FC FB mh
Abstract: No abstract text available
Text: JL R^kb^l 065:uC1 RmZg]Zk].ymJ/ FEASTQER 63 QZm^] phkdbg` ohemZ`^ kZg`^ ;38 mh 655U DC46;5 mh 9:5U DC Zm hi^kZmbhg m^fi^kZmnk^ kZg`^ 295 mh 065:uC427: mh 065:uC3 73 Sabl l^kb^l bl _hk \hffngb\Zmbhg ^jnbif^gml1 lpbm\abg` ihp^k lniier1 bg]nlmkbZe f^Zlnkbg` bglmknf^gml1 Znmhfhmbo^ ^e^\mkb\ ikh]n\ml1 ^m\3
|
Original
|
PDF
|
uC427:
FC FB mh
|
LM 2536
Abstract: No abstract text available
Text: ;9=E/>0;9=E/>E 4FEA?AE<G8 C8>4I 9MJWXUMV , , , , , , MZq3 \hgmbghnl \nkk^gm :5B MZq3 fZdbg` \nkk^gm 755B Fqm^g]^] m^fi3 kZg`^ ni mh 67: Wbma ab`aer ^lmZ[ebla^] k^ebZ[bebmr Smkhg` k^lblmZg\^ Z[bebmr mh lah\d - ob[kZmbhg Nh \aZg`^ h_ lpbm\abg` lmZm^ o^klbhg Zm [k^Zd]hpg
|
Original
|
PDF
|
855fV
LM 2536
|
129u
Abstract: 468m MDT*2010E 106U MDT2005E MDT2010E
Text: Date : 8-06-‘09 MDT2005E & MDT2010E JE 使用注意事項 由於 MDT2005E & MDT2010E(JE) 與 IB 版製程不同注意下列事項 : I. Power edge detector (PED)的功能，(@VDD=5V ,PED=ENABLE)啟動電位約在 1.9V~2.3V 左右 II. 使用 RC 振盪時，需調整 RC 值 .
|
Original
|
PDF
|
MDT2005E
MDT2010E
MDT2010E
129u
468m
MDT*2010E
106U
MDT2005E
|
EHP 16
Abstract: 65A0 IQM695561
Text: 42?+8 .>=979=5?1 ;16.A 2EBOPMEN U 95A lpbm\abg` \ZiZ[bebmr U TZkbhnl fhngmbg` m^kfbgZmbhgl ZoZbeZ[e^ U 6 Fhkf A /7q=<0 \hgmZ\m ZkkZg`^f^gm U PhHQ - EJT \hfiebZgm /4.;./=1;5<=5/< ChgmZ\m ZkkZg`^f^gm 6A Rri3? 95fT /Zm 65A0 ThemZ`^ ]khi /bgbmbZe0 KZq3? 7:5fT /Zm 65A0
|
Original
|
PDF
|
7738Hs
EHP 16
65A0
IQM695561
|
LM 739 N
Abstract: lm 538 n A083 65A0 IQM695561 L6395 lm 538
Text: 75B- 1A@<:<@8B4 >491D 5IFSTQIR Y 95A lpbm\abg` \ZiZ[bebmr Y TZkbhnl fhngmbg` m^kfbgZmbhgl ZoZbeZ[e^ Y 6 Fhkf A - 6 Fhkf C \hgmZ\m ZkkZg`^f^gm Y UZla mb`am Zg] ]nlm ikhm^\m^] mri^l ZoZbeZ[e^ @VPKGFL 1PPLKGFSKONR Y PhHQ - EJT \hfiebZgm Fh` eZfi - a^Z]eb`am \hgmkhe1 P^Zk pbg]hp ]^_h``^k1
|
Original
|
PDF
|
|
w636
Abstract: 7V65 7A17C OBP16 SA 537 7816A
Text: 6481~6481}@ /A@<:<@7B3 >39/D 4IFSTQIR Z Rn[fbgZmnk^ Znmhfhmbo^ k^eZr Z Spbg l^iZkZm^ lrlm^fl .Spbg o^klbhg/ Rbg`e^ Spbg Z Sa^ k^_ehp lhe]^kbg` o^klbhg .hi^g o^gm ahe^/ ZoZbeZ[e^ .HFJC2S/ @WPKGFL /PPLKGFSKONR Z QhHR - EKU \hfiebZgm C^gmkZe ]hhk eh\d1 Agmb2ma^_m eh\d1 Ohp^k ]hhkl - pbg]hpl1
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: 2SB075030MLJL 2SB075030MLJL SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION ¾ 2SB075030MLJL is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ¾ Low power losses, high efficiency; ¾ Guard ring construction for transient protection;
|
Original
|
PDF
|
2SB075030MLJL
2SB075030MLJL
|
EMT CONDUIT
Abstract: ul listed conduit E22132 651SUS crouse-hinds locknut 66-2U 650SUS 653u 666US emt conduit set screw connector
Text: 8-9.qxp 7/22/2010 1:05 PM Page 9 Thin Wall Conduit Fittings For EMT Conduit Compression Type Fittings - Made in the USA Connector – Non-Insulated MADE IN THE USA FITTINGS UL File No. E-22132 Applications: Made in the USA conduit fittings are used: EMT Fittings
|
Original
|
PDF
|
E-22132
650SUS
651SUS
652US
653US
654US
655US
656US
657US
658US
EMT CONDUIT
ul listed conduit
E22132
651SUS
crouse-hinds locknut
66-2U
650SUS
653u
666US
emt conduit set screw connector
|
LMM 2057
Abstract: TLC 7555 MBI 5066 samxon GR chn 809 LM 805 CV yx 805 3054 CHN 747 CHMC 46 CHN 932
Text: aJ}1E R^kb^l SZ[e^ O37 aJ3@s R^kb^l CaZkm O39 ,5M- Aiieb\Zmbhg Gnb]^ebg^l O3: aJ{z OZkm Mnf[^k Rrlm^f O369 {`aJbW SZiibg` Ri^\b_b\Zmbhgl O36: 1obW OZ\dbg` Ri^\b_b\Zmbhgl O36; K^Z] Fhkfbg` Ri^\b_b\Zmbhg O36< LbgbZmnk^ Sri^ O36= ymJ G^g^kZe Onkihl^ O387 =H>J
|
Original
|
PDF
|
O3659
O3666
O3678
LMM 2057
TLC 7555
MBI 5066
samxon GR
chn 809
LM 805 CV
yx 805 3054
CHN 747
CHMC 46
CHN 932
|
BJ 938
Abstract: LQH6c 7B339 MJN7
Text: 648: /A@<:<@7B3 >39/D 4IFSTQIR Z Roal[`af_ [YhYZadalq mh lg 75A Z Rap \a^^]j]fl [gflY[l YjjYf_]e]flk Z Tf]f[dgk]\ Yf\ hdYkla[ k]Yd]\ lqh]k YnYadYZd] Z QgHR - EKU [gehdaYfl @VPKGFL /PPLKGFSKONR C]fljYd \ggj dg[c1 Ogo]j \ggjk - oaf\gok1 Ka_`laf_1 ^dYk`da_`l - af\a[Ylgj dYeh [gfljgd1 Ifkljme]fl [gfljgd1
|
Original
|
PDF
|
7v95A
7v85A47v
75A465A
7v75A
BJ 938
LQH6c
7B339
MJN7
|
Samsung S3C4510
Abstract: S3C4520 IC Timer Cookbook S3C4520A LT 0934 as011 FM0 encoder verilog coding
Text: 22-S3-C4520A-032001 USER'S MANUAL S3C4520A 32-Bit RISC Microprocessor Revision 2 Product Overview Programmer′′s Model Instruction Set System Manager Unified Instruction/Data Cache HDLC Controller IOM2 Controller TSA Timer Slot Assigner DMA Controller
|
Original
|
PDF
|
22-S3-C4520A-032001
S3C4520A
32-Bit
S3C4520A
S3C4520A01;
Samsung S3C4510
S3C4520
IC Timer Cookbook
LT 0934
as011
FM0 encoder verilog coding
|
Untitled
Abstract: No abstract text available
Text: 5370~5370}? .@?;9;?6A2 =28.C 3HERSPHQ Y Rn[fbgbZmnk^ Znmhfhmbo^ k^eZr Y Sa^ p^b`am bl hger 9` _hk lbg`e^ k^eZr Y Eqm^g]^] m^fi3 kZg`^ ni mh 65: Y Sa^ k^_ehp lhe]^kbg` o^klbhg .hi^g o^gm ahe^/ ?VOJFEK .OOKJFERJNMQ ZoZbeZ[e^ .HFJC2S/ C^gmkZe ]hhk eh\d1 Agmb2ma^_m eh\d1 Ohp^k ]hhkl - pbg]hpl1
|
Original
|
PDF
|
|
TMS320C54xx
Abstract: TMS320C54Xx interrupts interface mcbsp and codec tms320c54xx features TMS320C5410 data addressing modes of TMS320C54xx digital datasheet of TMS320C54XX SPRA957 of TMS320C54XX TMS320C54xx manual
Text: Application Report SPRA957 − September 2003 TMS320C54xx McBSP to TLV320AIC24 Interface Hong-Swee Lim Semiconductor Group ABSTRACT This application note describes a method for interfacing the TMS320C5400 multichannel buffer serial ports McBSP to the TLV320AIC24.
|
Original
|
PDF
|
SPRA957
TMS320C54xx
TLV320AIC24
TMS320C5400
TLV320AIC24.
C5000,
C6000)
TMS320C54Xx interrupts
interface mcbsp and codec
tms320c54xx features
TMS320C5410
data addressing modes of TMS320C54xx digital
datasheet of TMS320C54XX
of TMS320C54XX
TMS320C54xx manual
|
U638
Abstract: RRQ1
Text: 31;*| ;854/ ;<,<0 :05,@ 1DAOPMDN y Da]d][lja[ klj]f_l` 7:55U y KED klYlmk af\a[Ylgj y O`glg akgdYlagf y BahgdYj ljYfkaklgj gmlhml y Ojafl]\ [aj[mal ZgYj\ egmfl y Efnajgfe]flYd ^ja]f\dq hjg\m[l .QgHR [gehdaYfl/ 479=< .SY @ 7: /0;.:49<487 / Cgfljgd ngdlY_] jYf_]
|
Original
|
PDF
|
6939UDC
HFR95-k
37UDC
U167U
37UDC
U638
RRQ1
|
|
|
omnix om-310
Abstract: G2M5477 telemetry block diagram LFM-70W RN-131G RN-131-DS almit RN-131C U3O-G2M5477 OM-310
Text: RN-131G & RN-131C www.rovingnetworks.com RN-131-DS v2.5 12/23/2009 WiFly GSX 802.11 b/g Wireless LAN Module Features • Qualified 2.4GHz IEEE 802.11b/g transceiver • High throughput, 1Mbps sustained data rate with TCP/IP and WPA2 • Ultra-low power - 4uA sleep, 40mA Rx,
|
Original
|
PDF
|
RN-131G
RN-131C
RN-131-DS
11b/g
210mA
omnix om-310
G2M5477
telemetry block diagram
LFM-70W
RN-131G
almit
RN-131C
U3O-G2M5477
OM-310
|
MDT2010E
Abstract: mdt2005e 313u MDT*2010E 129u 614k 792mA 468m 106U 113u
Text: Date : 8-06-‘09 MDT2005E & MDT2010E JE 使用注意事项 由于 MDT2005E & MDT2010E(JE) 与 IB 版制程不同注意下列事项 : I. Power edge detector (PED)的功能，(@VDD=5V ,PED=ENABLE)激活电位约在 1.9V~2.3V 左右 II. 使用 RC 振荡时，需调整 RC 值 .
|
Original
|
PDF
|
MDT2005E
MDT2010E
MDT2010E
mdt2005e
313u
MDT*2010E
129u
614k
792mA
468m
106U
113u
|
G2M5477
Abstract: omnix om-310 U30-G2M5477 RN-131G LFM-70W RN-131C adc 809 block diagram pin configuration RN-131-DS wifi RECEIVER CIRCUIT DIAGRAM almit lfm-70w
Text: RN-131G & RN-131C www.rovingnetworks.com RN-131-DS v2.6 10/5/2011 WiFly GSX 802.11 b/g Wireless LAN Module Features • Qualified 2.4GHz IEEE 802.11b/g transceiver High throughput, 1Mbps sustained data rate with TCP/IP and WPA2 Ultra-low power - 4uA sleep, 40mA Rx,
|
Original
|
PDF
|
RN-131G
RN-131C
RN-131-DS
11b/g
210mA
G2M5477
omnix om-310
U30-G2M5477
RN-131G
LFM-70W
RN-131C
adc 809 block diagram pin configuration
wifi RECEIVER CIRCUIT DIAGRAM
almit lfm-70w
|
DFE252012R-H-2R2N
Abstract: EN07
Text: Datasheet Power Management LSI for Mobile Phone BD71801GWL General Description The BD71801GWL is an integrated Power Management LSI available in a small 80-pins 0.4mm-pitch 3.8mm-by3.8mm Wafer-level CSP package, which is designed to meet demands for space-constrained Smart phones.
|
Original
|
PDF
|
BD71801GWL
BD71801GWL
80-pins
UCSP50L3C
DFE252012R-H-2R2N
EN07
|
Untitled
Abstract: No abstract text available
Text: 5379 .@?;9;?6A2 =28.C 3HERSPHQ Y Roal[`af_ [YhYZadalq mh lg 75A Y Rap \a^^]j]fl [gflY[l YjjYf_]e]flk Y Tf]f[dgk]\ Yf\ hdYkla[ k]Yd]\ lqh]k YnYadYZd] Y QgHR - EKU [gehdaYfl ?UOJFEK .OOKJFERJNMQ C]fljYd \ggj dg[c1 Ogo]j \ggjk - oaf\gok1 Ka_`laf_1 ^dYk`da_`l - af\a[Ylgj dYeh [gfljgd1 Ifkljme]fl [gfljgd1
|
Original
|
PDF
|
Sqh395eU17
5eU17
7v95A
7v85A47v
75A465A
7v75A
|
Untitled
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR 58E ]> fÜHARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM450 D, R, H • M3GES71 D04S741 737 H H A S 2N7297D, 2N7297R 2N7297H December 1992 Radiation Hardened N-Channel Power MOSFETs Features • 10A, 500V, RDS(on) > 0.600Q
|
OCR Scan
|
PDF
|
FRM450
M3GES71
D04S741
2N7297D,
2N7297R
2N7297H
100KRAD
300KRAD
1000KRAD
3000KRAD
|
1291H
Abstract: ILM12
Text: H A RR IS S E M I C O N D SE CT OR S6E D HARRIS • 4 3 0 2 27 1 0 0 4 5 7 5 3 lbfl « H A S ¿IV SHififU, 2N 7298R 2N7298H u -, S E M IC O N D U C T O R REGISTRATION PENDING Currently Available as FRF450 D, R, H December 1992 R adiation Hardened N -C hannel Pow er M OSFETs
|
OCR Scan
|
PDF
|
7298R
FRF450
100KRAD
300KRAD
1000KRAD
3000KRAD
30-0nA
AN-8831,
QG4575fc,
2N7298D,
1291H
ILM12
|
Untitled
Abstract: No abstract text available
Text: h a r r is ^ S E M I C O N D U C T O R FRM450D, FRM450R, FRM45ÛH 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 10A, 500V, RDS on = 0.6000 TO-204AA • Second Generation Rad Hard MOSFET Result» From New Design Concepts
|
OCR Scan
|
PDF
|
FRM450D,
FRM450R,
FRM45
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
FRM450H
|
2N7298D
Abstract: No abstract text available
Text: Œk H U U a r r is S E M I C O N D U C T O R 2N7298D, 2N7298R 2N72QQH REGISTRATION PENDING Currently Available as FRF450 D, R, H . Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 9A, 500V, RDS(on) >0.6150 TO-254AA • Second Generation Rad Hard MOSFET Retults From New Design Concept*
|
OCR Scan
|
PDF
|
2N7298D,
2N7298R
2N72QQH
FRF450
O-254AA
100KRAD
300KRAD
1000KRAD
3000KRAD
/mg/cm01
2N7298D
|
Untitled
Abstract: No abstract text available
Text: flJ h a r fr is U U S E M I C O N D U C T O R FRF450D, FRF450R, FRF450H 9A, 500V, 0.615 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 9A.500V, RDS on = 0.61511 TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts
|
OCR Scan
|
PDF
|
FRF450D,
FRF450R,
FRF450H
O-254AA
100KRAD
300KRAD
1000KRAD
3000KRAD
MIL-S-19500
AN-8831,
|
