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    6R099 Price and Stock

    Vishay Dale WSL1206R0990FEA

    RES 0.099 OHM 1% 1/4W 1206
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    DigiKey WSL1206R0990FEA Reel 4,000
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    TE Connectivity YDG123A6R0998P1V01

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    Mouser Electronics YDG123A6R0998P1V01
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    Interstate Connecting Components YDG123A6R0998P1V01
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    Master Electronics YDG123A6R0998P1V01
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    TE Connectivity DG123A6R09-98S1-[V0A1]

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    TE Connectivity YDG123A6R0998S1VA1

    Circular Connector MIL-C-29600 Plug 3 Position Socket Contact Cable Mount Crimp - Bulk (Alt: YDG123A6R0998S1VA1)
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    Avnet Americas YDG123A6R0998S1VA1 Bulk 14 Weeks, 2 Days 25
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    YDG123A6R0998S1VA1 Bulk 17 Weeks, 6 Days 25
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    Mouser Electronics YDG123A6R0998S1VA1
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    Vishay Intertechnologies WSL1206R0990FEA

    WSL-1206 .099 1% EA e3 - Tape and Reel (Alt: WSL1206R0990FEA)
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    Avnet Americas WSL1206R0990FEA Reel 11 Weeks 4,000
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    Find more 6R099 price and stock on Findchips.com

    6R099 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R099C6 Data Sheet Rev. 0.9, 2009-09-07 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R099C6, IPB60R099C6


    Original     		IPx60R099C6 IPA60R099C6, IPB60R099C6 IPP60R099C6 IPW60R099C6 PDF

    Untitled

    Abstract: No abstract text available
    Text: IPP60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best R ds,on in TO220 • Ultra low gate charge PG-TO220-3-1 • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


    Original     		IPP60R099CPA PG-TO220-3-1 6R099A PDF

    6R099

    Abstract: 6R099A IPP60R099CPA IPP60R099 IPP60R099CP PG-TO220-3
    Text: IPP60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best R ds,on in TO220 • Ultra low gate charge PG-TO220-3-1 • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


    Original     		IPP60R099CPA PG-TO220-3-1 6R099A 6R099 6R099A IPP60R099CPA IPP60R099 IPP60R099CP PG-TO220-3 PDF

    6R099C6

    Abstract: 6R099 6r099c6 mosfet IPW60R099C6 IPx60R099C6 IPP60R099C6 CoolMOS TC 6R099C6 IPA60R099C6 TO-247 FULLPAK Package TRANSISTOR SMD MARKING CODE
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R099C6 Data Sheet Rev. 2.0, 2009-09-25 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R099C6, IPB60R099C6


    Original     		IPx60R099C6 IPA60R099C6, IPB60R099C6 IPP60R099C6 IPW60R099C6 6R099C6 6R099 6r099c6 mosfet IPW60R099C6 IPx60R099C6 CoolMOS TC 6R099C6 IPA60R099C6 TO-247 FULLPAK Package TRANSISTOR SMD MARKING CODE PDF

    6r099 mosfet

    Abstract: 6R099 c25 diode to220 Transistor 6r099
    Text: IPP60R099CP CoolMOSTM Power Transistor Product Summary Features V DS • Worldwide best R ds,on in TO220 R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.099 Ω 60 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPP60R099CP PG-TO220 SP000057021 6R099 6r099 mosfet 6R099 c25 diode to220 Transistor 6r099 PDF

    6R099

    Abstract: 6r099 mosfet infineon 6r099 mosfet 6r099 6r099 Transistor
    Text: IPB60R099CP CoolMOSTM Power Transistor Product Summary Features V DS • Worldwide best R ds,on in TO263 R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.099 Ω 60 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPB60R099CP PG-TO263-3-2 SP000088490 6R099 6R099 6r099 mosfet infineon 6r099 mosfet 6r099 6r099 Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: IPB60R099CPA CoolMOS Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best Rds,on in TO263 PG-TO263-3-2 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


    Original     		IPB60R099CPA PG-TO263-3-2 6R099A PDF

    PG-TO262-3-1

    Abstract: 6R099 df RN transistor A93V IPB60R099CPA IPB60R199CPA IPI60R099CPA IPW60R099CPA PG-TO247-3-41 6R099A
    Text: IPI60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features 600 V 0.105 Ω 60 nC • Worldwide best Rds,on in TO262 • Ultra low gate charge PG-TO262-3-1 • Extreme dv/dt rated • High peak current capability


    Original     		IPI60R099CPA PG-TO262-3-1 6R099A PG-TO263-3-2 PG-TO220-3-1 PG-TO247-3-41 PG-TO262-3-1 6R099 df RN transistor A93V IPB60R099CPA IPB60R199CPA IPI60R099CPA IPW60R099CPA PG-TO247-3-41 6R099A PDF

    6R099

    Abstract: CoolMOS Power Transistor IPP60R099CP IPP60R099 JESD22 SP000057021 6R099* TO220
    Text: IPP60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO220 R DS on ,max • Ultra low gate charge Q g,typ 650 V 0.099 Ω 60 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPP60R099CP PG-TO220 SP000057021 6R099 6R099 CoolMOS Power Transistor IPP60R099CP IPP60R099 JESD22 SP000057021 6R099* TO220 PDF

    6R099

    Abstract: No abstract text available
    Text: IPI60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO220 R DS on ,max • Ultra low gate charge Q g,typ 650 V 0.099 Ω 60 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPI60R099CP PG-TO262-3-1 PG-TO262 6R099P 6R099 PDF

    6r099a

    Abstract: 6R099 IPI60R099CPA
    Text: IPI60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best Rds,on in TO262 • Ultra low gate charge PG-TO262-3-1 • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


    Original     		IPI60R099CPA IPI60R099CPA PG-TO262-3-1 6R099A PG-TO262-3-1 6R099 PDF

    6r099a

    Abstract: 6r099 DIODE ED 11
    Text: IPW60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features 600 V 0.105 Ω 60 nC • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated PG-TO247-3 • High peak current capability


    Original     		IPW60R099CPA 6R099A PG-TO247-3 PG-TO247-3 IPW60PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 PG-TO247-3-41 6r099 DIODE ED 11 PDF

    6r099

    Abstract: df RN transistor
    Text: IPP60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Features ed nd me ns om sig ec de tr w e no rn fo Q g,typ 600 V 0.105 Ω 60 nC • Worldwide best R ds,on in TO220 • Ultra low gate charge PG-TO220-3-1 • Extreme dv/dt rated • High peak current capability


    Original     		IPP60R099CPA 6R099A PG-TO220-3-1 PG-TO220-3-1 APG-TO263-3-2 PG-TO262-3-1 PG-TO247-3-41 PG-TO247-3-41 6r099 df RN transistor PDF

    6R099

    Abstract: IPB60R099CP smd marking code cp smd code F18 CoolMOS Power Transistor SMD MARKING CODE 102 TRANSISTOR SMD MARKING CODE ag JESD22 SP000088490 MOSFET SMD MARKING CODE
    Text: IPB60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO263 R DS on ,max • Ultra low gate charge 650 V 0.099 Ω 60 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPB60R099CP PG-TO263 SP000088490 6R099 6R099 IPB60R099CP smd marking code cp smd code F18 CoolMOS Power Transistor SMD MARKING CODE 102 TRANSISTOR SMD MARKING CODE ag JESD22 SP000088490 MOSFET SMD MARKING CODE PDF

    6R099

    Abstract: IPB60R099CS smd code F18 infineon 6r099 PG-TO263-3-2 PG-TO-263-3-2 DF marking code smd transistor MOSFET MARKING CODE 7V
    Text: IPB60R099CS CoolMOSTM Power Transistor Product Summary Features V DS • Worldwide best R ds,on in TO263 R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.099 Ω 60 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPB60R099CS PG-TO263-3-2 SP000088490 6R099 6R099 IPB60R099CS smd code F18 infineon 6r099 PG-TO263-3-2 PG-TO-263-3-2 DF marking code smd transistor MOSFET MARKING CODE 7V PDF

    6R099C6

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 IPx60R099C6 IPW60R099C6 TRANSISTOR SMD MARKING CODE 604 IPB60R099C6 to247 pcb footprint 6R099 TRANSISTOR SMD MARKING CODE IPA60R099C6
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R099C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPA60R099C6, IPB60R099C6 IPP60R099C6 IPW60R099C6


    Original     		IPx60R099C6 IPA60R099C6, IPB60R099C6 IPP60R099C6 IPW60R099C6 6R099C6 MOSFET TRANSISTOR SMD MARKING CODE A1 IPx60R099C6 IPW60R099C6 TRANSISTOR SMD MARKING CODE 604 IPB60R099C6 to247 pcb footprint 6R099 TRANSISTOR SMD MARKING CODE IPA60R099C6 PDF

    IPW60R099CPA

    Abstract: PG-TO247 6R099A IPI60R099CPA IPB60R099CPA IPB60R199CPA PG-TO-247-3
    Text: IPW60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated PG-TO247-3 • High peak current capability • Automotive AEC Q101 qualified


    Original     		IPW60R099CPA PG-TO247-3 6R099A PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 IPW60R099CPA PG-TO247 6R099A IPI60R099CPA IPB60R099CPA IPB60R199CPA PG-TO-247-3 PDF

    IPP60R099CPA

    Abstract: IPB60R099CPA IPB60R199CPA PG-TO220-3 IPW60R045CPA 6R099A IPC60R075CPA
    Text: IPP60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best R ds,on in TO220 • Ultra low gate charge PG-TO220-3-1 • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


    Original     		IPP60R099CPA PG-TO220-3-1 6R099A PG-TO262-3-1 PG-TO247-3-41 IPP60R099CPA IPB60R099CPA IPB60R199CPA PG-TO220-3 IPW60R045CPA 6R099A IPC60R075CPA PDF

    6R099

    Abstract: 6r099 mosfet
    Text: IPP60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO220 R DS on ,max • Ultra low gate charge Q g,typ 650 V 0.099 Ω 60 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPP60R099CP PG-TO220 SP000057021 6R099 6R099 6r099 mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 600VCoolMOS™P6PowerTransistor IPx60R099P6 DataSheet Rev.2.0 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 1Description


    Original     		IPx60R099P6 IPW60R099P6, IPP60R099P6, IPA60R099P6 O-247 O-220 PDF

    6r099

    Abstract: IPW60R099CP 6R099
    Text: IPW60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg R DS on ,max • Extreme dv/dt rated Q g,typ 650 V 0.099 Ω 60 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R099CP PG-TO247-3-1 SP000067147 6R099 6r099 IPW60R099CP 6R099 PDF

    6R099

    Abstract: ipb60r099cpa PG-TO263-3-2 IPB60R099 6R099A
    Text: IPB60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best Rds,on in TO263 PG-TO263-3-2 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


    Original     		IPB60R099CPA IPB60R099CPA PG-TO263-3-2 6R099A PG-TO263-3-2 6R099 IPB60R099 PDF

    6r099

    Abstract: 6r099 mosfet mosfet 6r099 IPI60R099CP JESD22
    Text: IPI60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO220 R DS on ,max • Ultra low gate charge 650 V 0.099 Ω 60 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPI60R099CP PG-TO262 6R099 6r099 6r099 mosfet mosfet 6r099 IPI60R099CP JESD22 PDF

    6R099

    Abstract: 6r099 mosfet Transistor 6r099 SP000088490 6r099 Transistor mosfet 6r099 marking code ff p SMD Transistor IPB60R099CP
    Text: IPB60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO263 R DS on ,max • Ultra low gate charge 650 V 0.099 Ω 60 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPB60R099CP PG-TO263 SP000088490 6R099 6R099 6r099 mosfet Transistor 6r099 SP000088490 6r099 Transistor mosfet 6r099 marking code ff p SMD Transistor IPB60R099CP PDF