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    6F 128 Search Results

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    6F 128 Price and Stock

    PEI Genesis KPT06F12-8SF42

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    PEI Genesis KPT06F12-8SF85

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    PEI Genesis KPT06F12-8PF42

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    NXP Semiconductors MKV46F128VLH16

    IC MCU 32BIT 128KB FLASH 64LQFP
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    DigiKey MKV46F128VLH16 Tray 150 1
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    ITT Interconnect Solutions KPT06F12-8S

    26482 - STYLE SERIES I & MIL BAT
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    DigiKey KPT06F12-8S Bag 48 1
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    Interstate Connecting Components KPT06F12-8S
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    PEI Genesis KPT06F12-8S 253 1
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    Master Electronics KPT06F12-8S 51
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    6F 128 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2350 034 10102

    Abstract: 7405 9727
    Text: GALI-6F Performance Data NOTE: Use PDF Bookmarks to view DATA at required conditions TYPE: MMIC Amplifier MODEL: GALI-6F Reference Data: RDF-1245E S PARAMETERS are presented in dB/deg Format TEST CONDITIONS: INPUT POWER = -15dBm, Icc = 50mA, Vd = 4.64V @Temperature = +25degC


    Original     		PDF RDF-1245E -15dBm, 25degC 2350 034 10102 7405 9727

    MP1410

    Abstract: CROUSE-HINDS EJB EJB241810 EJB060404-SA EJB080806-SA EJB161606 EJB241808 EJB242408 EJB362408 EJB-MP1812
    Text: 2: 5: SYS19: BASE2 PDFINFO 50: 95: 98: JOB: CRTEST06-3128-0 Name: 6F-128 6F 100: DATE: JAN 19 2006 Time: 6:18:06 PM Operator: RB EJB Junction Boxes COLOR: CMYK TCP: 15001 Typedriver Name: TS name csm no.: 100 Cl. I, Div. 1 & 2, Groups B,C,D Cl. II, Div. 1, Groups E,F,G


    Original     		PDF SYS19: CRTEST06-3128-0 6F-128 oB181206 EJB181208 EJB241208 EJB241210 EJB241808 EJB241810 EJB242408 MP1410 CROUSE-HINDS EJB EJB060404-SA EJB080806-SA EJB161606 EJB362408 EJB-MP1812

    fu 024 n

    Abstract: No abstract text available
    Text: Mini-Circuits - Specification for Amplifier - GALI-6F Amplifier print this page GALI-6F Frequency GAIN, dB Maximum Power, dBm Dynamic Range MHz Output Input NF 1 dB Min. (no dB Comp. damage) Typ. IP3 dBm Typ. DC-4000 10.00 +15.80 +14.30 +20.00 4.50 Lw=low range(fL to fU/2) U=upper range(fU/2 to fU)


    Original     		PDF DC-4000 Amp10000 fu 024 n

    JESD22-A114D

    Abstract: FLM1213-6F
    Text: FLM1213-6F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=37.5dBm Typ. ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: hadd=27%(Typ.) ・Low IM3 =-46dBc(Typ.) @Po=26.5dBm ・Broad Band: 12.7～13.2GHz ・Impedance Matched Zin/Zout = 50W


    Original     		PDF FLM1213-6F -46dBc FLM1213-6F 1906B, JESD22-A114D

    resistor 10k

    Abstract: OV7660 Mi0360 OV9630 image sensor omnivision ov7660 driver omnivision HV7131R MI1300 Micron CMOS sensor VGA usb to VGA
    Text: SQ930C High-Speed USB 2.0 Video Camera Controller Brief Specification Version 1.3 - April 22nd , 2005 SERVICE & QUALITY TECHNOLOGY CO., LTD. 6F, No.150, Sec.4 Chengde Rd., Shrlin Chiu 111, Taipei, Taiwan, R.O.C. Tel: 886-2-66111177 Fax: 886-2-66106777 http://www.sq.com.tw/


    Original     		PDF SQ930C SQ930C BE049302 LFBGA64 64-ball LQFP80 80-pin resistor 10k OV7660 Mi0360 OV9630 image sensor omnivision ov7660 driver omnivision HV7131R MI1300 Micron CMOS sensor VGA usb to VGA

    Untitled

    Abstract: No abstract text available
    Text: FLM7785-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: hadd = 31% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50W


    Original     		PDF FLM7785-6F -46dBc FLM7785-6F FCSI0598M200

    CM6303

    Abstract: CM630 AEC 104 24c02 mcu audio 24C02 LQFP-64 103-1 MAG-IC voip CIRCUIT DIAGRAM with camera 24c02 eeprom circuit diagram echo mixer circuit diagram
    Text: USB Audio Solution for Multimedia and Voice Applications CM6303 USB Audio Single Chip with SW AEC Specification Datasheet Version 1.61 C-MEDIA ELECTRONICS INC. TEL: 886-2-8773-1100 FAX: 886-2-8773-2211 6F, 100, Sec. 4, Civil Boulevard, Taipei, Taiwan 106, R.O.C.


    Original     		PDF CM6303 CM6303 CM630 AEC 104 24c02 mcu audio 24C02 LQFP-64 103-1 MAG-IC voip CIRCUIT DIAGRAM with camera 24c02 eeprom circuit diagram echo mixer circuit diagram

    osd font

    Abstract: pvde2 HSYNC, VSYNC, DE, input, output video scaler lcd monitor scaler ic pht 094 syntek STK96C100 phsb 6040MHz
    Text: 太欣半導體股份有限公司 Syntek Semiconductor Co., Ltd. STK96C100 APPLICATION NOTE For Internal Users Only by SYNTEK =STK96C100= Flat Panel Display Scaler IC Ver. 0.9 DESIGN CENTER 6F, YU FENG BLDG. 317 SUNG-CHANG RD., TAIPEI, TAIWAN, R.O.C.


    Original     		PDF STK96C100 STK96C100= osd font pvde2 HSYNC, VSYNC, DE, input, output video scaler lcd monitor scaler ic pht 094 syntek STK96C100 phsb 6040MHz

    Untitled

    Abstract: No abstract text available
    Text: FLM1213-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM1213-6F -45dBc 25dBm FLM1213-6F

    Untitled

    Abstract: No abstract text available
    Text: FLM1415-6F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 37.0dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 20% (Typ.) Low IM3 = -45dBc@Po = 26.0dBm (Typ.) Broad Band: 14.5 ~ 15.3GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM1415-6F -45dBc FLM1415-6F

    FLM1415-6F

    Abstract: No abstract text available
    Text: FLM1415-6F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 37.0dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 20% (Typ.) Low IM3 = -45dBc@Po = 26.0dBm (Typ.) Broad Band: 14.5 ~ 15.3GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM1415-6F -45dBc FLM1415-6F

    fujitsu GHz gaas fet

    Abstract: No abstract text available
    Text: FLM1415-6F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 37.0dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 20% (Typ.) Low IM3 = -45dBc@Po = 26.0dBm (Typ.) Broad Band: 14.5 ~ 15.3GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM1415-6F -45dBc FLM1415-6F FCSI0598M200 fujitsu GHz gaas fet

    Untitled

    Abstract: No abstract text available
    Text: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM1011-6F -45dBc 25dBm FLM1011-6F Vol88

    FLM7785-6F

    Abstract: No abstract text available
    Text: FLM7785-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 31% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM7785-6F -46dBc FLM7785-6F

    Untitled

    Abstract: No abstract text available
    Text: FLM1213-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: hadd = 27% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50W


    Original     		PDF FLM1213-6F -45dBc 25dBm FLM1213-6F FCSI0598M200

    Untitled

    Abstract: No abstract text available
    Text: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: hadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50W


    Original     		PDF FLM1011-6F -45dBc 25dBm FLM1011-6F FCSI0598M200

    Untitled

    Abstract: No abstract text available
    Text: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM1011-6F -45dBc 25dBm FLM1011-6F FCSI0598M200

    Untitled

    Abstract: No abstract text available
    Text: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM1011-6F -45dBc 25dBm FLM1011-6F

    FLM1011-6F

    Abstract: No abstract text available
    Text: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM1011-6F -45dBc 25dBm FLM1011-6F V4888

    Untitled

    Abstract: No abstract text available
    Text: FLM7785-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 31% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM7785-6F -46dBc FLM7785-6F Voltage88

    FLM1213-6F

    Abstract: No abstract text available
    Text: FLM1213-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM1213-6F -45dBc 25dBm FLM1213-6F V4888

    FLM1011-6F

    Abstract: No abstract text available
    Text: FLM1011-6F -FEATURES X, Ku-Band Internally Matched FET • High Output Power: P ^ b = 37.5dBm Typ. • High Gain: G ^ b = 7.5dB (Typ.) • High PAE: r iadd = 28% (Typ.) • Low IM3 = -45dBc@Po = 25dBm


    OCR Scan     		PDF FLM1011-6F -45dBc 25dBm FLM1011-6F FCSI0598M200

    Untitled

    Abstract: No abstract text available
    Text: FLM1011-6F Internally M a tch ed Power GaAs l ETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Condition Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage vgs -5 V 31.2 w Total Power Dissipation Tc = 25°C pt Storage Temperature


    OCR Scan     		PDF FLM1011-6F 26dBm 24dBm 22dBm

    Untitled

    Abstract: No abstract text available
    Text: FLM7785-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 38.5dBm Typ. High Gain: G ^ b = 8.5dB (Typ.) High PAE: riadd = 31% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM7785-6F -46dBc FLM7785-6F FCSI0598M200