350v ZENER DIODE
Abstract: STW9NC70Z
Text: STW9NC70Z N-CHANNEL 700V - 0.90 Ω - 7.5A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW9NC70Z VDSS RDS on ID 700 V < 1.2 Ω 7.5A TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES
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STW9NC70Z
O-247
350v ZENER DIODE
STW9NC70Z
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STW9NC70Z
Abstract: TL 078
Text: STW9NC70Z N-CHANNEL 700V - 0.90 Ω - 7.5A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW9NC70Z • ■ ■ ■ ■ VDSS RDS on ID 700 V < 1.2 Ω 7.5A TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED
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STW9NC70Z
O-247
STW9NC70Z
TL 078
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STW9NC70Z
Abstract: No abstract text available
Text: STW9NC70Z N-CHANNEL 700V - 0.90 Ω - 7.5A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW9NC70Z • ■ ■ ■ ■ VDSS RDS on ID 700 V < 1.2 Ω 7.5A TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED
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STW9NC70Z
O-247
STW9NC70Z
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w9nk70
Abstract: p9nk70zfp w9nk70z p9nk70
Text: STP9NK70Z - STP9NK70ZFP STB9NK70Z - STB9NK70Z-1 - STW9NK70Z N-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STP9NK70Z STP9NK70ZFP STB9NK70Z STB9NK70Z-1 STW9NK70Z • ■ ■ ■ ■ ■ ■ VDSS RDS on
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STP9NK70Z
STP9NK70ZFP
STB9NK70Z
STB9NK70Z-1
STW9NK70Z
O-220/FP/D2PAK/I2PAK/TO-247
STP9NK70Z
STB9NK70Z
STB9NK70Z-1
w9nk70
p9nk70zfp
w9nk70z
p9nk70
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w9nk70z
Abstract: P9NK70Z p9nk70zfp b9nk70z STP9NK70Z P9NK70 w9nk70z equivalent w9nk70 B9NK70Z-1 STW9NK70Z
Text: STP9NK70Z - STP9NK70ZFP STB9NK70Z - STB9NK70Z-1 - STW9NK70Z N-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STP9NK70Z STP9NK70ZFP STB9NK70Z STB9NK70Z-1 STW9NK70Z • ■ ■ ■ ■ ■ ■ VDSS RDS on
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STP9NK70Z
STP9NK70ZFP
STB9NK70Z
STB9NK70Z-1
STW9NK70Z
O-220/FP/D2PAK/I2PAK/TO-247
STP9NK70Z
STB9NK70Z
STB9NK70Z-1
w9nk70z
P9NK70Z
p9nk70zfp
b9nk70z
P9NK70
w9nk70z equivalent
w9nk70
B9NK70Z-1
STW9NK70Z
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w9nk70z
Abstract: P9NK70Z P9NK70ZFP B9NK70Z w9nk70z equivalent P9NK70 w9nk70 STP9NK70Z STW9NK70Z STP9NK70ZFP
Text: STP9NK70Z - STP9NK70ZFP STB9NK70Z - STB9NK70Z-1 - STW9NK70Z N-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STP9NK70Z STP9NK70ZFP STB9NK70Z STB9NK70Z-1 STW9NK70Z • ■ ■ ■ ■ ■ ■ VDSS R DS on
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STP9NK70Z
STP9NK70ZFP
STB9NK70Z
STB9NK70Z-1
STW9NK70Z
O-220/FP/D2PAK/I2PAK/TO-247
STP9NK70Z
STB9NK70Z
STB9NK70Z-1
w9nk70z
P9NK70Z
P9NK70ZFP
B9NK70Z
w9nk70z equivalent
P9NK70
w9nk70
STW9NK70Z
STP9NK70ZFP
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700v 5A mosfet
Abstract: 700v 7.5A mosfet 5A 700V MOSFET 700v 4A mosfet
Text: SSFP9N70 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 700V Simple Drive Requirement ID25 = 7.5A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability
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SSFP9N70
00A/s
di/dt200A/S
width300S;
700v 5A mosfet
700v 7.5A mosfet
5A 700V MOSFET
700v 4A mosfet
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w9nk70z equivalent
Abstract: w9nk70z P9NK70Z B9NK70Z-1 w9nk70
Text: STP9NK70Z - STP9NK70ZFP STB9NK70Z - STB9NK70Z-1 - STW9NK70Z N-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STP9NK70Z STP9NK70ZFP STB9NK70Z STB9NK70Z-1 STW9NK70Z • ■ ■ ■ ■ ■ ■ VDSS R DS on
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STP9NK70Z
STP9NK70ZFP
STB9NK70Z
STB9NK70Z-1
STW9NK70Z
O-220/FP/D2PAK/I2PAK/TO-247
STP9NK70Z
STB9NK70Z
STB9NK70Z-1
w9nk70z equivalent
w9nk70z
P9NK70Z
B9NK70Z-1
w9nk70
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8N65
Abstract: 700v 7.5A mosfet F 8N65 20/tubes
Text: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN8N65FP Spec. No. : C727FP Issued Date : 2009.06.23 Revised Date : Page No. : 1/9 BVDSS : 700V @Tj=150℃ RDS ON : 0.95Ω(typ.) ID : 7.5A Description The MTN8N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best
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MTN8N65FP
C727FP
MTN8N65FP
O-220FP
UL94V-0
8N65
700v 7.5A mosfet
F 8N65
20/tubes
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 15N70 Preliminary Power MOSFET 15A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N70 is an N-Channel enhancement MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. It
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15N70
15N70
15N70L-T3P-T
15N70G-T3P-T
QW-R502-839
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Untitled
Abstract: No abstract text available
Text: ICE11N70 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 11A Max V BR DSS rDS(ON) ID = 250uA 700V Min VGS = 10V 0.20Ω Typ Qg VDS = 480V 85nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability
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ICE11N70
250uA
O-220
100us
0E-06
0E-05
0E-04
0E-03
0E-02
0E-01
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Untitled
Abstract: No abstract text available
Text: ICE11N70FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 11A Max V BR DSS rDS(ON) ID = 250uA 700V Min VGS = 10V 0.20Ω Typ Qg VDS = 480V 85nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability
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ICE11N70FP
250uA
O-220
100us
0E-06
0E-05
0E-04
0E-03
0E-02
0E-01
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N70-Q Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220F The UTC 10N70-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a
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10N70-Q
O-220F
10N70-Q
O-220F1
QW-R502-967.
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6.8 B2 zener
Abstract: No abstract text available
Text: STP7NC70Z - STP7NC70ZFP STB7NC70Z-1 N-CHANNEL 700V - 1Ω - 6.8A TO-220/TO-220FP/I PAK Zener-Protected PowerMESH III MOSFET PRELIMINARY DATA TYPE • ■ ■ ■ ■ VDSS RDS on ID STP7NC70Z/FP 700V < 1.2Ω 6.8 A STB7NC70Z-1 700V < 1.2Ω 6.8 A TYPICAL RDS(on) = 1Ω
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O-220/TO-220FP/I
STP7NC70Z/FP
STB7NC70Z-1
STP7NC70Z
STP7NC70ZFP
O-220
O-220FP
6.8 B2 zener
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AOB15S60
Abstract: No abstract text available
Text: AOT15S60/AOB15S60/AOTF15S60 600V 15A α MOS TM Power Transistor General Description Product Summary The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
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AOT15S60/AOB15S60/AOTF15S60
AOT15S60&
AOB15S60
AOTF15S60
AOT15S60L
AOB15S60L
AOTF15S60L
O-220
O-263
O-220S60
AOB15S60
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Untitled
Abstract: No abstract text available
Text: AOV15S60 600V 12A α MOS TM Power Transistor General Description Product Summary The AOV15S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
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AOV15S60
AOV15S60
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQA15N70 FEATURES BVDSS = 700V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 70nC Typ. • Extended Safe Operating Area
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FQA15N70
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9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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Untitled
Abstract: No abstract text available
Text: AOK53S60 600V 53A α MOS TM Power Transistor General Description Product Summary The AOK53S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
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AOK53S60
AOK53S60
AOK53S60L
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Untitled
Abstract: No abstract text available
Text: AOK53S60 600V 53A α MOS TM Power Transistor General Description Product Summary The AOK53S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
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AOK53S60
AOK53S60
AOK53S60L
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AC 440V Motor Speed Controller igbt circuit
Abstract: 220v DC MOTOR SPEED CONTROLLER EMI filter 20a 220v 400hz 600V igbt dc to dc boost converter AC motor current limiter board 220v dc motor speed control circuit SMCS6M40-10-1 SMCT6M40-10-1 SMC6G25-60-1 SMCS6G070-060-1
Text: Motor Controllers Sensitron • 221 West Industry Court · Deer Park, NY 11729-4681 · Phone 631 586 7600 · Fax (631) 242 9798 · World Wide Web - www.sensitron.com · E-mail - sales@sensitron.com 146-1109 Total Motion Control Solutions www.sensitron.com/motorcontrollers.htm
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQA15N70 FEATURES BV dss = 700V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 70nC Typ. •
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FQA15N70
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FQA15N70
Abstract: 700v 5A mosfet
Text: QFET N-CHANNEL FQA15N70 FEATURES BV qss = 700V Advanced New Design R DS ON Avalanche Rugged Technology = 0.56Î2 lD = 15A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 70nC (Typ.)
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FQA15N70
FQA15N70
700v 5A mosfet
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SSM6N70
Abstract: No abstract text available
Text: 7 9 6 4 142 T fi DE § 7 ^ ^ 4 1 4 5 S AMSUN6 SEM I CONDUCTOR. I H C 0 DDS3 S4 7 98D | 05324 D N-CHANNEL POWER MOSFETS SSM6N70 FEATURES • Low RDS on at high voltage • Improved inductive ruggedness Excellent high voltage stability Fast switching times
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SSM6N70
SSM6N70
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