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MATRA HARRIS SEMICONDUCTOR (SEE TEMIC) HM3-65767BK-5
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Bristol Electronics	HM3-65767BK-5		17,731			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Matra MHS HM365767BN5 16K X 1 STANDARD SRAM Standard SRAM, 16KX1, 50ns, CMOS, PDIP20
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ComSIT USA	HM365767BN5		11			1 - 10 - 100 - 1000 - 10000 -	Get Quote

65767B Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
65728 Abstract: No abstract text available Text: HM 65767B MATRA MHS 16 K x 1 High Speed CMOS SRAM Introduction The HM 65767B is a high speed CMOS static RAM organized as 16384x1 bit. It is manufactured using MHS’s high performance CMOS technology. All inputs and outputs of the HM 65767B are TTL compatible and operate from single 5 V supply thus	Original	PDF	65767B 65767B 16384x1 65728
TCA780 Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP	Original	PDF	1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
TEMIC K153P Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910 Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2	Original	PDF	WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
P-Channel Depletion-Mode Abstract: MD80C31 JANTX2N4858 5962-9089101MEA SI9110AK JANTX2N6661 4Kx8 sram ttl MGM TRANSFORMER JANTX2N5114 janTXV2N5545 Text: Aerospace and Defense Product Offering Siliconix MIL–S–19500 Compliant Devices 2N5547JANTX MIL–S–19500/430 Siliconix Part No. Description 2N5547JANTXV MIL–S–19500/430 2N4856JAN MIL–S–19500/385 2N6660JANTX MIL–S–19500/547 2N4856JANTX MIL–S–19500/385	Original	PDF	2N5547JANTX 2N5547JANTXV 2N4856JAN 2N6660JANTX 2N4856JANTX 2N6660JANTXV 2N4856JANTXV 2N6661JAN 2N4857JAN 2N6661JANTX P-Channel Depletion-Mode MD80C31 JANTX2N4858 5962-9089101MEA SI9110AK JANTX2N6661 4Kx8 sram ttl MGM TRANSFORMER JANTX2N5114 janTXV2N5545
Untitled Abstract: No abstract text available Text: T em ic HM 65767B MATRA MHS 16 K X 1 High Speed CMOS SRAM Introduction The HM 65767B is a high speed CMOS static RAM organized as 16384x1 bit. It is manufactured using MHS’s high performance CMOS technology. All inputs and outputs of the HM 65767B are TIL	OCR Scan	PDF	65767B 65767B 16384x1 bfl45b 00GS411
HM 65767B Abstract: 300MILS Text: Tem ic Semiconductors 16 K x 1 High Speed CMOS SRAM HM 65767B Short description. Please refer to the full datasheet available on TEMIC web for detailed technical information. Introduction The HM 65767B is a high speed CMOS static RAM organized as 16384x1 bit. It is manufactured using	OCR Scan	PDF	65767B 65767B 16384x1 ss65W HM 65767B 300MILS
hm65767 Abstract: HM 65767B 65767B Text: HM 65767B DATA SHEET_ 16 Kx 1 HIGH SPEED CMOS SRAM FEATURES FAST ACCESS TIME COMMERCIAL : 25/35/45/55 ns max MILITARY : 25/35/45/55 ns (max) LOW POWER CONSUMPTION ACTIVE: 385 mW (max) STANDBY : 110 mW (max) WIDE TEMPERATURE RANGE : - 55'C TO + 125’C	OCR Scan	PDF	65767B 16384x1 50KHzÂ HM65767B/Rev hm65767 HM 65767B
t 16 k Abstract: F01011 Text: Tem ic HM 65767B MATRA MHS 16 K X 1 High Speed CMOS SRAM Introduction The HM 65767B is a high speed CMOS static RAM organized as 16384x1 bit. It is manufactured using MHS’s high performance CMOS technology. Access times as fast as 25 ns are available with maximum	OCR Scan	PDF	65767B 16384x1 00GS411 t 16 k F01011
Untitled Abstract: No abstract text available Text: HM 65767B DATA SHEET 16 K x 1 HIGH SPEED CMOS SRAM FEATURES . . . FAST ACCESS TIME COMMERCIAL: 25/35/45/55 ns max MILITARY: 25/35/45/55 ns (max) LOW POWER CONSUMPTION ACTIVE: 385 mW (max) STANDBY: 110 mW (max) . . 300 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS	OCR Scan	PDF	65767B 65767B 16384x1 65767B/Rev
Untitled Abstract: No abstract text available Text: DATA SHEET_ HM 65767B 16 K x 1 HIGH SPEED CMOS SRAM FEATURES 300 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE SINGLE 5 VOLT SUPPLY FAST ACCESS TIME	OCR Scan	PDF	65767B 65767B GDG33T3 65767Bi