Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N70K Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N70K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.
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10N70K
10N70K
10N70KL-TF1-T
10N70KG-TF1-T
O-220F1
QW-R502-A69
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Untitled
Abstract: No abstract text available
Text: AOT10T60P/AOB10T60P/AOTF10T60P 600V,10A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology • Low RDS ON • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 700V IDM
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AOT10T60P/AOB10T60P/AOTF10T60P
O-220
O-263
O-220F
AOT10T60P
AOB10T60P
AOTF10T60P
AOT10T60PL
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Untitled
Abstract: No abstract text available
Text: AOW10T60P/AOWF10T60P 600V,10A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology • Low RDS ON • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 700V IDM 40A RDS(ON),max
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AOW10T60P/AOWF10T60P
O-262F
O-262
AOW10T60P
AOWF10T60P
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N70Z Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N70Z is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a
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10N70Z
10N70Z
QW-R502-935
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10N65
Abstract: MOSFET 700V 10A MTN10N65FP mtn10n65
Text: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN10N65FP Spec. No. : C725FP Issued Date : 2009.06.15 Revised Date : Page No. : 1/9 BVDSS : 700V @Tj=150℃ RDS ON : 0.75Ω ID : 10A Description The MTN10N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best
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MTN10N65FP
C725FP
MTN10N65FP
O-220FP
UL94V-0
10N65
MOSFET 700V 10A
mtn10n65
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10N70
Abstract: MOSFET 700V 10A 10N70L mosfet 350v 10A 700v 10A mosfet 10N70L-TF1-T 700V mosfet driver
Text: UNISONIC TECHNOLOGIES CO., LTD 10N70 Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC 10N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a
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10N70
10N70
O-220F
O-220F1
QW-R502-572
MOSFET 700V 10A
10N70L
mosfet 350v 10A
700v 10A mosfet
10N70L-TF1-T
700V mosfet driver
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N70-C Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N70-C is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a
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10N70-C
10N70-C
10N70L-TF3-Tat
QW-R502-A80
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N70 Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC 10N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a
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10N70
10N70
O-220F
O-220F1
QW-R502-572
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary 10N70Z-Q Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N70Z-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a
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10N70Z-Q
10N70Z-Q
10N70ZL-TF1-T
10N70ZG-TF1-T
QW-R502-B20
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Untitled
Abstract: No abstract text available
Text: 10N70 UNISONIC TECHNOLOGIES CO., LTD Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220F The UTC 10N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a
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10N70
O-220F
10N70
O-220F1
QW-R502-572
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N70-Q Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220F The UTC 10N70-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a
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10N70-Q
O-220F
10N70-Q
O-220F1
QW-R502-967.
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Untitled
Abstract: No abstract text available
Text: TSM8N70 700V N-Channel Power MOSFET ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)( )(max) ID (A) 700 0.9 @ VGS =10V 8 General Description The TSM8N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM8N70
ITO-220
TSM8N70
TSM8N70CI
50pcs
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N-Channel
Abstract: MOSFET 700V 10A 700v 4A mosfet 700v 10A mosfet
Text: TSM8N70 700V N-Channel Power MOSFET ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω)(max) ID (A) 700 0.9 @ VGS =10V 8 General Description The TSM8N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM8N70
ITO-220
TSM8N70
TSM8N70CI
50pcs
N-Channel
MOSFET 700V 10A
700v 4A mosfet
700v 10A mosfet
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diode b10
Abstract: MOSFET 700V 10A TSM8N70 700v 4A mosfet 700v 10A mosfet MOSFET 700V 4A
Text: TSM8N70 700V N-Channel Power MOSFET ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 700 0.9 @ VGS =10V 4.6 General Description The TSM8N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM8N70
ITO-220
TSM8N70
TSM8N70CI
50pcs
diode b10
MOSFET 700V 10A
700v 4A mosfet
700v 10A mosfet
MOSFET 700V 4A
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2SK3673-01MR equivalent
Abstract: 2SK3673-01MR 2SK3673 MOSFET 700V 10A MOSFET 700V 4A mosfet 350v 10A 700v 10A mosfet
Text: 2SK3673-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators
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2SK3673-01MR
O-220F
2SK3673-01MR equivalent
2SK3673-01MR
2SK3673
MOSFET 700V 10A
MOSFET 700V 4A
mosfet 350v 10A
700v 10A mosfet
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2SK3673-01MR equivalent
Abstract: MOSFET 700V 10A 2SK3673
Text: 2SK3673-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators
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2SK3673-01MR
O-220F
2SK3673-01MR equivalent
MOSFET 700V 10A
2SK3673
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IXTK20N140
Abstract: No abstract text available
Text: Advance Technical Information IXTK20N140 IXTX20N140 High Voltage Power MOSFETs w/ Extended FBSOA VDSS ID25 = 1400V = 20A Ω < 1Ω RDS on N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS
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IXTK20N140
IXTX20N140
O-264
100ms
20N140
IXTK20N140
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MOSFET 700V 10A
Abstract: 700v 5A mosfet FS10SM-14A
Text: MITSUBISHI Nch POWER MOSFET FS10SM-14A HIGH-SPEED SWITCHING USE FS10SM-14A OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS . 700V
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FS10SM-14A
MOSFET 700V 10A
700v 5A mosfet
FS10SM-14A
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FS10UM-14A
Abstract: MOSFET 700V 10A
Text: MITSUBISHI Nch POWER MOSFET FS10UM-14A HIGH-SPEED SWITCHING USE FS10UM-14A OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 r 1.0 3.8MAX. 0.8 2.54 0.5 2.54 2.6 4.5MAX. 12.5MIN. φ 3.6 q w e wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS . 700V
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FS10UM-14A
O-220
FS10UM-14A
MOSFET 700V 10A
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700v 5A mosfet
Abstract: MOSFET 700V 10A 200v 5A mosfet computer smps circuit N-Channel MOSFET 200v NTE2972 MOSFET nte2972 5A 700V MOSFET MOSFET 30A 700V
Text: NTE2972 MOSFET N–Channel, Enhancement Mode High Speed Switch Applications: D SMPS D DC–DC Converter D Battery Charger D Power Supply of Printer D Copier D HDD, FDD, TV, VCR D Personal Computer Absolute Maximum Ratings: TC = +25°C unless otherwise specified
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NTE2972
700v 5A mosfet
MOSFET 700V 10A
200v 5A mosfet
computer smps circuit
N-Channel MOSFET 200v
NTE2972
MOSFET nte2972
5A 700V MOSFET
MOSFET 30A 700V
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p channel mosfet 10a 20v
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET j FS10SM-14A ! HIGH-SPEED SWITCHING USE FS10SM-14A • VOSS . 700V • ros O N (M A X ) . 1.3Q • Id . 10A
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FS10SM-14A
p channel mosfet 10a 20v
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PN channel MOSFET 10A
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS1OVS-14A HIGH-SPEED SWITCHING USE FS1 OVS-14A OUTLINE DRAWING I q J w e Q w r o- V d s s . 700V Id . 10A
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FS1OVS-14A
OVS-14A
O-22QS
57KH23
PN channel MOSFET 10A
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DIODE S3c
Abstract: ssm10n70
Text: SAMSUNG SEM ICO NDUCTOR INC *- SSM10N70 SSH10N70 >.U DE I T T t m M S □□OSB'it. □ W ~ N-CHANNEL * - • r * POWER MOSFETS V - ^ - IS t' Preliminary Specifications PRODUCT SUMMARY 700 Volt, i.a O h m SFET Part Number Vos Rosion Id SSM10N70 700V 1.00
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SSM10N70
SSH10N70
SSH10N70
DIODE S3c
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FS10KM-14A
Abstract: FS10KM14A 5A 700V MOSFET 700v 5A mosfet
Text: MITSUBISHI Neh POWER MOSFET F S 1 0 K M - 1 4 A HIGH-SPEED SWITCHING USE FS10KM-14A OUTLINE DRAW ING Dimensions in mm 10 ±0.3 2.8 ±0.2 V d s s . 700V rDS ON (MAX) .1.3Í1
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FS10KM-14A
O-22QFN
571Q-123
FS10KM-14A
FS10KM14A
5A 700V MOSFET
700v 5A mosfet
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