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    6A 700V MOSFET Search Results

    6A 700V MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    6A 700V MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STP7NC70ZFP

    Abstract: 7NC70Z STB7NC70Z STB7NC70Z-1 STP7NC70Z
    Text: STP7NC70Z - STP7NC70ZFP STB7NC70Z - STB7NC70Z-1 N-CHANNEL 700V - 1.1Ω - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH III MOSFET TYPE • ■ ■ ■ ■ VDSS RDS on ID STP7NC70Z/FP 700V < 1.38Ω 6A STB7NC70Z/-1 700V < 1.38Ω 6A TYPICAL RDS(on) = 1.1Ω


    Original     		PDF STP7NC70Z STP7NC70ZFP STB7NC70Z STB7NC70Z-1 O-220/FP/D2PAK/I2PAK STB7NC70Z/-1 STP7NC70Z/FP O-220 O-220FP O-220) STP7NC70ZFP 7NC70Z STB7NC70Z-1

    ea211

    Abstract: No abstract text available
    Text: STP7NC70Z - STP7NC70ZFP STB7NC70Z - STB7NC70Z-1 N-CHANNEL 700V - 1.1Ω - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS on ID STP7NC70Z/FP 700V < 1.38Ω 6A STB7NC70Z/-1 700V < 1.38Ω 6A • ■ ■ ■ ■ TYPICAL RDS(on) = 1.1Ω


    Original     		PDF STP7NC70Z STP7NC70ZFP STB7NC70Z STB7NC70Z-1 O-220/FP/D2PAK/I2PAK STP7NC70Z/FP STB7NC70Z/-1 O-220 O-220FP ea211

    7NC70Z

    Abstract: MOSFET 7A 700V TO 220 STP7NC70ZFP MOSFET 50V 100A TO-220
    Text: STP7NC70Z - STP7NC70ZFP STB7NC70Z - STB7NC70Z-1 N-CHANNEL 700V - 1.1Ω - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS on ID STP7NC70Z/FP 700V < 1.38Ω 6A STB7NC70Z/-1 700V < 1.38Ω 6A • ■ ■ ■ ■ TYPICAL RDS(on) = 1.1Ω


    Original     		PDF STP7NC70Z STP7NC70ZFP STB7NC70Z STB7NC70Z-1 O-220/FP/D2PAK/I2PAK STP7NC70Z/FP STB7NC70Z/-1 O-220 O-220FP 7NC70Z MOSFET 7A 700V TO 220 MOSFET 50V 100A TO-220

    7NC70Z

    Abstract: 7NC70 STB7NC70Z STB7NC70Z-1 STP7NC70Z STP7NC70ZFP EP 0520
    Text: STP7NC70Z - STP7NC70ZFP STB7NC70Z - STB7NC70Z-1 N-CHANNEL 700V - 1.1Ω - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH III MOSFET TYPE • ■ ■ ■ ■ VDSS RDS on ID STP7NC70Z/FP 700V < 1.38Ω 6A STB7NC70Z/-1 700V < 1.38Ω 6A 3 1 TYPICAL RDS(on) = 1.1Ω


    Original     		PDF STP7NC70Z STP7NC70ZFP STB7NC70Z STB7NC70Z-1 O-220/FP/D2PAK/I2PAK STB7NC70Z/-1 STP7NC70Z/FP O-220 7NC70Z 7NC70 STB7NC70Z-1 STP7NC70ZFP EP 0520

    7NC70Z

    Abstract: MOSFET 700V TO 220 L9 Zener STB7NC70Z-1 STP7NC70Z STP7NC70ZFP
    Text: STP7NC70Z - STP7NC70ZFP STB7NC70Z-1 N-CHANNEL 700V - 1.1Ω - 6A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH III MOSFET TYPE • ■ ■ ■ ■ VDSS RDS on ID STP7NC70Z/FP 700V < 1.38Ω 6A STB7NC70Z-1 700V < 1.38Ω 6A TYPICAL RDS(on) = 1.1Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE


    Original     		PDF STP7NC70Z STP7NC70ZFP STB7NC70Z-1 O-220/TO-220FP/I2PAK STP7NC70Z/FP O-220 O-220FP O-220) 7NC70Z MOSFET 700V TO 220 L9 Zener STB7NC70Z-1 STP7NC70ZFP

    2SK2333

    Abstract: 2SK2333 equivalent F6F70HVX2 6A 700V mosfet
    Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2333 F6F70HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 700V 6A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


    Original     		PDF 2SK2333 F6F70HVX2 FTO-220 190mJ 2SK2333 2SK2333 equivalent F6F70HVX2 6A 700V mosfet

    2SK2333

    Abstract: F6F70HVX2 DIODE 240v 3a 6A 700V mosfet
    Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2333 F6F70HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 700V 6A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.


    Original     		PDF 2SK2333 F6F70HVX2 FTO-220 2SK2333 F6F70HVX2 DIODE 240v 3a 6A 700V mosfet

    AP2761I-H-HF

    Abstract: No abstract text available
    Text: AP2761I-H-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic BVDSS 700V RDS ON 1.3Ω ID ▼ Simple Drive Requirement 6A G ▼ RoHS Compliant S Description


    Original     		PDF AP2761I-H-HF AP2761 265VAC O-220CFM 100us 100ms AP2761I-H-HF

    AP2761

    Abstract: No abstract text available
    Text: AP2761I-H RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic BVDSS 700V RDS ON 1.3Ω ID ▼ Simple Drive Requirement 6A G ▼ RoHS Compliant S Description


    Original     		PDF AP2761I-H AP2761 265VAC O-220CFM 100us 100ms

    2SK2333

    Abstract: F6F70HVX2
    Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2333 F6F70HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 700V 6A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.


    Original     		PDF 2SK2333 F6F70HVX2 FTO-220 190mJ 2SK2333 F6F70HVX2

    Untitled

    Abstract: No abstract text available
    Text: AP2761I-H RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic BVDSS 700V RDS ON 1.3 ID Simple Drive Requirement 6A G RoHS Compliant S Description AP2761 series are specially designed as main switching devices for


    Original     		PDF AP2761I-H AP2761 265VAC O-220CFM 100us 100ms

    Untitled

    Abstract: No abstract text available
    Text: SSD06N70SL 6A , 700V , RDS ON 1.7Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252 DESCRIPTION The SSD06N70SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide


    Original     		PDF SSD06N70SL O-252 SSD06N70SL 28-Nov

    Untitled

    Abstract: No abstract text available
    Text: AP2761I-H-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic BVDSS 700V RDS ON 1.3 ID Simple Drive Requirement 6A G RoHS Compliant S Description AP2761 series are specially designed as main switching devices for


    Original     		PDF AP2761I-H-HF AP2761 265VAC O-220CFM 100us 100ms

    Untitled

    Abstract: No abstract text available
    Text: ICE6N70FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 6A Max V BR DSS rDS(ON) ID = 250uA 700V Min VGS = 10V 0.65Ω Typ Qg VDS = 480V 26nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		PDF ICE6N70FP 250uA O-220 100us 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KF6N70F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description C O F A FEATURES K ・VDSS=700V, ID=6A ・Drain-Source ON Resistance : L M R J RDS ON (Max)=1.65Ω @VGS=10V ・Qg(typ.)= 19nC D N N H SYMBOL RATING UNIT Drain-Source Voltage


    Original     		PDF KF6N70F

    Untitled

    Abstract: No abstract text available
    Text: NTE2976 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Low Input Capacitance D Low Static RDS on D Fast Switching Time D Guaranteed Avalanche Resistance Applications: D Switching Power Supply of AC 240V Input D High Voltage Power Supply


    Original     		PDF NTE2976

    NTE2976

    Abstract: DIODE 240v 3a mosfet for dc to ac inverter
    Text: NTE2976 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Low Input Capacitance D Low Static RDS on D Fast Switching Time D Guaranteed Avalanche Resistance Applications: D Switching Power Supply of AC 240V Input D High Voltage Power Supply


    Original     		PDF NTE2976 NTE2976 DIODE 240v 3a mosfet for dc to ac inverter

    Untitled

    Abstract: No abstract text available
    Text: SSW/I6N70A Advanced Power MOSFET FEATURES BVdss = 700 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 pA M ax. @ Vos = 700V


    OCR Scan     		PDF SSW/I6N70A SSW/I6N70À

    SSP6N70

    Abstract: ssp6n70a
    Text: SSP6N70A Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 mA Max. @ VOS= 700V ^DS(on) = 1 .8 & < CO II _o • ■


    OCR Scan     		PDF SSP6N70A O-220 SSP6N70 ssp6n70a

    6A 700V mosfet

    Abstract: 1552Q diode SM 6A
    Text: SSW/I6N70A A d v a n c e d Power MOSFET FEATURES BVDSs ~ 700 V ^DS on = • Lower Input Capacitance _D ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 700V 1.8 Q < Rugged Gate Oxide Technology II


    OCR Scan     		PDF SSW/I6N70A 100nc) Q040724 00M075S 6A 700V mosfet 1552Q diode SM 6A

    SSH6N70A

    Abstract: No abstract text available
    Text: Advanced SSH6N70A Power MOSFET FEATURES B^D SS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 700V H Low Rds(0n) ■ "I -552 £1 (Typ.)


    OCR Scan     		PDF SSH6N70A SSH6N70A

    Untitled

    Abstract: No abstract text available
    Text: Advanced SSH6N70A Power MOSFET FEATURES BVDSS • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 700V B Low Rds(0n) ■ "I -552 £1 (Typ.) CD Rugged Gate Oxide Technology


    OCR Scan     		PDF SSH6N70A

    Untitled

    Abstract: No abstract text available
    Text: SSH6N70A Advanced Power MOSFET FEATURES BV0SS = 700 V ^DS on = 1.8 £2 < CD Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 nA (M ax) @ Low Rdsjon) •*1-552 £2 (Typ.)


    OCR Scan     		PDF SSH6N70A

    SSF6N70A

    Abstract: No abstract text available
    Text: SSF6N70A Advanced Power MOSFET FEATURES BV0SS = 700 V ^DS on = 1.8 Q < Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 nA (Max.) @ VDS= 700V Low RDS(on) : 1-552 ft (Typ.)


    OCR Scan     		PDF SSF6N70A 003b333 003b33M D03b335 SSF6N70A