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    6A MARKING SOT23 Search Results

    6A MARKING SOT23 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation

    6A MARKING SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6A marking sot23

    Abstract: BC817 SOT23 marking 6A marking 6A SOT 23 6A MARKING
    Text: SEMICONDUCTOR BC817 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 6A 1 2 Item Marking Description Device Mark 6 BC817 hFE Grade A 16 A , 25(B) * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note) * Lot No. marking method


    Original     		PDF BC817 OT-23 6A marking sot23 BC817 SOT23 marking 6A marking 6A SOT 23 6A MARKING

    Mosfet

    Abstract: SSF2418E 2418E
    Text: SSF2418E 20V Dual N-Channel MOSFET Main Product Characteristics VDSS 20V RDS on 18mohm(typ.) ID 6A SOT23-6 Features and Benefits   Marking and Pin Schematic Diagram Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF2418E 18mohm OT23-6 2418E Mosfet SSF2418E 2418E

    BC817 cdil

    Abstract: BC817 bc818 smd diode 6D SMD Transistor 6f smd transistor 6g BC817-16 BC817-25 BC817-40 BC818-16
    Text: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B


    Original     		PDF OT-23 BC817 BC818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC817 cdil BC817 bc818 smd diode 6D SMD Transistor 6f smd transistor 6g BC817-16 BC817-25 BC817-40 BC818-16

    BC817

    Abstract: BC817 smd bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 smd bc817
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H


    Original     		PDF OT-23 BC817 BC818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC817 BC817 smd bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 smd bc817

    BC817

    Abstract: BC817 smd BC817 cdil bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E


    Original     		PDF ISO/TS16949 OT-23 BC817 BC818 BC817-16 BC817-25 BC817-40 BC818-16 BC817 BC817 smd BC817 cdil bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transisto rs Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H


    Original     		PDF OT-23 BC817 BC818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25

    Untitled

    Abstract: No abstract text available
    Text: S O T- 2 3 B I P O L A R T R A N S I S T O R S NPN TRANSISTORS • New Product Marking VCEO hFE @VCE/IC VCEsat @IC/IB ICES @VCE Type Code V V/mA max.V mA/mA max.nA V BC817-16 6A 45 100-250 1/100 0.7 500/50 100 45 BC817-25 6B 45 160-400 1/100 0.7 500/50 100


    Original     		PDF BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 BC846A BC846B BC847A BC847B

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT718 20V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • • • • BVCEO > -20V IC = -1.5A Continuous Collector Current ICM = -6A Peak Pulse Current


    Original     		PDF FMMT718 -200mV 625mW FMMT618 AEC-Q101 OT-23 DS31924

    relay 12v 100A

    Abstract: transistor pnp 12V 1A Collector Current vebo 15v sot23 ZXTN23015CFH ZXTP23015CFH ZXTP23015CFHTA
    Text: ZXTP23015CFH 15V, SOT23, PNP medium power transistor Summary V BR CES > -15V, V(BR)CEO > -15V V(BR)ECO > -6V IC(CONT) = -6A RCE(SAT) = 20m⍀ typical VCE(SAT) < -36mV @ -1A PD = 1.25W Complementary part number ZXTN23015CFH Description Advanced process capability and package design have been used to


    Original     		PDF ZXTP23015CFH -36mV ZXTN23015CFH relay 12v 100A transistor pnp 12V 1A Collector Current vebo 15v sot23 ZXTN23015CFH ZXTP23015CFH ZXTP23015CFHTA

    SOT23 marking 6A

    Abstract: No abstract text available
    Text: ZXTN23015CFH 15V, SOT23, NPN medium power transistor Summary V BR CEX > 60V, V(BR)CEO > 15V IC(CONT) = 6A RCE(SAT) = 19m⍀ typical VCE(SAT) < 30mV @ 1A PD = 1.25W Complementary part number : ZXTP23015CFH Description Advanced process capability and package design have been used to


    Original     		PDF ZXTN23015CFH ZXTP23015CFH 522-ZXTN23015CFHTA ZXTN23015CFHTA SOT23 marking 6A

    181 622 b

    Abstract: "marking 327" mosfet motor dc 48v ZXTN23015CFH ZXTN23015CFHTA ZXTP23015CFH
    Text: ZXTN23015CFH 15V, SOT23, NPN medium power transistor Summary V BR CEX > 60V, V(BR)CEO > 15V IC(CONT) = 6A RCE(SAT) = 19m⍀ typical VCE(SAT) < 30mV @ 1A PD = 1.25W Complementary part number : ZXTP23015CFH Description Advanced process capability and package design have been used to


    Original     		PDF ZXTN23015CFH ZXTP23015CFH 181 622 b "marking 327" mosfet motor dc 48v ZXTN23015CFH ZXTN23015CFHTA ZXTP23015CFH

    FMMT718

    Abstract: sot-23 15V vebo pnp
    Text: A Product Line of Diodes Incorporated FMMT718 20V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • • • • BVCEO > -20V IC = -1.5A Continuous Collector Current ICM = -6A Peak Pulse Current


    Original     		PDF FMMT718 -200mV 625mW FMMT618 AEC-Q101 OT-23 J-STD-020D DS31924 FMMT718 sot-23 15V vebo pnp

    ZXTN25012EFH

    Abstract: No abstract text available
    Text: ZXTN25012EFH 12V, SOT23, NPN medium power transistor Summary BVCEO > 12V BVECX > 6V hFE > 500 IC cont = 6A VCE(sat) < 32mV @ 1A RCE(sat) = 23m⍀ PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline


    Original     		PDF ZXTN25012EFH

    ZXTN25012EFH

    Abstract: No abstract text available
    Text: ZXTN25012EFH 12V, SOT23, NPN medium power transistor Summary BVCEO > 12V BVECO > 4.5V hFE > 500 IC cont = 6A VCE(sat) < 32mV @ 1A RCE(sat) = 23m⍀ PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline


    Original     		PDF ZXTN25012EFH ZXTN25012EFH

    sot23 718

    Abstract: fmmt718 718 SOT23 sot23-6 marking 718
    Text: A Product Line of Diodes Incorporated FMMT718 20V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • • • BVCEO > -20V IC = -1.5A Continuous Collector Current ICM = -6A Peak Pulse Current


    Original     		PDF FMMT718 -200mV 625mW FMMT618 AEC-Q101 DS31924 sot23 718 fmmt718 718 SOT23 sot23-6 marking 718

    TS16949

    Abstract: ZXTN23015CFH ZXTP23015CFH ZXTP23015CFHTA
    Text: ZXTP23015CFH 15V, SOT23, PNP medium power transistor Summary V BR CES > -15V, V(BR)CEO > -15V V(BR)ECO > -6V IC(CONT) = -6A RCE(SAT) = 20m⍀ typical VCE(SAT) < -36mV @ -1A PD = 1.25W Complementary part number ZXTN23015CFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP23015CFH -36mV ZXTN23015CFH D-81541 TS16949 ZXTN23015CFH ZXTP23015CFH ZXTP23015CFHTA

    Untitled

    Abstract: No abstract text available
    Text: ZXTP23015CFH 15V, SOT23, PNP medium power transistor Summary V BR CES > -15V, V(BR)CEO > -15V V(BR)ECO > -6V IC(CONT) = -6A RCE(SAT) = 20m⍀ typical VCE(SAT) < -36mV @ -1A PD = 1.25W Complementary part number ZXTN23015CFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP23015CFH -36mV ZXTN23015CFH D-81541

    FMMT619TA

    Abstract: FMMT619TC FMMT619 FMMT720
    Text: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • BVCEO > 50V IC = 2A Continuous Collector Current Low Saturation Voltage VCE sat < 200mV @ 1A


    Original     		PDF FMMT619 200mV 625mW FMMT720 AEC-Q101 DS33236 FMMT619TA FMMT619TC FMMT619 FMMT720

    SOT23 marking 619

    Abstract: marking 619 npn sot23
    Text: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • • • • BVCEO > 50V IC = 2A Continuous Collector Current Low Saturation Voltage VCE sat < 200mV @ 1A


    Original     		PDF FMMT619 200mV 625mW FMMT720 AEC-Q101 DS33236 SOT23 marking 619 marking 619 npn sot23

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • BVCEO > 50V IC = 2A Continuous Collector Current Low Saturation Voltage VCE sat < 200mV @ 1A


    Original     		PDF FMMT619 200mV 625mW FMMT720 AEC-Q101 DS33236

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTP749F 25V PNP LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • • BVCEO > -25V BVCEO > -35V forward blocking voltage IC = -3A Continuous Collector Current


    Original     		PDF ZXTP749F -150mV 725mW ZXTN649F AEC-Q101 DS31901

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTN649F 25V NPN LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • • BVCEO > 25V BVCBO > 35V forward blocking voltage IC = 3A high Continuous Collector Current


    Original     		PDF ZXTN649F 120mV 725mW ZXTP749F AEC-Q101 DS31900

    MARKING CODE 618 SOT23

    Abstract: FMMT618 AEC-Q101 application note LED reliability marking 618
    Text: A Product Line of Diodes Incorporated FMMT618 20V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > 20V IC = 2.5A Continuous Collector Current RCE SAT = 50mΩ for a low equivalent On-Resistance


    Original     		PDF FMMT618 625mW FMMT718 AEC-Q101 J-STD-020 DS33111 MARKING CODE 618 SOT23 FMMT618 AEC-Q101 application note LED reliability marking 618

    FMMT619

    Abstract: fmmt720
    Text: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • • BVCEO > 50V IC = 2A Continuous Collector Current 625mW power dissipation


    Original     		PDF FMMT619 625mW 200mV FMMT720 AEC-Q101 DS33236 FMMT619