2048 x 1 ccd linear array
Abstract: No abstract text available
Text: IMAGE SENSORS DATA SHEET FTF3020C-HS 6M Full-Frame CCD Image Sensor Product specification DALSA Professional Imaging 2007 September 5 DALSA Professional Imaging Product Specification 6M Full-Frame CCD Image Sensor FTF3020C-HS • 35mm film compatible image format 36 x 24 mm
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FTF3020C-HS
FTF3020C-HS
3072H
2048 x 1 ccd linear array
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Allen-Bradley MSR127
Abstract: MSR126 MSR126.1T 440R-N23132 1794-PS3 Allen-Bradley 1794-PS3 GuardMaster msr127 440R-N23135 440R-N23131
Text: Presence Sensing Safety Devices Safety Light Curtains Point of Operation Control Maximum scanning range 6m/18m 19.69ft/59.06ft Resolution (object sensitivity) 14mm/30mm (0.55in/1.18in) Maximum height of protective field 1814mm/1832mm (71.4in/72.1in) Minimum height of protective field
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6m/18m
69ft/59
14mm/30mm
55in/1
1814mm/1832mm
4in/72
314mm/332
36in/13
314mm.
1832mm
Allen-Bradley MSR127
MSR126
MSR126.1T
440R-N23132
1794-PS3
Allen-Bradley 1794-PS3
GuardMaster
msr127
440R-N23135
440R-N23131
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Untitled
Abstract: No abstract text available
Text: High-Speed Triple Differential Receiver with Comparators AD8143 Preliminary Technical Data FEATURES PINOUT DIAGRAM High Speed 300MHz -3dB Bandwidth @ G = +1, VO = 1 V P-P 1000V/µs Slew Rate High CMRR: 70dB @ 10MHz High Differential Input Impedance: 6MΩ
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AD8143
300MHz
000V/Â
10MHz
32-Pin
AD8143
MO-220-VHHD-2
32-Lead
CP-32-3)
AD8143ACPZ-R21
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GI85L02
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2005/11/28 REVISED DATE : GI85L02 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 25V 6m 85A Description The GI85L02 provide the designer with the best combination of fast switching, ruggedized device design, low
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GI85L02
GI85L02
O-251)
O-251
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Untitled
Abstract: No abstract text available
Text: CED83A3/CEU83A3 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 80A, RDS ON = 6mΩ @VGS = 10V. RDS(ON) = 9mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D
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CED83A3/CEU83A3
O-251
O-252
O-251
25aximum
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GU85L02
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2005/12/06 REVISED DATE : GU85L02 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 25V 6m 85A Description The GU85L02 provide the designer with the best combination of fast switching, ruggedized device design, low
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GU85L02
GU85L02
O-263
10eserved.
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GJ85L02
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2005/11/28 REVISED DATE : GJ85L02 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 25V 6m 85A Description The GJ85L02 provide the designer with the best combination of fast switching, ruggedized device design, low
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GJ85L02
GJ85L02
O-252
O-252
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Untitled
Abstract: No abstract text available
Text: DC2958-2 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 500 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.45Â @If (A)100m Ct{Cj} Nom. (F) Junction Cap.950f Carrier Lifetime (S)2.0u @I(F) (test) (A)10m @I(R) (A) (Test Condition)6m
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DC2958-2
StyleDO-204AA
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GE85L02
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2005/12/06 REVISED DATE : GE85L02 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 25V 6m 85A Description The GE85L02 provide the designer with the best combination of fast switching, ruggedized device design, low
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GE85L02
GE85L02
O-220)
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA0324A 2SK4065 N-Channel Power MOSFET http://onsemi.com 75V, 100A, 6mΩ, TO-263-2L Features • • ON-resistance RDS on 1=4.6mΩ (typ.) 4V drive • Input capacitance Ciss=12200pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C
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ENA0324A
2SK4065
O-263-2L
12200pF
PW10s,
L200H,
A0324-7/7
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CED83A3
Abstract: No abstract text available
Text: CED83A3/CEU83A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 80A, RDS ON = 6mΩ @VGS = 10V. RDS(ON) = 9mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.
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CED83A3/CEU83A3
O-251
O-252
O-251
CED83A3
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AD8143
Abstract: AD8133 MO-220-VHHD-2 CP-32-3
Text: High-Speed Triple Differential Receiver with Comparators AD8143 Preliminary Technical Data FEATURES PINOUT DIAGRAM High Speed 300MHz, 1000V/ µs @ G = 1, VO = 1 V P-P High CMRR: 70dB @ 10MHz High Differential Input Impedance: 6MΩ Imput Common Mode Range: ± 10 V ± 12 V Supplies
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AD8143
300MHz,
000V/
10MHz
32-Pin
AD8143
MO-220-VHHD-2
32-Lead
CP-32-3
AD8143ACPZ-R21
AD8133
MO-220-VHHD-2
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Untitled
Abstract: No abstract text available
Text: SSM85L02H,J N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D Simple Drive Requirement Fast Switching G BV DSS 25V R DS ON 6mΩ ID 85A S Description G D S The SSM85L02H is in theTO-252 package, which is widely preferred for commercial and industrial surface mount applications, and is well suited for
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SSM85L02H
theTO-252
O-251
SSM85L02J)
O-252
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varistor k60
Abstract: K30 varistor varistor k30 ZV30K0603
Text: Multilayer Technology Varistor Plus ZV Series Low Voltage SMD Varistors SEI Electronics Inc. • P.O. Box 58789 • Raleigh, NC 27658-8789 • Telephone: 919 850-9500 • FAX: (919) 850-9504 Toll Free: (888) SEI-SEI-SEI • www.seielect.com • email: marketing@seielect.com • ISO 9002 / QS 9000 Registered
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varist02
varistor k60
K30 varistor
varistor k30
ZV30K0603
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Untitled
Abstract: No abstract text available
Text: 16Mx72 bits Unbuffered DDR SO-DIMM HYMD216726C L 6-M/K/H/L DESCRIPTION Hynix HYMD216726C(L)6-M/K/H/L series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 16Mx72 high-speed memory arrays. Hynix HYMD216726C(L)6-M/K/
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16Mx72
HYMD216726C
184-pin
16Mx16
400mil
184pin
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toko skm3
Abstract: No abstract text available
Text: r^TOKO TYPE CFSK FM Ceram ic Filters 157 TYPE CFSK Standard S Series Dimensions l Ji nt. niM 3 5M ax SKM1 SKM3 SKM2 l 6M ax - * - X 1 Description • FM-IF step ceramic filters developed for use in compact slimline sets. • Increased number of bandwidth variations, ideal for BS
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t30KHz;
25KHz
20KHz
HP4194A
toko skm3
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20R4CT-3
Abstract: No abstract text available
Text: PRELIMINARY DATASHEET_ A 0 O C >Û Oj 20R4CT-3 40 A M P SURFACE HYPER FAST FOSITIV'E SSDI MOUNT RECTIFIER 14849 FIRESTONE BLVD. LA MIRADA. CA 90638 TEL: 213 921-9660 FAX: (213) 921-2396 C E N T E R TAF> 200 V O L T S CASE FEATURES STYLE 6M JPA or
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20R4CT-3
O-254
500mA,
250mA)
20R4CT-3
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PEB22822
Abstract: PEB22811
Text: is k h E L M VDSL CO Tx PASS FILTER DT 6 0 - 2008 D d B to -10 ft ft ft ft •20 ft ft -30 -40 DT60-2008D •DELTAXXXX y y y y -50 -60 -70 500K 900K 2M y y 3M 4M 5M 6M 7M 7.9M FREQUENCY (d B ) 40 30 20 10 -10 FEATURE -20 -30 -40 • Design to meet UH 950
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DT60-2008D
PEB22822
PEB22811
900KHz
900KHz
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atz drawings
Abstract: No abstract text available
Text: 6M Bl 10OF-060 100A *± : Outline Drawings IG B T ^EiSzL-JU IGBT MODULE : Features • Low S a tu ra tio n V o lta g e • W EE» ( M O S y - M * iS ) • V o lta g e D rive V a rie ty o f P ow er C apacity Series : A p p lica tio n s • i — $ — S E W ffl'f > ' < — 9
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10OF-060
I95t/R89)
Shl50
atz drawings
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ICX409AK
Abstract: FZIT ccd sony super HAD LTZ4
Text: SONY IC X 409A K £fÄ 6m m 1 / 3 M PA Lti nü ICX409AK(âPALÆ’Â (Ot^M6mm ( 1 / 3 Í Í ) # 7 ~ ? ÿ ' f > M C C D |ü ^ ftít f i t t o » pdhICX0 5 9 C K 1 I^ L , D i '> V , S 7 * - a, / N & L i ¿ iJt, i rm m m & m l^ ä - c , f e * ^ 7, o m # iw r H
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ICX409AK
qDnICX059CKÂ
ICX059CKj
-15dB3tflCX059CK
HlCX059CKj
12ffiff
ICX409AK
FZIT
ccd sony super HAD
LTZ4
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Untitled
Abstract: No abstract text available
Text: .5 0 0 MA X . .69 9 MA X . [1 2 .7 0 ] .5 3 0 MAX . [1 3 .4 6 ] g DOT LO CA T ES TERM. LOT C O D E #1 - > & (6?)(6M)\ DATE COD E .6 4 4 [1 6 .3 6 ] PRI G> <10) & <D <D CD- AREA R E P R E S E N T S T E R M IN A L PAD D IM E N S IO N S .0 5 0 (9 ) [1 .2 7 ]
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t1-17]
IEC950,
EN60950,
UL1950/CSA
ZS3260:
E205930
E205930
50819R
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Untitled
Abstract: No abstract text available
Text: mmmm ^ I Z 'C CKc +105°C Standard Radial Lead Aluminum Electrolytic Capacitors I: M L r For all long life ge neral p u rp o s e a p p lic a tio n s FEATURES • Standard size Wide capacitance range: 0.47 pF to 22,000 pF ■ Wide voltage range: 6.3 WVDC to 450 WVDC
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120Hz,
16x35
18x31
16x25
18x42
18x35
10x16
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e62320
Abstract: E 62320 26MT120A 36MB80B E.62320 26MB10B 36MB60B 36MB40B 6m 950 36MB100B
Text: Power Modules International iö r !R e c tifie r Single Phase Diode Bridges 10-35 Amps Part Number U.S. Series 'O TC VFM @ If 4 Vr r m 00 100JB05L 100JB1L 100JB2L 100JB4L 100JB6L 100JB8L 100JB10L 100JB12L 50 100 200 400 600 800 1000 1200 2 6 M B 05A 26M B10A
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100JB05L
100JB1L
100JB2L
100JB4L
100JB6L
100JB8L
100JB10L
100JB12L
26MB1
B120A
e62320
E 62320
26MT120A
36MB80B
E.62320
26MB10B
36MB60B
36MB40B
6m 950
36MB100B
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Untitled
Abstract: No abstract text available
Text: KSS E1102-95013-AA1 1 9 95.6 C R Y S T A L O S C I L L A T O R DATA SHEET V C - D T C X O - 1 3 A D I M E N S I O N S [FEATURES] ° Digital processing Tempreature Compensad Crystal Oscillator. ° Excellent Frequency temperature charactteristized ° SineWave O u tp u t.
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E1102-95013-AA1
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