Untitled
Abstract: No abstract text available
Text: MP8606 6A, 6.5V, Fast-Transient, Synchronous Step-Down Converter DESCRIPTION FEATURES The MP8606 is a fully-integrated, highfrequency, synchronous, rectified step-down switch-mode converter. It offers a very compact solution to achieve 6A of continuous output
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MP8606
MP8606
MO-220.
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YG123S15
Abstract: No abstract text available
Text: YG123S15 6A (1500V / 6A ) Outline drawings, mm Fast recovery diode TO-220F _ 0.5 10 + _ 0.2 2.7 + 6.3 _ 0.2 2.7 + Type name Polarity mark 4.5 +_ 0.2 O 3.2 +0.2 - 0.1 _ 0.2 3.7 + [][] 1.0MAX. YG123 [ ] [ ] Lot. No. _ 0.2 1.2 + Pre-Solder Features Damper diode for high definition TV and high resolution display
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YG123S15
O-220F
YG123
YG123S15
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Untitled
Abstract: No abstract text available
Text: MP3426 6A, 35V Boost Converter with Programmable Switching Frequency and UVLO DESCRIPTION FEATURES The MP3426 is a current-mode step-up converter with a 6A, 90mΩ internal switch that provides a highly efficient regulator with a fast response. The MP3426 features
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MP3426
MP3426
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YG123S15
Abstract: No abstract text available
Text: YG123S15 6A (1500V / 6A ) Outline drawings, mm Fast recovery diode TO-220F _ 0.5 10 + _ 0.2 2.7 + 6.3 _ 0.2 2.7 + Type name Polarity mark 4.5 +_ 0.2 O 3.2 +0.2 - 0.1 _ 0.2 3.7 + [][] 1.0MAX. YG123 [ ] [ ] Lot. No. _ 0.2 1.2 + Pre-Solder Features Damper diode for high definition TV and high resolution display
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YG123S15
O-220F
YG123
YG123S15
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YG123S15
Abstract: YG123
Text: YG123S15 6A (1500V / 6A ) Outline drawings, mm Fast recovery diode TO-220F _ 0.5 10 + _ 0.2 2.7 + 6.3 _ 0.2 2.7 + Type name Polarity mark 4.5 +_ 0.2 O 3.2 +0.2 - 0.1 YG123 [ ] [ ] 1.0MAX. Lot. No. _ 0.2 3.7 + [][] _ 0.2 1.2 + Pre-Solder Features Damper diode for high definition TV and high resolution display
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YG123S15
O-220F
YG123
YG123S15
YG123
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solitron rectifier
Abstract: NS6002 NS6000 NS12006 NS6001 NS30001
Text: rectifiers 21 FAST SWITCHING Medium Power Fast Recovery Double-Diffused Silicon Rectifier Diodes (6A Series) CASE STYLE J Jedec Type Solitron Part Numbers PIV Jedec Type 1N3879 NS6000 50 1N3909 NS30000 50 1N3880 NS6001 100 1N3910 NS30001 100 1N3881 NS6002
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1N3879
1N3880
1N3881
1N3882
1N3883
NS6000
NS6001
NS6002
NS6003
NS6004
solitron rectifier
NS12006
NS30001
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Untitled
Abstract: No abstract text available
Text: RCD060N25 Datasheet Nch 250V 6A Power MOSFET lOutline VDSS 250V RDS on (Max.) 530mW ID 6A PD 20W CPT3 (SC-63) <SOT-428> (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.
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RCD060N25
530mW
SC-63)
OT-428>
R1102A
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Untitled
Abstract: No abstract text available
Text: R6006ANX Datasheet Nch 600V 6A Power MOSFET lOutline VDSS 600V RDS on (Max.) 1.2W ID 6A PD 40W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R6006ANX
O-220FM
R1120A
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SIDC03D60F
Abstract: No abstract text available
Text: Preliminary SIDC03D60F Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC03D60F 600V ICn 6A A This chip is used for:
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SIDC03D60F
Q67050-A4037A001
4324E,
SIDC03D60F
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ic MARKING QG
Abstract: GD6NC60HD STGD6NC60HD STGD6NC60HDT4 STMicroelectronics DPAK Marking CODE
Text: STGD6NC60HD N-CHANNEL 6A - 600V DPAK Very Fast PowerMESH IGBT TARGET SPECIFICATION Table 1: General Features TYPE VCES STGD6NC60HDT4 600 V • ■ ■ ■ ■ ■ ■ Figure 1: Package VCE sat IC (Max) @25°C @100°C < 2.5 V 6A LOWER ON-VOLTAGE DROP (Vcesat)
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STGD6NC60HD
STGD6NC60HDT4
ic MARKING QG
GD6NC60HD
STGD6NC60HD
STGD6NC60HDT4
STMicroelectronics DPAK Marking CODE
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Untitled
Abstract: No abstract text available
Text: R6006ANX Nch 600V 6A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 1.2W ID 6A PD 40W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R6006ANX
O-220FM
R1120A
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Untitled
Abstract: No abstract text available
Text: R6006ANX Nch 600V 6A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 1.2W ID 6A PD 40W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R6006ANX
O-220FM
R1120A
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R6006ANX
Abstract: No abstract text available
Text: R6006ANX R6006ANX Datasheet Nch 600V 6A Power MOSFET lOutline VDSS 600V RDS on (Max.) 1.2W ID 6A PD 40W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R6006ANX
O-220FM
R1120A
R6006ANX
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STMicroelectronics Date Code DPAK
Abstract: No abstract text available
Text: STGD6NC60H N-CHANNEL 6A - 600V DPAK Very Fast PowerMESH IGBT TARGET SPECIFICATION Figure 1: Package Table 1: General Features TYPE STGD6NC60HT4 • ■ ■ ■ ■ VCES 600 V VCE sat IC (Max) @25°C @100°C < 2.5 V 6A LOWER ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT
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STGD6NC60H
STGD6NC60HT4
STMicroelectronics Date Code DPAK
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STU6NA100
Abstract: No abstract text available
Text: STU6NA100 N - CHANNEL 1000V - 1.45Ω - 6A - Max220 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU6NA100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V < 1.7 Ω 6A TYPICAL RDS(on) = 1.45 Ω ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED
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STU6NA100
Max220
100oC
STU6NA100
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U6NA100
Abstract: STU6NA100
Text: STU6NA100 N - CHANNEL 1000V - 1.45Ω - 6A - Max220 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST U6NA100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V < 1.7 Ω 6A TYPICAL RDS(on) = 1.45 Ω ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED
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STU6NA100
Max220
U6NA100
100oC
U6NA100
STU6NA100
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Untitled
Abstract: No abstract text available
Text: R6006AND Nch 600V 6A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 1.2W ID 6A PD 40W CPT3 (SC-63) (SOT-428) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R6006AND
SC-63)
OT-428)
R6006A
R1102A
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Untitled
Abstract: No abstract text available
Text: PDU620CT 6A DUAL ULTRA-FAST RECOVERY RECTIFIER PowerDI ä5 Features Mechanical Data • · · · · · · · · Glass Passivated Die Construction Ultra-Fast Recovery Time for High Efficiency High Maximum Junction Temperature High Forward Surge Current Capability
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PDU620CT
AEC-Q101
J-STD-020C
DS30622
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IDP06E060
Abstract: IDD06E060 IDB06E060
Text: IDD06E060 Target IDB06E060 IDP06E060 Fast Switching EmCon Diode A • 600V EmCon technology • fast recovery • soft switching • low reverse recovery charge • low forward voltage ® C C C C A TO 252 Type VRRM IF VF Tj IDD06E060 600V 6A 1.8 V 150°C
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IDD06E060
IDB06E060
IDP06E060
Jan-01
IDP06E060
IDD06E060
IDB06E060
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BYW71
Abstract: No abstract text available
Text: BYT71-800 FAST RECOVERY RECTIFIER DIODES Table 1: Main Product Characteristics IF AV 6A VRRM 800 V Tj 150°C VF (max) 1.4 V trr (max) A K 300 ns TO-220AC FEATURES AND BENEFITS • ■ Table 2: Order Code High voltage capability Fast and soft recovery Part Number
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BYT71-800
O-220AC
BYT71-800
BYT71800
O-220AC.
BYW71
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FE6H
Abstract: smd diode 6F FE6G
Text: FE 6A .FE 6H Super Fast Silicon Rectifler Superschnelle Silizium Gleichrichter Nominal current Nennstrom 6A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50. 400 V Plastic case Kunststoffgehäuse 0 8 x 7.5 [mm] Weight approx. Gewicht ca.
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UL94V-0
R0D1RS14
000017S
FE6H
smd diode 6F
FE6G
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6VF60CT
Abstract: 6VF60CTF TLS153
Text: FAST RECOVERY DIODE 6VF60CT 6VF60CTF 6 .6A/eoov/trr :35nsec 2.38M AX .094 6-7(.264) FEATURES 2.38M AX (.094) n O TO-251AA Case 7 ° TO-252AA Case, Surface M ount Device 6.220245) 5.98(,235) PU— J ° U ltra-Fast Recovery ° Dual Diodes - C athode Com m on
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A/600V/trr
35nsec
6VF60CT
6VF60CTF
O-251AA
O-252AA
38MAX
58MAXJÃ
6VF60CTF
TLS153
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Untitled
Abstract: No abstract text available
Text: STU 6N A100 N - CHANNEL 1000V - 1 .45Q - 6A - Max220 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE S T U 6 N A 1 00 V dss 1000 V RDS on < 1.7 Q. Id 6A • TYPICAL R D S (on) = 1 .45 £2 . ± 30V GATE TO SOURCE VOLTAGE RANTING . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C
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Max220
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IC-25
Abstract: No abstract text available
Text: Æ utran PRODUCT DEVICES.INC. CATALO' ULTRA FAST RECOVERY RECTIFIERS 500V, 6A, 35ns MAXIMUM RATINGS PER DIODE PARAMETER SYMBOL UNITS WORKING PEAK VRRM REVERSE VOLTAGE AVERAGE FORWARD CURRENT IF AV PEAK ONE CYCLE NON-REPETITIVE. SURGE CURRRENT IFSM PEAK REPETITIVE
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IC-25
VRWM-400V
30CVS,
SDRB500
SDR6500
MIL-S-19500
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