transistor 6bw
Abstract: 3BW 02 R047 ERJ6BQ code 6BW ERJ6R ERJ8BW
Text: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ BW : 0402, 0603, 0805, 1206 ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2512 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2BW, 3BW, 6BW, 8BW
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ERJ8BW
Abstract: No abstract text available
Text: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 ERJ BW, CW : 0402, 0603, 0805, 1206 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2B, 3B, 6B, 8B, 14B, 3R,
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RC2144
Abstract: ERJ8BW
Text: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 ERJ BW : 0402, 0603, 0805, 1206 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2B, 3B, 6B, 8B, 14B, 3R,
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14BS/Q,
RC2144
ERJ8BW
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ERJ6RQ
Abstract: ERJ8BW
Text: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 ERJ BW, CW : 0402, 0603, 0805, 1206 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2B, 3B, 6B, 8B, 14B, 3R,
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transistor 6bw
Abstract: 6BW 16 6BW 79 ERJ3BW 6BW 80 code 6BW 6bw 43 transistor 3bw transistor l1w R047
Text: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 ERJ BW : 0402, 0603, 0805, 1206 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2B, 3B, 6B, 8B, 14B, 3R,
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ERJ6RQ
Abstract: ERJ8BW
Text: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 ERJ BW, CW : 0402, 0603, 0805, 1206 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2B, 3B, 6B, 8B, 14B, 3R,
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ERJ8BW
Abstract: No abstract text available
Text: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 ERJ BW, CW : 0402, 0603, 0805, 1206 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2B, 3B, 6B, 8B, 14B, 3R,
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6BW 16
Abstract: 6bw 12 6BW 79 code 6BW 6BW 33 6BW 11 ERJ6RQ ERJ8BW
Text: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 ERJ BW, CW : 0402, 0603, 0805, 1206 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2B, 3B, 6B, 8B, 14B, 3R,
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Val50
6BW 16
6bw 12
6BW 79
code 6BW
6BW 33
6BW 11
ERJ6RQ
ERJ8BW
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3BW 18
Abstract: 6bw 01 ERJ6RQ
Text: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 ERJ BW, CW : 0402, 0603, 0805, 1206 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2B, 3B, 6B, 8B, 14B, 3R,
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ERJ6RQ
Abstract: ERJ8BW
Text: Thick Film Chip Resistors / Low Resistance Type Thick Film Chip Resistors / Low Resistance Type ERJ R, B : 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 ERJ BW, CW : 0402, 0603, 0805, 1206 ERJ L : 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 2B, 3B, 6B, 8B, 14B, 3R,
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KW555
Abstract: w555 K889
Text: !!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!""#$%&$!' *(+! !"#$!%&'()*$#+,"*)*-".)"'(&*/%#! ! ,-'./012034! ! ! ! ! ! ! )/G9)/%7%)DDE4564)J9:;92);2)=)X;:9XK0?I) )<9:=8;<)<G;R);?I0<3K:)3G=3)<K?QK:82)3K)3G9) ) $"+)23=?I=:I)5P5O)QKK3R:;?3)=?I)I9F;H9:2) !20R9:Y)E)=?I)J#A)R9:QK:8=?<9)X;3G)G;1G)
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DDE4564
398R9:
DDE4564)
KH989
3GK03
920F3
G33RLff
AB46CBDDE4564)
KW555
w555
K889
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marking code 6BW
Abstract: 6BW MARKING 6BG TVS marking 6BN marking 6Cn marking 6ah SMA6J14A 6cg marking code SMA6J12 tvs 6ae
Text: SMA6J5.0 thru 40A Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AC SMA Cathode Band 0.065 (1.65) Stand-off Voltage 5.0 to 40V Peak Pulse Power 600W 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) t c u rod P New Mounting Pad Layout 0.066 MIN. (1.68 MIN.)
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DO-214AC
DO-214AC
MIL-STD-750,
marking code 6BW
6BW MARKING
6BG TVS
marking 6BN
marking 6Cn
marking 6ah
SMA6J14A
6cg marking code
SMA6J12
tvs 6ae
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6BG marking DIODE
Abstract: diode 6BG
Text: SMA6J High junction temperature Transil Features • Peak pulse power: – 600 W 10/1000 µs – 4 kW (8/20 µs) ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types ■ Low clamping voltage versus standard series
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DO-214AC)
883G-Method
6BG marking DIODE
diode 6BG
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6BG marking DIODE
Abstract: 6BW 81 6ba diode st 6ug 6BW marking SMA6J33A marking code 6BW SMA6J100CA-TR MARKING CODE 6BA transistor 6bw
Text: SMA6J High junction temperature Transil Features • Peak pulse power: – 600 W 10/1000 µs – 4 kW (8/20 µs) ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types ■ Low clamping voltage versus standard series
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DO-214AC)
6BG marking DIODE
6BW 81
6ba diode
st 6ug
6BW marking
SMA6J33A
marking code 6BW
SMA6J100CA-TR
MARKING CODE 6BA
transistor 6bw
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marking code 6BW
Abstract: ERJA1 ERJB2
Text: 2014 CATALOG Fixed Resistors LQGXVWULDOSDQDVRQLFFRP Fixed Resistors CONTENTS Product Item Type Safety Precautions Common precautions for Fixed Resistors Rectangular Type Surface Mount Resistors Attenuator Power Type 2 Thick Film Chip Resistors
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6bw 95
Abstract: TR 6BW 01 IC 7915
Text: V N E C ELECTRONI CS 6427525 N E C I NC 01 ELECTRONICS D E I bM 27 S 2S 00100=13 81C INC NEC NEC Electronics Inc. D e sc rip tio n The //PC356 is a J -F E T input operational amplifier with matched P-channel ion implanted J -F E T s. In addition to the obvious advantages of J -F E T inputs, the juPC356 Is
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uPC356
//PC356
fjPC356
6bw 95
TR 6BW 01
IC 7915
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opo7c
Abstract: 0P07C
Text: ÆL—f r r u i m i TECHNOLOGY _QP-07 Precision Operational Amplifier F€flTUR€S DCSCRIPTIOn • Guaranteed 25^ V max. Offset Voltage ■ Guaranteed 0.6/zV/°C max. Offset Voltage Drift with Temperature ■ Excellent I.O^V/Month max. Long Term Stability
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QP-07
0P-07
opo7c
0P07C
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LDR03
Abstract: d13 -620 gh 6922 EH 14GW8 19BX6 ecc189 ECF80 equivalent BA 6688 L 6dl4 E88CC Telefunken
Text: TELEFUNKEN Röhren-Vergleichsliste List of comparative types Die in dieser Liste aufgeführten Vergleichstypen sind äquivalent. Eine absolute Identität ist nicht in jedem Fall gegeben, sie sind jedoch so ähnlich zueinander, daß ihre Verwendung für den gleichen Zweck möglich ist. Der Übersichtlichkeit wegen
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E80CF
YL1080
YL1130
CAV50
LDR03
d13 -620 gh
6922 EH
14GW8
19BX6
ecc189
ECF80 equivalent
BA 6688 L
6dl4
E88CC Telefunken
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transistor 6bw
Abstract: 3 PIN 6Bw transistor 6Bw transistor 6bw 12 transistor 6BW MARKING TOP marking 6BW
Text: r j urm TECHNOLOGY LTC125Q Very Low Noise Zero-Drift Bridge Amplifier FCfflURCS D CSCRIPTIOn • Very Low Noise: 0.75nVp.p Typ, 0.1 Hz to 10Hz ■ DC to 1Hz Noise Lower Than OP-07 ■ Full Output Swing into 1k Load ■ Offset Voltage: 10 iV Max ■ Offset Voltage Drift: 50nV/°C Max
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75nVp
OP-07
110dB
115dB
LTC125Q
LTC1250
LTC1250
transistor 6bw
3 PIN 6Bw transistor
6Bw transistor
6bw 12 transistor
6BW MARKING
TOP marking 6BW
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Untitled
Abstract: No abstract text available
Text: MM Registers - For a summary of all registers refer to the Register Summary section at the end of this chapter. All reserved bits must be written to a zero. NOTE: Control Registers 0x00— DS1/DS2 Output Control Register CR00
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IL-STD-883C
JC-40
Bt8340
84-PLCC
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rd5106
Abstract: RD5106A RD6610A RD5107A RD661OA rd5107 RETICON RD510 RD6610ANP011 EGG RETICON
Text: Advance Information ¿n'^E E zG RETICON RD6610A 2048-Sample CCD Analog Delay Line Description 1 Clock The RD661OA is a 2048-sample analog delay line. It accepts an arbitrary analog voltage signal within certain voltage swing and bandwidth limits and outputs the same signal delayed in time.
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RD661OA
2048-sample
RD5106A/RD5107A
RD5108A
RD661
RD6610ANP-011
rd5106
RD5106A
RD6610A
RD5107A
rd5107
RETICON
RD510
RD6610ANP011
EGG RETICON
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phono preamplifier circuit diagram
Abstract: D547 "zero-bias schottky diode" ic 741 riaa PA111BM collimator U 1014N riaa preamplifier circuit diagram ST S734 OPA111AM
Text: H R - B R O W N OPA111 * OPA111 i I R H Q MILITARY & DIE V E R S IO N S A V A IL A B L E Low Noise Precision OPERATIONAL AMPLIFIER APPLICATIONS FEATURES • PRECISION INSTRUMENTATION • LOW NOISE: 100% tasted. B n V /V H z m ix at 10kHz • DATA ACQUISITION
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10kHz
0PEN-L00P
120dB
100dB
OPA111
OPA111
10kHz
30kHz
0PA111
phono preamplifier circuit diagram
D547
"zero-bias schottky diode"
ic 741 riaa
PA111BM
collimator
U 1014N
riaa preamplifier circuit diagram
ST S734
OPA111AM
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dd417
Abstract: No abstract text available
Text: 'd a t a b427525 GÜM17SE ST2 « N E C E NEC sh eet MOS INTEGRATED CIRCUIT f juPD42S4260L, 424260L 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The /¿PD42S4260L, 424260L are 262 144 words by 16 bits dynamic CMOS RAMs with optional fast page mode
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b427525
M17SE
juPD42S4260L
424260L
16-BIT,
PD42S4260L,
424260L
/1PD42S4260L.
PD42S4260L
//PD424260L
dd417
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Solitron J775-2
Abstract: BT196 SS14 TOSHIBA 1n5822 TOSHIBA SS550 BT127 SE140 NSR8140S NBS25-400 1N4007 toshiba
Text: CROSS REFERENCE INDUSTRIAL R u t No. 10D05 iœ i îœ i 10D2 1 302 im 1004 10D4 10D6 10 6 IO » im 11DQ03 11DQ04 11DQ05 11DQ06 15B4B41 15D4B41 15G4B41 15J4B41 1B4B42 im a im o naco in n o 1G4B42 lHi 117 1BB 1J4B42 1*1217 1*12171 1K1217B 1N1218 1K1218A 1*12188
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10D05
RL151G
1N4934
RL152G
1N4935
RL153G
RL154G
1N4936
RL155G
Solitron J775-2
BT196
SS14 TOSHIBA
1n5822 TOSHIBA
SS550
BT127
SE140
NSR8140S
NBS25-400
1N4007 toshiba
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