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    70 GHZ Search Results

    70 GHZ Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    LTC5597IDC#TRMPBF Analog Devices 70GHz, 35dB Linear-in-dB RMS P Visit Analog Devices Buy
    LTC5597HDC#TRMPBF Analog Devices 70GHz, 35dB Linear-in-dB RMS P Visit Analog Devices Buy
    LTC5597HDC#TRPBF Analog Devices 70GHz, 35dB Linear-in-dB RMS P Visit Analog Devices Buy
    LTC5597IDC#TRPBF Analog Devices 70GHz, 35dB Linear-in-dB RMS P Visit Analog Devices Buy
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    70 GHZ Price and Stock

    ADLINK Technology Inc Core i7-3770 3.4GHz LGA1155

    CPU - Central Processing Units CPU, Core i7-3770, 3.40GHz, 4-Core, 8MB SmartCache, Ivy Bridge, CM8063701211600 SR0PK, Step:E1, MM# 919976
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    Mouser Electronics Core i7-3770 3.4GHz LGA1155
    • 1 $431.16
    • 10 $418.18
    • 100 $418.18
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    • 10000 $418.18
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    ADLINK Technology Inc Core i7-4770S 31GHz FCLGA1150

    CPU - Central Processing Units
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    Mouser Electronics Core i7-4770S 31GHz FCLGA1150
    • 1 $479.51
    • 10 $465.08
    • 100 $465.08
    • 1000 $465.08
    • 10000 $465.08
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    ADLINK Technology Inc Core i7-7700T 2.9GHz LGA1151

    CPU - Central Processing Units CPU, Core i7-7700T, 2.90GHz, 4-Core, 8MB SmartCache, Kaby Lake, CM8067702868416 SR339, Step:B0, MM# 953005
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    Mouser Electronics Core i7-7700T 2.9GHz LGA1151
    • 1 $480.85
    • 10 $466.38
    • 100 $466.38
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    • 10000 $466.38
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    ADLINK Technology Inc CPU Core i7-8700T 2.4GHz

    CPU - Central Processing Units CPU, Core i7-8700T, 2.40GHz, 6-Core, 12MB SmartCache, Coffee Lake, CM8068403358413 SR3WX, Step:U0, MM# 963506
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CPU Core i7-8700T 2.4GHz
    • 1 $480.85
    • 10 $466.38
    • 100 $466.38
    • 1000 $466.38
    • 10000 $466.38
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    ADLINK Technology Inc Core i5-4570TE 2.7GHz LGA1150

    CPU - Central Processing Units CPU, Core i5-4570TE, 2.70GHz, 2-Core, 4MB SmartCache, Haswell, CM8064601484301 SR17Z, Step:C0, MM# 929226
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics Core i5-4570TE 2.7GHz LGA1150
    • 1 $328.4
    • 10 $314.51
    • 100 $307.58
    • 1000 $307.58
    • 10000 $307.58
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    70 GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Adapters

    Abstract: No abstract text available
    Text: Adapters In Series - Between Series In Series Adapters SPECIFICATIONS MODEL Connector Type Frequency Range VSWR Max 70-500-1 SMA - F/F 18.0 GHz 1.15:1 70-500-2 SMA - M/M 18.0 GHz 1.15:1 70-500-3 SMA - M/F 18.0 GHz 1.15:1 70-500-4 N - F/F 18.0 GHz 1.12:1


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    Untitled

    Abstract: No abstract text available
    Text: DBS-Band Synthesized Frequency Converter Single / Dual FCS200-DBS Operating Bands Up-Converters Features •       RF Output GHz IF Input (MHz) 17.3 – 18.1 70 17.3 – 18.1 70 RF Input (GHz) IF Output (MHz) 17.3 – 18.1 GHz 70 17.3 – 18.1 GHz


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    PDF FCS200-DBS ARUN-70DBS ARUD-70DBS PB-FCS200-DBS-13150

    Untitled

    Abstract: No abstract text available
    Text: HMC-T2270 Synthesized Signal Generator, 10 MHz to 70 GHz 2 Elizabeth Drive • Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.tm-hittite.com HMC-T2270 SYNTHESIZED SIGNAL GENERATOR, 10 MHz to 70 GHz v02.0712 Wide Frequency Range, 10 MHz to 70 GHz Signal Generator!


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    PDF HMC-T2270 HMC-T2270 HMC-PC01 HMC-PC02 HMC-PC03 HMC-PC04 HMC-PC05 HMC-PC06

    AN1032

    Abstract: NES2427P-70
    Text: PRELIMINARY DATA SHEET 70 W S-BAND TWIN NES2427P-70 POWER GaAs MESFET FEATURES • • • OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 70 W TYP HIGH POWER ADDED EFFICIENCY: 40 % TYP HIGH LINEAR GAIN: 10 dB TYP at 2.7 GHz PACKAGE OUTLINE T-86 45° R1.2 ± 0.3


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    PDF NES2427P-70 NES2427P-70 24-Hour AN1032

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 70 W S-BAND TWIN NES2427P-70 POWER GaAs MESFET FEATURES • • • OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 70 W TYP HIGH POWER ADDED EFFICIENCY: 40 % TYP HIGH LINEAR GAIN: 10 dB TYP at 2.7 GHz PACKAGE OUTLINE T-86 45° R1.2 ± 0.3


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    PDF NES2427P-70 NES2427P-70 24-Hour

    NEC 743 a

    Abstract: transistor NEC D 586 NES1823P-70
    Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1823P-70 70 W L, S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-70 is a 70 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS and IMT2000 base station systems. It is capable of delivering 70 W of output power CW with high


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    PDF NES1823P-70 NES1823P-70 IMT2000 NEC 743 a transistor NEC D 586

    Untitled

    Abstract: No abstract text available
    Text: WAVEGUIDE DIPLEXER Waveguide Diplexer Waveguide Insertion Loss dB Max. Flatness (dB) Max. Isolation (dB) Min. Return Loss (dB) Min. Output Type 7.1-8.5 WR112 1.2 0.4 70 18 FBP84/ SMA 10.7-11.745 WR75 1.2 0.4 70 18 FBP120/ SMA 12.751-13.248 WR75 1.2 0.4 70


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    PDF WR112 FBP84/ FBP120/ FBP140/ FBP220 FBP220/ DIPLEXW-28-3704439452 FBP320

    EPB025A-70

    Abstract: No abstract text available
    Text: EPB025A-70 Low Noise High Gain Heterojunction FET FEATURES • • S S 70 • D 40 • 20 NON-HERMETIC LOW COST CERAMIC 70 MIL PACKAGE TYPICAL 0.85dB NOISE FIGURE AND 10.5dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


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    PDF EPB025A-70 12GHz EPB025A-70

    BPDV3120R

    Abstract: No abstract text available
    Text: 70 GHz BALANCED PHOTODETECTOR BPDV3120R PRODUCT BRIEF KEY FEATURES OVERVIEW  70 GHz bandwidth guaranteed The balanced photodetector consists of two 75 GHz, waveguide-integrated photodiodes on one single chip. As a single-balanced photodetector the configuration ensures an excellent uniformity of the paired photodiodes


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    PDF BPDV3120R log10| S21-S31 BPDV3120R

    XPDV3120R

    Abstract: No abstract text available
    Text: 70 GHz PHOTODETECTOR XPDV3120R PRODUCT BRIEF KEY FEATURES OVERVIEW  70 GHz bandwidth The XPDV3120R comprises a single 75 GHz waveguide-integrated photodiode, which shows an extremely flat frequency response, both in power and in phase. The on-chip integrated bias-network with an optimized


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    PDF XPDV3120R XPDV3120R

    gold detectors circuit

    Abstract: RF Power detector RSSI
    Text: HMC-C054 v00.0608 RMS POWER DETECTOR 70 dB, 0.01 - 2 GHz Features ±1 dB Detection Accuracy to 2 GHz Input Dynamic Range: -70 dBm to +10 dBm RF Signal Wave Shape & Crest Factor Independent +12V Operation from -55°C to +85°C Excellent Temperature Stability


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    PDF HMC-C054 HMC-C054 gold detectors circuit RF Power detector RSSI

    Untitled

    Abstract: No abstract text available
    Text: HMC610LP4 / 610LP4E v02.0607 70 dB RMS POWER DETECTOR, DC - 3.9 GHz Typical Applications Features The HMC610LP4 E is ideal for: Accurate RMS-to-DC Conversion: DC to 3.9 GHz[1] • Cellular / PCS / 3G Input Dynamic Range of >70 dB: -60 to +10 dBm in 50 Ohms


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    PDF HMC610LP4 610LP4E

    AT-31625

    Abstract: AT-33225 AT-36408 AT-38086
    Text: Medium/High Power Transistors Typical Specifications @ 25°C Case Temperature Part Number Frequency (GHz) VCE (V) Pout (dBm) Power Gain (dB) Collector Efficiency (%) Package Page No. AT-31625 0.9 4.8 +28, CW 9 70 MSOP-3 4-43 AT-33225 0.9 4.8 +31, CW 9 70


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    PDF AT-31625 AT-33225 AT-36408 AT-38086 AT-31625 AT-33225 AT-36408 AT-38086

    magnetron kw

    Abstract: magnetrons MAGNETRON magnetron* -coaxial
    Text: Magnetrons VMU 1134 Magnetron Description: 70 kW, Ku-band coaxial magnetron Features: • · · · · · · · · 150 Sohier Road Beverly, Massachusetts Beverly Microwave Division Frequency 14.0 – 15.2 GHz Peak Power Output 70 kW Duty Cycle .0012 Anode Voltage 18 kV


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    Untitled

    Abstract: No abstract text available
    Text: HMC-T2270 Synthesized Signal Generator, 10 MHz to 70 GHz 2 Elizabeth Drive • Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.tm-hittite.com Instrumentation Product Support at TE@hittite.com HMC-T2270 SYNTHESIZED SIGNAL GENERATOR, 10 MHz to 70 GHz


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    PDF HMC-T2270 HMC-T2270 HMC-PC01 HMC-PC02 HMC-PC03 HMC-PC04 HMC-PC05 HMC-PC06

    Untitled

    Abstract: No abstract text available
    Text: HMC602LP4 / 602LP4E v03.0209 70 dB, LOGARITHMIC DETECTOR / CONTROLLER, 1 - 8000 MHz Typical Applications Features The HMC602LP4 E is ideal for IF and RF applications in: Wide Dynamic Range: up to 70 dB High Accuracy: ±1 dB with 60 dB Range Up To 6 GHz Fast: 10ns Output Response Time


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    PDF HMC602LP4 602LP4E HMC602LP4E

    magnetron kw

    Abstract: magnetron 1135 Magnetron 1.5 kW
    Text: Q 0UR JDWQH V VMX 1135 Magnetron Description: 70 kW, X-band coaxial magnetron Features: • · · · · · · · · 150 Sohier Road Beverly, Massachusetts Beverly Microwave Division Frequency 8.5 – 9.6 GHz Peak Power Output 70 kW Duty Cycle .0012 Anode Voltage 18 kV


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    Untitled

    Abstract: No abstract text available
    Text: Programmable Attenuators Models 3404, 3406, 3408 & 3409 Programmable Attenuators dc to 6.0 GHz 1 Watt with optional TTL Interface CELL CONFIGURATIONS: Model Number Cell Increments dB 3404-15 4 15/1 1, 2, 4, 8 3404-55 4 55/5 5, 10, 20, 20 3404-70 4 70/10


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    HMC602LP4

    Abstract: HMC602LP4E
    Text: HMC602LP4 / 602LP4E v03.0209 70 dB, LOGARITHMIC DETECTOR / CONTROLLER, 1 - 8000 MHz Typical Applications Features The HMC602LP4 E is ideal for IF and RF applications in: Wide Dynamic Range: up to 70 dB High Accuracy: ±1 dB with 60 dB Range Up To 6 GHz Fast: 10ns Output Response Time


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    PDF HMC602LP4 602LP4E HMC602LP4E

    HMC602LP4

    Abstract: No abstract text available
    Text: HMC602LP4 / 602LP4E v02.0109 70 dB, LOGARITHMIC DETECTOR / CONTROLLER, 1 - 8000 MHz Typical Applications Features The HMC602LP4 E is ideal for IF and RF applications in: Wide Dynamic Range: up to 70 dB High Accuracy: ±1 dB with 60 dB Range Up To 6 GHz Fast: 8ns Output Response Time


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    PDF HMC602LP4 602LP4E

    AN1032

    Abstract: NES1823P-70
    Text: PRELIMINARY DATA SHEET 70W L-S BAND TWIN POWER GaAs MESFET FEATURES NES1823P-70 OUTLINE DIMENSIONS Units in mm • • HIGH OUTPUT POWER: 70 W TYP HIGH POWER ADDED EFFICIENCY: 40 % TYP • HIGH LINEAR GAIN: 11 dB TYP at 2.2 GHz PACKAGE OUTLINE T-86 45°


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    PDF NES1823P-70 NES1823P-70 IMT2000 24-Hour AN1032

    Untitled

    Abstract: No abstract text available
    Text: E GAV30 GAV50 GAV60 GAV100 Electrical Characteristics @ 25 °C GAV30 GAV50 GAV60 GAV100 Units Quantum Efficiency 60 70 60 (70) 60 (70) 60 (70) % min. (typ.) Responsivity @1300nm .76 (.84) .76 (.84) .76 (.84) .76 (.84) AAV min. (typ.) M=1 Breakdown Voltage *


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    PDF GAV30 GAV50 GAV60 GAV100 GAV30 GAV60 1300nm IL-45208

    163DCT

    Abstract: EWP63 F137PC0240CB EW63 waveguide EWP63S 163SEM EWP63-59W 163DE EWSH EWFTK-63
    Text: Ordering Information tor Waveguide Assemblies Frequency* GHz Waveguide Type Connectort Tunable Flange Typett Pressure Window - 55000A-137 55001-137 223306-70 F137PA0240BB F137PC0240CB F137MH0600HB 55000A-137 55001-137 223306-70 F137PA0240BA* F137PC0240CA*


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    PDF UG-344/Uttt CPR137G PDR70 163DCT 163DET EWP63S 5000A-137 163SEM F137PA0240BB F137PC0240CB EWP63 EW63 waveguide 163SEM EWP63-59W 163DE EWSH EWFTK-63

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS AKTIENGESELLSCHAF LOE ]> • 023SbOS G D S m ? S M7D I1SIE6 SIEMENS Transistoren Transistors AIGaAs/GaAs HEMTs AIGaAs/GaAs HEMTs Characteristics TA = 25° C Maximum Ratings E mW 9m mS 70 180 40 ¿> P o Type 70 180 40 -3.0.0 60 180 50 70 200 40


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    PDF 023SbOS CGY50 OT-143 CGY40 CLY10 CGY52