transistor 2n
Abstract: 2N 699 2n699
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR 2N 699 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VCER
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ISO/TS16949
C-120
2N699Rev270701
transistor 2n
2N 699
2n699
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transistor 699
Abstract: transistor 2n 2N699 2n 699
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR 2N 699 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION
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C-120
2N699Rev270701
transistor 699
transistor 2n
2N699
2n 699
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR 2N 699 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION
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C-120
2N699Rev270701
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Untitled
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON EPITAXIAL TRANSISTOR 2N 699 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise
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C-120
2N699Rev270701
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Untitled
Abstract: No abstract text available
Text: 699 FIBER SENSORS Head-separated Dual Display Digital Pressure Sensor For Gas DPS-400 SERIES DPH-100 SERIES Related Information •■General terms and conditions. F-17 ■■Glossary of terms. P.1373~ ■■Sensor selection guide. P.661~
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DPS-400
DPH-100
TERM26
DPC-L100/
DPH-L100
DPS-400/
DPH-100
DPC-100/
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Untitled
Abstract: No abstract text available
Text: ISO-9001 CERTIFIED BY DESC M.S.KENNEDY CORP. HIGH PERFORMANCE, HIGH VOLTAGE VIDEO DISPLAY DRIVER 645 8170 Thompson Road Cicero, N.Y. 13039 315 699-9201 MIL-STD-1772 CERTIFIED FEATURES: 70 Vpp Output Voltage 150 MHz Typical Bandwidth Transition Times Typically <2.5 nS
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ISO-9001
MIL-STD-1772
150pF
MSK645
Mil-H-38534
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transistor 38W
Abstract: No abstract text available
Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 173/173-1 HIGH POWER DUAL OPERATIONAL AMPLIFIER 8170 Thompson Road Cicero, N.Y. 13039 315 699-9201 MIL-PRF-38534 FEATURES: Extremely Compact Surface Mount Package Low Cost Dual High Power Amplifier Wide Supply Voltage Range: 5V to 40V
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ISO-9001
MIL-PRF-38534
MSK173
MSK173-1
MSK173
MSK173B
MSK173-1
MSK173B-1
Military-Mil-PRF-38534
transistor 38W
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Untitled
Abstract: No abstract text available
Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 173/173-1 HIGH POWER DUAL OPERATIONAL AMPLIFIER 8170 Thompson Road Cicero, N.Y. 13039 315 699-9201 MIL-PRF-38534 FEATURES: Extremely Compact Surface Mount Package Low Cost Dual High Power Amplifier Wide Supply Voltage Range: 5V to 40V
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ISO-9001
MIL-PRF-38534
MSK173
MSK173-1
MSK173
MSK173B
MSK173-1
MSK173B-1
Military-Mil-PRF-38534
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ZX6T9M522
Abstract: SOT23 MARK PD sot236 651 DUAL NPN SOT23-6
Text: Advanced Products Generation 6 Dual Die Transistors in SOT23-6 Part Polarity VCEO IC PD hFE V A W Min VCE sat Max mV at IC at IC A RCE(sat) at IB mA Part Mark m ZX6TDNE6 2x NPN 9 4.5 1.1 500 0.2 45 1 100 22 6NN ZX6TD9E6 2x PNP -9 -4.5 1.1 500 -0.01 -45 -1
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OT23-6
ZXT849
ZXT690B
ZXT1053A
ZXT790A
ZXT951
ZXT953
ZX6T9M522
SOT23 MARK PD
sot236 651
DUAL NPN SOT23-6
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Untitled
Abstract: No abstract text available
Text: i., Ona. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N5945 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD FEATURES: 45"_s -, I C Era • Common Emitter • PG = 9.0 dB at 2.0 W/470 MHz
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2N5945
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Untitled
Abstract: No abstract text available
Text: Ls.iis.ij <^>£.mi-(-ona\jicto\ One. C/ J 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLX96 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The BLX96 is Designed for Class A Television Band IV- V Amplifier
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BLX96
BLX96
250mA
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ms 12211
Abstract: 2N4951 2N4944 2n4946
Text: , U na. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN Transistors General Purpose Amplifiers and Switches (Continued) Type No. 2N4401 Case Style TO-92 VCBO (V) Mln VCEO (V) Mln VEBO (V) Mln
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2N4401
2N4944
I43-1
3Se-040Â
10-NOM
OOtS-0109
41J-2
ms 12211
2N4951
2N4944
2n4946
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2SC1226
Abstract: 335Panasonic 2SA699 2SA699A 2SC1226A 2SA699 H
Text: Power Transistors 2SC1226, 2SC1226A 2SC1226, 2SC1226A Silicon NPN Epitaxial Planar Type Package Dimensions Medium Power Amplifier Complementary Pair with 2SA699, 2SA699A • Feature • 5W o u tp u t in c o m p le m e n ta ry p air w ith 2S A 699, 2SA 699A
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2SC1226,
2SC1226A
2SA699,
2SA699A
2SC1226
335Panasonic
2SA699
2SA699A
2SC1226A
2SA699 H
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Untitled
Abstract: No abstract text available
Text: ISO -9001 CERTIFIED BY DESC M.S.KEIMNEDY CORP. HIGH PERFORMANCE, HIGH VOLTAGE VIDEO DISPLAY DRIVER ^ - _ K / l K v T J 8170 Thompson Road Cicero, N.Y. 13039 315 699-9201 FEATURES: • • • • • • MIL-STD-1772 CERTIFIED 70 Vpp Output Voltage 150 MHz Typical Bandwidth
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MIL-STD-1772
51343D0
MSK645
MSK645
il-H-38534
513430D
000047ft
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3W amp bridge
Abstract: No abstract text available
Text: /SO -9001 CERTIFIED BY DESC 105 HIGH POWER Q U A D O PERATIO N AL AMPLIFIER M.S. KENNEDY CORP 8 1 7 0 Thompson Road Cicero, N.Y. 13039 315 699-9201 FEATURES: MIL-PRF-38534 QUALIFIED • • • • • • Low Cost W ide Supply Voltage Range: 5 V to 40V
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MIL-PRF-38534
MSK105
MSK105B
Military-Mil-PRF-38534
3W amp bridge
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TCA 105B
Abstract: No abstract text available
Text: ISP-9001 CERTIFIED BY DESC HIGH PO W ER Q U A D ^ 105 O P E R A T IO N A L AMPLIFIER M.S.KENNEDY CORP. 8170 Thompson Road Cicero, N.Y. 13039 315 699-9201 FEATURES: MIL-PRF-38534 QUALIFIED • • • • • • Low Cost Wide Supply Voltage Range: 5V to 4 0 V
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ISP-9001
MIL-PRF-38534
SK105
SK105B
Military-Mil-PRF-38534
TCA 105B
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Untitled
Abstract: No abstract text available
Text: rZw SCS-THOMSON * im i S ¥ l( Q « S ST931ZT HIGH VOLTAGE IGNITiON COIL DRIVER _ NPN POWER DARLINGTON ADVANCE DATA • VERY RUGGED BIPOLAR TECHNOLOGY . BUILT IN CLAMPING ZENER . HIGH OPERATING JUNCTION TEMPERATURE APPLICATIONS . HIGH RUGGEDNESS ELECTRONIC
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ST931ZT
ST931ZT
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C 828 Transistor
Abstract: marking code 20A iC 828 Transistor LB1200
Text: Central CZT5338 Semiconductor Corp. NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5338 type is an NPN silicon power transistor manufac tured by the epitaxial planar process, epoxy mold ed in a surface mount package, designed for
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CZT5338
OT-223
CP219
26-September
OT-223
C 828 Transistor
marking code 20A
iC 828 Transistor
LB1200
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2SC4243
Abstract: No abstract text available
Text: K -7 > v 7. $ /Transistors 2SC4243 2SC4243 Triple Diffused Planar NPN Silicon Transistor ¡^¡foiJEiiliffl/H igh Voltage Amp. • ÿ<-ii\fSI2l/Dimensions Unit : mm 1 ) ¡l¡F tJ IT ‘ (fo •£> o 6.510.2 B Vceo=300V 2) =1 U ? ÿ f c H * § *¿ > '" '.1 ' ¡ H ' o
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2SC4243
0V/10m
2SC4243
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F MARKING 6PIN
Abstract: No abstract text available
Text: UMH3N IMH3A Transistor, digitai, dual, NPN, with 1 resistor Features Dimensions Units : mm available in UMT6 (UM6) and SMT6 (IMD, SC-74) package package marking: UMH3N and IMH3A; H3 UMH3N (UMT6) Z.OtO.2 package contains two independent NPN digital transistors
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SC-74)
DTC143TKA)
SC-70)
SC-59)
F MARKING 6PIN
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706a
Abstract: 2n1890 N1711 250M T018 T072 2N1724A 699 NPN hirel
Text: r SEMELAB LT]> 37E J> 6133167 □□□□□12 =] • SULB ■c 2C 2C “~2C S-2C * 2N 415 425 444 746 696 HI-REL HI-REL HI-REL HI-REL SCREEN NPN NPN NPN NPN NPN * * T077 T077 T077 T077 T039 35 75 35 50 60 0.03 0.1 0.05 0.1 0.2 lOOmin 35min 40min 35min 40min
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35min
40min
5/10m
5/50m
75min
20min
l/10m
706a
2n1890
N1711
250M
T018
T072
2N1724A
699 NPN
hirel
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bf 671
Abstract: BF116 BFW93 667 2N BFW 72 NPN/bf 671 699 NPN 2N3571 ESM 182 BF183
Text: TO 18 CB 6 CB 146 f 139 B (CB 76) Silicon NPN transistors, VH F - UH F amplification and oscillation T8mb = 25 0C Transistors N P N silisium, amplification e i oscillation U H F et V H F Case T yp « Boitier ptot (mW) VCEO (V) f GP (dB) h 21 E min max >C
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2SC5259
Abstract: No abstract text available
Text: TOSHIBA 2SC5259 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5259 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f=2GHz : Gain = 8.5dB (f = 2GHz) Unit in mm + 0.5 MAXIMUM RATINGS (Ta = 25°C) SYMBOL
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2SC5259
2SC5259
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2SC17
Abstract: 2SC1742
Text: ^ J j y N P N X ^ 5> ^ z / p i 7 L y - t B h ^ y ^ X 5> ilLICON NPN EPITAXIAL PLANAR TRANSISTOR 2SC O U H F - C - V K fijüf-tëiffiffl O I t l i 1742 i i INDUSTRIAL APPLICATIONS s- f - v - r « CML) U n it in m O U H F ~ C Band Low N oise A m p lifie r A p p lic a tio n s
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2sc1742
2SC1742
2SC17
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