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Text: INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT50G102 STROBE FLASH APPLICATIONS Unit in mm 15.9MAX, 0 3.2±0.2 . High Input Impedance . High Speed :tf=1.3ns Typ. . Low Saturation Voltage: V c e (sat)=4•OV(Max.)(Ic=50A) . Enhancement-Mode . Recommended C^=650yF