ON5040
Abstract: 150RA-120
Text: IGBT IPM 1200V 6x150A 6MBP 150RA-120 Intelligent Power Module R-Series n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items DC Bus Voltage DC Bus Voltage (surge) DC Bus Voltage (short operating) Collector-Emitter Voltage Inverter Continuous
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6x150A
150RA-120
ON5040
150RA-120
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15S-120L
Abstract: 15S120L 6mbi
Text: 6MBI 15S-120L 6-Pack IGBT 1200V 6x15A n Outline Drawing IGBT MODULE S-Series n Features • NPT-Technology • Solderable Package • Square SC SOA at 10 x IC • High Short Circuit Withstand-Capability • Small Temperature Dependence of the Turn-Off
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15S-120L
6x15A
15S-120L
15S120L
6mbi
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Untitled
Abstract: No abstract text available
Text: 2403 260 00087 RECEIVER-615-2-SC-FRANKLIN The 6x15x2.0 mm rectangular Franklin receiver is a high end miniature receiver specifically designed for mobile phones and smartphones where high quality voice transmission is required. Features: • High Sensitivity 71 dB/W/m
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RECEIVER-615-2-SC-FRANKLIN
6x15x2
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6x15A
Abstract: 15S120L
Text: 6-Pack IGBT 1200V 6x15A 6MBI 15S-120L n Outline Drawing IGBT MODULE S-Series n Features • NPT-Technologie • Solderable Package • Square SC SOA at 10 x IC • High Short Circuit Withstand-Capability • Small Temperature Dependence of the Turn-Off
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6x15A
15S-120L
6x15A
15S120L
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7mbr
Abstract: 6x15A
Text: 7MBR 15SA-120 IGBT PIM 1200V 6x15A+Chopper Power Integrated Module PIM n Features n Outline Drawing • NPT-Technology • Solderable Package • Square SC SOA at 10 x IC • High Short Circuit Withstand-Capability • Small Temperature Dependence of the Turn-Off
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15SA-120
6x15A
7mbr
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15S-120
Abstract: IGBT 1200V 6mbi 6x15A
Text: 6-Pack IGBT 1200V 6x15A 6MBI 15S-120 n Outline Drawing IGBT MODULE S-Series n Features • NPT-Technology • Solderable Package • Square SC SOA at 10 x IC • High Short Circuit Withstand-Capability • Small Temperature Dependence of the Turn-Off Switching Loss
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6x15A
15S-120
15S-120
IGBT 1200V
6mbi
6x15A
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Untitled
Abstract: No abstract text available
Text: 7MBP 150RA-120 IGBT IPM 1200V 6x150A+Chopper Intelligent Power Module R-Series n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items DC Bus Voltage DC Bus Voltage (surge) DC Bus Voltage (short operating) Collector-Emitter Voltage Inverter
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150RA-120
6x150A
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20936
Abstract: No abstract text available
Text: RS ITEM NO 209-361 SIGNO ITEM NO SLED24WB5ADG LED/Multiled LED Optimum voltage V 24Vdc Mounting Size 6X15mm Rectifier - Mounting Finish Wedge Base AC current - Protection - DC current 12mA Mount Holder - Voltage Tolerance(%) 10% Chip Qty 1 Optimum temperature (°C)
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SLED24WB5ADG
24Vdc
6X15mm
1400mcd
20936
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Untitled
Abstract: No abstract text available
Text: RS ITEM NO 212-294 SIGNO ITEM NO MLED24WB5DG LED/Multiled Multiled Optimum voltage V 24Vdc Mounting Size 6x15mm Rectifier - Mounting Finish Wedge Base AC current - Protection - DC current 12mA Mount Holder - Voltage Tolerance(%) 10% Chip Qty 6 Optimum temperature (°C)
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MLED24WB5DG
24Vdc
6x15mm
55mcd
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LQFP Package tray
Abstract: TQFP14X14X1 LQFP "100 pin" PACKAGE LQFP Package 128-pin 128-PIN tray container dimensions TRAY CONTAINER LQFP14 100-PIN PLASTIC LQFP NEC tqfp14x14x1.4
Text: TRAY CONTAINER 7 15.45 16.7 6x15=90 21.00 A' A 150°C MAX. PPE 105.0 TQFP14X14X1.4 15.40 16.7 20.30 284.2 315.0 322.6 Section A – A' 16.7 5.62 (6.35) 13.85 7.62 135.9 UNIT : mm Applied Package Quantity (pcs) 80-pin Plastic LQFP (1.4mm thick) 100-pin Plastic LQFP (1.4mm thick)
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TQFP14X14X1
LQFP14
80-pin
100-pin
128-pin
SSD-A-H6285-2
-A-H6285-2
LQFP Package tray
LQFP "100 pin" PACKAGE
LQFP Package 128-pin
tray container dimensions
TRAY CONTAINER
100-PIN PLASTIC LQFP NEC
tqfp14x14x1.4
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ac chopper
Abstract: 6x15A OF IGBT 600V 15A
Text: 7MBR 15SA-120 IGBT PIM 1200V 6x15A+Chopper Power Integrated Module PIM • Features • NPT-Technology • Solderable Package • Square SC SOA at 10 x IC • High Short Circuit Withstand-Capability • Small Temperature Dependence of the Turn-Off Switching Loss
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15SA-120
6x15A
ac chopper
OF IGBT 600V 15A
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1200V
Abstract: UV diode 200 nm emitter 150RA-120
Text: 7MBP 150RA-120 IGBT IPM 1200V 6x150A+Chopper Intelligent Power Module R-Series n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items DC Bus Voltage DC Bus Voltage (surge) DC Bus Voltage (short operating) Collector-Emitter Voltage Inverter
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150RA-120
6x150A
1200V
UV diode 200 nm emitter
150RA-120
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Collmer SC
Abstract: No abstract text available
Text: 6-Pack IGBT 1200V 6x15A 6MBI 15S-120L n Outline Drawing IGBT MODULE S-Series n Features • NPT-Technologie • Solderable Package • Square SC SOA at 10 x IC • High Short Circuit Withstand-Capability • Small Temperature Dependence of the Turn-Off
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6x15A
15S-120L
Collmer SC
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K4S643233H
Abstract: K4S643233H-F
Text: K4S643233H - F H E/N/G/C/L/F Mobile-SDRAM 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,
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K4S643233H
32Bit
90FBGA
K4S643233H-F
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C17V
Abstract: 150ra zener 600v diode DB 3 C
Text: IGBT IPM 600V 6x150A+DB 7MBP 150RA-060 Intelligent Power Module R-Series n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items DC Bus Voltage DC Bus Voltage (surge) DC Bus Voltage (short operating) Collector-Emitter Voltage Inverter
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150RA-060
C17V
150ra
zener 600v
diode DB 3 C
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fuji 6mbp
Abstract: IGBT 6MBP 150 RA 060 100DC P611
Text: FUJI IGBT IPM 600V 6x150A 6MBP 150RA-060 SHÖSGTQSOe Intelligent Power Module R-Series n Maximum Ratings and Characteristics n Outline Drawing 1A bsolute Maxim um Ratings ( i > 25°c) Ite m s R a tin g s S y m b o ls V dc 450 D C B us V o lta q e (surqe)
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150RA-060
6x150A
T2307
0QD54bb
fuji 6mbp
IGBT 6MBP 150 RA 060
100DC
P611
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siemens igbt BSM 25 gal
Abstract: siemens igbt BSM 15 siemens igbt BSM 300 siemens igbt BSM 100 siemens igbt BSM 25 gd GD100D siemens igbt BSM 100 gd siemens igbt bsm 150 gd 120 C67076-A2505-A52
Text: SIEMENS IGBTLeistungsmodule Typ Type V IGBT Power Modules A ^ th J C P ,o, K^Esatftyp. K/W W V 3-Phasen-Vollbrücken Standard) Bestellnummer Ordering code Bild Figure 3-Phase full-bridges (Standard) BSM 15 GD 100 D 1000 6x15 0.80 150 2.8 C67076-A2500-A2
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C67076-A2500-A2
C67076-A2501-A2
C67076-A2504-A2
C67076-A2505-A2
C67076-A2506-A52
C67076-A2507-A522
C67076-A2009-A2
C67076-A2010-A2
C67076-A2011-A2
C67076-A2012-A2
siemens igbt BSM 25 gal
siemens igbt BSM 15
siemens igbt BSM 300
siemens igbt BSM 100
siemens igbt BSM 25 gd
GD100D
siemens igbt BSM 100 gd
siemens igbt bsm 150 gd 120
C67076-A2505-A52
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GAL 200 gb
Abstract: bsm 75 gd 120 dn2 BSM 300 GA 120 dls 2x15 75GB120DN2 E3224 E3226 BSM 15 GB
Text: Range 600 V-Types 3-Phase-Full-Bridges T ype ^th jc K/W < Plot ^cesat W V 3.5 2.9 1.6 1.6 1.2 1.2 0.6 30 35 80 80 100 100 200 2.1 2.1 2.1 2.1 2.1 2.1 2.1 10 15 20 20 30 30 50 DL DL DL DL E3224 DL DL E3224 DL 600 600 600 600 600 600 600 6x10 6x15 6x20 6x20
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E3224
E3226
6x200
2x150
2x200
IS6/10
34032T7
0D02210
GAL 200 gb
bsm 75 gd 120 dn2
BSM 300 GA 120 dls
2x15
75GB120DN2
BSM 15 GB
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Untitled
Abstract: No abstract text available
Text: IGBT Standard Modules Range Type 600 V-Types BSM BSM BSM BSM BSM BSM BSM 3-Phase-Full-Bridges Half-Bridges 1200 V-Types 3-Phase-Full-Bridges 8 Vce V 'c A 600 600 600 600 600 600 600 6x10 6x15 6x20 6x20 6x30 6x30 6x50 ^thjc K/W < ^tot W Vcesat V BSM 50 GD 60 DL E3226
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E3226
6x200
2x150
2x200
IS6/10
E3166
D0D2211
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10X32
Abstract: 8X12
Text: —— C u F \ 0.47 1 2.2 3.3 4.7 10 22 33 47 100 220 330 470 1000 2200 3300 4700 6800 10000 WV(V) R47 010 2R2 3R3 4R7 100 220 330 470 101 221 331 471 102 222 332 472 682 103 6.3 0J 10 1A 25 1E 16 1C I 5X11 6X12 6X15 8X15 10X20 10X32 13X25 13X36 16X32 16X40
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10X20
10X20
10X32
10X25
13X20
12X36
10X32
13X25
16X32
8X12
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Untitled
Abstract: No abstract text available
Text: GaAs Foundry Services PROCESS PE3 PE3 V2.00 Features • Typical RF Performance FC06 6X150 900 um FET 0.5 |im MBE MESFET Technology for High Power Applications MMICs up to 18 GHz 100 mm wafer diameter Layout and design assistance Space qualification Custom test and packaging
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6X150)
2/12GHZ
2/12GHZ
680/525mW/mm
20GHz
900um
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BSM15GD100D
Abstract: siemens igbt chip 15GD100D siemens afe circuit diagram siemens igbt BSM 25 gd siemens igbt BSM 100 gd
Text: SIEMENS IGBT Module BSM 15 GD 100 D Preliminary Data VCE = 1000 V lc =6x15 A • • • • • Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Circuit diagram: Fig. 3 b ' Type Ordering code BSM 15GD 100 D
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C67076-A2500-A2
BSM15GD100D
siemens igbt chip
15GD100D
siemens afe circuit diagram
siemens igbt BSM 25 gd
siemens igbt BSM 100 gd
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BUZ21
Abstract: No abstract text available
Text: /= T SGS-THOMSON ^7# M g»I[LI(gre(Q i[](g§ BUZ21 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 15 6x156 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source
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BUZ21
6x156
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63hl
Abstract: 6R12
Text: Catalog Search for type 066 Page 1 of 8 Cornell Dubilier Electronics, Inc Axial, 85°C and 105°C, Standard, Type 066 D ftft - Standard, OCiivX - Ma\ ill', O M R - I ligh Ripple Ideal for general purpose use where long life at rated temperature and operating voltage
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2/CS066
63hl
6R12
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