MICRONAS uac
Abstract: UAC 3556B sub-woofer with 5.1 amp circuit diagram subwoofer preamp diagram subwoofer PREAMP circuit diagram 5.1 subwoofer ic type amplifier circuit diagram 40 led VU-METER UAC 3554B UAC 3556B equivalent 5v subwoofer amplifier
Text: ADVANCE INFORMATION MICRONAS Edition Aug. 2, 2001 6251-544-1AI UAC 3554B, UAC 3556B Universal Serial Bus USB Codecs MICRONAS UAC 3554B, UAC 3556B ADVANCE INFORMATION Contents Page Section Title 4 4 1. 1.1. Introduction Features 6 7 7 7 7 7 7 7 7 7 7 7 8
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3554B,
3556B
6251-544-1AI
3556B
MICRONAS uac
UAC 3556B
sub-woofer with 5.1 amp circuit diagram
subwoofer preamp diagram
subwoofer PREAMP circuit diagram
5.1 subwoofer ic type amplifier circuit diagram
40 led VU-METER
UAC 3554B
UAC 3556B equivalent
5v subwoofer amplifier
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PDF
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pa 66 gf
Abstract: MGFC40V7177 MGFC40V7177B
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC40V7177B s<^pa,a' 7 .1 — 7 .7 G H z BAND 1 0 W INTERNA LLY M ATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 7 1 7 7 B is an in te rna lly im p e d a n ce -m a tch e d GaAs power F E T especially designed fo r use in 7 .1 — 7 .7
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MGFC40V7177B
MGFC40V7177
pa 66 gf
MGFC40V7177B
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aeg t 133
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39V7177A | 7 .1 — 7 .7 6 H z BAND 8 W INTERNALLY MATCHED GaAs FET j DESCRIPTION T h e M G F C 3 9 V 7 1 7 7 A is an in te rn a lly im p e d a n c e -m a tc h e d GaAs p o w e r F E T especially designed fo r use in 7 . 1 — 7 .7
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GFC39V7177A
aeg t 133
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MINA?* p R Ö MGFC39V7177A - ' y. «'-' f ;«ep^^ e ° ‘ 7 .1 -7 .7 G H * BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION Th e M G F C 3 9 V 7 1 7 7 A is an internally im ped an ce-m atched GaAs power F E T especially designed for use in 7 . 1 —7 .7
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MGFC39V7177A
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V 7785 7 .7 —8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G F C 4 0 V 7 7 8 5 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7 . 7 - 8 . 5
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27C102P,
RV-15
T-46-13-25
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V7177B so" pa „m C U '1-' . 7 .1 — 7 .7 G H z BAND ÎO W INTERNA LLY M ATCHED GaAs FET DESCRIPTION T h e M G F C 4 0 V 7 1 7 7 B is a n in te rn a lly im p e d a n c e -m a t c h e d G aA s p o w e r F E T especially designed fo r use in 7 . 1 — 7 . 7
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MGFC40V7177B
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MGFC40V7177
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC40V7177 7 .1 ~ 7 .7 G H z BAND 1 0 W INTERNALLY MATCHED GaAs FET D E S C R IP T IO N T h e M G F C 4 0 V 7 1 7 7 is an in te rn a lly O U T L IN E D R A W IN G im p ed an ce-m atch e d G aA s p o w e r F E T especially designed fo r use in 7 . 1 — 7 . 7
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MGFC40V7177
MGFC40V7177
ltem-01:
10MHz
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> Ì MGFX36V0717| i 3 ; \ |_ 1 0 . 7 ~ l l . 7 G H z BAND 4 W INTERNALLY MATCHED GaAs FET j DESCRIPTION The M G F X 3 6 V 0 7 1 7 is an internally impedance matched GaAs power FET especially designed for use in 1 0 .7 — 1 1 .7
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MGFX36V0717|
55add
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> „OJ»«*"*'' So«'* MGFC39V7177A p^ 1 7 .1 — 7 .7 G H z BAND 8 W IN TER N A LLY M ATCHED GaAs FET DESCRIPTION T h e M G F C 3 9 V 7 1 7 7 A is a n internally im p e d a n c e -m a tc h e d GaAs power F E T especially designed fo r use in 7 .1 —7 . 7
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MGFC39V7177A
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V7785B Vi are l'niS 7 .7 — 8.5G H z BAND 1 0 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 7 7 8 5 B is an in te rna lly im p eda nce -m atche d GaAs power F ET especially designed fo r use in 7 .7 - 8 . 5
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MGFC40V7785B
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V778S 7 .7 — 8 .5G H z BAND 16W INTERNALLY M ATCHED GaAs FET DESCRIPTION The M G F C 4 2 V 7 7 8 5 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7 . 7 — 8 .5 GHz band amplifiers. The herm etically sealed metal-ceramic
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MGFC42V778S
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7785A
Abstract: C39V7785A
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 39V 7785A 7 .7 8.SG Hz BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 9 V 7 7 8 5 A is an internally im pedance-m atched GaAs power FET especially designed fo r use in 7 . 7 - 8 . 5 GHz band amplifiers. The herm etically sealed metal-ceramic
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MGFC40V7785
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V7785 7 .7 — 8.5GH z BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 7 7 8 5 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7 . 7 —8 . 5 G H z band am plifiers. The herm etically sealed metal-ceramic
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MGFC40V7785
MGFC40V7785
ltem-01:
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39V77
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 39V77 8SA 7 .7 ~ 8 .5 G H z BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 9 V 7 7 8 5 A isan internally im pedance-m atched GaAs power FET especially designed fo r use in 7 , 7 - 8 . 5 GHz band amplifiers. The herm etically sealed metal-ceramic
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39V77
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1075G
Abstract: MGFX36V0717
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FX 36 V 0 71 7 1 0 .7 — 11.7G H z BAND 4 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F X 3 6 V 0 7 1 7 is an internally impedance matched GaAs power FET especially designed for use in 1 0 .7 — 1 1 .7 G Hz band amplifiers. The hermetically sealed metal-ceramic
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MGFX36V0717
MGFX36V0717
75GHz
1075G
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HA17733
Abstract: HA17733P 733-P 733g 733P hitachi ha-1 Video Amplifier 733 HA17733G DP-14 34Kf
Text: H A 1 7 7 3 3 G .H A 1 7 7 3 3 P .H A 1 7 7 3 3 * ~ VM,° HA1 7733 is a video amplifier for wide band w ith small phase delay and excellent gain stability. This amplifier eliminates external phase compensation and can fix the gain 10, 100 or 4 0 0 without using external elements. If some external
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HA17733G
HA17733P
HA17733
7733G,
HA17733P
120MHz
HA17733
733-P
733g
733P
hitachi ha-1
Video Amplifier 733
DP-14
34Kf
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V7177 7 .1 —7.7G Hz BAND 1 0W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F C 4 0 V 7 1 7 7 is an in te rn a lly im pedance-m atched G aA s po w er F E T especially designed fo r use in 7 .1 - 7 . 7 G H z band a m p lifie rs . T h e h e rm e tic a lly sealed m etal-ceram ic
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MGFC40V7177
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Untitled
Abstract: No abstract text available
Text: Lead Type Monolithic Crystal Filters H C -4 9 /T 2 P 0 L E Fundamental; 10M Hz~15M Hz •Generic Specification Item Name ajv. 1 0 7 0 7 AH 1 0 7 1 2 AH 1 0 7 1 5 AH 10 7 3 0 A H Nominal Frequency Pass Bandwidth Ripple Insertion Loss Terminal Impedance [MHz]
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5000//-l
HC-49/T
45030AC
58515AC
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LC6502
Abstract: LC6502C LC7060 sanyo lc7060 LC7523 sanyo lc7560 one chip graphic equalizer graphic equalizer 12db LC7560 DIP28
Text: b3E 7 cH 7 0 7 b D LC7523, 7523M 0 0 1 1 7 1 M 707 • SANYO TSA J SEMI CONDUCTOR CORP C M O S LSI 3073A Electronic Volume Control for Graphic Equalizer F u n c tio n s •On-chip electronic volume control for graphic equalizer with 7 bands each of right/left.
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7T17D7b
001171M
LC7523,
7523M
LC7523
LC7523M)
LC7060
LC6502C)
LC7560-Â
LC7565-Â
LC6502
LC6502C
sanyo lc7060
LC7523
sanyo lc7560
one chip graphic equalizer
graphic equalizer 12db
LC7560
DIP28
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PDF
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pa 66 gf
Abstract: MGFC40V7785B
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> & M G FC 40V 7785B 7 .7 —8 .5 G H z BAND 1 0 W INTERNALLY M ATCHED GaAs FE T DESCRIPTION The M G F C 4 0 V 7 7 8 5 B is an internally im p e d a n c e -m a tc h e d GaAs power F E T especially designed fo r use in 7 . 7 — 8 . 5
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MGFC40V7785B
pa 66 gf
MGFC40V7785B
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V 7785B •b e U 7 .7 —8.5G H z BAND 1 0 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 7 7 8 5 B is an internally im p e d a n c e-m a tc h e d GaAs pow er F E T especially designed fo r use in 7 . 7 — 8 . 5
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7785B
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFX39V0717 1 0 .7 — 1 1 .7 G H z BA N D 8 W INTERNALLY M ATCHD GaA$ FET DESCRIPTION The M G F X 3 9 V 0 7 1 7 is an internally impedance matched G a A s pow er F E T especially designed for use in 1 0 .7 - 1 1 .7 G H z band amplifiers. The hermetically sealed metal-ceramic
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MGFX39V0717
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI S EM IC O N D U CTO R <G aA s FET> MGFC36V7177 iro d u c t » o n p\an fo r P dicontinue 7 . 1 - 7 . 7 GHz BAND 4 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 6 V 7 1 7 7 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7.1 ~ 7.7
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MGFC36V7177
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MGFC40V7177A
Abstract: pir 5 S28C
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V7177A PREUM'Ni ì ? y I * . 1 “ “ Nol««' ' 1,e»'>c'"fl,ts to cV»ân9 3 -" s°mep 7 .1 — 7 .7 G H z BAND ÎO W INTERNA LLY M ATCHED GaAs FET DESCRIPTION T h e M G F C 4 0 V 7 1 7 7 A isan internally im p e d a n c e -m a tc h e d
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MGFC40V
MGFC40V7177Aisan
MGFC40V7177A
pir 5
S28C
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