Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    6Y SOT23 Search Results

    6Y SOT23 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation

    6Y SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MMBFJ176 on semiconductor

    Abstract: J175 MMBFJ176 6x marking sot-23 p-channel
    Text: J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch Description This device is designed for low-level analog switching sample-and-hold circuits and chopper-stabilized amplifiers. Sourced from process 88. G S SOT-23 D Mark: 6W / 6X / 6Y TO-92 DG S


    Original     		PDF MMBFJ175 MMBFJ176 MMBFJ177 OT-23 MMBFJ175 OT-23 MMBFJ176 MMBFJ176 on semiconductor J175 6x marking sot-23 p-channel

    na174

    Abstract: MMBFJ177
    Text: J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177 MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G S S G TO-92 D SOT-23 D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold


    Original     		PDF MMBFJ175 MMBFJ176 MMBFJ177 OT-23 na174 MMBFJ177

    EQUIVALENT FOR J175

    Abstract: EQUIVALENT FOR J174 j174 EQUIVALENT J174 J177 equivalent J175 EQUIVALENT FOR J176 J176 J177 MMBFJ177
    Text: MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G D G S TO-92 SOT-23 D S Mark: 6W / 6X / 6Y P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabalized amplifiers. Sourced from Process 88. Absolute Maximum Ratings*


    Original     		PDF MMBFJ175 MMBFJ176 MMBFJ177 OT-23 MMBFJ175 MMBFJ176 EQUIVALENT FOR J175 EQUIVALENT FOR J174 j174 EQUIVALENT J174 J177 equivalent J175 EQUIVALENT FOR J176 J176 J177 MMBFJ177

    Untitled

    Abstract: No abstract text available
    Text: J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177 MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G S S G TO-92 D SOT-23 D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold


    Original     		PDF MMBFJ175 MMBFJ175 MMBFJ176 MMBFJ177 OT-23

    J177

    Abstract: J176 J175 J174 MMBFJ176 MMBFJ177 J174-177 semiconductor j175 EQUIVALENT FOR J174 MMBFJ175
    Text: G D S G TO-92 SOT-23 D S Mark: 6W / 6X / 6Y P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF OT-23 J177 J176 J175 J174 MMBFJ176 MMBFJ177 J174-177 semiconductor j175 EQUIVALENT FOR J174 MMBFJ175

    j174 transistor

    Abstract: J175 J174 J176 J177 MMBFJ175 MMBFJ176 MMBFJ177 J175 transistor transistor j175
    Text: J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177 MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G S S G TO-92 D SOT-23 D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold


    Original     		PDF MMBFJ175 MMBFJ175 MMBFJ176 MMBFJ177 OT-23 j174 transistor J175 J174 J176 J177 MMBFJ176 MMBFJ177 J175 transistor transistor j175

    j177 TRANSISTOR

    Abstract: J176 J176. P-CHANNEL. TO-92 J174 J175 J177 MMBFJ175 MMBFJ176 MMBFJ177 J177 TO-92
    Text: J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177 MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G S S G TO-92 D SOT-23 D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold


    Original     		PDF MMBFJ175 MMBFJ175 MMBFJ176 MMBFJ177 OT-23 j177 TRANSISTOR J176 J176. P-CHANNEL. TO-92 J174 J175 J177 MMBFJ176 MMBFJ177 J177 TO-92

    JST SOT-23

    Abstract: smd transistor l6 smd transistor 2y R135 VARISTOR 103 resistor pack diode zener c55 2Y DIODE SMD DIODE SMD J9 transistor c114 diode zener c72
    Text: BOM STEVAL-ISS001V1 PART TYPE 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM PACK. 0805 3 RESISTOR SMD 2K2 1% 0.125W 100PPM PACK. 0805 4 RESISTOR SMD 3K3 1% 0.125W 100PPM PACK. 0805 5 RESISTOR SMD 4K7 1% 0.125W 100PPM PACK. 0805 6 RESISTOR SMD 10K 1% 0.125W 100PPM PACK. 0805


    Original     		PDF STEVAL-ISS001V1 BAS16 100PPM JST SOT-23 smd transistor l6 smd transistor 2y R135 VARISTOR 103 resistor pack diode zener c55 2Y DIODE SMD DIODE SMD J9 transistor c114 diode zener c72

    Untitled

    Abstract: No abstract text available
    Text: CMPFJ174 CMPFJ175 CMPFJ176 CMPFJ177 w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPFJ174 Series devices are epoxy molded P-Channel JFETs manufactured in an SOT-23 case, designed for low level amplifier applications. SURFACE MOUNT SILICON


    Original     		PDF CMPFJ174 CMPFJ175 CMPFJ176 CMPFJ177 OT-23 CMPFJ174: CMPFJ175: CMPFJ176: CMPFJ177:

    Untitled

    Abstract: No abstract text available
    Text: J174 / J175 / J176 / J177 MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch Description This device is designed for low-level analog switching sample-and-hold circuits and chopper-stabilized amplifiers. Sourced from process 88. J174 / 175 / 176 / 177 1 MMBFJ175 / 176 / 177


    Original     		PDF MMBFJ175 MMBFJ176 MMBFJ177 OT-23 O-92-3L MMBFJ175 OT-23 MMBFJ176

    FHT9013

    Abstract: 6Y MARKING SOT23 FHT9012
    Text: ᄰ፿ྯ૵਌ General Purpose Transistors FHT9013 General Purpose Transistors ᄰ፿ྯ૵਌ DESCRIPTION & FEATURES 概述及特點 Excellent hFE Linearity hFE 線性特性極好 hFE（2）=25（Min.）at VCE=-6V, IC=-400mA. Complementary to FHT9012 與 FHT9012 互補


    Original     		PDF 25Min -400mA. FHT9012 FHT9013 OT-23 OT-23 FHT9013O FHT9013Y FHT9013G FHT9013 6Y MARKING SOT23 FHT9012

    FHT9013Y

    Abstract: FHT9012 FHT9013 FHT9013G FHT9013O
    Text: 广东肇庆风华新谷微电子有限公司 广东省肇庆市风华路 18 号风华电子工业城三号楼一楼 TEL:0758-2865088 2865091 FAX:0758-2849749 General Purpose Transistors 三极管 NPN Silicon FHT9013 FEATURES 特点 • Excellent hFE Linearity hFE 线性特性极好


    Original     		PDF FHT9013) 400mA. FHT9012 FHT9013O FHT9013Y FHT9013G 100mA 400mA 500mA FHT9012 FHT9013

    UL94V-0 inverter

    Abstract: DTA123YN3 DTC123YN3
    Text: CYStech Electronics Corp. Spec. No. : C262N3 Issued Date : 2004.02.27 Revised Date : Page No. : 1/4 PNP Digital Transistors Built-in Resistors DTA123YN3 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input


    Original     		PDF C262N3 DTA123YN3 DTC123YN3 OT-23 UL94V-0 UL94V-0 inverter DTA123YN3 DTC123YN3

    2N3904 SOT-23 MARKING CODE

    Abstract: TO226AA Philips TO-92 MARKING CODE BC327 NATIONAL SEMICONDUCTOR AGt marking code nte 2n3904 DALLAS SEMICONDUCTOR 2501 to-226aa BC547C SOT23 NATIONAL SEMICONDUCTOR MARKING CODE sot
    Text: Transistors Manufacturer’s Code Log AGT ANA ADV AVX BNS CRY DLS Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Bourns Crydom Company Dallas Semiconductor EPC FSC FJS GIS HVP IRF INT EPCOS Fairchild Semiconductor Fuji Semiconductor General Semiconductor


    Original     		PDF 751B-SO-16) 2N5485 2N5486 O-226AA) 2N3904 SOT-23 MARKING CODE TO226AA Philips TO-92 MARKING CODE BC327 NATIONAL SEMICONDUCTOR AGt marking code nte 2n3904 DALLAS SEMICONDUCTOR 2501 to-226aa BC547C SOT23 NATIONAL SEMICONDUCTOR MARKING CODE sot

    N-Channel JFET FETs

    Abstract: ft960 Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17
    Text: ON Semiconductor Field Effect Transistors and Power TMOS MOSFETs ¨ Field Effect Transistors Field Effect Transistors JFETs TMOS MOSFETs JFETs operate in the depletion mode. They are available in both P- and N-channel and are offered in both Through-hole and Surface Mount Packages. Applications include generalpurpose amplified, switches and choppers, and RF amplifiers and mixers. These devices are


    Original     		PDF O-226AA O-220AB MTP6P20E MTP12P10 OT-223) MTP50P03HDL MMFT960T1 FT960 N-Channel JFET FETs Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17

    PC MOTHERBOARD CIRCUIT diagram SCHEMATICS

    Abstract: SN105125
    Text: User's Guide SLAU234A – October 2007 – Revised July 2010 DDC11xEVM-PDK User's Guide Figure 1. DDC11xEVM-PDK Photo The DDC11xEVM-PDK is an evaluation kit for evaluating the DDC112 dual channel and DDC114 (quad channel) current input 20-bit analog-to-digital (A/D) converters. The kit consists of a motherboard


    Original     		PDF SLAU234A DDC11xEVM-PDK DDC112 DDC114 20-bit DDC112 DDC112EVM) DDC114 PC MOTHERBOARD CIRCUIT diagram SCHEMATICS SN105125

    8F SOT-23 PNP on

    Abstract: 1n4148 5D mark FDH777 mark fq sot 8F SOT23 PNP SOT-23 Mark ZF 1N4148 surface mount NDSJ105 5d surface mount diode BV 9y transistor
    Text: Discrete POWER & Signal Technologies Surface Mount Diodes Computer Diodes by Descending BV LEADLESS GLASS PACKAGE Device No. Package No. BV (V) Min IR (nA) Max @ VR VF (V) (V) Min C trr (mA) (pF) Max (ns) Max 1 10 4 0.72 5 @ Max IF Test Conditions Process


    Original     		PDF FDLL914 LL-34 FDLL914A FDLL914B FDLL916 FDLL916A 8F SOT-23 PNP on 1n4148 5D mark FDH777 mark fq sot 8F SOT23 PNP SOT-23 Mark ZF 1N4148 surface mount NDSJ105 5d surface mount diode BV 9y transistor

    6x marking sot-23 p-channel

    Abstract: 6W MARKING CODE SOT23 transistor 6y "P-Channel JFET" P Channel JFET CMPFJ174 P-Channel JFET Amplifier marking code ny CMPFJ175 CMPFJ176
    Text: Data Sheet CMPFJ174 CMPFJ175 CMPFJ176 CMPFJ177 Central Sem icon du ctor Corp. SURFACE MOUNT SILICON P-CHANNEL JFET 145 Adams Ave., Hauppauge, NY 11788 USA Phone 516 435-1110 FAX (516) 435-1824 SOT-23 CASE Manufacturers of World Class Discrete Semiconductors


    OCR Scan     		PDF CMPFJ174 CMPFJ175 CMPFJ176 CMPFJ177 OT-23 6x marking sot-23 p-channel 6W MARKING CODE SOT23 transistor 6y "P-Channel JFET" P Channel JFET P-Channel JFET Amplifier marking code ny

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P-Channel — Depletion 2SOURCE M MBFJ177LT1 MAXIMUM RATINGS Rating Symbol Value Unit Vd G 25 Vdc v GS r -2 5 Vdc Symbol Max Unit Total Device Dissipation FR-5 BoardO) Ta = 25-C Derate above 25°C PD 225


    OCR Scan     		PDF MBFJ177LT1 OT-23 O-236AB) MMBFJ177LT1 15Vdc, 15Vdc)

    BFJ17

    Abstract: BFJ177
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFE T Chopper P-Channel — Depletion 2 SOURCE M M B FJ1 7 7LT 1 1 DRAIN M AXIM UM RATINGS Rating D raln-G ate Voltage Reverse G ate-S o u rce Voltage Symbol Value VDG 25 Unit Vdc v GS r -2 5 V dc Symbol Max Unit PD 225


    OCR Scan     		PDF OT-23 O-236AB) BFJ177LT1 BFJ17 BFJ177

    N-Channel JFET FETs

    Abstract: P-Channel RF Amplifier jfets MMBF5457LT1 MMBF5484LT1
    Text: SOT-23 TRANSISTORS continued Unipolar (Field Effect) Transistors (JFETs) RF JFETs The following is a list of surface mount FETs which are intended for VHF/UHF RF amplifier applications. Pinout: 1-Drain, 2-Source, 3-Gate NF Device Y»s @ V ds Marking dB Typ


    OCR Scan     		PDF OT-23 MMBFJ309LT1 MMBFJ310LT1 MMBFU310LT1 MMBF4416LT1 MMBF5484LT1 MMBFS486LT1 MMBF48S6LT1 MMBF4391LT1 MMBF4860LT1 N-Channel JFET FETs P-Channel RF Amplifier jfets MMBF5457LT1

    sot-23 Marking M6

    Abstract: FET marking codes MOSFET P-channel SOT-23 m6 sot-23 pinout bf992 application FET SOT-223 N-Channel fet m90 BFT46 SFs SOT23 6x marking sot-23 p-channel
    Text: SMDFETs DESCRIPTION • Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capacitance, negligible inductance, and reduced board assem bly cost. The three categories of FET’s each have its own attributes


    OCR Scan     		PDF BSP121 BSP126 BSP205 BSP206 BSP220 BSP225 BSR56 BSR57 BSR58 BSS83 sot-23 Marking M6 FET marking codes MOSFET P-channel SOT-23 m6 sot-23 pinout bf992 application FET SOT-223 N-Channel fet m90 BFT46 SFs SOT23 6x marking sot-23 p-channel

    SMD CODE MARKING s7 SOT23

    Abstract: PMBFJ111 PMBFJ174 BSR56 BFT46
    Text: SMD FET’s DESCRIPTION • Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capacitance, negligible inductance, and reduced board assembly cost. The three categories of FET’s each have its own attributes


    OCR Scan     		PDF applicat174 PMBFJ175 PMBFJ176 PMBFJ177 OT-23 OT-89 OT-143 OT-223 OT-23 SMD CODE MARKING s7 SOT23 PMBFJ111 PMBFJ174 BSR56 BFT46

    BF546

    Abstract: marking 6k sot-23 package BF5459L F5 sot223 BFJ177 F5 marking sot223 MLL34 M6A sot-23 6z sot223 marking Cross Reference sot
    Text: MOTOROLA SC 4bE T> • XSTRS/R F b 3 b 7 2 S 4 D O' îb S Ot 2 « f l O T t — 3 SO T-23 T R A N S IS T O R S (continued) Unipolar (Field Effect) Transistors (JFETs) RF JFETs Pinout: 1-Drain, 2-Source, 3-Gate NF Device Marking Typ (dB) f (MHz) Min (mmhos)


    OCR Scan     		PDF BFJ309L BFJ310L BF5486L BF5457L BF5459L OT-23 OT-143 MLL-34 OT-223 SO-16 BF546 marking 6k sot-23 package F5 sot223 BFJ177 F5 marking sot223 MLL34 M6A sot-23 6z sot223 marking Cross Reference sot