Hitachi DSA00309
Abstract: No abstract text available
Text: HZU6.8L Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-678 Z Rev 0 July 1998 Features • Lower reverse current leakage compared with conventional products. • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information
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ADE-208-678
Hitachi DSA00309
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Hitachi DSA00218
Abstract: No abstract text available
Text: HZU6.8L Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-678 Z Rev 0 Jul. 1998 Features • Lower reverse current leakage compared with conventional products. • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information
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ADE-208-678
Hitachi DSA00218
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c58c
Abstract: No abstract text available
Text: 3 KP 5,0 . 3 KP 120CA ,* @ 5 8 . Absolute Maximum Ratings Symbol Conditions - . Values Units C < 6 < 5 * 26 H;< " H;< 2;2 B $ ./ 8 2+ , @ 5 Axial lead diode Unidirectional and bidirectional Transient
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120CA
KP120CA
c58c
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78C7
Abstract: 6C86 c282 C586 568C CC8C C585
Text: 3 KP 5,0 . 3 KP 120CA ,* @ 5 8 . Absolute Maximum Ratings Symbol Conditions - . Values Units C < 6 < 5 * 26 H;< " H;< 2;2 B $ ./ 8 2+ , @ 5 +8 *#+ 4 ' . =%4 -
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120CA
KP120CA
78C7
6C86
c282
C586
568C
CC8C
C585
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diode 6v8a
Abstract: diode 33CA 012 6V8A diode 6V8C 6V8C 6v8ca 737 39A diode 39CA 6v8a 15CA
Text: Silicon Avalanche Diodes 600W Surface Mount Transient Voltage Suppressors P6SMBJ Series Protect sensitive electronics against voltage transients induced by inductive load switching and lightning. Ideal for the protection of I/O interfaces, Vcc bus and other integrated circuits.
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200CA
220CA
diode 6v8a
diode 33CA
012 6V8A
diode 6V8C
6V8C
6v8ca
737 39A diode
39CA
6v8a
15CA
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diode 6v8a
Abstract: 39ca diode 6V8C diode 33CA 6v8ca 8v2a 33ca marking 12CA on 6v8a 62ca
Text: Silicon Avalanche Diodes 600W Surface Mount Transient Voltage Supressors P6SMBJ Series Protect sensitive electronics against voltage transients induced by inductive load switching and lightning. Ideal for the protection of I/O interfaces, Vcc bus and other integrated circuits.
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160CA
170CA
180CA
200CA
220CA
220CA
diode 6v8a
39ca
diode 6V8C
diode 33CA
6v8ca
8v2a
33ca
marking 12CA
on 6v8a
62ca
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Untitled
Abstract: No abstract text available
Text: H n ACH 1 H O P T O E L b C I RUN 1 Ò S 5 - iiS S T u b • 7 ' * 1? D T ~ O t'l3 09808 K Controlled Avalanche Diode 1 1 1 7 "“ • 68C M »E iMMTbEOS QDOTflafl h | T TrSv» :12° ~400V
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TS68C901B
Abstract: 68C901 delay lines thomson csf tp 9730 TS68C901 TS68C901BME4 TS68C901BMCB Thomson-CSF transmitter TS68C901BM 68000 thomson
Text: TS 68C 901B HCMOS MULTI FUNCTION PERIPHERAL DESCRIPTION The TS68C901B m ulti function peripheral CMFP is a member of the TS 68000 Family of peripheral and the CMOS version of the TS 68901. The CMFP directly interfaces to the TS 68000 processor fam ily via an asynchronous bus
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TS68C901B
DSTS68C901BT/0796
68C901
delay lines thomson csf
tp 9730
TS68C901
TS68C901BME4
TS68C901BMCB
Thomson-CSF transmitter
TS68C901BM
68000 thomson
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68c DIODE
Abstract: No abstract text available
Text: N AtlER PHILIPS/DISCRETE [i bb53131 QQEODQ6 A • BDX68; 68A BDX68B; 68C E5E D J V r- 33-31 DARLINGTON POWER TRANSISTORS P-N-P Darlingtons for audio output stages and general amplifier and switching applications. In a TO-3 envelope. N-P-N complements are BDX69, BDX69A, BDX69B and BDX69C.
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OCR Scan
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bb53131
BDX68;
BDX68B;
BDX69,
BDX69A,
BDX69B
BDX69C.
BDX68
68c DIODE
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Hitachi Scans-001
Abstract: DAG1A05
Text: bfl • DE I 44^205 ODOTfllS Ö *ty.ÿ'i # — F Suppression Diode H DAG1A "44962ÜS V r r m : 5 0 V -4 0 0 V *F(AV) : 1 .0 A HITACHI/CÜPTOkLECTRONICS) 68C 0 9 8 1 2 P : 100W r iv i D T~0(-(5 62M IN.(2.44) Color of cathode band 29MIN. 5M AX. 29MIN. 03 .5 M A X .
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OCR Scan
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62MIN.
29MIN.
DAG1A05
10/isec.
-20/js
50//s
I00//s
50/iF
22/iS
Hitachi Scans-001
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PDF
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BDX69
Abstract: 68A diode BDX68 BDX68B BDX69A BDX69B BDX69C diode 68A transistor 68c
Text: I [ L N AMER PHILIPS/DISCRETE: E5E D • bb53131 □QSQDQI '' A ■ BDX68; 68A BDX68B; 68C T-33-3! DARLINGTON POWER TRANSISTORS P-N-P Darlingtons for audio output stages and general amplifier and switching applications. In a TO-3 envelope. N-P-N complements are BDX69, BDX69A, BDX69B and BDX69C.
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OCR Scan
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BDX68;
BDX68B;
T-33-3Ã
BDX69,
BDX69A,
BDX69B
BDX69C.
BDX68
T-33-31
BDX69
68A diode
BDX68B
BDX69A
BDX69C
diode 68A
transistor 68c
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j2kg
Abstract: JT-V
Text: 449fc>2Ub H i I ACH1 / O P TQ tLE C TR U TTTÜ S l— • 68C 0 9 8 0 0 T-OhtS K (Controlled Avalanche Diode 7 '< 17 V08 "bfl DE | -29MIN (1.14) MMTbaDS G Q tnflQ D 1 Jj (0.14) «*3.5 MAX (2.44) -62M IN5.0MAX C o lo r o f c ath o d e Type , M T n . u )1
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OCR Scan
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449fc
V08GC600V)
-29MIN
1S2241
50/zF
j2kg
JT-V
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W09B
Abstract: W09C 1SR56-100 1SR56-200 1SR56-50 W09A 50V-200V hitachi Black FAST RECOVERY DIODE 1SR56 Hitachi Scans-001
Text: / Ö P T Ü E L k U i HUN I C S • 68C — K (Fast Recovery Diode) tfi 09822 DE^'HLSDS D DODTñEE I W09 ¿ — -62MINI2.44)5.0MAX -29M IN -29MIN ( 0 2 ) T (1.14) (1.14) CO H S <•* Symbol Cathode hanrl' band T '- Ç î' (f 0 T~ V RR M : 50V-200V *F(AV) :0 .6 A
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OCR Scan
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0V-200V
-62MINI2
-29MIN-'
-29MIN
W09BU00V)
1SR56-50
1SR56-100
1SR56-200
22jusecâ
W09B
W09C
1SR56-200
W09A
50V-200V
hitachi Black FAST RECOVERY DIODE
1SR56
Hitachi Scans-001
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FHF100-200_300-C_A_3D
Abstract: V09G i2t class CC
Text: = 5 ^ 0 • S H I I AcH '68C 0 9 8 2 4 =i* —-K Fast Recovery Diode DE I bfl mlH LSOS D D OC Hf l S H T V09 4£ T -Q 2 > '1 \ V r r m : 200V~600V lF(AV) : 0.8A trr: 0.4^s 03.5 M A X (0.14) T yp e \? p Symbol(Blue) Cathode band C o lo r o f cathode band
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1S2244
1S2246
1S224
22/iSec
600S2
FHF100-200_300-C_A_3D
V09G
i2t class CC
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U15J
Abstract: U15G 1SR11 1SR117 1SR117-400
Text: 4 4 9 6 2 0 5' H I T A C H I / O P T O E L E C T R O N I C S “-• —AxSEaftffl '>>)=>> ¥ -i U15 68C 0 9 7 9 8 D T - 0 \ " l3 — K (General Use Rectifier Diode) bfl DE I L m b 2 D 5 QOCHTTfl ? | z V RRM : 1 0 0 V -8 0 0 V u • f (A V ): 3 0 A
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--------------62M
28MIN
28MIN
U15EI400V)
22fisec
U15J
U15G
1SR11
1SR117
1SR117-400
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Untitled
Abstract: No abstract text available
Text: V17 4 4 9 6 2 0 5 H I T A C H I / C O P T O E Œ ü T R O N ICS 1— 68C 098 04 z ìi ^ — Y Controlled Avalanche Diode) bfl DE|44TbSOS - 6: - • - 2 9 M I N _ (1 .1 4 ) V r RM : 100V~400V lF(AV) : 1 3A Va VL: 805VMAX. GOOTflOM T I (0 .1 4 )
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OCR Scan
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44TbSOS
805VMAX.
Fj44c
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PDF
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68000 thomson
Abstract: EF6854 RAW MATERIAL INSPECTION instruction EF6852
Text: o THOMSON COMPOSANTS MILITAIRES ET SPATIAUX TS 68C 000 LOW POWER HCMOS 16/32 BIT MICROPROCESSOR DESCRIPTION The TS 68C000 reduced power consumption device dissipa te s an o rde r o f m a gn itu d e less pow er than th e HMOS TS 68000. The TS 68C000 is an im p le m e n ta tio n o f the
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OCR Scan
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68C000
16-bit
24-bit
32-bit
00033E1
68C000
68000 thomson
EF6854
RAW MATERIAL INSPECTION instruction
EF6852
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PDF
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V11N
Abstract: No abstract text available
Text: vir 44"y'6iiUb • H 1 I AÜHl # — / .U P I U t L h Ü I KUN1U S — — 68C 09818 'f'-cß- 9 K (Fast Recovery Diode V rR M : 80 0 V—1500V lF(AV) : 0 .4 A trr : 0.4a<s 0 3 .5 M A X (0 .1 4 ) -6 2 M IN I2 .4 4 ) - 2 9 M IN J i £ M * .£ - 2 9M lN ._ |
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OCR Scan
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50//F
V11N
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PDF
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1SR119
Abstract: CV19B
Text: — ttm rss • H M a u h íT ío p iu e le c iro n ic s T 68C 09 8 26 -f st — K Fast Recovery Diode V19 Tfl DE I M M T L E D S ODCHûEb ñ -62M IN(2.44)29M INI1.14)5.0M AX -2 9 M IN (0 . 2 ) (1.14) Symbol (Blue) S (0.14) „ 03.5 MAX T yp e V r r m : 1 0 0 V -6 0 0 V
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OCR Scan
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50//F
22/iSec
1SR119
CV19B
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PDF
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DFG1A2
Abstract: No abstract text available
Text: 4496205 H H A C H I / O P T O E L E U I R U N I C S > ^68C 09828 • ütjjÈ M & -f =t— K (F a st R e c o v e ry Diode DFGTA T ñ 29MIN. (1.14) DE I M4 ^ ^ 2 0 5 DOma^fl 1 D 7 "-¿ > 3 ‘ / 3 JL V R R M : 200V— 800V >F(AV): 1 0 A trr : 0.2/*s 5MAX.
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OCR Scan
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29MIN.
ID55i
DFG1A2
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PDF
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U058
Abstract: 1S2455 U05G 1S2458 Diode U05B U05B
Text: 4 4 9 6 2 0 5 HI T A C H I / O P T O t L h C T R O N I C S -• — ÜSÎËîifcffl '> ') 3 V ¿fof i [ — K (General-Use Rectifier Diode) U05 T ñ DE | MMTbEDS O D D W b -2 8 M IN ( 1 .1 ) 7.0MAX Type ¿5M A X -2 8 M IN —“ ( 1 . 1) a* (0.28) m
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OCR Scan
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U05JC800V)
50//F
22//SH
U058
1S2455
U05G
1S2458
Diode U05B
U05B
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PDF
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Untitled
Abstract: No abstract text available
Text: HZU6.8L Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-678 Z Rev 0 July 1998 Features • Lower reverse current leakage compared with conventional products. • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information
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OCR Scan
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ADE-208-678
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PDF
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 41MQ50 41MQ60 44A/50~60V FEATURES a Hermetically Sealed Case ° High Reliability Device ° Low Forward Power Loss, High Efficiency ° High Surge Capability »30 Volts through 60 Volts Types Available MAXIMUM RATINGS Voltage Rating \
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OCR Scan
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41MQ50
41MQ60
4A/50
41MQ50
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PDF
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1S2080
Abstract: 1S2082 V06T V06C HITACHI V06C 1S2081 V06J hitachi V06E hitachi rectifier V06C hitachi V06
Text: - ^ 4 9 6 2 O 5 HITACHI M Ü P T O E L h ü T R O N l U ä ^ • — Ä S V06 ^ ; 6 8 C 0 9 7 9 2 . 0 ô/'/X 'f ^ — K General-Use Rectifier Diode bû DE J ^ b E O S QDOTT^E -6 2 M IW 2 .4 4 )-2 9M IN 5 .0 M A X ¿ 3.5M A X (0.14)
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-62MIW2
29MIN
29MIN
1S2080
1S2081
1S2082
50//F
22/isec
1S2082
V06T
V06C HITACHI
V06C
V06J
hitachi V06E
hitachi rectifier V06C
hitachi V06
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