GY50NC60WD
Abstract: JESD97 STGY50NC60WD
Text: STGY50NC60WD N-channel 600V - 65A - Max247 Ultra fast switching PowerMESH IGBT Features Type VCES STGY50NC60WD 600V IC VCE sat (max)@25°C @100°C < 2.5V 65A • Very high frequency operation ■ Low CRES / CIES ratio (no cross-conduction susceptibility)
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STGY50NC60WD
Max247
GY50NC60WD
JESD97
STGY50NC60WD
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Untitled
Abstract: No abstract text available
Text: STGY50NC60WD N-channel 600V - 65A - Max247 Ultra fast switching PowerMESH IGBT Features Type VCES STGY50NC60WD 600V IC VCE sat (max)@25°C @100°C < 2.5V 65A • Very high frequency operation ■ Low CRES / CIES ratio (no cross-conduction susceptibility)
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STGY50NC60WD
Max247
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Untitled
Abstract: No abstract text available
Text: EuroMag Series PCB Mount Terminal Blocks EM2929 Series Euro-Mag Terminal Blocks Hi-Current; 10.16 Centers SPECIFICATIONS Rating: 65A, 600V Center Spacing: 0.40” 10.16mm Wire Range: #6-20 AWG Housing Material: UL rated 94V0 Thermoplastic Contact Material: Tin-Plated Copper
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EM2929
E62622;
EM292908
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Untitled
Abstract: No abstract text available
Text: 10-PZ06NRA069FP03-P967F78Y 10-FZ06NRA069FP03-P967F78 flow NPC 0 600V/60A & 99mΩ PS* Features flow 0 12mm housing ● *PS: 65A parallel switch 60A IGBT and 99mΩ MOSFET ● neutral point clamped inverter ● reactive power capability ● low inductance layout
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10-PZ06NRA069FP03-P967F78Y
10-FZ06NRA069FP03-P967F78
00V/60A
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E62622
Abstract: No abstract text available
Text: Euro-MAG Series PCB – Spring Clamp Single & Double Row Filtered Connectors MAGNUM 15288 Series Disconnect Terminal Blocks for DIN Rail Mount SPECIFICATIONS Rating: 65A, 600V* Center Spacing: .54” 13.7 mm Wire Range: #6-16 AWG Screw Size: #8-32 zinc plated philslot
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E62622;
E62622
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AL 1450 DV
Abstract: No abstract text available
Text: APT60M80L2VR 600V 65A 0.080W POWER MOS V TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT60M80L2VR
O-264
O-264
AL 1450 DV
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TSB20
Abstract: OEM 615 TSB200003DSUS R3164 09DS 01ds
Text: Europa Blocks Tubular Screw Barrier Strip 14.5MM PITCH, 65A SERIES TSB2000 PHYSICAL PROPERTIES Housing: HOUSING MATERIAL: Polyamide 6 FLAMMABILITY: UL94V-2 COLOR: Natural off white Terminal: TUBULAR CONTACT: Brass, tin plated SCREW: Steel, M3.5 SCREW PLATING: Zinc with chromate
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TSB2000
UL94V-2
R3164
TSB2000
01DSUS
02DSUS
03DSUS
TSB20
OEM 615
TSB200003DSUS
R3164
09DS
01ds
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NDN63
Abstract: NDN11 din mount 35mm
Text: Rail Mount Terminal Blocks NDN63 Inches Millimeters SPECIFICATIONS Rating: 65A, 600V; UL/CSA Center spacing: .375” (9.52) Number of poles: 3 Circuits per foot: 30 Circuit jumper: JN3, 2 circuits Wire size: AWG #6-18 CU Screw size: #10-32 Mounting options: 35mm DIN rail, C-rail
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NDN63
MT12-1/2
NDN111
NDN111-A.
NDN63
NDN11
din mount 35mm
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APT60M80L2VR
Abstract: No abstract text available
Text: APT60M80L2VR 600V 65A 0.080Ω POWER MOS V TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT60M80L2VR
O-264
APT60M80L2VR
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igbt module bsm 100 gb 60 dl
Abstract: No abstract text available
Text: BSM 50 GB 60 DL IGBT Power Module Preliminary data • 600V NPT Technology • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 50 GB 60 DL 600V 65A HALF-BRIDGE 1 Q67050-A1000-A70
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Q67050-A1000-A70
Oct-23-1997
igbt module bsm 100 gb 60 dl
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Untitled
Abstract: No abstract text available
Text: APT60M80L2VFR 0.080Ω 600V 65A POWER MOS V FREDFET L2VFR TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT60M80L2VFR
O-264
O-264
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Untitled
Abstract: No abstract text available
Text: APT60M80L2VR 600V 65A 0.080Ω POWER MOS V MOSFET L2VR TO-264 Max V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT60M80L2VR
O-264
O-264
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Untitled
Abstract: No abstract text available
Text: APT60M80L2VR 600V 65A 0.080Ω POWER MOS V MOSFET L2VR TO-264 Max V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT60M80L2VR
O-264
O-264
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00456
Abstract: No abstract text available
Text: APT60M80L2VFR 600V 65A POWER MOS V FREDFET 0.080Ω L2VFR TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT60M80L2VFR
O-264
O-264
00456
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SiC MOS
Abstract: mosfet 60a 200v
Text: APTM100A13SC Phase leg Series & SiC parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 130mΩ Ω max @ Tj = 25°C ID = 65A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Power MOS 7 MOSFETs
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APTM100A13SC
hig10
50/60Hz
SiC MOS
mosfet 60a 200v
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Untitled
Abstract: No abstract text available
Text: APTM100A13SCG Phase leg Series & SiC parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 130mΩ typ @ Tj = 25°C ID = 65A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies VBUS Features • Power MOS 7 MOSFETs
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APTM100A13SCG
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TD8A
Abstract: No abstract text available
Text: TD8A60 Standard Triac Symbol ○ 2.T2 TO- 252 VDRM = 600V IT RMS = 8 A ▼▲ ○ 3.Gate ITSM = 65A 1.T1 ○ 1 2 3 Features ◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 8 A ) ◆ High Commutation dv/dt General Description
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TD8A60
50Hz/60Hz,
O-252
TD8A
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Untitled
Abstract: No abstract text available
Text: APTM100A13SC Phase leg Series & SiC parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 130mΩ max @ Tj = 25°C ID = 65A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Power MOS 7 MOSFETs
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APTM100A13SC
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Untitled
Abstract: No abstract text available
Text: BSM 35 GB 120 DL IGBT Power Module Preliminary data • Low Loss IGBT • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 35 GB 120 DL 1200V 65A IC Package Ordering Code HALF BRIDGE 1 Maximum Ratings
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Oct-30-1997
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Untitled
Abstract: No abstract text available
Text: Modular Terminals Type WKI U4oot 10 mm2 U4oot 16 mm2 74 Wire Size_ fine stranded 1-10 CSA_ 600V 16-6 AWG 70A UL_ 600V 16-6 AWG 65A stranded 10-16 stranded 10 fine stranded 1-16 600V 14-4 AWG 95A 600V _1_2j4_AWG_ 65A Fjeld/90A Factory
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Fjeld/90A
SL/35
70mm2
120mm2
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WE VQE 11 E
Abstract: DIODE 65A IRGT1065F06 FF1000
Text: International Ö R edffler PD-9.957B IRGTI065F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT • Rugged Design »Simple gate-drive .Fast operation up to 10KHz hard switching, or 50KHz resonant .Switching-Loss Rating includes all "tail" losses VCE = 600V lc = 65A
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IRGTI065F06
10KHz
50KHz
C-218
4ASS452
WE VQE 11 E
DIODE 65A
IRGT1065F06
FF1000
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vqe 24 e
Abstract: vqe 24 d
Text: euoec BSM 50 GB 60 DL F IGBT Power Module Prelim inary data • 600V NPT Technology • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VbE BSM 50 GB 60 DL 600V 65A Package O rdering Code HALF-BRIDGE 1 Q67050-A1000-A70
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Oct-23-1997
vqe 24 e
vqe 24 d
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rg 35 DIOD
Abstract: No abstract text available
Text: IRGKI065F06 Fast Speed IGBT "CHOPPER" IGBT INT-A-PAK • Rugged Design • Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant • Switching-Loss Rating includes all "tail" losses V Œ = 600V ic = 65A VC£ O N < 2 .3 V D e s c rip tio n
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IRGKI065F06
10KHz
50KHz
rg 35 DIOD
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10si6
Abstract: 07.311.4153.0 57.910.5053.0
Text: Modular Fuse Terminal & Feed-through Terminal with Universal Foot 10mnr Wire Size fine stranded 1-10 CSA_ 600V* 16-6 AWG 15A 600V 22-6 AWG 15A UL A p p ro va ls 10mrrr stranded 10-16 fine stranded 1-10 600V 16-6 AWG stranded 10-16 65A ' Ä ® ««&<§ <m
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10mnr
10mrrr
10/Si
10si6
07.311.4153.0
57.910.5053.0
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