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    6MBP50RJ120 Search Results

    6MBP50RJ120 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    6MBP50RJ120 Fuji Electric IGBT IPM Original PDF
    6MBP50RJ120 Fuji Electric IGBT IPM R-series 1200V class 1200V / 50A 6 in one-package Original PDF
    6MBP50RJ120 Fuji Electric 1200V / 50A 6 in one-package Original PDF

    6MBP50RJ120 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 6MBP50RJ120 1200V / 50A 6 in one-package IGBT IPM R-series 1200V class Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs. · Low power loss and soft switching. · High performance and high reliability IGBT with overheating protection.


    Original
    6MBP50RJ120 PDF

    all transistor P621

    Abstract: P621 P621 capacitor 6MBP50RJ120 AC2500 HCPL4504 TLP521 300VVcc failure-causing
    Text: SPECIFICATION Device Name : IGBT - IPM Type Name : 6MBP50RJ120 Spec. No. : MS6M 0710 Fuji Electric Co.,Ltd. Matsumoto Factory Feb. 05 ‘03 N.Matsuda Feb. 05 ‘03 Nishiura Feb.-05 -‘03 K.Yamada T.Fujihira MS6M 0710 a 1 22 H04-004-07 Revised Records Date


    Original
    6MBP50RJ120 H04-004-07 Feb-05- H04-004-06 H04-004-03 all transistor P621 P621 P621 capacitor 6MBP50RJ120 AC2500 HCPL4504 TLP521 300VVcc failure-causing PDF

    6mbp20rta060

    Abstract: TLP521-1GR 6MBP15RA120 7MBP50RA120 application note P621 TOSHIBa 6mbp50rt REH984 6MBP150TEA060 P621 6mbp100ra120
    Text: Quality is our message FUJI IGBT–IPM APPLICATION MANUAL Sep. 2004 REH983a CONTENTS Chapter 1 Features 1. GBT-IPMs Characteristics .1-2 2. IPM Characteristics by Series .1-4


    Original
    REH983a 6mbp20rta060 TLP521-1GR 6MBP15RA120 7MBP50RA120 application note P621 TOSHIBa 6mbp50rt REH984 6MBP150TEA060 P621 6mbp100ra120 PDF

    mp2a5100

    Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
    Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors


    Original
    RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28 PDF

    2MBI450U4E-120

    Abstract: 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120
    Text: パワーデバイス/Power Devices IGBT • IGBTモジュールの特長 Features of the IGBT Module 第6世代IGBTモジュール Vシリーズ 6th Gen. IGBT Module V-series ■特長 Features パッケージ小型化と出力のパワー UP を実現!


    Original
    max175 2MBI600TN-060V 2MBI450UN-120V 2MBP600UN-120V 2MBI450U4E-120 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120 PDF