Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    6561 IC Search Results

    6561 IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    6561 IC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HM1-6561

    Abstract: No abstract text available
    Text: HM-6561/883 256 x 4 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6561/883 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous


    Original
    PDF HM-6561/883 MIL-STD883 HM-6561/883 20mW/MHz 200ns HM1-6561

    6561

    Abstract: HM1-6561-9 6561-9 HM-6561-9 HM1-6561 HM1-6561B-9 HM-6561 HM-6561B-9 L 6561 32 x 32 matrix
    Text: HM-6561 256 x 4 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max The HM-6561 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation.


    Original
    PDF HM-6561 HM-6561 20mW/MHz 200ns 6561 HM1-6561-9 6561-9 HM-6561-9 HM1-6561 HM1-6561B-9 HM-6561B-9 L 6561 32 x 32 matrix

    SDT96905

    Abstract: SDT14304 TO114
    Text: Solitron Devices Page 1 of 2 Switchtron Power Transistors Device Type Polarity V 1 CEO C sus (Peak) VOLTS AMPS h FE MIN/ MAX @ 1C AMPS V CE (sat) MAX @ IC AMPS 1TMHz MIN. PT(W) MAX. tf micro sec. @ 1C AMPS Case Type 2N 6546 * NPN 300 30 10/ 60 5.0 1.50 10.0


    Original
    PDF MIL-S-19500/525 20Catalog/General 20Catalog/SWITCHTRO. SDT96905 SDT14304 TO114

    6561

    Abstract: 6561 IC
    Text: HM-6561 HARRIS S E M I C O N D U C T O R 256 x 4 CMOS RAM March 1997 Features Description • Low Power Standby. 50|iW Max The HM-6561 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous cir­


    OCR Scan
    PDF HM-6561 HM-6561 6561 6561 IC

    Untitled

    Abstract: No abstract text available
    Text: HM-6561/883 Semiconductor 256 x 4 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HM-6561/883 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous


    OCR Scan
    PDF HM-6561/883 HM-6561/883 100kHz

    HM3-6561-9

    Abstract: HM3-6561B-9 hm1-6561b/883
    Text: f f t H A R R HM-6561 I S S E M I C O N D U C T O R 256 X 4 CMOS RAM February 1992 Features Description • Low Power Standby. 50|iW Max. The HM-6561 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design


    OCR Scan
    PDF HM-6561 HM-6561 20mW/MHz 200ns HM3-6561-9 HM3-6561B-9 hm1-6561b/883

    Untitled

    Abstract: No abstract text available
    Text: HM-6561/883 HARRIS S E M I C O N D U C T O R 256 x 4 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HM-6561/883 is a 256 x 4 static CMOS RAM fabricated


    OCR Scan
    PDF HM-6561/883 MIL-STD883 HM-6561/883 200ns 100kHz

    Untitled

    Abstract: No abstract text available
    Text: cm H A R R HM-6561/883 IS S E M I C O N D U C T O R 256 x 4 CMOS RAM February 1992 Features Description • This Circuit is Processed in Accordance to Mil-Std883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6561/883 is a 256 x 4 static CMOS RAM fabricated


    OCR Scan
    PDF HM-6561/883 Mil-Std883 HM-6561/883 MIL-M-38510 MIL-STD-1835, GDIP1-T18 HHW561/883

    MPS6563

    Abstract: No abstract text available
    Text: MPS 6560 • MPS 6562 MPS 6561 - MPS 6563 COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS CASE T0-92A THE MPS656 O, MPS 656 I NFN AND MPS6562 , MPS6563 (PNP) ARE SILICON PLANAR EPITAXIAL TRANSISTORS DESIGNED FOR COMPLEMENTARY SYMMETRY AUDIO OUTPUT APPLICATIONS. THEY FEATURE LOW COLLECTOR TO


    OCR Scan
    PDF T0-92A MPS656 MPS6562 MPS6563 500mA) MPS6561Ã MPS6560 MPS6562 MPS6563 100mA

    TEA 5560

    Abstract: TA5561 5561 5560 C15-1 L 6561 318s 67376-2
    Text: 64-Bit 16 x 4 Random Access M em ory 5560/ 6560, 5561/6561 Features/B enefits • • • • • • Selection Gui Advanced Schottky processing. Low input current (250 /xA m axim um ). Data outputs are off during a write cycle. Fully decoded and TTL compatible.


    OCR Scan
    PDF 64-Bit J167TÃ TEA 5560 TA5561 5561 5560 C15-1 L 6561 318s 67376-2

    ax3003

    Abstract: No abstract text available
    Text: HM -6561 23 HARRIS 256 x 4 CMOS RAM Features • • • • • • • • • • • • Pinout HM-6100 Com patible Low Standby P o w e Max. Low Operating P o w e r. 20mW/MHz Max.


    OCR Scan
    PDF HM-6100 20mW/MHz 220ns ax3003

    HM-6561-5

    Abstract: No abstract text available
    Text: Specifications HM-6561-5 ABSOLUTE M A XIM U M RATINGS OPERATING RANGE Supply Voltage - VCC - G N D -0 .3 V to +8.0V A pplied In p u t or O u tp u t Voltage (G N D -0 .3 V ) to (VCC + 0.3V ) -650C t o +1500C Storage Temperature Operating Supply V oltage -V C C


    OCR Scan
    PDF HM-6561-5 -650C HM-6561-5

    6562

    Abstract: HM-6562 HM-6641 HWI-6562 HM-6611 HM-6561 HM-6661 6562 s harris 6562
    Text: HARRIS HM-6562 SEM ICO NDUCTOR P R O D U C T S DIVISI ON A DIVISION OF HARRIS CORPORATION 256 <4 C M O S R A M NOT RECOMMENDED FOR NEW DESIGNS SEE HM-6561 Pinout Features LOW POWER STANDBY LOW POWER OPERATION FAST ACCESS TIME D A T A R ETENTIO N VOLTAG E T T L COMPATIBLE IN /O U T


    OCR Scan
    PDF HM-6561 HM-6562 20mW/MHz 220nsec HWI-6562 HM-6611 HM-6641 HM-6661 6562 HM-6562 HM-6641 HM-6611 HM-6561 HM-6661 6562 s harris 6562

    ic 358s

    Abstract: 358s ic+358s 1358S I358S
    Text: ANI 358 AN6562 ANI 358S (AN6562S) .AN6561 OPERATIONAL AMPLIFIERS AN1 358 (AN6562), AN1 358S (AN6562S) ,AN6561 Dual Operational Amplifiers • Outline T h e A N 1358 (A N 6562), the A N 1358S (A N 6562S) and the AN 6561 are dual operational am p lifiers w ith phase com p en sa­


    OCR Scan
    PDF AN6562) AN6562S) AN6561 1358S 6562S) ic 358s 358s ic+358s 1358S I358S

    656z

    Abstract: HM-6562-5 HM-6562 HM-6561 HM-6611 HM-6562-9 HM-6562-2 ic HM 392 - 110 harris 6562
    Text: HARRIS H M - 6 5 6 2 256 X 4 C M O S R A M S E M IC O N D U C T O R PRODUCTS DIVISION f p A DIVISION OF HARRIS CORPORATION NOT RECOMMENDED FOR NEW DESIGNS SEE HM-6561 Features Pinout LO W PO W ER S T A N D B Y LO W PO W ER O P E R A T IO N F A S T A C C E S S T IM E


    OCR Scan
    PDF HM-6562 HM-6561 20mW/MHz 220nsec HM-6562 656z HM-6562-5 HM-6561 HM-6611 HM-6562-9 HM-6562-2 ic HM 392 - 110 harris 6562

    6561

    Abstract: HD 6561 MI 6561 harris 6408 256X4 CMOS RAM prom 256x4 bit 20/MI 6561 HD-6101 HD-6402 HM-6322
    Text: an HARRIS HM-6561 SEM ICO NDUCTOR P R O D U C T S DIVISI ON A DIVISIO N OF HARRIS CORPORATION 256 x 4 C M O S R A M Pinout Features HM-6100 C O M P A T IB L E LOW S T A N D B Y POW ER LOW O P E R A T IN G POW ER F A S T ACCESS TIM E D A T A R E T E N T IO N V O L T A G E


    OCR Scan
    PDF HM-6561 HM-6100 50/UW 220nsec HM-6561 HB-61000 HB-61001 MICRO-12 HM-6515, HM-6516 6561 HD 6561 MI 6561 harris 6408 256X4 CMOS RAM prom 256x4 bit 20/MI 6561 HD-6101 HD-6402 HM-6322

    cl 6562

    Abstract: No abstract text available
    Text: HARRIS HM-6562 S E M IC O N D U C T O R PRODUCTS DIVISION A DIVISION OF HARRIS CORPORATION 256 x 4 C M O S RA M NOT RECOMMENDED FOR NEW DESIGNS SEE HM-6561 Features Pinout LO W POWER S T A N D B Y LO W POWER O P E R A T IO N F A S T ACCESS T IM E D A T A R E T E N T IO N V O L T A G E


    OCR Scan
    PDF HM-6562 220nsec HM-6561 cl 6562

    Untitled

    Abstract: No abstract text available
    Text: HARRIS H M -6561/883 256 x 4 CMOS RAM June 1 989 P in o u t F eatures H M 1-6 5 6 1 /8 8 3 CERAMIC DIP TOP VIEW • T h is C ir c u it is P ro c e s s e d in A c c o rd a n c e to M il- S t d - 8 8 3 a n d is F u lly C o n fo r m a n t U n d e r th e P ro v is io n s o f P a ra g ra p h 1 .2 .1 .


    OCR Scan
    PDF

    diagram ic 12f 629

    Abstract: 30f 124 equivalent diode F6 4d diode F4 4e diode F6 5b MC4006 603 31f ADB 646 MC7414 ic 324
    Text: MCM6560 MCM6561 MCM6562 MOS 8192-BIT BINARY ADDRESSABLE READ ONLY MEMORIES N C H A N N E L , L O W T H R E S H O L D 8K BINARY ADDRESSABLE R EA D O N LY MEMORIES The M C M 6560 is a mask program m able 8 1 9 2 -b it static Read O n ly M em o ry fabricated w ith N-Channei metal gate technology. A


    OCR Scan
    PDF MCM6560 MCM6561 MCM6562 8192-BIT MCM6562 M6560, diagram ic 12f 629 30f 124 equivalent diode F6 4d diode F4 4e diode F6 5b MC4006 603 31f ADB 646 MC7414 ic 324

    General Semiconductor diode ed 7b

    Abstract: 30f 124 equivalent diode F4 4e 3AB 973 734 2D 1002 diode 7A SF MC4006 BV 726 C 1 Converter 881 2ac cr 29c
    Text: M O T O R O L A MCM6560 MCM6561 MCM6562 , MOS 8192-BIT BINARY ADDRESSABLE READ ONLY MEMORIES N -C H A N N E L . LO W T H R E S H O L D T h e M C M 656Û is a mack p ro g ra m m a b le 8 1 9 2 -b it s ta tic Read O n ly M e m o ry fa b ric a te d w ith N-C hannel m e ta l gate te c h n o lo g y . A


    OCR Scan
    PDF MCM6560 MCM6561 MCM6562 8192-BIT MCM6562 MC7404 General Semiconductor diode ed 7b 30f 124 equivalent diode F4 4e 3AB 973 734 2D 1002 diode 7A SF MC4006 BV 726 C 1 Converter 881 2ac cr 29c

    motorola 6820

    Abstract: motorola 7852 motorola 8026 motorola ST 1076 trw 7730 6840 1 motorola ic 8279
    Text: MOTOROLA SC 1EE D I b3t.7ESM GGfifiMGl 3 | XSTRS/R F MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA TRW 53001 Se rie s The RF Line M ic r o w a v e Linear P o w e r T ra n sisto rs 7.5 TO 8.5 dB 1 TO 3 GHz 0.8 W ATT M ICRO W AVE LINEAR POWER T R A N SIST O R S


    OCR Scan
    PDF TW-200 TRW53001 TRW53001 JUNCT10N motorola 6820 motorola 7852 motorola 8026 motorola ST 1076 trw 7730 6840 1 motorola ic 8279

    diode E6L

    Abstract: infrared security alarm notes e8 capacitor pin configuration Bc327 UNIVERSAL ir remote decoder BC327 TEA5501 TEA5551 TEA5591 Security Systems
    Text: Philips Sem iconductors Integrated C ircuits Product specification Coded locking circuit for security systems one-shot output; 6.5k codes GENERAL DESCRIPTION The TEA5501 is an encoder/decoder circuit, for security systems. In the system a complex code is


    OCR Scan
    PDF TEA5501 TEA5501 IBC558 BC327 TEA5551 TEA5591 71iafl2t. diode E6L infrared security alarm notes e8 capacitor pin configuration Bc327 UNIVERSAL ir remote decoder BC327 TEA5551 TEA5591 Security Systems

    TDA3047

    Abstract: TEA5501 TDA3047 application notes
    Text: Philips Components D E V E L O P M E N T DATA TEA5501 T h is data sh e e t c o n ta in s a dvance inform ation and sp e cifica tio n s w h ic h are su b je ct to c h a n g e w ith o u t notice. CODED LOCKING CIRCUIT FOR SECURITY SYSTEMS one-shot output; 6.5 k codes


    OCR Scan
    PDF TEA5501 TEA5501 M89-1343/RC TDA3047 TDA3047 application notes

    1u4 tube

    Abstract: tube 1U4 electron tube 1u4 11II1 rs tube 90VOLTS Scans-0017352 Iu4 tube
    Text: IU4 TUNO-SOL PENTODE C O A T E D F IL A M E N T NC A F A N D R F A P P L IC A T IO N S A N Y M O U N T IN G P O S IT IO N B O T T O M VI EW B A S IN G D IA G R A M J E D E C 6AR GLASS BULB M IN IA T U R E B U T T O N 7 P IN B A S E E7-1 O U T L IN E D R A W IN G


    OCR Scan
    PDF RS-239 1u4 tube tube 1U4 electron tube 1u4 11II1 rs tube 90VOLTS Scans-0017352 Iu4 tube