2350 034 10102
Abstract: 7405 9727
Text: GALI-6F Performance Data NOTE: Use PDF Bookmarks to view DATA at required conditions TYPE: MMIC Amplifier MODEL: GALI-6F Reference Data: RDF-1245E S PARAMETERS are presented in dB/deg Format TEST CONDITIONS: INPUT POWER = -15dBm, Icc = 50mA, Vd = 4.64V @Temperature = +25degC
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RDF-1245E
-15dBm,
25degC
2350 034 10102
7405 9727
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PDF
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MP1410
Abstract: CROUSE-HINDS EJB EJB241810 EJB060404-SA EJB080806-SA EJB161606 EJB241808 EJB242408 EJB362408 EJB-MP1812
Text: 2: 5: SYS19: BASE2 PDFINFO 50: 95: 98: JOB: CRTEST06-3128-0 Name: 6F-128 6F 100: DATE: JAN 19 2006 Time: 6:18:06 PM Operator: RB EJB Junction Boxes COLOR: CMYK TCP: 15001 Typedriver Name: TS name csm no.: 100 Cl. I, Div. 1 & 2, Groups B,C,D Cl. II, Div. 1, Groups E,F,G
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SYS19:
CRTEST06-3128-0
6F-128
oB181206
EJB181208
EJB241208
EJB241210
EJB241808
EJB241810
EJB242408
MP1410
CROUSE-HINDS EJB
EJB060404-SA
EJB080806-SA
EJB161606
EJB362408
EJB-MP1812
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PDF
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fu 024 n
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Amplifier - GALI-6F Amplifier print this page GALI-6F Frequency GAIN, dB Maximum Power, dBm Dynamic Range MHz Output Input NF 1 dB Min. (no dB Comp. damage) Typ. IP3 dBm Typ. DC-4000 10.00 +15.80 +14.30 +20.00 4.50 Lw=low range(fL to fU/2) U=upper range(fU/2 to fU)
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DC-4000
Amp10000
fu 024 n
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PDF
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FLM1011-6F
Abstract: No abstract text available
Text: FLM1011-6F -FEATURES X, Ku-Band Internally Matched FET • High Output Power: P ^ b = 37.5dBm Typ. • High Gain: G ^ b = 7.5dB (Typ.) • High PAE: r iadd = 28% (Typ.) • Low IM3 = -45dBc@Po = 25dBm
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OCR Scan
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FLM1011-6F
-45dBc
25dBm
FLM1011-6F
FCSI0598M200
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PDF
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JESD22-A114D
Abstract: FLM1213-6F
Text: FLM1213-6F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=37.5dBm Typ. ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: hadd=27%(Typ.) ・Low IM3 =-46dBc(Typ.) @Po=26.5dBm ・Broad Band: 12.7～13.2GHz ・Impedance Matched Zin/Zout = 50W
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FLM1213-6F
-46dBc
FLM1213-6F
1906B,
JESD22-A114D
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PDF
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resistor 10k
Abstract: OV7660 Mi0360 OV9630 image sensor omnivision ov7660 driver omnivision HV7131R MI1300 Micron CMOS sensor VGA usb to VGA
Text: SQ930C High-Speed USB 2.0 Video Camera Controller Brief Specification Version 1.3 - April 22nd , 2005 SERVICE & QUALITY TECHNOLOGY CO., LTD. 6F, No.150, Sec.4 Chengde Rd., Shrlin Chiu 111, Taipei, Taiwan, R.O.C. Tel: 886-2-66111177 Fax: 886-2-66106777 http://www.sq.com.tw/
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SQ930C
SQ930C
BE049302
LFBGA64
64-ball
LQFP80
80-pin
resistor 10k
OV7660
Mi0360
OV9630
image sensor omnivision ov7660 driver
omnivision
HV7131R
MI1300
Micron CMOS sensor VGA
usb to VGA
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PDF
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Untitled
Abstract: No abstract text available
Text: FLM7785-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: hadd = 31% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50W
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FLM7785-6F
-46dBc
FLM7785-6F
FCSI0598M200
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PDF
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CM6303
Abstract: CM630 AEC 104 24c02 mcu audio 24C02 LQFP-64 103-1 MAG-IC voip CIRCUIT DIAGRAM with camera 24c02 eeprom circuit diagram echo mixer circuit diagram
Text: USB Audio Solution for Multimedia and Voice Applications CM6303 USB Audio Single Chip with SW AEC Specification Datasheet Version 1.61 C-MEDIA ELECTRONICS INC. TEL: 886-2-8773-1100 FAX: 886-2-8773-2211 6F, 100, Sec. 4, Civil Boulevard, Taipei, Taiwan 106, R.O.C.
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CM6303
CM6303
CM630
AEC 104
24c02 mcu audio
24C02
LQFP-64
103-1 MAG-IC
voip CIRCUIT DIAGRAM with camera
24c02 eeprom circuit diagram
echo mixer circuit diagram
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PDF
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osd font
Abstract: pvde2 HSYNC, VSYNC, DE, input, output video scaler lcd monitor scaler ic pht 094 syntek STK96C100 phsb 6040MHz
Text: 太欣半導體股份有限公司 Syntek Semiconductor Co., Ltd. STK96C100 APPLICATION NOTE For Internal Users Only by SYNTEK =STK96C100= Flat Panel Display Scaler IC Ver. 0.9 DESIGN CENTER 6F, YU FENG BLDG. 317 SUNG-CHANG RD., TAIPEI, TAIWAN, R.O.C.
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STK96C100
STK96C100=
osd font
pvde2
HSYNC, VSYNC, DE, input, output
video scaler lcd monitor
scaler ic
pht 094
syntek
STK96C100
phsb
6040MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: FLM1213-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Ω
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FLM1213-6F
-45dBc
25dBm
FLM1213-6F
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Untitled
Abstract: No abstract text available
Text: FLM1415-6F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 37.0dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 20% (Typ.) Low IM3 = -45dBc@Po = 26.0dBm (Typ.) Broad Band: 14.5 ~ 15.3GHz Impedance Matched Zin/Zout = 50Ω
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FLM1415-6F
-45dBc
FLM1415-6F
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PDF
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Untitled
Abstract: No abstract text available
Text: FLM1011-6F Internally M a tch ed Power GaAs l ETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Condition Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage vgs -5 V 31.2 w Total Power Dissipation Tc = 25°C pt Storage Temperature
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OCR Scan
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FLM1011-6F
26dBm
24dBm
22dBm
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PDF
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FLM1415-6F
Abstract: No abstract text available
Text: FLM1415-6F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 37.0dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 20% (Typ.) Low IM3 = -45dBc@Po = 26.0dBm (Typ.) Broad Band: 14.5 ~ 15.3GHz Impedance Matched Zin/Zout = 50Ω
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FLM1415-6F
-45dBc
FLM1415-6F
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fujitsu GHz gaas fet
Abstract: No abstract text available
Text: FLM1415-6F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 37.0dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 20% (Typ.) Low IM3 = -45dBc@Po = 26.0dBm (Typ.) Broad Band: 14.5 ~ 15.3GHz Impedance Matched Zin/Zout = 50Ω
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FLM1415-6F
-45dBc
FLM1415-6F
FCSI0598M200
fujitsu GHz gaas fet
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Untitled
Abstract: No abstract text available
Text: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω
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FLM1011-6F
-45dBc
25dBm
FLM1011-6F
Vol88
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PDF
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FLM7785-6F
Abstract: No abstract text available
Text: FLM7785-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 31% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω
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FLM7785-6F
-46dBc
FLM7785-6F
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fujitsu gaas fet
Abstract: FLM7785-6F
Text: FLM7785-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 31% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω
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FLM7785-6F
-46dBc
FLM7785-6F
fujitsu gaas fet
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PDF
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Untitled
Abstract: No abstract text available
Text: FLM1213-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: hadd = 27% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50W
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FLM1213-6F
-45dBc
25dBm
FLM1213-6F
FCSI0598M200
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PDF
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Untitled
Abstract: No abstract text available
Text: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: hadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50W
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FLM1011-6F
-45dBc
25dBm
FLM1011-6F
FCSI0598M200
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PDF
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Untitled
Abstract: No abstract text available
Text: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω
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Original
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FLM1011-6F
-45dBc
25dBm
FLM1011-6F
FCSI0598M200
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PDF
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Untitled
Abstract: No abstract text available
Text: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω
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FLM1011-6F
-45dBc
25dBm
FLM1011-6F
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PDF
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FLM1011-6F
Abstract: No abstract text available
Text: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω
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FLM1011-6F
-45dBc
25dBm
FLM1011-6F
V4888
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PDF
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Untitled
Abstract: No abstract text available
Text: FLM7785-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 31% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω
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FLM7785-6F
-46dBc
FLM7785-6F
Voltage88
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PDF
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FLM1213-6F
Abstract: No abstract text available
Text: FLM1213-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Ω
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FLM1213-6F
-45dBc
25dBm
FLM1213-6F
V4888
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PDF
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