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    MOSART

    Abstract: MA88V11B EL driver 808u 1N4148 EL driving ma 1050
    Text: MA88V11B EL DRIVER Line-up & Specification V1.0 MosArt SEMICONDUCTOR CORP. 2000 All rights reserved MosArt MA88V11B EL DRIVER BONDING DIAGRAM EL IND VDD VSS OSC SELF EN Chip size : 808um * 665um Pad size : 90um * 90um FEATURES OVERVIEW „ 3V battery operation


    Original     		PDF MA88V11B 808um 665um MA88V11B MOSART EL driver 808u 1N4148 EL driving ma 1050

    2SA1224

    Abstract: E90115
    Text: PNP MEDIUM POWER MICROWAVE TRANSISTOR NE90100 NE90115 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: fT = 2.5 GHz The NE901 Series of PNP silicon epitaxial transistors is designed for high frequency amplifier and high speed switch­


    OCR Scan     		PDF NE74014 NE90100 NE90115 NE901 665um) 462um) 690um) IS12I 2SA1224 E90115