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    6514 TRANSISTOR Search Results

    6514 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    6514 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MS2N3821

    Abstract: No abstract text available
    Text: NJF6514 and NJF6515 N-Channel, J-FET Depletion Mode Transistor Screened in reference to MIL-PRF-19500 DESCRIPTION The NJF6514 and NJF6515 are ideal for functioning as very high frequency VHF small signal amplifiers. The NJF6514 part number is similar to the MX2N3821. The NJF6515 part number


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    NJF6514 NJF6515 MIL-PRF-19500 NJF6515 MX2N3821. MS2N3821. MS2N3821 PDF

    Untitled

    Abstract: No abstract text available
    Text: NJF6514 and NJF6515 N-Channel, J-FET Depletion Mode Transistor Screened in reference to MIL-PRF-19500 DESCRIPTION The NJF6514 and NJF6515 are ideal for functioning as very high frequency VHF small signal amplifiers. The NJF6514 part number is similar to the MV2N3821. The NJF6515 part number


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    NJF6514 NJF6515 MIL-PRF-19500 NJF6515 MV2N3821. MS2N3821. PDF

    Keithley

    Abstract: Picoammeters transistor 2611b Keithley s900 5 DIGIT SINGLE CHIP DIGITAL MULTIMETER NONLINEAR MODEL LDMOS keithley 192 Multimeter service manual 1016w AL 2425 dv battery charger schematic diagram apc back-UPS es 550
    Text: 99 Washington Street Melrose, MA 02176 Phone 781-665-1400 Toll Free 1-800-517-8431 www.keithley.com Visit us at www.TestEquipmentDepot.com research n nanotechnology n semiconductor n wireless n electronic components research n nanotechnology n semiconductor


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    NJD6513

    Abstract: NJD6514 6512 6513 6514 TRANSISTOR darlington array mp 6514 5-30V NJD6511 NJD6512
    Text: NPN TRA NS IST O R ARRAY NJM6511, 6512, 6513, 6514 The seven high breakdown voltage NPN Darlington-connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers. Their internal suppression diodes insure freedom from problems associated with inductive


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    NJM65Ã 500mA NJD6511 NJD6512 NJD6513 NJD6514 300mA 200mA 250mA 6512 6513 6514 TRANSISTOR darlington array mp 6514 5-30V PDF

    mps6514

    Abstract: No abstract text available
    Text: b^E ]> • bb53T31 Q Q S T T n A2T MPS6513 MPS6514 MPS6515 APX N AUER PHILIPS/DISCRETE V. AMPLIFIER TRANSISTOR General purpose n-p-n transistors in TO-92 envelopes. The complementary types are MPS6517 to MPS6519. QUICK REFERENCE DATA MPS6513 6514 6515 VCEO


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    bb53T31 MPS6513 MPS6514 MPS6515 MPS6517 MPS6519. NECC-C-002 mps6514 PDF

    2114 Ram pinout 18

    Abstract: No abstract text available
    Text: MWS5114 H A R R IS S E M I C O N D U C T O R 1024-Word x 4-Bit LSI Static RAM February 1992 Description Features • Fully Static Operation • Industry Standard 1024 x 4 Pinout Same as Pinouts for 6514, 2114, 9114, and 404S Types • Common Data Input and Output


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    MWS5114 1024-Word MWS5114 MWS5114-3 MWS5114-2 MWS5114-1 2114 Ram pinout 18 PDF

    Untitled

    Abstract: No abstract text available
    Text: Random-Access Memories RAMs MWS5114 a6 — I I8 “ VDD A5 — 2 I7 — A? * 4 - 3 I6 a 3 — 4 I - «8 I5 - A g CMOS 1024-Word by 4-Bit LSI Static RAM Ao — 5 I4 — I/O t Features: A| — 6 I3 — 1 / 0 2 7 I2 - I / O 3 • Fully static operation ■ In d u s try s ta n d a rd 1024 x 4 p in o u t (sam e as p in o u ts fo r 6514, 2114,


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    MWS5114 1024-Word 30982R 92CS-3III4R2 PDF

    NJD6513

    Abstract: NJD6512 NJD6514 NJ*6513 transistor 6512 5-30V DDG471S NJD6511 NJM6511 6513 TRANSISTOR
    Text: NPN TR A N S IS T O R ARRAY NJM6511,6512,6513,6514 T he seven high breakdow n voltage N PN D arlington-connected transistors in these arrays are well suited for driving lam ps, relays, o r printer ham m ers. T heir internal suppression diodes insure freedom from problem s associated with inductive


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    NJM6511 500mA NJD6511 NJD6512 NJD6513 NJD6514 350mA 350mA 500/nA NJ*6513 transistor 6512 5-30V DDG471S 6513 TRANSISTOR PDF

    MPS6513

    Abstract: LG IC 621 MPS65 MPS6514 MPS6515 MPS6517 MPS6519 6515 transistor 5bti T2721
    Text: MPS6513 MPS6514 MPS65Ì5_ PHILIPS 7 1 1 0 ô 2 t 0 0 4 2 4 ^ 0 323 « P H I N INTERNATIONAL AMPLIFIER TRANSISTOR T - 2 7 - Z / General purpose n-p-n transistors in TO-92 envelopes. The complementary types are MPS6517 to MPS6519. QUICK REFERENCE DA TA MPS6513


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    MPS6513 MPS6514 MPS65Ã 711002t T-27-Z/ MPS6517 MPS6519. NECC-C-002 LG IC 621 MPS65 MPS6515 MPS6519 6515 transistor 5bti T2721 PDF

    NJD6511

    Abstract: No abstract text available
    Text: NPN T R A N S IS T O R ARRAY NJD6511,6512,6513,6514 T he seven high breakdow n voltage NPN D arlington-connected transistors in these arrays are well suited for driving lam ps, relays, or printer ham m ers. Their internal suppression diodes insure freedom from problem s associated with inductive


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    NJD6511 NJD6512 NJD6513 NJD6514 500/xA 125mA PDF

    mps6513 TRANSISTOR

    Abstract: 6514 TRANSISTOR MPS6513 MPS6514 MPS6515 MPS6517 MPS6519 6514 mi 6514
    Text: b'îE ]> • bbSB'ìai QQST'ìTì ÔET MPS6513 MPS6514 MPS6515 IAPX N AUER PHILIPS/DISCRETE AMPLIFIER TRANSISTOR General purpose n-p-n transistors in TO -92 envelopes. T he co m p le m e nta ry types are M PS6517 to MPS6519. Q U IC K R E F E R E N C E D A T A


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    MPS6513 MPS6514 MPS6515 MPS6517 MPS6519. 100mA NECC-C-002 mps6513 TRANSISTOR 6514 TRANSISTOR MPS6515 MPS6519 6514 mi 6514 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS AKTIENGESELLSCHAF LOE ]> • 023SbOS G D S m ? S M7D I1SIE6 SIEMENS Transistoren Transistors AIGaAs/GaAs HEMTs AIGaAs/GaAs HEMTs Characteristics TA = 25° C Maximum Ratings E mW 9m mS 70 180 40 ¿> P o Type 70 180 40 -3.0.0 60 180 50 70 200 40


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    023SbOS CGY50 OT-143 CGY40 CLY10 CGY52 PDF

    2N6510

    Abstract: 2N6513 2n6512 2N6511 2NG510 2N6514
    Text: 2N6510 2N6511 2N6512 2N6513 2N6514 POWER TRANSISTORS 7 Amp, 400V, Triple Diffused NPN Mesa FEATURES • Collector-Base Voltage: up to 400V • Peak C ollector Current: 10A • Rise Time: < 1.5/js > • Fall Time: < 1.5ms \ lc = 4A DESCRIPTION These high voltage trip le diffused glass


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    2N6510 2N6511 2N6512 2N6513 2N6514 2NG510 2N6514 PDF

    information applikation

    Abstract: U880D information applikation mikroelektronik Halbleiterbauelemente DDR "Mikroelektronik" Heft u880 mikroelektronik applikation VEB mikroelektronik mikroelektronik information applikation mikroelektronik DDR
    Text: i« ¡ 2 Information Applikation t m f f i ^ o e l e k t s n o •/ Information Applikation n • Heft 30: HALBLEITERSPEICHER Teil 2 SRAM und DRAM v e b halbleiterw erk frankfurfc/odor KBD im veb Kombinat mikroelektronik KAMMER DER TECHNIK Bezirksverbond


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    2N6179

    Abstract: POWER TRANSISTORS 10A 400v pnp BU106 2N3055 RCA 2N2102 BUX17 BUX18 RCA 2N3055 transistor transistor BDX 65 2N5240
    Text: HIGH-VOLTAGE N-P-N & P-N-P POWER T Y PE S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .


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    lc-30A 130x130 180x180 210x210 BU106 2N5840 2N5240 2N6510 2N6308 2N5805 2N6179 POWER TRANSISTORS 10A 400v pnp BU106 2N3055 RCA 2N2102 BUX17 BUX18 RCA 2N3055 transistor transistor BDX 65 2N5240 PDF

    2sc 9015

    Abstract: 2SC644 CS9015 2N4248 scr 4059 transistor MPS 6518 mpsa09 2SC923 2N3550 2SC644 transistor
    Text: 7 -. SEMICONDUCTORS INC OIE I | SlBktSO 0000275 1 | ¿Lf-/? TYPE NO. ; POLARITY 1 Audio Frequency Small Signal Transistors MAXIMUM RATINGS CASE HFE Pd mW) >C (mA) VCEO (V) min max •c (mA) VCE (V) VCE(SAT) max ■c (V) (mA) fT min (MHz) Cob max (pF) 5+


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    BCW86 O-92F BCY56 BCY57 BCY58 BCY59 2sc 9015 2SC644 CS9015 2N4248 scr 4059 transistor MPS 6518 mpsa09 2SC923 2N3550 2SC644 transistor PDF

    RCA transistor 40410

    Abstract: RCA transistor 40319 RCA transistor 40406 RCA 40872 rca 40636 rca 40634 rca 40872 transistor rca 2N3771 power circuit RCA 40595 transistor rca 40410
    Text: H IG H -V O LT A G E N-P-N & P-N-P POW ER T Y P E S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 75 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V


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    lc-30A 130x130 180x180 210x210 bu106 2n5840 2n5240 2N6510 2N6308 2n5805 RCA transistor 40410 RCA transistor 40319 RCA transistor 40406 RCA 40872 rca 40636 rca 40634 rca 40872 transistor rca 2N3771 power circuit RCA 40595 transistor rca 40410 PDF

    2sc 9015

    Abstract: 2SC644 CS9015 9014n BC 945 transistor BC 945 2N4248 BC267 2SC828 2sc828a
    Text: BC BC BC BC BC 132 153 154 167 168 107 108 109 113 114 Z Z Z Z Z Z Z -0 -0 z Z Z Z Z Z TO-106 TO-92F TO-92B TO-92F TO-92B 901-01 90101 901-01 901-01 901-01 TO-92F TO-92B TO-92F TO-92B TO-18 TO-18 TO-18 TO-18 TO-92F TO-92B 3 3 3 3 â <b <b <b cb b M IO M tO K


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    BC107 O-106 O-92B -26UNF-2A O-48D 2sc 9015 2SC644 CS9015 9014n BC 945 transistor BC 945 2N4248 BC267 2SC828 2sc828a PDF

    117L7

    Abstract: 2e22 6JV6 6BM8 12EC8 6au5gt 6HF5 6GH8A 6HB5 12U7
    Text: TUNS-SOL TECHNICAL DATA TUNG-SOL ELECTRON TUBES TUNG-SOL ELECTRIC INC. ELEC TR O N T U B E DIVISIO N NEW ARK, N. }. U. S. A. PL ATE 275r OCT. 1 1951 C O P Y R IG H T 1 9 0 1 BY T U N O - S O L E L EC TR IC IN C . E L E C T R O N IC T U B E D IV ISIO N N E W A R K . N E W J E R S E Y . U . S. A.


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    19JN8 19JN8 117L7 2e22 6JV6 6BM8 12EC8 6au5gt 6HF5 6GH8A 6HB5 12U7 PDF

    Halbleiterbauelemente DDR

    Abstract: transistor vergleichsliste u82720 Datenblattsammlung VEB mikroelektronik aktive elektronische bauelemente ddr mikroelektronik datenblattsammlung je 3055 Motorola mikroelektronik DDR Transistor Vergleichsliste DDR
    Text: íx}i3í iu ]9n;g'q s p o s i l i o j p j S j © DNmiAf W¥S±±na N31¥Q >l!UDüq>|! ZUR B E A C H T U N G Die vorliegenden Datenblätter beinhalten ausführliche technische Angaben von aktiven elektronischen Bauelementen des in den "Listen Elektronischer Bauelemente und Bausteine" LEB)


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    R-1035 Halbleiterbauelemente DDR transistor vergleichsliste u82720 Datenblattsammlung VEB mikroelektronik aktive elektronische bauelemente ddr mikroelektronik datenblattsammlung je 3055 Motorola mikroelektronik DDR Transistor Vergleichsliste DDR PDF

    ZN 3055 transistor

    Abstract: Transistor w1l 7805 TO-220 V7233 5241E V7331 V5237B V-5240-k mk 5373 V7622
    Text: ASSMANN Technical Data & Abbreviations Electronic C om ponen ts Al Surface nature AI203 Aluminiumoxyd Al Mg Si 0,5 Special aluminium alloy {extruded Al 99,5 Special aluminium alloy band) GD-AI Si 12 Special aluminium alloy (Die-cast) BeO Berylliumoxyd K


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    AI203 OT-32, O-126) O-220 O-220, ZN 3055 transistor Transistor w1l 7805 TO-220 V7233 5241E V7331 V5237B V-5240-k mk 5373 V7622 PDF

    ITE 8987

    Abstract: Z436 transistor tic 913 4-701 76141 EE 19 Switching Transformer ML/82x33/587/OS/ITE 8987
    Text: 80C26 CMOS Ethernet Interface Adapter in 28L Package T e c h n o lo g y , in c o rp o ra t» d PRELIMINARY October 1994 SEEQ AutoDUPLEX Designation Sym bol ¡ identifies product as AutoD UPLEX devioe. • Provides AutoDUPLEXT" Detect Function for Full Duplex LAN Controllers, Doubling Bandwidth


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    80C26 10Base-T ITE 8987 Z436 transistor tic 913 4-701 76141 EE 19 Switching Transformer ML/82x33/587/OS/ITE 8987 PDF

    2n3773 power Amplifier circuit diagrams

    Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
    Text: RCA Power Devices This DATABOOK contains com­ plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete


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    AN-6671 G4000) G4000 2n3773 power Amplifier circuit diagrams SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U PDF

    smd npn 2n2222

    Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200
    Text: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.


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    2PC1815L 2PC1815 10xx0. 7Z88986 smd npn 2n2222 bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200 PDF