Untitled
Abstract: No abstract text available
Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
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F0212
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transistor BC 55
Abstract: TR BC bc 163 FPT-48P-M19 FPT-48P-M20
Text: MBM29DL400TC/BC-55/70/90 Data Sheet Retired Product This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been
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MBM29DL400TC/BC-55/70/90
MBM29DL400TC/BC
DS05-20866-7E
F0403
ProductDS05-20866-7E
transistor BC 55
TR BC
bc 163
FPT-48P-M19
FPT-48P-M20
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M58BW016xB
Abstract: M58BW016BB M58BW016BT M58BW016DB M58BW016DT PQFP80
Text: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PE4FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers
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M58BW016BT,
M58BW016BB
M58BW016DT,
M58BW016DB
512Kb
100ns
56MHz
PQFP80
M58BW016B
LBGA80
M58BW016xB
M58BW016BB
M58BW016BT
M58BW016DB
M58BW016DT
PQFP80
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S29AL004D
Abstract: No abstract text available
Text: Am29DL400B Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new and current designs, S29AL004D supersedes Am29DL400B and is the factory-recommended migration path. Please refer to the S29AL004D datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.
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Am29DL400B
S29AL004D
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ba part 3rd year 2012
Abstract: S29CL-J
Text: S29CD-J and S29CL-J Flash Family S29CD032J, S29CD016J, S29CL032J, S29CL016J 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-Only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O S29CD-J and S29CL-J Flash Family Cover Sheet Data Sheet
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S29CD-J
S29CL-J
S29CD032J,
S29CD016J,
S29CL032J,
S29CL016J
ba part 3rd year 2012
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fujitsu mb90f
Abstract: upc 2851 v bnt 801 v1.1 MB90F DN-13 bnt 801 K 2232 DC-06 c914 MB90F378
Text: Corporate names revised in the documents The Fujitsu Limited reorganized its LSI business into a wholly owned subsidiary, the Fujitsu Microelectronics Limited on March 21, 2008. The corporate names “Fujitsu” and “Fujitsu Limited” described all in this document have been
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CM44-10135-1E
F2MC-16LX
16-BIT
MB90378
F2MC-16L.
F2MC-16LX
fujitsu mb90f
upc 2851 v
bnt 801 v1.1
MB90F
DN-13
bnt 801
K 2232
DC-06
c914
MB90F378
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ST3215
Abstract: No abstract text available
Text: User’s Manual 16 RL78/G13 User’s Manual: Hardware 16-Bit Single-Chip Microcontrollers All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by
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RL78/G13
16-Bit
R01UH0146EJ0310
ST3215
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Untitled
Abstract: No abstract text available
Text: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional)
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M58BW016DB
M58BW016DT
512Kb
56MHz
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S29CL-J
Abstract: No abstract text available
Text: S29CD-J and S29CL-J Flash Family S29CD032J, S29CD016J, S29CL032J, S29CL016J 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-Only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O S29CD-J and S29CL-J Flash Family Cover Sheet Data Sheet
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S29CD-J
S29CL-J
S29CD032J,
S29CD016J,
S29CL032J,
S29CL016J
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Untitled
Abstract: No abstract text available
Text: S29CD-G Flash Family S29CD032G, S29CD016G 32 Megabit 1M x 32-Bit , 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O featuring 170 nm Process Technology PRELIMINARY INFORMATION Data Sheet
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S29CD-G
S29CD032G,
S29CD016G
32-Bit)
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78f1164
Abstract: PD78F1168AGC-UEU-AX 78F1165 78F1167A nec f0114h nec f0123h 78f1166 78F1166A 78F1164A ptc 100
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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G0706
78f1164
PD78F1168AGC-UEU-AX
78F1165
78F1167A
nec f0114h
nec f0123h
78f1166
78F1166A
78F1164A
ptc 100
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M50FLW040A
Abstract: M50FLW040B PLCC32 TSOP32
Text: M50FLW040A M50FLW040B 4 Mbit 5 x 64KByte Blocks + 3 x 16 x 4KByte Sectors 3V Supply Firmware Hub / Low Pin Count Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ FLASH MEMORY – Compatible with either the LPC interface or the FWH interface (Intel Spec rev1.1)
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M50FLW040A
M50FLW040B
64KByte
33MHz
M50FLW040A)
M50FLW040B
M50FLW040A
PLCC32
TSOP32
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AT25DF041A
Abstract: AT26F004 AT26F004-SSU
Text: Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible – Supports SPI Modes 0 and 3 • 33 MHz Maximum Clock Frequency • Flexible, Uniform Erase Architecture • • • • • • • • • • – 4-Kbyte Blocks – 32-Kbyte Blocks
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32-Kbyte
64-Kbyte
16-Kbyte
3588D
AT25DF041A
AT26F004
AT26F004-SSU
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AT26F004-SSU
Abstract: AT26F004 AT26F004-MU AT26F004-SU
Text: Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible – Supports SPI Modes 0 and 3 • 33 MHz Maximum Clock Frequency • Flexible, Uniform Erase Architecture • • • • • • • • • • – 4-Kbyte Blocks – 32-Kbyte Blocks
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32-Kbyte
64-Kbyte
16-Kbyte
AT26F004-SSU
AT26F004
AT26F004-MU
AT26F004-SU
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am29f date code markings
Abstract: am29lv date code markings Am29BDD160GB64C
Text: ADVANCED INFORMATION Am29BDD160G 16 Megabit 1 M x 16-bit/512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURE ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while
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Am29BDD160G
16-bit/512
32-Bit)
am29f date code markings
am29lv date code markings
Am29BDD160GB64C
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M50FLW040A
Abstract: M50FLW040B PLCC32 TSOP32 A19-21
Text: M50FLW040A M50FLW040B 4 Mbit 5 x 64KByte Blocks + 3 x 16 x 4KByte Sectors 3V Supply Firmware Hub / Low Pin Count Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ FLASH MEMORY – Compatible with either the LPC interface or the FWH interface (Intel Spec rev1.1)
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M50FLW040A
M50FLW040B
64KByte
33MHz
M50FLW040A)
M50FLW040B)
M50FLW040A
M50FLW040B
PLCC32
TSOP32
A19-21
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la 7913
Abstract: JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 00005H
Text: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional)
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M58BW016DB
M58BW016DT
512Kb
56MHz
la 7913
JESD97
M58BW016D
M58BW016DB
M58BW016DT
PQFP80
00005H
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM44-10140-3E F2MC-16LX 16-BIT MICROCONTROLLER MB90350E Series HARDWARE MANUAL F2MC-16LX 16-BIT MICROCONTROLLER MB90350E Series HARDWARE MANUAL Be sure to refer to the "Check Sheet" for the latest cautions on development.
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CM44-10140-3E
F2MC-16LX
16-BIT
MB90350E
8/10-bit
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Q002
Abstract: JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 13-May-2003 tbhk M58BW016DB7 8835h
Text: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)
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M58BW016DB
M58BW016DT
512Kb
56MHz
Q002
JESD97
M58BW016D
M58BW016DB
M58BW016DT
PQFP80
13-May-2003
tbhk
M58BW016DB7
8835h
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29DL400BT-70
Abstract: No abstract text available
Text: PRELIMINARY AMDil Am29DL400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations ■ Sector protection — Host system can program or erase in one bank,
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Am29DL400B
8-Bit/256
16-Bit)
29DL400BT-70
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LC124
Abstract: No abstract text available
Text: LH28F004SU-LC FEATURES 4M 512K x 8 Flash Memory 40-PIN TSOP • 512K x 8 Word Configuration TOP VIEW S • 5 V Write/Erase Operation (5 VN/pp, 3.3 V Vc c ) - No Requirement for DC/DC Converter to Write/Erase A-I6 C 1• \ 40 Z I a 17 A-I5 C 2 39 □ A14 IZ
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LH28F004SU-LC
LH28F004SU
-40-pin,
TSOP040-P-1020)
LH28F004SUT-LC15
40-pin
LC124
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Untitled
Abstract: No abstract text available
Text: LH28F004SU-Z9 FEATURES 4M 512 x 8 Flash Memory 42-PIN CSP TOP VIEW • 512K x 8 Word Configuration • 2.7 V Write/Erase Operation (5 V ± 0.5 V Vpp, 3.0 V ± 0.3 V V CC, CC’ +15°C to +35°C) - No Requirement For DC/DC Converter To Write/Erase / 1 2 3
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LH28F004SU-Z9
J63428
SMT96118
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Untitled
Abstract: No abstract text available
Text: LH28F400SU B-ZO FEATURES • User-Configurable x8 or x16 Operation • 5 V Write/Erase Operation 5 V Vpp; 3.3 V Vqq - No Requirement for DC/DC Converter to Write/Erase • 150 ns Maximum Access Time (Vcc = 3.3 V ± 0.3 V) • Min. 2.7 V Read Capability - 160 ns Maximum Access Time
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LH28F400SU
49-PIN
J63428
T96108
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Untitled
Abstract: No abstract text available
Text: SHARP Ver.1.1 9 6 /1 1 /2 2 - Limited usage of LH28F800SUD (In the case of 8bit configuration ) Programmingproblem at command and data We observed some operation error when you write commandand data in following timing. * Same timing of BEX# High and WE# High
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LH28F800SUD
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