u tp u t stages in co m p le m entary a u d io am plifier applications.	OCR Scan	MJE700 MJE703 MJE800 MJE803 MJE701 MJE801 MJE702 MJE802 MJE803 ISeeAN-415) JE700 je802 transistor mje802 TRANSISTOR JC 515	PDF
blv 33 transistor Abstract: BLV25 rf 2222 vp1020 multilayer Text: N AMER PHILIPS/DISCRE TE bTE » • bbS3<i31 ÜÜEflc Mcl l'il BLV25 I V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily for use in v.h.f.-f.m . broadcast transmitters. Features: • internally matched input for wideband operation and high power gain;	OCR Scan	BLV25 blv 33 transistor BLV25 rf 2222 vp1020 multilayer	PDF

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702 P TRANSISTOR Search Results

702 P TRANSISTOR Result Highlights (5)

702 P TRANSISTOR Datasheets Context Search

702 y TRANSISTOR

702 A TRANSISTOR

Untitled

transistor H 802

transistor H 802

MJE800

transistor k 702

2N5927 JAN

702 TRANSISTOR

702 P TRANSISTOR

sot 23 transistor 70.2

702 y TRANSISTOR

bd437 siemens

702 Z TRANSISTOR

EL 14v 4c

SAS SOT23

ic bsp 350

JE802

Untitled

OPB814

power invertor

BR101

MJE801

blv 33 transistor