M306KAFCLRP
Abstract: M306KA ST PS20 datasheet TQFP144 DIMENSION 6ka transistor S4d2 Xa2 TRANSISTOR 16MHZ M306K7F8LRP PWM401
Text: M16C/6KA Group REJ03B0100-0100Z Rev.1.00 Jul 16, 2004 SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER Description Description The M16C/6KA group of single-chip microcomputers are built using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged in a 144-pin plastic molded QFP.
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M16C/6KA
REJ03B0100-0100Z
16-BIT
M16C/60
144-pin
M306KAFCLRP
M306KA
ST PS20 datasheet
TQFP144 DIMENSION
6ka transistor
S4d2
Xa2 TRANSISTOR
16MHZ
M306K7F8LRP
PWM401
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M306KAFCLRP
Abstract: S4d2 16MHZ M306K7F8LRP m306kaf M306KA
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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IGBT 1500
Abstract: der FZ 1600 R 12 KF4 ic 7800 IGBT module FZ 1200
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997
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ic 7800
Abstract: 16KF4
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997
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6ka transistor
Abstract: IGBT 1500 ic 7800 R17KF4
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 17 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997
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Untitled
Abstract: No abstract text available
Text: IRG7CH37K10EF INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1200V IC Nominal = 15A TJ(max) = 175°C G VCE(on) typ = 1.9V @ IC= 15A E n-channel Applications • Medium Power Drives UPS HEV Inverter Welding G C E Gate Collector Emitter Features
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IRG7CH37K10EF
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997
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IGBT 1500
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997
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EME-6300H
Abstract: 6300H mos die CY7C1399 CY7C197 CY7C199
Text: Qualification Report June, 1995 - QTP# 94465 Version 1.0 RAM2.8 TRANSISTOR FOR RAM2.5 PROCESS PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part supplied:
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CY7C199
7C199C
Jan/1995
MeC199
28-pin,
300-mil
-1500V
EME-6300H
6300H
mos die
CY7C1399
CY7C197
CY7C199
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES Prepared by S. Iura Revision: 1.1 Approved by H. Yamaguchi : Apr. 2009 CM1200HC-90R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HC-90R ● IC ………………………
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CM1200HC-90R
HVM-1057-A
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CM1200HC-90R
Abstract: 6ka transistor
Text: Prepared by S. Iura Approved by H. Yamaguchi : Apr. 2009 MITSUBISHI HVIGBT MODULES Revision: 1.1 CM1200HC-90R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HC-90R ● IC ………………………
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CM1200HC-90R
HVM-1057-A
CM1200HC-90R
6ka transistor
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TRANSISTOR M 1061
Abstract: transistor h 1061 transistor 1061 TR 1061 1061 transistor CM1000HC-66R
Text: MITSUBISHI HVIGBT MODULES Prepared by S. Iura Revision: 1.0 Approved by H. Yamaguchi : Jun. 2009 CM1000HC-66R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1000HC-66R N/A ● IC ………………………
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CM1000HC-66R
HVM-1061
TRANSISTOR M 1061
transistor h 1061
transistor 1061
TR 1061
1061 transistor
CM1000HC-66R
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CM1000E4C-66R
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES Prepared by S. Iura Revision: 1.2 Approved by H. Yamaguchi : Dec. 2008 CM1000E4C-66R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1000E4C-66R ● IC ………………………
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CM1000E4C-66R
HVM-1055-A
CM1000E4C-66R
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Transistor GE 67
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES ARY LIMIN . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som CM1000E4C-66R PRE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE
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CM1000E4C-66R
Transistor GE 67
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CY7C106A
Abstract: 84-1MISR4 CY7C109 R28 transistors
Text: Cypress Semiconductor Qualification Report QTP# 97253, VERSION 1.0 August, 1997 1 Meg SRAM, R28 Technology, Fab 4 Qualification CY7C106A 256K x 4 Static RAM CY7C109 128K x 8 Static RAM Cypress Semiconductor 1 Meg SRAM, R28 Technology, Fab 4 Devices:CY7C106A/CY7C109
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CY7C106A
CY7C109
CY7C106A/CY7C109
32-pin,
CY7C109-VC
85C/85
CY7C106A
84-1MISR4
CY7C109
R28 transistors
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CM1000E4C-66R
Abstract: No abstract text available
Text: 三菱半導体〈HVIGBTモジュール〉 CM1000E4C-66R 開発中 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor モジュール 大電力スイッチング用 絶縁形 CM1000E4C-66R ¡IC …………………………………………… 1000A
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CM1000E4C-66R
CM1000E4C-66R
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PP GP30
Abstract: Power Concepts 6KA24 diode Intertec Communications
Text: AC LINE D - DIVERTER Z - IMPEDANCE C - CLAMP Fig. 4 Fig. 5 G eneral topology for a protection network C ircuit providing a high level o f protection with only .5 ohm impedance the 77 volt spike appears across only one capacitor; with 3000A of input current the
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6KA24TVS
6KA24
15PSI
PP GP30
Power Concepts
6KA24 diode
Intertec Communications
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Untitled
Abstract: No abstract text available
Text: HFA1100 H 1120 H A R R IS S E M I C O N D U C T O R Ultra High-Speed Current Feedback Amplifier September 1992 Features Description • Low Distortion 30MHz . -56dBc The HFA1100, 1120 are a family of high-speed, wideband, fast settling current feedback amplifiers. Built with Harris' proprietary
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HFA1100
30MHz)
-56dBc
HFA1100,
850MHz
1-800-4-HARRIS
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Sample and Hold Amplifiers
Abstract: HA5350 5VP4
Text: & tt" HA5350, HA5351 PRELIMINARY Ultra Fast 50ns Sample and Hold Amplifiers March 1993 Features Description • Ultra Fast Acquisition. 50ns The HA5350/51 are ultra-fast sample/hold amplifiers designed for a wide range of applications including A/D conversion,
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HA5350,
HA5351
HA5350/51
HBC-10
HA5350
HA5351
90x19±
HA53S0,
Sample and Hold Amplifiers
5VP4
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ha5350
Abstract: HA5350IP
Text: U U HA5350, HA5351 h a rr is S E M I C O N D U C T O R * W W W PRELIMINARY W 7 • » W W W M Ultra Fast 50ns Sample and Hold Amplifiers March 1993 Description Features • Ultra Fast Acquisition. 50ns •
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HA5350,
HA5351
200mW
-68dBc
HA535d
HAS351
ha5350
HA5350IP
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Untitled
Abstract: No abstract text available
Text: HARRIS SEHICON] SECTOR S E M I C O N D U C T O R LIE » • M3 0 2 P 7 1 0 D4 h T 42 G3 1 HHAS HA5350, HA5351 * ■ PRELIMINARY mm ■ W ■ Ultra Fast 50ns) Sample and Hold Amplifiers March1993 Features Description • Ultra Fast Acquisition. 50ns
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HA5350,
HA5351
HA5350/51
HBC-10
HA53S0,
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video out put switcher
Abstract: 4600CB
Text: h a r r i s H S E M I C O N D U C T O R K M A 4 6 480MHz, Video Buffer with Output Disable November 1996 Features Description • Low Power Dissipation. 105mW The HA4600 is a very wide bandwidth, unity gain buffer ideal
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480MHz,
HA4600
105mW
HFA1112
HFA111S
10kfi
HA4600
video out put switcher
4600CB
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Untitled
Abstract: No abstract text available
Text: HARRIS S E M I C O N D U C T O R u a 4 6 0 0 Ê M 480MHz, Video Buffer with Output Disable November 1996 Description Features • Low Power D is s ip a tio n . 105mW • Sym metrical Slew R a te s . 1700V/ns
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480MHz,
105mW
700V/ns
250MHz
HA4600
SOURCE11
SOURCE12
SOURCE15
HA4600
HA4404
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Untitled
Abstract: No abstract text available
Text: m U U HA4244 HARRIS S E M I C O N D U C T O R 480MHz, 1 x 1 Video Crosspoint Switch with Synchronous Enable November 1996 Description Features • Low Power D is s ip a tio n . 105mW • Sym metrical Slew R a te s . 1700V/^s
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HA4244
480MHz,
HA4244
910nm
483jim
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