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    6R099 TRANSISTOR Search Results

    6R099 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    6R099 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6R099

    Abstract: CoolMOS Power Transistor IPP60R099CP IPP60R099 JESD22 SP000057021 6R099* TO220
    Text: IPP60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO220 R DS on ,max • Ultra low gate charge Q g,typ 650 V 0.099 Ω 60 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP60R099CP PG-TO220 SP000057021 6R099 6R099 CoolMOS Power Transistor IPP60R099CP IPP60R099 JESD22 SP000057021 6R099* TO220

    6r099 mosfet

    Abstract: 6R099 c25 diode to220 Transistor 6r099
    Text: IPP60R099CP CoolMOSTM Power Transistor Product Summary Features V DS • Worldwide best R ds,on in TO220 R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.099 Ω 60 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP60R099CP PG-TO220 SP000057021 6R099 6r099 mosfet 6R099 c25 diode to220 Transistor 6r099

    6R099

    Abstract: 6r099 mosfet infineon 6r099 mosfet 6r099 6r099 Transistor
    Text: IPB60R099CP CoolMOSTM Power Transistor Product Summary Features V DS • Worldwide best R ds,on in TO263 R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.099 Ω 60 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPB60R099CP PG-TO263-3-2 SP000088490 6R099 6R099 6r099 mosfet infineon 6r099 mosfet 6r099 6r099 Transistor

    6R099

    Abstract: IPW60R099CS 6r099 mosfet PG-TO-247-3 JESD22 transistor j25
    Text: IPW60R099CS CoolMOS TM Power Transistor Product Summary Features V DS • Lowest figure-of-merit R ON x Qg R DS on ,max • Extreme dv/dt rated Q g,typ 600 V 0.099 Ω 60 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R099CS PG-TO247-3 Q67045A5060 6R099 6R099 IPW60R099CS 6r099 mosfet PG-TO-247-3 JESD22 transistor j25

    6R099

    Abstract: 6r099 mosfet IPP60R099CS Transistor 6r099 mosfet 6r099 IPP60R099 JESD22 Q67045-A5018 infineon 6r099
    Text: IPP60R099CS CoolMOS TM Power Transistor Product Summary Features V DS • Worldwide best R ds,on in TO220 R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.099 Ω 60 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP60R099CS PG-TO220-3-1 Q67045A5018 6R099 6R099 6r099 mosfet IPP60R099CS Transistor 6r099 mosfet 6r099 IPP60R099 JESD22 Q67045-A5018 infineon 6r099

    IPW60R099CP 6R099

    Abstract: 6R099 6r099 mosfet IPW60R099CP mosfet 6r099 IPW60R099CP+6R099
    Text: IPW60R099CP CoolMOSTM Power Transistor Product Summary Features V DS • Lowest figure-of-merit R ON x Qg R DS on ,max • Extreme dv/dt rated Q g,typ 600 V 0.099 Ω 60 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R099CP PG-TO247-3-1 PG-TO247-3-1 SP000067147 6R099 IPW60R099CP 6R099 6R099 6r099 mosfet IPW60R099CP mosfet 6r099 IPW60R099CP+6R099

    6R099

    Abstract: 6r099 mosfet Transistor 6r099 SP000088490 6r099 Transistor mosfet 6r099 marking code ff p SMD Transistor IPB60R099CP
    Text: IPB60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO263 R DS on ,max • Ultra low gate charge 650 V 0.099 Ω 60 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPB60R099CP PG-TO263 SP000088490 6R099 6R099 6r099 mosfet Transistor 6r099 SP000088490 6r099 Transistor mosfet 6r099 marking code ff p SMD Transistor IPB60R099CP

    6R099

    Abstract: IPP60R099CP 6r099 mosfet 6R099* TO220
    Text: IPP60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO220 R DS on ,max • Ultra low gate charge Q g,typ 650 V 0.099 Ω 60 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP60R099CP PG-TO220 SP000057021 6R099 6R099 IPP60R099CP 6r099 mosfet 6R099* TO220

    6R099

    Abstract: IPW60R099CP 6R099 IPW60R099CP JESD22 SP000067147 6r099 mosfet Transistor 6r099
    Text: IPW60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg R DS on ,max • Extreme dv/dt rated Q g,typ 650 V 0.099 Ω 60 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R099CP PG-TO247-3-1 SP000067147 6R099 10gerous 6R099 IPW60R099CP 6R099 IPW60R099CP JESD22 SP000067147 6r099 mosfet Transistor 6r099

    6R099

    Abstract: IPW60R099CP 6R099 6r099 Transistor IPW60R099CP 6r099 mosfet PG-TO247 6R099 free download smps 450 W SP000067147 JESD22
    Text: IPW60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg R DS on ,max • Extreme dv/dt rated Q g,typ 650 V 0.099 Ω 60 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R099CP PG-TO247-3-1 SP000067147 6R099 10erous 6R099 IPW60R099CP 6R099 6r099 Transistor IPW60R099CP 6r099 mosfet PG-TO247 6R099 free download smps 450 W SP000067147 JESD22

    6R099

    Abstract: 6R099 TO 247 IPW60R099CP 6R099 SP000067147 IPW60R099CP JESD22
    Text: IPW60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg R DS on ,max • Extreme dv/dt rated Q g,typ 650 V 0.099 Ω 60 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R099CP PG-TO247-3-1 SP000067147 6R099 009-134-A O-247 6R099 6R099 TO 247 IPW60R099CP 6R099 SP000067147 IPW60R099CP JESD22

    6R099

    Abstract: IPB60R099CP smd marking code cp smd code F18 CoolMOS Power Transistor SMD MARKING CODE 102 TRANSISTOR SMD MARKING CODE ag JESD22 SP000088490 MOSFET SMD MARKING CODE
    Text: IPB60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO263 R DS on ,max • Ultra low gate charge 650 V 0.099 Ω 60 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPB60R099CP PG-TO263 SP000088490 6R099 6R099 IPB60R099CP smd marking code cp smd code F18 CoolMOS Power Transistor SMD MARKING CODE 102 TRANSISTOR SMD MARKING CODE ag JESD22 SP000088490 MOSFET SMD MARKING CODE

    6R099

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    Text: IPW60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg R DS on ,max • Extreme dv/dt rated Q g,typ 650 V 0.099 Ω 60 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R099CP PG-TO247-3-1 SP000067147 6R099 10erous 6R099 IPW60R099CP 6R099 IPW60R099CP JESD22 SP000067147 6r099 mosfet marking code D18

    6R099

    Abstract: IPB60R099CS smd code F18 infineon 6r099 PG-TO263-3-2 PG-TO-263-3-2 DF marking code smd transistor MOSFET MARKING CODE 7V
    Text: IPB60R099CS CoolMOSTM Power Transistor Product Summary Features V DS • Worldwide best R ds,on in TO263 R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.099 Ω 60 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPB60R099CS PG-TO263-3-2 SP000088490 6R099 6R099 IPB60R099CS smd code F18 infineon 6r099 PG-TO263-3-2 PG-TO-263-3-2 DF marking code smd transistor MOSFET MARKING CODE 7V

    6r099

    Abstract: IPW60R099CP 6R099
    Text: IPW60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg R DS on ,max • Extreme dv/dt rated Q g,typ 650 V 0.099 Ω 60 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R099CP PG-TO247-3-1 SP000067147 6R099 6r099 IPW60R099CP 6R099

    6r099

    Abstract: 6r099 mosfet mosfet 6r099 IPI60R099CP JESD22
    Text: IPI60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO220 R DS on ,max • Ultra low gate charge 650 V 0.099 Ω 60 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPI60R099CP PG-TO262 6R099 6r099 6r099 mosfet mosfet 6r099 IPI60R099CP JESD22