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    700V 7.5A MOSFET Search Results

    700V 7.5A MOSFET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    700V 7.5A MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    350v ZENER DIODE

    Abstract: STW9NC70Z
    Text: STW9NC70Z N-CHANNEL 700V - 0.90 Ω - 7.5A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW9NC70Z VDSS RDS on ID 700 V < 1.2 Ω 7.5A TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF STW9NC70Z O-247 350v ZENER DIODE STW9NC70Z

    STW9NC70Z

    Abstract: TL 078
    Text: STW9NC70Z N-CHANNEL 700V - 0.90 Ω - 7.5A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW9NC70Z • ■ ■ ■ ■ VDSS RDS on ID 700 V < 1.2 Ω 7.5A TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED


    Original     		PDF STW9NC70Z O-247 STW9NC70Z TL 078

    STW9NC70Z

    Abstract: No abstract text available
    Text: STW9NC70Z N-CHANNEL 700V - 0.90 Ω - 7.5A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW9NC70Z • ■ ■ ■ ■ VDSS RDS on ID 700 V < 1.2 Ω 7.5A TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED


    Original     		PDF STW9NC70Z O-247 STW9NC70Z

    w9nk70

    Abstract: p9nk70zfp w9nk70z p9nk70
    Text: STP9NK70Z - STP9NK70ZFP STB9NK70Z - STB9NK70Z-1 - STW9NK70Z N-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STP9NK70Z STP9NK70ZFP STB9NK70Z STB9NK70Z-1 STW9NK70Z • ■ ■ ■ ■ ■ ■ VDSS RDS on


    Original     		PDF STP9NK70Z STP9NK70ZFP STB9NK70Z STB9NK70Z-1 STW9NK70Z O-220/FP/D2PAK/I2PAK/TO-247 STP9NK70Z STB9NK70Z STB9NK70Z-1 w9nk70 p9nk70zfp w9nk70z p9nk70

    w9nk70z

    Abstract: P9NK70Z p9nk70zfp b9nk70z STP9NK70Z P9NK70 w9nk70z equivalent w9nk70 B9NK70Z-1 STW9NK70Z
    Text: STP9NK70Z - STP9NK70ZFP STB9NK70Z - STB9NK70Z-1 - STW9NK70Z N-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STP9NK70Z STP9NK70ZFP STB9NK70Z STB9NK70Z-1 STW9NK70Z • ■ ■ ■ ■ ■ ■ VDSS RDS on


    Original     		PDF STP9NK70Z STP9NK70ZFP STB9NK70Z STB9NK70Z-1 STW9NK70Z O-220/FP/D2PAK/I2PAK/TO-247 STP9NK70Z STB9NK70Z STB9NK70Z-1 w9nk70z P9NK70Z p9nk70zfp b9nk70z P9NK70 w9nk70z equivalent w9nk70 B9NK70Z-1 STW9NK70Z

    w9nk70z

    Abstract: P9NK70Z P9NK70ZFP B9NK70Z w9nk70z equivalent P9NK70 w9nk70 STP9NK70Z STW9NK70Z STP9NK70ZFP
    Text: STP9NK70Z - STP9NK70ZFP STB9NK70Z - STB9NK70Z-1 - STW9NK70Z N-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STP9NK70Z STP9NK70ZFP STB9NK70Z STB9NK70Z-1 STW9NK70Z • ■ ■ ■ ■ ■ ■ VDSS R DS on


    Original     		PDF STP9NK70Z STP9NK70ZFP STB9NK70Z STB9NK70Z-1 STW9NK70Z O-220/FP/D2PAK/I2PAK/TO-247 STP9NK70Z STB9NK70Z STB9NK70Z-1 w9nk70z P9NK70Z P9NK70ZFP B9NK70Z w9nk70z equivalent P9NK70 w9nk70 STW9NK70Z STP9NK70ZFP

    700v 5A mosfet

    Abstract: 700v 7.5A mosfet 5A 700V MOSFET 700v 4A mosfet
    Text: SSFP9N70 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 700V Simple Drive Requirement ID25 = 7.5A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability


    Original     		PDF SSFP9N70 00A/s di/dt200A/S width300S; 700v 5A mosfet 700v 7.5A mosfet 5A 700V MOSFET 700v 4A mosfet

    w9nk70z equivalent

    Abstract: w9nk70z P9NK70Z B9NK70Z-1 w9nk70
    Text: STP9NK70Z - STP9NK70ZFP STB9NK70Z - STB9NK70Z-1 - STW9NK70Z N-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STP9NK70Z STP9NK70ZFP STB9NK70Z STB9NK70Z-1 STW9NK70Z • ■ ■ ■ ■ ■ ■ VDSS R DS on


    Original     		PDF STP9NK70Z STP9NK70ZFP STB9NK70Z STB9NK70Z-1 STW9NK70Z O-220/FP/D2PAK/I2PAK/TO-247 STP9NK70Z STB9NK70Z STB9NK70Z-1 w9nk70z equivalent w9nk70z P9NK70Z B9NK70Z-1 w9nk70

    8N65

    Abstract: 700v 7.5A mosfet F 8N65 20/tubes
    Text: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN8N65FP Spec. No. : C727FP Issued Date : 2009.06.23 Revised Date : Page No. : 1/9 BVDSS : 700V @Tj=150℃ RDS ON : 0.95Ω(typ.) ID : 7.5A Description The MTN8N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best


    Original     		PDF MTN8N65FP C727FP MTN8N65FP O-220FP UL94V-0 8N65 700v 7.5A mosfet F 8N65 20/tubes

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 15N70 Preliminary Power MOSFET 15A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 15N70 is an N-Channel enhancement MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. It


    Original     		PDF 15N70 15N70 15N70L-T3P-T 15N70G-T3P-T QW-R502-839

    Untitled

    Abstract: No abstract text available
    Text: ICE11N70 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 11A Max V BR DSS rDS(ON) ID = 250uA 700V Min VGS = 10V 0.20Ω Typ Qg VDS = 480V 85nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE11N70 250uA O-220 100us 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01

    Untitled

    Abstract: No abstract text available
    Text: ICE11N70FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 11A Max V BR DSS rDS(ON) ID = 250uA 700V Min VGS = 10V 0.20Ω Typ Qg VDS = 480V 85nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE11N70FP 250uA O-220 100us 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N70-Q Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET 1  DESCRIPTION TO-220F The UTC 10N70-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a


    Original     		PDF 10N70-Q O-220F 10N70-Q O-220F1 QW-R502-967.

    6.8 B2 zener

    Abstract: No abstract text available
    Text: STP7NC70Z - STP7NC70ZFP STB7NC70Z-1 N-CHANNEL 700V - 1Ω - 6.8A TO-220/TO-220FP/I PAK Zener-Protected PowerMESH III MOSFET PRELIMINARY DATA TYPE • ■ ■ ■ ■ VDSS RDS on ID STP7NC70Z/FP 700V < 1.2Ω 6.8 A STB7NC70Z-1 700V < 1.2Ω 6.8 A TYPICAL RDS(on) = 1Ω


    Original     		PDF O-220/TO-220FP/I STP7NC70Z/FP STB7NC70Z-1 STP7NC70Z STP7NC70ZFP O-220 O-220FP 6.8 B2 zener

    AOB15S60

    Abstract: No abstract text available
    Text: AOT15S60/AOB15S60/AOTF15S60 600V 15A α MOS TM Power Transistor General Description Product Summary The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.


    Original     		PDF AOT15S60/AOB15S60/AOTF15S60 AOT15S60& AOB15S60 AOTF15S60 AOT15S60L AOB15S60L AOTF15S60L O-220 O-263 O-220S60 AOB15S60

    Untitled

    Abstract: No abstract text available
    Text: AOV15S60 600V 12A α MOS TM Power Transistor General Description Product Summary The AOV15S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.


    Original     		PDF AOV15S60 AOV15S60

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQA15N70 FEATURES BVDSS = 700V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 70nC Typ. • Extended Safe Operating Area


    Original     		PDF FQA15N70

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    Untitled

    Abstract: No abstract text available
    Text: AOK53S60 600V 53A α MOS TM Power Transistor General Description Product Summary The AOK53S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.


    Original     		PDF AOK53S60 AOK53S60 AOK53S60L

    Untitled

    Abstract: No abstract text available
    Text: AOK53S60 600V 53A α MOS TM Power Transistor General Description Product Summary The AOK53S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.


    Original     		PDF AOK53S60 AOK53S60 AOK53S60L

    AC 440V Motor Speed Controller igbt circuit

    Abstract: 220v DC MOTOR SPEED CONTROLLER EMI filter 20a 220v 400hz 600V igbt dc to dc boost converter AC motor current limiter board 220v dc motor speed control circuit SMCS6M40-10-1 SMCT6M40-10-1 SMC6G25-60-1 SMCS6G070-060-1
    Text: Motor Controllers Sensitron • 221 West Industry Court · Deer Park, NY 11729-4681 · Phone 631 586 7600 · Fax (631) 242 9798 · World Wide Web - www.sensitron.com · E-mail - sales@sensitron.com 146-1109 Total Motion Control Solutions www.sensitron.com/motorcontrollers.htm


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQA15N70 FEATURES BV dss = 700V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 70nC Typ. •


    OCR Scan     		PDF FQA15N70

    FQA15N70

    Abstract: 700v 5A mosfet
    Text: QFET N-CHANNEL FQA15N70 FEATURES BV qss = 700V Advanced New Design R DS ON Avalanche Rugged Technology = 0.56Î2 lD = 15A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 70nC (Typ.)


    OCR Scan     		PDF FQA15N70 FQA15N70 700v 5A mosfet

    SSM6N70

    Abstract: No abstract text available
    Text: 7 9 6 4 142 T fi DE § 7 ^ ^ 4 1 4 5 S AMSUN6 SEM I CONDUCTOR. I H C 0 DDS3 S4 7 98D | 05324 D N-CHANNEL POWER MOSFETS SSM6N70 FEATURES • Low RDS on at high voltage • Improved inductive ruggedness Excellent high voltage stability Fast switching times


    OCR Scan     		PDF SSM6N70 SSM6N70