STP7NC70ZFP
Abstract: 7NC70Z STB7NC70Z STB7NC70Z-1 STP7NC70Z
Text: STP7NC70Z - STP7NC70ZFP STB7NC70Z - STB7NC70Z-1 N-CHANNEL 700V - 1.1Ω - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH III MOSFET TYPE • ■ ■ ■ ■ VDSS RDS on ID STP7NC70Z/FP 700V < 1.38Ω 6A STB7NC70Z/-1 700V < 1.38Ω 6A TYPICAL RDS(on) = 1.1Ω
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STP7NC70Z
STP7NC70ZFP
STB7NC70Z
STB7NC70Z-1
O-220/FP/D2PAK/I2PAK
STB7NC70Z/-1
STP7NC70Z/FP
O-220
O-220FP
O-220)
STP7NC70ZFP
7NC70Z
STB7NC70Z-1
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ea211
Abstract: No abstract text available
Text: STP7NC70Z - STP7NC70ZFP STB7NC70Z - STB7NC70Z-1 N-CHANNEL 700V - 1.1Ω - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS on ID STP7NC70Z/FP 700V < 1.38Ω 6A STB7NC70Z/-1 700V < 1.38Ω 6A • ■ ■ ■ ■ TYPICAL RDS(on) = 1.1Ω
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STP7NC70Z
STP7NC70ZFP
STB7NC70Z
STB7NC70Z-1
O-220/FP/D2PAK/I2PAK
STP7NC70Z/FP
STB7NC70Z/-1
O-220
O-220FP
ea211
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PDF
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7NC70Z
Abstract: MOSFET 7A 700V TO 220 STP7NC70ZFP MOSFET 50V 100A TO-220
Text: STP7NC70Z - STP7NC70ZFP STB7NC70Z - STB7NC70Z-1 N-CHANNEL 700V - 1.1Ω - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS on ID STP7NC70Z/FP 700V < 1.38Ω 6A STB7NC70Z/-1 700V < 1.38Ω 6A • ■ ■ ■ ■ TYPICAL RDS(on) = 1.1Ω
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STP7NC70Z
STP7NC70ZFP
STB7NC70Z
STB7NC70Z-1
O-220/FP/D2PAK/I2PAK
STP7NC70Z/FP
STB7NC70Z/-1
O-220
O-220FP
7NC70Z
MOSFET 7A 700V TO 220
MOSFET 50V 100A TO-220
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7NC70Z
Abstract: 7NC70 STB7NC70Z STB7NC70Z-1 STP7NC70Z STP7NC70ZFP EP 0520
Text: STP7NC70Z - STP7NC70ZFP STB7NC70Z - STB7NC70Z-1 N-CHANNEL 700V - 1.1Ω - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH III MOSFET TYPE • ■ ■ ■ ■ VDSS RDS on ID STP7NC70Z/FP 700V < 1.38Ω 6A STB7NC70Z/-1 700V < 1.38Ω 6A 3 1 TYPICAL RDS(on) = 1.1Ω
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STP7NC70Z
STP7NC70ZFP
STB7NC70Z
STB7NC70Z-1
O-220/FP/D2PAK/I2PAK
STB7NC70Z/-1
STP7NC70Z/FP
O-220
7NC70Z
7NC70
STB7NC70Z-1
STP7NC70ZFP
EP 0520
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PDF
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7NC70Z
Abstract: MOSFET 700V TO 220 L9 Zener STB7NC70Z-1 STP7NC70Z STP7NC70ZFP
Text: STP7NC70Z - STP7NC70ZFP STB7NC70Z-1 N-CHANNEL 700V - 1.1Ω - 6A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH III MOSFET TYPE • ■ ■ ■ ■ VDSS RDS on ID STP7NC70Z/FP 700V < 1.38Ω 6A STB7NC70Z-1 700V < 1.38Ω 6A TYPICAL RDS(on) = 1.1Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE
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STP7NC70Z
STP7NC70ZFP
STB7NC70Z-1
O-220/TO-220FP/I2PAK
STP7NC70Z/FP
O-220
O-220FP
O-220)
7NC70Z
MOSFET 700V TO 220
L9 Zener
STB7NC70Z-1
STP7NC70ZFP
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2SK2333
Abstract: 2SK2333 equivalent F6F70HVX2 6A 700V mosfet
Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2333 F6F70HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 700V 6A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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2SK2333
F6F70HVX2
FTO-220
190mJ
2SK2333
2SK2333 equivalent
F6F70HVX2
6A 700V mosfet
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2SK2333
Abstract: F6F70HVX2 DIODE 240v 3a 6A 700V mosfet
Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2333 F6F70HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 700V 6A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.
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2SK2333
F6F70HVX2
FTO-220
2SK2333
F6F70HVX2
DIODE 240v 3a
6A 700V mosfet
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AP2761I-H-HF
Abstract: No abstract text available
Text: AP2761I-H-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic BVDSS 700V RDS ON 1.3Ω ID ▼ Simple Drive Requirement 6A G ▼ RoHS Compliant S Description
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AP2761I-H-HF
AP2761
265VAC
O-220CFM
100us
100ms
AP2761I-H-HF
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AP2761
Abstract: No abstract text available
Text: AP2761I-H RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic BVDSS 700V RDS ON 1.3Ω ID ▼ Simple Drive Requirement 6A G ▼ RoHS Compliant S Description
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AP2761I-H
AP2761
265VAC
O-220CFM
100us
100ms
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PDF
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2SK2333
Abstract: F6F70HVX2
Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2333 F6F70HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 700V 6A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.
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2SK2333
F6F70HVX2
FTO-220
190mJ
2SK2333
F6F70HVX2
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PDF
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Untitled
Abstract: No abstract text available
Text: AP2761I-H RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic BVDSS 700V RDS ON 1.3 ID Simple Drive Requirement 6A G RoHS Compliant S Description AP2761 series are specially designed as main switching devices for
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AP2761I-H
AP2761
265VAC
O-220CFM
100us
100ms
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PDF
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Untitled
Abstract: No abstract text available
Text: SSD06N70SL 6A , 700V , RDS ON 1.7Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252 DESCRIPTION The SSD06N70SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide
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SSD06N70SL
O-252
SSD06N70SL
28-Nov
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Untitled
Abstract: No abstract text available
Text: AP2761I-H-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic BVDSS 700V RDS ON 1.3 ID Simple Drive Requirement 6A G RoHS Compliant S Description AP2761 series are specially designed as main switching devices for
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AP2761I-H-HF
AP2761
265VAC
O-220CFM
100us
100ms
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PDF
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Untitled
Abstract: No abstract text available
Text: ICE6N70FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 6A Max V BR DSS rDS(ON) ID = 250uA 700V Min VGS = 10V 0.65Ω Typ Qg VDS = 480V 26nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability
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ICE6N70FP
250uA
O-220
100us
0E-06
0E-05
0E-04
0E-03
0E-02
0E-01
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KF6N70F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C O F A FEATURES K ・VDSS=700V, ID=6A ・Drain-Source ON Resistance : L M R J RDS ON (Max)=1.65Ω @VGS=10V ・Qg(typ.)= 19nC D N N H SYMBOL RATING UNIT Drain-Source Voltage
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KF6N70F
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Untitled
Abstract: No abstract text available
Text: NTE2976 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Low Input Capacitance D Low Static RDS on D Fast Switching Time D Guaranteed Avalanche Resistance Applications: D Switching Power Supply of AC 240V Input D High Voltage Power Supply
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NTE2976
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NTE2976
Abstract: DIODE 240v 3a mosfet for dc to ac inverter
Text: NTE2976 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Low Input Capacitance D Low Static RDS on D Fast Switching Time D Guaranteed Avalanche Resistance Applications: D Switching Power Supply of AC 240V Input D High Voltage Power Supply
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NTE2976
NTE2976
DIODE 240v 3a
mosfet for dc to ac inverter
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PDF
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Untitled
Abstract: No abstract text available
Text: SSW/I6N70A Advanced Power MOSFET FEATURES BVdss = 700 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 pA M ax. @ Vos = 700V
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OCR Scan
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SSW/I6N70A
SSW/I6N70À
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PDF
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SSP6N70
Abstract: ssp6n70a
Text: SSP6N70A Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 mA Max. @ VOS= 700V ^DS(on) = 1 .8 & < CO II _o • ■
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OCR Scan
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SSP6N70A
O-220
SSP6N70
ssp6n70a
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PDF
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6A 700V mosfet
Abstract: 1552Q diode SM 6A
Text: SSW/I6N70A A d v a n c e d Power MOSFET FEATURES BVDSs ~ 700 V ^DS on = • Lower Input Capacitance _D ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 700V 1.8 Q < Rugged Gate Oxide Technology II
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OCR Scan
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SSW/I6N70A
100nc)
Q040724
00M075S
6A 700V mosfet
1552Q
diode SM 6A
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PDF
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SSH6N70A
Abstract: No abstract text available
Text: Advanced SSH6N70A Power MOSFET FEATURES B^D SS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 700V H Low Rds(0n) ■ "I -552 £1 (Typ.)
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OCR Scan
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SSH6N70A
SSH6N70A
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced SSH6N70A Power MOSFET FEATURES BVDSS • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 700V B Low Rds(0n) ■ "I -552 £1 (Typ.) CD Rugged Gate Oxide Technology
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OCR Scan
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SSH6N70A
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PDF
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Untitled
Abstract: No abstract text available
Text: SSH6N70A Advanced Power MOSFET FEATURES BV0SS = 700 V ^DS on = 1.8 £2 < CD Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 nA (M ax) @ Low Rdsjon) •*1-552 £2 (Typ.)
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OCR Scan
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SSH6N70A
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PDF
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SSF6N70A
Abstract: No abstract text available
Text: SSF6N70A Advanced Power MOSFET FEATURES BV0SS = 700 V ^DS on = 1.8 Q < Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 nA (Max.) @ VDS= 700V Low RDS(on) : 1-552 ft (Typ.)
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OCR Scan
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SSF6N70A
003b333
003b33M
D03b335
SSF6N70A
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PDF
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